JP2024114792A5 - - Google Patents
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- JP2024114792A5 JP2024114792A5 JP2024102191A JP2024102191A JP2024114792A5 JP 2024114792 A5 JP2024114792 A5 JP 2024114792A5 JP 2024102191 A JP2024102191 A JP 2024102191A JP 2024102191 A JP2024102191 A JP 2024102191A JP 2024114792 A5 JP2024114792 A5 JP 2024114792A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- region
- conductive film
- region located
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008197145 | 2008-07-31 | ||
| JP2008197145 | 2008-07-31 | ||
| JP2020114104A JP7066783B2 (ja) | 2008-07-31 | 2020-07-01 | 半導体装置 |
| JP2022073457A JP2022106865A (ja) | 2008-07-31 | 2022-04-27 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022073457A Division JP2022106865A (ja) | 2008-07-31 | 2022-04-27 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024114792A JP2024114792A (ja) | 2024-08-23 |
| JP2024114792A5 true JP2024114792A5 (enExample) | 2024-10-04 |
| JP7766748B2 JP7766748B2 (ja) | 2025-11-10 |
Family
ID=41607404
Family Applications (11)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009176495A Active JP5268818B2 (ja) | 2008-07-31 | 2009-07-29 | 半導体装置 |
| JP2011019459A Active JP5480174B2 (ja) | 2008-07-31 | 2011-02-01 | 半導体装置 |
| JP2012003959A Active JP5409819B2 (ja) | 2008-07-31 | 2012-01-12 | 半導体装置の作製方法 |
| JP2012003824A Active JP5409818B2 (ja) | 2008-07-31 | 2012-01-12 | 半導体装置 |
| JP2014025020A Active JP5789685B2 (ja) | 2008-07-31 | 2014-02-13 | 半導体装置 |
| JP2015153094A Active JP6023857B2 (ja) | 2008-07-31 | 2015-08-03 | 半導体装置 |
| JP2016198643A Active JP6417378B2 (ja) | 2008-07-31 | 2016-10-07 | 半導体装置 |
| JP2018189901A Withdrawn JP2019033274A (ja) | 2008-07-31 | 2018-10-05 | 半導体装置 |
| JP2020114104A Active JP7066783B2 (ja) | 2008-07-31 | 2020-07-01 | 半導体装置 |
| JP2022073457A Withdrawn JP2022106865A (ja) | 2008-07-31 | 2022-04-27 | 半導体装置 |
| JP2024102191A Active JP7766748B2 (ja) | 2008-07-31 | 2024-06-25 | 半導体装置 |
Family Applications Before (10)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009176495A Active JP5268818B2 (ja) | 2008-07-31 | 2009-07-29 | 半導体装置 |
| JP2011019459A Active JP5480174B2 (ja) | 2008-07-31 | 2011-02-01 | 半導体装置 |
| JP2012003959A Active JP5409819B2 (ja) | 2008-07-31 | 2012-01-12 | 半導体装置の作製方法 |
| JP2012003824A Active JP5409818B2 (ja) | 2008-07-31 | 2012-01-12 | 半導体装置 |
| JP2014025020A Active JP5789685B2 (ja) | 2008-07-31 | 2014-02-13 | 半導体装置 |
| JP2015153094A Active JP6023857B2 (ja) | 2008-07-31 | 2015-08-03 | 半導体装置 |
| JP2016198643A Active JP6417378B2 (ja) | 2008-07-31 | 2016-10-07 | 半導体装置 |
| JP2018189901A Withdrawn JP2019033274A (ja) | 2008-07-31 | 2018-10-05 | 半導体装置 |
| JP2020114104A Active JP7066783B2 (ja) | 2008-07-31 | 2020-07-01 | 半導体装置 |
| JP2022073457A Withdrawn JP2022106865A (ja) | 2008-07-31 | 2022-04-27 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (8) | US8129717B2 (enExample) |
| JP (11) | JP5268818B2 (enExample) |
| KR (14) | KR101617239B1 (enExample) |
| CN (6) | CN102544109B (enExample) |
| TW (11) | TWI469354B (enExample) |
Families Citing this family (320)
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| TWI622175B (zh) | 2008-07-31 | 2018-04-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JP5616038B2 (ja) * | 2008-07-31 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI500159B (zh) | 2008-07-31 | 2015-09-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
| TWI469354B (zh) | 2008-07-31 | 2015-01-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| JP5480554B2 (ja) | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5608347B2 (ja) * | 2008-08-08 | 2014-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| JP5525778B2 (ja) | 2008-08-08 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| JP5361651B2 (ja) | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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