JP5268818B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5268818B2
JP5268818B2 JP2009176495A JP2009176495A JP5268818B2 JP 5268818 B2 JP5268818 B2 JP 5268818B2 JP 2009176495 A JP2009176495 A JP 2009176495A JP 2009176495 A JP2009176495 A JP 2009176495A JP 5268818 B2 JP5268818 B2 JP 5268818B2
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layer
thin film
film transistor
film
semiconductor
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Japanese (ja)
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JP2010056539A5 (ja
JP2010056539A (ja
Inventor
舜平 山崎
秀和 宮入
健吾 秋元
康次郎 白石
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2010056539A5 publication Critical patent/JP2010056539A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Shift Register Type Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009176495A 2008-07-31 2009-07-29 半導体装置 Active JP5268818B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009176495A JP5268818B2 (ja) 2008-07-31 2009-07-29 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008197145 2008-07-31
JP2008197145 2008-07-31
JP2009176495A JP5268818B2 (ja) 2008-07-31 2009-07-29 半導体装置

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2011019459A Division JP5480174B2 (ja) 2008-07-31 2011-02-01 半導体装置
JP2012003824A Division JP5409818B2 (ja) 2008-07-31 2012-01-12 半導体装置
JP2012003959A Division JP5409819B2 (ja) 2008-07-31 2012-01-12 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2010056539A JP2010056539A (ja) 2010-03-11
JP2010056539A5 JP2010056539A5 (ja) 2012-08-16
JP5268818B2 true JP5268818B2 (ja) 2013-08-21

Family

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Family Applications (11)

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JP2009176495A Active JP5268818B2 (ja) 2008-07-31 2009-07-29 半導体装置
JP2011019459A Active JP5480174B2 (ja) 2008-07-31 2011-02-01 半導体装置
JP2012003824A Active JP5409818B2 (ja) 2008-07-31 2012-01-12 半導体装置
JP2012003959A Active JP5409819B2 (ja) 2008-07-31 2012-01-12 半導体装置の作製方法
JP2014025020A Active JP5789685B2 (ja) 2008-07-31 2014-02-13 半導体装置
JP2015153094A Active JP6023857B2 (ja) 2008-07-31 2015-08-03 半導体装置
JP2016198643A Active JP6417378B2 (ja) 2008-07-31 2016-10-07 半導体装置
JP2018189901A Withdrawn JP2019033274A (ja) 2008-07-31 2018-10-05 半導体装置
JP2020114104A Active JP7066783B2 (ja) 2008-07-31 2020-07-01 半導体装置
JP2022073457A Withdrawn JP2022106865A (ja) 2008-07-31 2022-04-27 半導体装置
JP2024102191A Active JP7766748B2 (ja) 2008-07-31 2024-06-25 半導体装置

Family Applications After (10)

Application Number Title Priority Date Filing Date
JP2011019459A Active JP5480174B2 (ja) 2008-07-31 2011-02-01 半導体装置
JP2012003824A Active JP5409818B2 (ja) 2008-07-31 2012-01-12 半導体装置
JP2012003959A Active JP5409819B2 (ja) 2008-07-31 2012-01-12 半導体装置の作製方法
JP2014025020A Active JP5789685B2 (ja) 2008-07-31 2014-02-13 半導体装置
JP2015153094A Active JP6023857B2 (ja) 2008-07-31 2015-08-03 半導体装置
JP2016198643A Active JP6417378B2 (ja) 2008-07-31 2016-10-07 半導体装置
JP2018189901A Withdrawn JP2019033274A (ja) 2008-07-31 2018-10-05 半導体装置
JP2020114104A Active JP7066783B2 (ja) 2008-07-31 2020-07-01 半導体装置
JP2022073457A Withdrawn JP2022106865A (ja) 2008-07-31 2022-04-27 半導体装置
JP2024102191A Active JP7766748B2 (ja) 2008-07-31 2024-06-25 半導体装置

Country Status (5)

Country Link
US (8) US8129717B2 (enExample)
JP (11) JP5268818B2 (enExample)
KR (14) KR101617239B1 (enExample)
CN (6) CN102169906B (enExample)
TW (11) TWI469354B (enExample)

Families Citing this family (320)

* Cited by examiner, † Cited by third party
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TWI469354B (zh) 2008-07-31 2015-01-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP2010056541A (ja) 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
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JP5480554B2 (ja) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
JP5608347B2 (ja) * 2008-08-08 2014-10-15 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5525778B2 (ja) * 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 半導体装置
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