CN104934330A - 一种薄膜晶体管及其制备方法、阵列基板和显示面板 - Google Patents
一种薄膜晶体管及其制备方法、阵列基板和显示面板 Download PDFInfo
- Publication number
- CN104934330A CN104934330A CN201510232985.5A CN201510232985A CN104934330A CN 104934330 A CN104934330 A CN 104934330A CN 201510232985 A CN201510232985 A CN 201510232985A CN 104934330 A CN104934330 A CN 104934330A
- Authority
- CN
- China
- Prior art keywords
- film
- layer
- metal
- drain electrode
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 69
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 58
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 239000002245 particle Substances 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 158
- 239000002082 metal nanoparticle Substances 0.000 claims description 90
- 239000010409 thin film Substances 0.000 claims description 80
- 239000012212 insulator Substances 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- 239000011733 molybdenum Substances 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 239000002105 nanoparticle Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910003454 ytterbium oxide Inorganic materials 0.000 claims description 8
- 229940075624 ytterbium oxide Drugs 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 6
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000005118 spray pyrolysis Methods 0.000 claims description 4
- 229910002070 thin film alloy Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 3
- 208000034699 Vitreous floaters Diseases 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 30
- 238000005516 engineering process Methods 0.000 abstract description 17
- 238000009413 insulation Methods 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 224
- 238000010586 diagram Methods 0.000 description 24
- 238000000151 deposition Methods 0.000 description 20
- 230000008021 deposition Effects 0.000 description 15
- 230000009286 beneficial effect Effects 0.000 description 11
- 239000011241 protective layer Substances 0.000 description 9
- 239000011701 zinc Substances 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- VAJVDSVGBWFCLW-UHFFFAOYSA-N 3-Phenyl-1-propanol Chemical compound OCCCC1=CC=CC=C1 VAJVDSVGBWFCLW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 3
- DYUQAZSOFZSPHD-UHFFFAOYSA-N Phenylpropyl alcohol Natural products CCC(O)C1=CC=CC=C1 DYUQAZSOFZSPHD-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 102100035366 Centromere protein M Human genes 0.000 description 1
- 101000737696 Homo sapiens Centromere protein M Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical group [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/47—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/471—Inorganic layers
- H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
- H01L21/47635—After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1258—Spray pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
- C23C18/127—Preformed particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C20/00—Chemical coating by decomposition of either solid compounds or suspensions of the coating forming compounds, without leaving reaction products of surface material in the coating
- C23C20/02—Coating with metallic material
- C23C20/04—Coating with metallic material with metals
Abstract
本发明公开了一种薄膜晶体管及其制备方法、阵列基板和显示面板,以解决背沟道刻蚀工艺制备金属氧化物薄膜晶体管时,有源层容易被腐蚀的问题。方法包括:在衬底基板上形成栅极金属薄膜,通过构图工艺使栅极金属薄膜形成包括栅电极的栅极金属层;在栅极金属层上形成栅极绝缘层;在栅极绝缘层上形成有源层;在有源层上制备金属纳米粒子层用为刻蚀保护层;在完成上述工艺的衬底基板上形成源漏极金属薄膜,通过构图工艺使源漏极金属薄膜形成包括源电极和漏电极的源漏极金属层,源电极和漏电极覆盖部分金属纳米粒子层;利用氧等离子体去除或氧化金属纳米粒子层未被源电极和漏电极覆盖的部分;在源漏极金属层上形成钝化层。
Description
技术领域
本发明涉及半导体技术领域,尤其涉及一种薄膜晶体管及其制备方法、阵列基板和显示面板。
背景技术
平面显示器(F1at Pane1Disp1ay,FPD)己成为市场上的主流产品,平面显示器的种类也越来越多,如液晶显示器(Liquid Crysta1Disp1ay,LCD)、有机发光二极管(Organic Light Emitted Diode,OLED)显示器、等离子体显示面板(P1asma Disp1ay Pane1,PDP)及场发射显示器(Field Emission Display,FED)等。
而作为FPD产业核心技术的薄膜晶体管(Thin Film Transistor,TFT)背板技术,也在经历着深刻的变革。尤其是金属氧化物薄膜晶体管(Metal OxideThin Film Transistor,MOTFT),由于具有较高的迁移率(在5~50cm2/Vs左右)、制作工艺简单、成本较低,且具有优异的大面积均匀性等特点,因此MOTFT技术自诞生以来便备受业界瞩目。
目前MOTFT主要使用的结构有背沟道刻蚀结构和刻蚀阻挡层结构。背沟道刻蚀结构的MOTFT由于制作工艺较为简单,并且与传统非晶硅制作工艺相同,设备投资和生产成本都较低廉,被认为是MOTFT实现大规模量产和能够广泛使用的必然发展方向。是背沟道刻蚀结构的MOTFT在生成有源层之后,在有源层上沉积金属层,并且图形化作为源、漏电极。而刻蚀阻挡层结构是在有源层生成之后,先制作一层刻蚀阻挡层,再在之上沉积金属层并且图形化作为源、漏电极。但是在有源层上刻蚀源、漏电极时,无论是采用干法刻蚀还是湿法刻蚀都会出现有源层被腐蚀的问题,即MOTFT背沟道损伤。例如,采用干法刻蚀时,金属氧化物构成的有源层容易受到离子损伤,导致暴露的沟道表面有载流子陷阱生成以及氧空位浓度增加,使得器件稳定性较差;又例如,采用湿法刻蚀时,因为金属氧化物构成的有源层对大部分酸性刻蚀液都比较敏感,很容易在刻蚀过程中被腐蚀,从而也将极大地影响器件性能。
发明内容
本发明的目的是提供一种薄膜晶体管及其制备方法、阵列基板和显示面板,以解决现有技术中采用背沟道刻蚀工艺制备金属氧化物薄膜晶体管时,有源层容易被腐蚀的问题。
本发明的目的是通过以下技术方案实现的:
本发明实施例提供一种薄膜晶体管的制备方法,包括:
在衬底基板上形成栅极金属薄膜,通过构图工艺使所述栅极金属薄膜形成包括栅电极的栅极金属层;
在所述栅极金属层上形成栅极绝缘层;
在所述栅极绝缘层上形成金属氧化物薄膜,通过构图工艺使所述金属氧化物薄膜形成有源层的图案;
在所述有源层上制备金属纳米粒子层,所述金属纳米粒子层作为刻蚀保护层;
在完成上述工艺的所述衬底基板上形成源漏极金属薄膜,通过构图工艺使所述源漏极金属薄膜形成包括源电极和漏电极的源漏极金属层,所述源电极和所述漏电极覆盖部分所述金属纳米粒子层;
利用氧等离子体去除或氧化所述金属纳米粒子层未被所述源电极和所述漏电极覆盖的部分;
在所述源漏极金属层上形成钝化层。
本实施例中,以金属纳米粒子层作为有源层的保护层,可以在刻蚀源电极和漏电极时对有源层进行保护,避免有源层被腐蚀所造成的器件不良;同时金属纳米粒子层具有良好的导电性,具有较好的热稳定性,对金属氧化物薄膜晶体管的制备工艺要求较低,从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
优选的,以金纳米粒子、银纳米粒子、铂纳米粒子、铍纳米粒子、镍纳米粒子和钴纳米粒子中的至少一种材料制备所述金属纳米粒子层。本实施例中,以金纳米粒子、银纳米粒子、铂纳米粒子、铍纳米粒子、镍纳米粒子或钴纳米粒子等材料制备所述金属纳米粒子层,可以在后续刻蚀所述源电极和所述漏电极时对所述有源层进行保护,避免所述有源层被腐蚀所造成的器件不良。
优选的,在所述有源层上制备金属纳米粒子层,具体包括:
采用物理气相沉积、化学气相沉积、水热法、溶胶-凝胶法、喷雾热解法或热壁法在所述有源层上制备所述金属纳米粒子层。
优选的,以1~5纳米的厚度制备所述金属纳米粒子层。
优选的,以具有缓冲层的玻璃基板作为所述衬底基板。
优选的,以具有水氧阻隔层的柔性基板作为所述衬底基板,以聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二酯、聚酰亚胺或者金属箔作为所述柔性基板的材料。
优选的,以铝薄膜、铜薄膜、钼薄膜、钛薄膜、银薄膜、金薄膜、钽薄膜、钨薄膜、铬薄膜和铝合金薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备所述栅极金属薄膜,且以100~2000纳米的厚度制备所述栅极金属薄膜。
优选的,以单层的氧化硅薄膜、氮化硅薄膜、氧化铝薄膜、五氧化二钽薄膜或氧化镱薄膜制备所述栅极绝缘层,或者以至少两种以上单层的薄膜构成的复合薄膜制备所述栅极绝缘层,且以50~500纳米的厚度制备所述栅极绝缘层。
优选的,以含有In、Zn、Ga和Sn中的至少一种的金属氧化物制备所述有源层,且以10~200纳米的厚度制备所述有源层。
优选的,以铝薄膜、铜薄膜、钼薄膜和钛薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备所述源漏极金属薄膜,且以100~2000纳米的厚度制备所述源漏极金属薄膜。
优选的,钝化层可以为氧化硅、氮化硅、氧气化铝、氧化镱、聚酰亚胺、苯丙环丁烯或聚甲基丙烯酸甲酯中任意一种单层膜层或至少两种以上构成的复合膜层。优选的,钝化层的厚度为50~2000纳米。
本发明实施例有益效果如下:以金属纳米粒子层作为有源层的保护层,可以在刻蚀源电极和漏电极时对有源层进行保护,避免对有源层被腐蚀所造成的器件不良;同时金属纳米粒子层具有良好的导电性,具有较好的热稳定性,对金属氧化物薄膜晶体管的制备工艺要求较低,从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
本发明实施例提供一种薄膜晶体管,包括:
衬底基板;
形成于所述衬底基板上的栅极金属层,所述栅极金属层包括栅电极;
形成于所述栅极金属层之上的栅极绝缘层;
形成于所述栅极绝缘层之上的有源层;
形成于所述有源层之上的金属纳米粒子层,所述金属纳米粒子层作为刻蚀保护层;
形成于所述金属纳米粒子层之上的源漏极金属层,所述源漏极金属层包括源电极和漏电极;
形成于所述源漏极金属层之上的钝化层。
本发明实施例有益效果如下:以金属纳米粒子层作为有源层的保护层,可以在刻蚀源电极和漏电极时对有源层进行保护,避免对有源层被腐蚀所造成的器件不良;同时金属纳米粒子层具有良好的导电性,具有较好的热稳定性,对金属氧化物薄膜晶体管的制备工艺要求较低,从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
本发明实施例提供一种阵列基板,包括如上实施例提供的薄膜晶体管。
本发明实施例有益效果如下:该阵列基板中,金属氧化物薄膜晶体管以金属纳米粒子层作为有源层的保护层,可以在刻蚀源电极和漏电极时对有源层进行保护,避免对有源层被腐蚀所造成的器件不良;同时金属纳米粒子层具有良好的导电性,具有较好的热稳定性,对金属氧化物薄膜晶体管的制备工艺要求较低,从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
本发明实施例提供一种显示面板,包括如上实施例提供的阵列基板。
本发明实施例有益效果如下:该显示面板所应用的阵列基板中,金属氧化物薄膜晶体管以金属纳米粒子层作为有源层的保护层,可以在刻蚀源电极和漏电极时对有源层进行保护,避免对有源层被腐蚀所造成的器件不良;同时金属纳米粒子层具有良好的导电性,具有较好的热稳定性,对金属氧化物薄膜晶体管的制备工艺要求较低,从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
附图说明
图1为本发明实施例提供的金属氧化物薄膜晶体管的制备方法的流程图;
图2为本发明实施例中,制备完成栅电极的金属氧化物薄膜晶体管的结构示意图;
图3为本发明实施例中,制备完成栅极绝缘层的金属氧化物薄膜晶体管的结构示意图;
图4为本发明实施例中,制备完成有源层的金属氧化物薄膜晶体管的结构示意图;
图5为本发明实施例中,制备完成金属纳米粒子层的金属氧化物薄膜晶体管的结构示意图;
图6为本发明实施例中,制备完成源漏极金属薄膜的金属氧化物薄膜晶体管的结构示意图;
图7为本发明实施例中,制备完成源电极和漏电极的金属氧化物薄膜晶体管的结构示意图;
图8为本发明实施例中,去除未被源电极和漏电极覆盖的金属纳米粒子层的金属氧化物薄膜晶体管的结构示意图;
图9为本发明实施例中,制备完成钝化层的金属氧化物薄膜晶体管的结构示意图。
具体实施方式
下面结合说明书附图对本发明实施例的实现过程进行详细说明。需要注意的是,自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,仅用于解释本发明,而不能理解为对本发明的限制。
参见图1,本发明实施例提供一种薄膜晶体管的制备方法,包括:
101,在衬底基板上形成栅极金属薄膜,通过构图工艺使栅极金属薄膜形成包括栅电极的栅极金属层。
根据金属氧化物薄膜晶体管的具体应用的不同,可以以具有缓冲层的玻璃基板作为衬底基板,也可以以具有水氧阻隔层的柔性基板作为衬底基板,优选的,以聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二酯、聚酰亚胺或者金属箔作为柔性基板的材料。
优选的,以铝薄膜、铜薄膜、钼薄膜、钛薄膜、银薄膜、金薄膜、钽薄膜、钨薄膜、铬薄膜和铝合金薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备栅极金属薄膜,且以100~2000纳米的厚度制备栅极金属薄膜。
102,在栅极金属层上形成栅极绝缘层。
优选的,以单层的氧化硅薄膜、氮化硅薄膜、氧化铝薄膜、五氧化二钽薄膜或氧化镱薄膜制备栅极绝缘层,或者以至少两种以上单层的薄膜构成的复合薄膜制备栅极绝缘层,且以50~500纳米的厚度制备栅极绝缘层。
103,在栅极绝缘层上形成金属氧化物薄膜,通过构图工艺使金属氧化物薄膜形成有源层的图案。
优选的,以含有In、Zn、Ga和Sn中的至少一种的金属氧化物制备有源层,且以10~200纳米的厚度制备有源层。
104,在有源层上制备金属纳米粒子层,金属纳米粒子层作为刻蚀保护层。
具体的,可以采用物理气相沉积、化学气相沉积、水热法、溶胶-凝胶法、喷雾热解法或热壁法等工艺沉积金属纳米粒子层。
以金纳米粒子、银纳米粒子、铂纳米粒子、铍纳米粒子、镍纳米粒子和钴纳米粒子中的至少一种材料制备金属纳米粒子层。优选的,以1~5纳米的厚度制备金属纳米粒子层。当然,其于成本考虑,金属纳米粒子层也可以采用成本更低的铍纳米粒子、镍纳米粒子和钴纳米粒子中的一种或以上。
需要说明的是,在沉积金属纳米粒子层后,还可以包括对金属纳米粒子层进行退火处理的工艺。
本实施例中,金属纳米粒子层可以在刻蚀源电极和漏电极时对有源层进行保护,避免有源层被腐蚀所造成的器件不良。
105,在完成上述工艺的衬底基板上形成源漏极金属薄膜,通过构图工艺使源漏极金属薄膜形成包括源电极和漏电极的源漏极金属层,源电极和漏电极覆盖部分金属纳米粒子层。
优选的,以铝薄膜、铜薄膜、钼薄膜和钛薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备源漏极金属薄膜,且以100~2000纳米的厚度制备源漏极金属薄膜。
106,利用氧等离子体去除或氧化金属纳米粒子层未被源电极和漏电极覆盖的部分。
107,在源漏极金属层上形成钝化层。
优选的,以为氧化硅、氮化硅、氧气化铝、氧化镱、聚酰亚胺、苯丙环丁烯或聚甲基丙烯酸甲酯中任意一种单层膜层或至少两种以上构成的复合膜层制备钝化层,且以50~2000纳米的厚度制备钝化层。
需要说明的是,现有技术中也提供了采用有机导电薄膜在金属氧化物薄膜晶体管的背沟道刻蚀工艺中对有源层进行保护的方法,但是有机导电薄膜中的硅或碳的导电性相对较差,可能会造成有源层和源、漏电极的接触不良,使得金属氧化物薄膜晶体管不稳定;同时,有机导电薄膜的热稳定性差,会在后续的工序中分解造成金属氧化物薄膜晶体管不稳定或不良,且分解的有机导电薄膜会污染制备设备。金属纳米粒子层较有机导电薄膜具有更好的热稳定性,能够有效保护有源层,并使制备而成的金属氧化物薄膜晶体管更稳定,也不会污染制备设备。
本发明实施例有益效果如下:以金属纳米粒子层作为有源层的保护层,可以在刻蚀源电极和漏电极时对有源层进行保护,避免对有源层被腐蚀所造成的器件不良;同时金属纳米粒子层具有良好的导电性,有利于与源电极和漏电极实现良好的导电接触,金属纳米粒子层较有机导电薄膜具有更好的热稳定性,对金属氧化物薄膜晶体管的制备工艺要求较低,从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
为了更详细的对本发明提供的金属氧化物薄膜晶体管的制备方法进行说明,结合附图2至附图9举例如下:
实施例一
本发明实施例提供第一种具体的金属氧化物薄膜晶体管的制备方法,包括:
步骤一,在衬底基板1上使用物理气相沉积法沉积钼/铝/钼三层金属薄膜作为栅极金属薄膜,钼/铝/钼三层金属薄膜的厚度分别为25//100/25纳米,通过构图工艺使栅极金属薄膜形成栅电极2。衬底基板1为带有200纳米厚度的SiO2缓冲层的无碱玻璃基板。在衬底基板1上制备栅电极2后的示意图如图2所示。
步骤二,在完成上述步骤的衬底基板1上采用等离子体增强型化学气相沉积法沉积栅极绝缘层3。制备完成栅极绝缘层3后的示意图如图3所示。
栅极绝缘层3由300纳米的SiNx和30纳米的SiO2叠层而成。
步骤三,利用物理气相沉积法在栅极绝缘层3上沉积金属氧化物薄膜,通过构图工艺使金属氧化物薄膜形成有源层4的图案。金属氧化物薄膜为氧化铟锌IZO薄膜,其中铟和锌的原子比为1:1。制备完成有源层4的示意图如图4所示。
步骤四,在有源层4上采用物理气相沉积法沉积5纳米厚的金纳米粒子用为金属纳米粒子层5。制备完成金属纳米粒子层5的示意图如图5所示。
金属纳米粒子层5可以在后续刻蚀源电极7和漏电极8(如图7所示)时对有源层4进行保护,避免有源层4被腐蚀造成的金属氧化物薄膜晶体管不良。
需要说明的是,在步骤四中,还可以包括对金属纳米粒子层5进行退火的工艺。
步骤五,在完成上述工艺的衬底基板1上,采用物理气相沉积法沉积钼/铝/钼叠层作为源漏极金属薄膜6,厚度分别为25//100/25纳米。制备完成源漏极金属薄膜6的示意图如图6所示。
使用30%的H2O2和1%的KOH的混合溶液作为湿法刻蚀液对源漏极金属薄膜6进行刻蚀,形成源电极7和漏电极8,源电极7和漏电极8覆盖部分金属纳米粒子层5。制备完成源电极7和漏电极8的示意图如图7所示。
步骤六,利用氧等离子体去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分。去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分的示意图如图8所示。
步骤七,采用等离子体增强型化学气相沉积法在完成上述工艺的衬底基板1上沉积300纳米的SiO2作为钝化层9,即在包括源电极7和漏电极8的源漏极金属层上形成钝化层9。制备完成钝化层9的示意图如图9所示。
实践发现,采用金属纳米粒子层5在背沟道刻蚀工艺中对有源层4进行保护,较有机导电薄膜进行保护更稳定,而且金属纳米粒子层5导电性好、表面粗糙,非常有利于实现有源层4和源电极7、漏电极8之间的良好接触。
实施例二
本发明实施例提供第二种具体的金属氧化物薄膜晶体管的制备方法,包括:
步骤一,在衬底基板1,使用物理气相沉积法沉积铜金属薄膜作为栅极金属薄膜,铜金属薄膜的厚度分别为500纳米,通过构图工艺使栅极金属薄膜形成栅电极2。衬底基板1为带有50纳米厚度的Al2O3水氧阻隔层的柔性基板。在衬底基板1上制备栅电极2后的示意图如图2所示。
步骤二,在完成上述步骤的衬底基板1上采用等离子体增强型化学气相沉积法沉积栅极绝缘层3。制备完成栅极绝缘层3后的示意图如图3所示。
栅极绝缘层3由200纳米的氧化铝和100纳米的氧化镱叠层而成。
步骤三,利用物理气相沉积法在栅极绝缘层3上沉积金属氧化物薄膜,通过构图工艺使金属氧化物薄膜形成有源层4的图案。金属氧化物薄膜为80纳米的氧化铟镓锌IGZO薄膜,其中铟、镓、锌的原子比为1:1:1。制备完成有源层4的示意图如图4所示。
步骤四,在有源层4上采用喷雾热解法制备2纳米厚的镍纳米粒子用为金属纳米粒子层5。制备完成金属纳米粒子层5的示意图如图5所示。
金属纳米粒子层5可以在后续刻蚀源电极7和漏电极8(如图6所示)时对有源层4进行保护,避免有源层4被腐蚀造成的金属氧化物薄膜晶体管不良。
需要说明的是,在步骤四中,还可以包括对金属纳米粒子层5进行退火的工艺。
步骤五,在完成上述工艺的衬底基板1上,采用物理气相沉积法沉积铜金属薄膜作为源漏极金属薄膜6,厚度分别为500纳米。制备完成源漏极金属薄膜6的示意图如图6所示。
使用H2O2和H2SO4的混合溶液作为湿法刻蚀液,对源漏极金属薄膜6进行刻蚀,形成源电极7和漏电极8,源电极7和漏电极8覆盖部分金属纳米粒子层5。制备完成源电极7和漏电极8的示意图如图7所示。
步骤六,利用氧等离子体去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分。去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分的示意图如图8所示。
步骤七,采用等离子体增强型化学气相沉积法在完成上述工艺的衬底基板1上沉积800纳米的聚酰亚胺作为钝化层9,即在包括源电极7和漏电极8的源漏极金属层上形成钝化层9。制备完成钝化层9的示意图如图9所示。
实践发现,采用金属纳米粒子层5在背沟道刻蚀工艺中对有源层4进行保护,较有机导电薄膜进行保护更稳定,而且金属纳米粒子层导电性好、表面粗糙,非常有利于实现有源层4和源电极7、漏电极8之间的良好接触。
实施例三
本发明实施例提供第三种具体的金属氧化物薄膜晶体管的制备方法,包括:
步骤一,在衬底基板1,使用物理气相沉积法沉积ITO薄膜作为栅极金属薄膜,ITO薄膜的厚度分别为200纳米,通过构图工艺使栅极金属薄膜形成栅电极2。衬底基板1为带有200纳米厚度的Si3N4水氧阻隔层的柔性基板。在衬底基板1上制备栅电极2后的示意图如图2所示。
步骤二,在完成上述步骤的衬底基板1上采用等离子体增强型化学气相沉积法沉积栅极绝缘层3。制备完成栅极绝缘层3后的示意图如图3所示。
栅极绝缘层3由100纳米的氧化硅、90纳米的五氧化二钽和20纳米的二氧化硅叠层而成。
步骤三,利用物理气相沉积法在栅极绝缘层3上沉积金属氧化物薄膜,通过构图工艺使金属氧化物薄膜形成有源层4的图案。金属氧化物薄膜为50纳米的IZO薄膜,其中铟和锌的原子比为1:1。制备完成有源层4的示意图如图4所示。
步骤四,在有源层4上采用溶液处理方法制备3纳米厚的银纳米粒子用为金属纳米粒子层5。制备完成金属纳米粒子层5的示意图如图5所示。
金属纳米粒子层5可以在后续刻蚀源电极7和漏电极8(如图6所示)时对有源层4进行保护,避免有源层4被腐蚀造成的金属氧化物薄膜晶体管不良。
需要说明的是,在步骤四中,还可以包括对金属纳米粒子层5进行退火的工艺。
步骤五,在完成上述工艺的衬底基板1上,采用物理气相沉积法沉积铜金属薄膜作为源漏极金属薄膜6,源漏极金属薄膜6为单层钼薄膜,厚度分别为200纳米。制备完成源漏极金属薄膜6的示意图如图6所示。
使用H2O2和H2SO4的混合溶液作为湿法刻蚀液,对源漏极金属薄膜6进行刻蚀,形成源电极7和漏电极8,源电极7和漏电极8覆盖部分金属纳米粒子层5。制备完成源电极7和漏电极8的示意图如图7所示。
步骤六,利用氧等离子体去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分。去除金属纳米粒子层5未被源电极7和漏电极8覆盖的部分的示意图如图8所示。
步骤七,采用等离子体增强型化学气相沉积法在完成上述工艺的衬底基板1上沉积300纳米的SiO2作为钝化层9,即在包括源电极7和漏电极8的源漏极金属层上形成钝化层9。制备完成钝化层9的示意图如图9所示。
实践发现,采用金属纳米粒子层5在背沟道刻蚀工艺中对有源层4进行保护,较有机导电薄膜进行保护更稳定,而且金属纳米粒子层导电性好、表面粗糙,非常有利于实现有源层4和源电极7、漏电极8之间的良好接触。
上述实施例一至实施例三仅是为了说明本发明所提供的部分具体实施例,本发明并不以此为限。所制备的金属氧化物薄膜晶体管可以用于液晶显示器、主动矩阵有机发光二极管显示器。实施例一至实施例三中各步骤中涉及的薄膜厚度、组成材料、配比比例等可以根据实际要求进行调整。
如图9所示,本发明实施例还提供一种薄膜晶体管,该薄膜晶体管为金属氧化物薄膜晶体管,包括:
衬底基板1;
形成于衬底基板1上的栅极金属层,栅极金属层包括栅电极2;
形成于栅极金属层之上的栅极绝缘层3;
形成于栅极绝缘层之上的有源层4;
形成于有源层4之上的金属纳米粒子层5,金属纳米粒子层5作为刻蚀保护层;
形成于金属纳米粒子层5之上的源漏极金属层,源漏极金属层包括源电极7和漏电极8;
形成于源漏极金属层之上的钝化层9。
需要说明的是,虚线框10所示的部分,为金属纳米粒子层5已经被去除的部分,是在形成源电极7和漏电极8之后去除。金属纳米粒子层5的该被去除的部分在制备源电极7和漏电极8时,能够对有源层4进行保护。
优选的,金属纳米粒子层5包括金纳米粒子、银纳米粒子、铂纳米粒子、铍纳米粒子、镍纳米粒子和钴纳米粒子中的至少一种。
优选的,金属纳米粒子层5的厚度为1~5纳米。
优选的,衬底基板1为具有缓冲层的玻璃基板。
优选的,衬底基板1为具有水氧阻隔层的柔性基板,柔性基板的材料为聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二酯、聚酰亚胺或者金属箔。
优选的,栅极金属层为铝薄膜、铜薄膜、钼薄膜、钛薄膜、银薄膜、金薄膜、钽薄膜、钨薄膜、铬薄膜和铝合金薄膜中任意一种单层膜层或至少两种以上构成的复合膜层,栅极金属层的厚度为100~2000纳米。需要说明的是,栅极金属层的材料和厚度即为制备方法中栅极金属薄膜的材料和厚度。
优选的,栅极绝缘层3为单层的氧化硅薄膜、氮化硅薄膜、氧化铝薄膜、五氧化二钽薄膜或氧化镱薄膜,或者栅极绝缘层3为至少两种以上单层的薄膜构成的复合薄膜,栅极绝缘层3的厚度为50~500纳米。
优选的,有源层4为含有In、Zn、Ga和Sn中的至少一种的金属氧化物,有源层4为的厚度为10~200纳米。
优选的,源漏极金属层为铝薄膜、铜薄膜、钼薄膜和钛薄膜中任意一种单层膜层或至少两种以上构成的复合膜层;源漏极金属层的厚度为100~2000纳米。需要说明的是,源漏极金属层的材料和厚度即为制备方法中源漏极金属薄膜的材料和厚度。
优选的,钝化层9可以为氧化硅、氮化硅、氧气化铝、氧化镱、聚酰亚胺、苯丙环丁烯或聚甲基丙烯酸甲酯中任意一种单层膜层或至少两种以上构成的复合膜层。优选的,钝化层9的厚度为50~2000纳米。
本发明实施例有益效果如下:以金属纳米粒子层作为有源层的保护层,可以在刻蚀源电极和漏电极时对有源层进行保护,避免对有源层被腐蚀所造成的器件不良;同时金属纳米粒子层具有良好的导电性,具有较好的热稳定性,对金属氧化物薄膜晶体管的制备工艺要求较低,从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
基于相的发明构思,本发明实施例还提供一种阵列基板,包括如上实施例提供的薄膜晶体管。
本发明实施例有益效果如下:该阵列基板中,金属氧化物薄膜晶体管以金属纳米粒子层作为有源层的保护层,可以在刻蚀源电极和漏电极时对有源层进行保护,避免对有源层被腐蚀所造成的器件不良;同时金属纳米粒子层具有良好的导电性,具有较好的热稳定性,对金属氧化物薄膜晶体管的制备工艺要求较低,从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
基于相的发明构思,本发明实施例提供一种显示面板,包括如上实施例提供的阵列基板。
本发明实施例有益效果如下:该显示面板所应用的阵列基板中,金属氧化物薄膜晶体管以金属纳米粒子层作为有源层的保护层,可以在刻蚀源电极和漏电极时对有源层进行保护,避免对有源层被腐蚀所造成的器件不良;同时金属纳米粒子层具有良好的导电性,具有较好的热稳定性,对金属氧化物薄膜晶体管的制备工艺要求较低,从而实现工艺简单、低成本的金属氧化物薄膜晶体管制备。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。
Claims (13)
1.一种薄膜晶体管的制备方法,其特征在于,包括:
在衬底基板上形成栅极金属薄膜,通过构图工艺使所述栅极金属薄膜形成包括栅电极的栅极金属层;
在所述栅极金属层上形成栅极绝缘层;
在所述栅极绝缘层上形成金属氧化物薄膜,通过构图工艺使所述金属氧化物薄膜形成有源层的图案;
在所述有源层上制备金属纳米粒子层,所述金属纳米粒子层作为刻蚀保护层;
在完成上述工艺的所述衬底基板上形成源漏极金属薄膜,通过构图工艺使所述源漏极金属薄膜形成包括源电极和漏电极的源漏极金属层,所述源电极和所述漏电极覆盖部分所述金属纳米粒子层;
利用氧等离子体去除或氧化所述金属纳米粒子层未被所述源电极和所述漏电极覆盖的部分;
在所述源漏极金属层上形成钝化层。
2.如权利要求1所述的制备方法,其特征在于,以金纳米粒子、银纳米粒子、铂纳米粒子、铍纳米粒子、镍纳米粒子和钴纳米粒子中的至少一种材料制备所述金属纳米粒子层。
3.如权利要求2所述的制备方法,其特征在于,在所述有源层上制备金属纳米粒子层,具体包括:
采用物理气相沉积、化学气相沉积、水热法、溶胶-凝胶法、喷雾热解法或热壁法在所述有源层上制备所述金属纳米粒子层。
4.如权利要求2所述的制备方法,其特征在于,以1~5纳米的厚度制备所述金属纳米粒子层。
5.如权利要求1至4任意一项所述的制备方法,其特征在于,以具有缓冲层的玻璃基板作为所述衬底基板。
6.如权利要求1至4任意一项所述的制备方法,其特征在于,以具有水氧阻隔层的柔性基板作为所述衬底基板,以聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二酯、聚酰亚胺或者金属箔作为所述柔性基板的材料。
7.根据权利要求1至4任意一项所述的制备方法,其特征在于,以铝薄膜、铜薄膜、钼薄膜、钛薄膜、银薄膜、金薄膜、钽薄膜、钨薄膜、铬薄膜和铝合金薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备所述栅极金属薄膜,且以100~2000纳米的厚度制备所述栅极金属薄膜。
8.根据权利要求1至4任意一项所述的制备方法,其特征在于,以单层的氧化硅薄膜、氮化硅薄膜、氧化铝薄膜、五氧化二钽薄膜或氧化镱薄膜制备所述栅极绝缘层,或者以至少两种以上单层的薄膜构成的复合薄膜制备所述栅极绝缘层,且以50~500纳米的厚度制备所述栅极绝缘层。
9.根据权利要求1至4任意一项所述的制备方法,其特征在于,以含有In、Zn、Ga和Sn中的至少一种的金属氧化物制备所述有源层,且以10~200纳米的厚度制备所述有源层。
10.根据权利要求1至4任意一项所述的制备方法,其特征在于,以铝薄膜、铜薄膜、钼薄膜和钛薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备所述源漏极金属薄膜,且以100~2000纳米的厚度制备所述源漏极金属薄膜。
11.一种薄膜晶体管,其特征在于,包括:
衬底基板;
形成于所述衬底基板上的栅极金属层,所述栅极金属层包括栅电极;
形成于所述栅极金属层之上的栅极绝缘层;
形成于所述栅极绝缘层之上的有源层;
形成于所述有源层之上的金属纳米粒子层,所述金属纳米粒子层作为刻蚀保护层;
形成于所述金属纳米粒子层之上的源漏极金属层,所述源漏极金属层包括源电极和漏电极;
形成于所述源漏极金属层之上的钝化层。
12.一种阵列基板,其特征在于,包括如权利要求11所述的薄膜晶体管。
13.一种显示面板,其特征在于,包括如权利要求12所述的阵列基板。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510232985.5A CN104934330A (zh) | 2015-05-08 | 2015-05-08 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
PCT/CN2015/091540 WO2016179951A1 (zh) | 2015-05-08 | 2015-10-09 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
EP15882903.6A EP3121840B1 (en) | 2015-05-08 | 2015-10-09 | Thin-film transistor and preparation method therefor, array substrate, and display panel |
US15/122,155 US20170154905A1 (en) | 2015-05-08 | 2015-10-09 | Thin film transistor and preparation method thereof, array substrate, and display panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510232985.5A CN104934330A (zh) | 2015-05-08 | 2015-05-08 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104934330A true CN104934330A (zh) | 2015-09-23 |
Family
ID=54121439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510232985.5A Pending CN104934330A (zh) | 2015-05-08 | 2015-05-08 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20170154905A1 (zh) |
EP (1) | EP3121840B1 (zh) |
CN (1) | CN104934330A (zh) |
WO (1) | WO2016179951A1 (zh) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016179951A1 (zh) * | 2015-05-08 | 2016-11-17 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
CN106773205A (zh) * | 2016-12-26 | 2017-05-31 | 京东方科技集团股份有限公司 | 显示面板及其制作方法以及显示装置 |
WO2018076285A1 (zh) * | 2016-10-28 | 2018-05-03 | 深圳市柔宇科技有限公司 | 阵列基板及其制造方法 |
CN108198824A (zh) * | 2018-01-17 | 2018-06-22 | 京东方科技集团股份有限公司 | 一种阵列基板的制备方法及阵列基板 |
CN109755259A (zh) * | 2018-12-21 | 2019-05-14 | 惠科股份有限公司 | 一种显示面板的制程方法和显示面板 |
CN109920855A (zh) * | 2019-02-13 | 2019-06-21 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管及其制作方法 |
CN109991787A (zh) * | 2019-03-15 | 2019-07-09 | 惠科股份有限公司 | 一种阵列基板及其制作方法 |
WO2019134535A1 (zh) * | 2018-01-05 | 2019-07-11 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、阵列基板、显示面板 |
CN110610867A (zh) * | 2019-08-20 | 2019-12-24 | 深圳市华星光电技术有限公司 | 薄膜晶体管制备方法及薄膜晶体管 |
CN110998811A (zh) * | 2019-11-21 | 2020-04-10 | 重庆康佳光电技术研究院有限公司 | 一种薄膜晶体管及其制造方法与薄膜晶体管阵列 |
CN113097134A (zh) * | 2021-04-09 | 2021-07-09 | 广州新视界光电科技有限公司 | 一种阵列基板的制备方法及阵列基板 |
WO2022141140A1 (zh) * | 2020-12-28 | 2022-07-07 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板制备方法、阵列基板及显示装置 |
CN114959397A (zh) * | 2022-04-28 | 2022-08-30 | 长沙惠科光电有限公司 | 合金靶材及其制备方法、应用、阵列基板 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6908247B2 (ja) * | 2016-11-02 | 2021-07-21 | エルジー・ケム・リミテッド | ガス感知センサー |
CN107833927A (zh) * | 2017-11-16 | 2018-03-23 | 佛山科学技术学院 | 一种氧化物薄膜晶体管及其制备方法 |
CN108615735B (zh) * | 2018-05-03 | 2021-01-22 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板的制作方法 |
CN109991772B (zh) * | 2019-03-29 | 2023-03-14 | 广州国显科技有限公司 | 显示面板膜层结构及其制备工艺 |
TWI690060B (zh) | 2019-04-25 | 2020-04-01 | 元太科技工業股份有限公司 | 記憶體結構及其製造方法 |
US11889721B2 (en) * | 2019-07-16 | 2024-01-30 | Ordos Yuansheng Optoelectronics Co., Ltd. | Display substrate, manufacturing method thereof and display device |
CN111524915B (zh) * | 2020-04-28 | 2022-07-12 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管器件及其制作方法 |
CN111584517A (zh) * | 2020-05-15 | 2020-08-25 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法 |
CN112736033B (zh) * | 2020-12-24 | 2023-04-18 | 吉林建筑大学 | 一种在蛋白质基底上制备大批量p型薄膜晶体管的方法 |
Family Cites Families (105)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6331356B1 (en) * | 1989-05-26 | 2001-12-18 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
JPH053319A (ja) * | 1991-06-25 | 1993-01-08 | Canon Inc | 薄膜半導体装置及びその製造方法 |
US5776425A (en) * | 1995-04-26 | 1998-07-07 | National Science Council | Method for preparing porous tin oxide monolith with high specific surface area and controlled degree of transparency |
JP4511092B2 (ja) * | 2000-12-11 | 2010-07-28 | セイコーエプソン株式会社 | 半導体素子の製造方法 |
KR100379824B1 (ko) * | 2000-12-20 | 2003-04-11 | 엘지.필립스 엘시디 주식회사 | 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판 |
US6679938B1 (en) * | 2001-01-26 | 2004-01-20 | University Of Maryland | Method of producing metal particles by spray pyrolysis using a co-solvent and apparatus therefor |
US20030113550A1 (en) * | 2001-09-14 | 2003-06-19 | Millett Frederick A. | Heat barrier window utilizing a combination of coatings |
DE10153563A1 (de) * | 2001-10-30 | 2003-05-15 | Infineon Technologies Ag | Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren durch Einbettung von Nanopartikeln zur Erzeugung von Feldüberhöhungen |
KR100415617B1 (ko) * | 2001-12-06 | 2004-01-24 | 엘지.필립스 엘시디 주식회사 | 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법 |
KR100866976B1 (ko) * | 2002-09-03 | 2008-11-05 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
US20040086807A1 (en) * | 2002-11-06 | 2004-05-06 | Chih-Yu Peng | Method of fabricating thin film transistor |
US7090783B1 (en) * | 2003-03-13 | 2006-08-15 | Louisiana Tech University Research Foundation As A Division Of The Louisiana Tech University Foundation | Lithography-based patterning of layer-by-layer nano-assembled thin films |
KR100602062B1 (ko) * | 2003-04-03 | 2006-07-14 | 엘지.필립스 엘시디 주식회사 | 수평 전계 인가형 액정 표시 장치 및 그 제조 방법 |
US7005752B2 (en) * | 2003-10-20 | 2006-02-28 | Texas Instruments Incorporated | Direct bumping on integrated circuit contacts enabled by metal-to-insulator adhesion |
US7276389B2 (en) * | 2004-02-25 | 2007-10-02 | Samsung Electronics Co., Ltd. | Article comprising metal oxide nanostructures and method for fabricating such nanostructures |
US7507618B2 (en) * | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
JP2007123773A (ja) * | 2005-10-31 | 2007-05-17 | Fuji Electric Holdings Co Ltd | 薄膜トランジスタ、及びその製造方法 |
JP4997750B2 (ja) * | 2005-12-12 | 2012-08-08 | 富士通株式会社 | カーボンナノチューブを用いた電子素子及びその製造方法 |
CN100374194C (zh) * | 2006-07-19 | 2008-03-12 | 北京工业大学 | 无机氧化物或金属纳米粒子的制备方法及设备 |
KR20080008562A (ko) * | 2006-07-20 | 2008-01-24 | 삼성전자주식회사 | 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치 |
US7919795B2 (en) * | 2006-12-21 | 2011-04-05 | Samsung Electronics Co., Ltd. | Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating the thin film transistor substrate |
TWI345835B (en) * | 2007-01-02 | 2011-07-21 | Chunghwa Picture Tubes Ltd | Organic thin film transistor and method for manufacturing thereof |
KR101325053B1 (ko) * | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
US20080296567A1 (en) * | 2007-06-04 | 2008-12-04 | Irving Lyn M | Method of making thin film transistors comprising zinc-oxide-based semiconductor materials |
US8207010B2 (en) * | 2007-06-05 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
KR100934260B1 (ko) * | 2007-09-14 | 2009-12-28 | 삼성모바일디스플레이주식회사 | 박막트랜지스터와 그의 제조방법, 유기전계발광표시장치와그의 제조방법 및 레이저 열 전사법용 도너기판 |
TWI348766B (en) * | 2007-10-04 | 2011-09-11 | Taiwan Tft Lcd Ass | Method of fabricating thin film transistor |
WO2009060922A1 (en) * | 2007-11-05 | 2009-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device having the thin film transistor |
US8048488B2 (en) * | 2008-01-14 | 2011-11-01 | Xerox Corporation | Methods for removing a stabilizer from a metal nanoparticle using a destabilizer |
KR100958006B1 (ko) * | 2008-06-18 | 2010-05-17 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP2010027783A (ja) * | 2008-07-17 | 2010-02-04 | Sharp Corp | 配線基板及び表示装置 |
TWI476921B (zh) * | 2008-07-31 | 2015-03-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
KR101637200B1 (ko) * | 2008-08-11 | 2016-07-07 | 지호우 도쿠리츠 교세이 호진 오사카 시리츠 고교 겐큐쇼 | 구리계 나노입자 및 그 제조방법 |
CN102119064B (zh) * | 2008-08-11 | 2015-04-01 | 地方独立行政法人大阪市立工业研究所 | 复合纳米粒子及其制造方法 |
KR101622981B1 (ko) * | 2008-09-19 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그 제조방법 |
JP5560281B2 (ja) * | 2008-11-17 | 2014-07-23 | アイメック | 有機デバイスの電気コンタクトを形成するための溶液処理方法 |
JP4752927B2 (ja) * | 2009-02-09 | 2011-08-17 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
US8247276B2 (en) * | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
US20100233361A1 (en) * | 2009-03-12 | 2010-09-16 | Xerox Corporation | Metal nanoparticle composition with improved adhesion |
US8236599B2 (en) * | 2009-04-09 | 2012-08-07 | State of Oregon acting by and through the State Board of Higher Education | Solution-based process for making inorganic materials |
WO2010123735A1 (en) * | 2009-04-24 | 2010-10-28 | Nanosys, Inc. | Nanoparticle plasmon scattering layer for photovoltaic cells |
US8865516B2 (en) * | 2009-06-29 | 2014-10-21 | Sharp Kabushiki Kaisha | Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device |
KR20120043051A (ko) * | 2009-08-04 | 2012-05-03 | 프리커서 에너제틱스, 인코퍼레이티드. | Cis 및 cigs 광기전체를 위한 중합체성 전구체 |
US20110059233A1 (en) * | 2009-09-04 | 2011-03-10 | Xerox Corporation | Method For Preparing Stabilized Metal Nanoparticles |
WO2011043164A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
WO2011043162A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
CN104465318B (zh) * | 2009-11-06 | 2018-04-24 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
FR2952384B1 (fr) * | 2009-11-10 | 2012-12-14 | Commissariat Energie Atomique | Depot selectif de nanoparticules |
WO2011068028A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and method for manufacturing the same |
US20120248450A1 (en) * | 2009-12-17 | 2012-10-04 | Sharp Kabushiki Kaisha | Active matrix substrate and method for producing same |
US20130026462A1 (en) * | 2010-03-04 | 2013-01-31 | Sharp Kabushiki Kaisha | Method for manufacturing thin film transistor and thin film transistor manufactured by the same, and active matrix substrate |
KR101280649B1 (ko) * | 2010-03-11 | 2013-07-01 | 샤프 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
WO2011127095A2 (en) * | 2010-04-05 | 2011-10-13 | Gonano Technologies, Inc. | Catalytic converters, insert materials for catalytic converters, and methods of making |
WO2011125275A1 (ja) * | 2010-04-06 | 2011-10-13 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法 |
US8450236B2 (en) * | 2010-04-13 | 2013-05-28 | Cristal Usa Inc. | Supported precious metal catalysts via hydrothermal deposition |
WO2011132625A1 (en) * | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US20110263079A1 (en) * | 2010-04-23 | 2011-10-27 | Applies Materials, Inc. | Interface protection layaer used in a thin film transistor structure |
WO2011155125A1 (ja) * | 2010-06-08 | 2011-12-15 | シャープ株式会社 | 薄膜トランジスタ基板及びそれを備えた液晶表示装置並びに薄膜トランジスタ基板の製造方法 |
US8765025B2 (en) * | 2010-06-09 | 2014-07-01 | Xerox Corporation | Silver nanoparticle composition comprising solvents with specific hansen solubility parameters |
FR2961219B1 (fr) * | 2010-06-09 | 2012-07-13 | Essilor Int | Procede de preparation a basse temperature de revetements mesostructures electroconducteurs |
US9368599B2 (en) * | 2010-06-22 | 2016-06-14 | International Business Machines Corporation | Graphene/nanostructure FET with self-aligned contact and gate |
US8158032B2 (en) * | 2010-08-20 | 2012-04-17 | Xerox Corporation | Silver nanoparticle ink composition for highly conductive features with enhanced mechanical properties |
US8664097B2 (en) * | 2010-09-13 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
WO2012044978A2 (en) * | 2010-10-01 | 2012-04-05 | Applied Materials, Inc. | High efficiency solar cell device with gallium arsenide absorber layer |
PT105340A (pt) * | 2010-10-18 | 2012-04-18 | Innovnano Materiais Avancados S A | Processo contínuo de síntese de nanomateriais a partir da emulsificação e detonação em simultâneo de uma emulsão |
KR101789586B1 (ko) * | 2010-12-06 | 2017-10-26 | 삼성디스플레이 주식회사 | 광 산란 기판, 이의 제조 방법, 이를 포함하는 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR101843871B1 (ko) * | 2011-03-11 | 2018-04-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US8586134B2 (en) * | 2011-05-06 | 2013-11-19 | Xerox Corporation | Method of fabricating high-resolution features |
KR101934977B1 (ko) * | 2011-08-02 | 2019-03-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
TWI491050B (zh) * | 2011-11-25 | 2015-07-01 | Sony Corp | 電晶體,顯示器及電子裝置 |
US8916424B2 (en) * | 2012-02-07 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20130207111A1 (en) * | 2012-02-09 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device |
TWI474409B (zh) * | 2012-02-14 | 2015-02-21 | Innocom Tech Shenzhen Co Ltd | 薄膜電晶體及其製作方法及顯示器 |
US8940197B2 (en) * | 2012-02-24 | 2015-01-27 | Xerox Corporation | Processes for producing palladium nanoparticle inks |
JP2013201211A (ja) * | 2012-03-23 | 2013-10-03 | Sony Corp | 薄膜トランジスタ、薄膜トランジスタの製造方法および電子機器 |
CN104335332B (zh) * | 2012-05-28 | 2017-09-05 | 夏普株式会社 | 半导体装置及其制造方法 |
JP6382803B2 (ja) * | 2012-06-27 | 2018-08-29 | スリーエム イノベイティブ プロパティズ カンパニー | 光学部品アレイ |
WO2014004776A2 (en) * | 2012-06-27 | 2014-01-03 | Precursor Energetics, Inc. | Molecular precursors for lithium ion battery cathode materials |
JP6006558B2 (ja) * | 2012-07-17 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置及びその製造方法 |
US9437892B2 (en) * | 2012-07-26 | 2016-09-06 | Quswami, Inc. | System and method for converting chemical energy into electrical energy using nano-engineered porous network materials |
JP2014032999A (ja) * | 2012-08-01 | 2014-02-20 | Panasonic Liquid Crystal Display Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP6078920B2 (ja) * | 2013-02-13 | 2017-02-15 | 国立大学法人広島大学 | 薄膜形成方法、及びそれを用いて作製した半導体基板ならびに電子デバイス |
CN103236443B (zh) * | 2013-05-14 | 2014-05-14 | 广州新视界光电科技有限公司 | 一种金属氧化物薄膜晶体管及其制备方法 |
US9105373B2 (en) * | 2013-06-19 | 2015-08-11 | Xerox Corporation | Safe method for manufacturing silver nanoparticle inks |
KR102290801B1 (ko) * | 2013-06-21 | 2021-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
JP6264090B2 (ja) * | 2013-07-31 | 2018-01-24 | 株式会社リコー | 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法 |
TWI487625B (zh) * | 2013-08-22 | 2015-06-11 | Ind Tech Res Inst | 紅外光阻隔之金屬氧化物多層膜結構 |
JP6135427B2 (ja) * | 2013-09-27 | 2017-05-31 | 凸版印刷株式会社 | 薄膜トランジスタアレイおよびその製造方法 |
JP5867842B2 (ja) * | 2013-11-20 | 2016-02-24 | 国立大学法人山形大学 | 銀ナノ粒子の製造方法 |
JP5924609B2 (ja) * | 2013-12-03 | 2016-05-25 | 国立大学法人山形大学 | 金属薄膜の製造方法及び導電構造の製造方法 |
CN103730414B (zh) * | 2013-12-31 | 2016-02-24 | 深圳市华星光电技术有限公司 | 薄膜晶体管基板的制造方法 |
CN103972299B (zh) * | 2014-04-28 | 2016-03-30 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、显示基板、显示装置 |
CN104241392B (zh) * | 2014-07-14 | 2017-07-14 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、显示基板和显示设备 |
TWI566388B (zh) * | 2014-08-12 | 2017-01-11 | 群創光電股份有限公司 | 顯示面板 |
CN104241394A (zh) * | 2014-08-29 | 2014-12-24 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及相应的制备方法、显示基板和显示装置 |
US9634145B2 (en) * | 2014-10-29 | 2017-04-25 | Eastman Kodak Company | TFT substrate with variable dielectric thickness |
KR102328917B1 (ko) * | 2014-09-22 | 2021-11-19 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 |
US9738807B2 (en) * | 2014-10-08 | 2017-08-22 | Kabushiki Kaisha Toshiba | Method of forming pattern and pattern |
CN104409515A (zh) * | 2014-11-26 | 2015-03-11 | 京东方科技集团股份有限公司 | 氧化物薄膜晶体管及其制作方法、阵列基板和显示装置 |
WO2016084699A1 (ja) * | 2014-11-28 | 2016-06-02 | シャープ株式会社 | 半導体装置およびその製造方法 |
CN104716198B (zh) * | 2015-03-25 | 2018-03-27 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、显示装置 |
CN104934330A (zh) * | 2015-05-08 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
CN104779302A (zh) * | 2015-05-11 | 2015-07-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板、显示装置 |
US20170218529A1 (en) * | 2016-01-28 | 2017-08-03 | Johnson Matthey Public Limited Company | Cathode material |
JP2017143108A (ja) * | 2016-02-08 | 2017-08-17 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
-
2015
- 2015-05-08 CN CN201510232985.5A patent/CN104934330A/zh active Pending
- 2015-10-09 EP EP15882903.6A patent/EP3121840B1/en active Active
- 2015-10-09 WO PCT/CN2015/091540 patent/WO2016179951A1/zh active Application Filing
- 2015-10-09 US US15/122,155 patent/US20170154905A1/en not_active Abandoned
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016179951A1 (zh) * | 2015-05-08 | 2016-11-17 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
WO2018076285A1 (zh) * | 2016-10-28 | 2018-05-03 | 深圳市柔宇科技有限公司 | 阵列基板及其制造方法 |
US10551709B2 (en) | 2016-12-26 | 2020-02-04 | Boe Technology Group Co., Ltd. | Display panel having an opposing substrate provided with a gate electrode, manufacturing method thereof, and display device |
CN106773205A (zh) * | 2016-12-26 | 2017-05-31 | 京东方科技集团股份有限公司 | 显示面板及其制作方法以及显示装置 |
WO2018120695A1 (zh) * | 2016-12-26 | 2018-07-05 | 京东方科技集团股份有限公司 | 显示面板及其制作方法以及显示装置 |
CN106773205B (zh) * | 2016-12-26 | 2019-09-17 | 京东方科技集团股份有限公司 | 显示面板及其制作方法以及显示装置 |
US11233154B2 (en) | 2018-01-05 | 2022-01-25 | Beijing Boe Display Technology Co., Ltd. | Thin film transistor and manufacturing method thereof, array substrate, and display panel |
WO2019134535A1 (zh) * | 2018-01-05 | 2019-07-11 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、阵列基板、显示面板 |
CN110010695A (zh) * | 2018-01-05 | 2019-07-12 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及其制造方法、显示面板 |
CN108198824A (zh) * | 2018-01-17 | 2018-06-22 | 京东方科技集团股份有限公司 | 一种阵列基板的制备方法及阵列基板 |
CN108198824B (zh) * | 2018-01-17 | 2020-06-16 | 京东方科技集团股份有限公司 | 一种阵列基板的制备方法 |
CN109755259A (zh) * | 2018-12-21 | 2019-05-14 | 惠科股份有限公司 | 一种显示面板的制程方法和显示面板 |
CN109920855A (zh) * | 2019-02-13 | 2019-06-21 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管及其制作方法 |
WO2020164220A1 (zh) * | 2019-02-13 | 2020-08-20 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管及其制作方法 |
CN109920855B (zh) * | 2019-02-13 | 2020-11-03 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管及其制作方法 |
CN109991787A (zh) * | 2019-03-15 | 2019-07-09 | 惠科股份有限公司 | 一种阵列基板及其制作方法 |
CN110610867A (zh) * | 2019-08-20 | 2019-12-24 | 深圳市华星光电技术有限公司 | 薄膜晶体管制备方法及薄膜晶体管 |
CN110998811A (zh) * | 2019-11-21 | 2020-04-10 | 重庆康佳光电技术研究院有限公司 | 一种薄膜晶体管及其制造方法与薄膜晶体管阵列 |
WO2021097733A1 (zh) * | 2019-11-21 | 2021-05-27 | 重庆康佳光电技术研究院有限公司 | 一种薄膜晶体管及其制造方法与薄膜晶体管阵列 |
CN110998811B (zh) * | 2019-11-21 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | 一种薄膜晶体管及其制造方法与薄膜晶体管阵列 |
WO2022141140A1 (zh) * | 2020-12-28 | 2022-07-07 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板制备方法、阵列基板及显示装置 |
CN113097134A (zh) * | 2021-04-09 | 2021-07-09 | 广州新视界光电科技有限公司 | 一种阵列基板的制备方法及阵列基板 |
CN113097134B (zh) * | 2021-04-09 | 2022-07-15 | 广州新视界光电科技有限公司 | 一种阵列基板的制备方法及阵列基板 |
CN114959397A (zh) * | 2022-04-28 | 2022-08-30 | 长沙惠科光电有限公司 | 合金靶材及其制备方法、应用、阵列基板 |
Also Published As
Publication number | Publication date |
---|---|
WO2016179951A1 (zh) | 2016-11-17 |
EP3121840B1 (en) | 2020-08-12 |
EP3121840A4 (en) | 2017-11-22 |
EP3121840A1 (en) | 2017-01-25 |
US20170154905A1 (en) | 2017-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104934330A (zh) | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 | |
Kwon et al. | Improvement in negative bias stress stability of solution-processed amorphous In–Ga–Zn–O thin-film transistors using hydrogen peroxide | |
Sheng et al. | Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes | |
EP2717315B1 (en) | Copper-based metal wiring comprising oxide layer including indium and zinc | |
CN104716198B (zh) | 薄膜晶体管及其制造方法、显示装置 | |
CN103311130B (zh) | 一种非晶金属氧化物薄膜晶体管及其制备方法 | |
CN102629591B (zh) | 一种阵列基板的制造方法及阵列基板、显示器 | |
CN103545221B (zh) | 金属氧化物薄膜晶体管及其制备方法 | |
CN104979406B (zh) | 薄膜晶体管、阵列基板及其制备方法和显示装置 | |
CN103236443A (zh) | 一种金属氧化物薄膜晶体管及其制备方法 | |
CN104934481A (zh) | 一种薄膜晶体管及其制备方法 | |
CN103794652B (zh) | 金属氧化物半导体薄膜晶体管及其制备方法 | |
CN102683422A (zh) | 氧化物薄膜晶体管及制作方法、阵列基板、显示装置 | |
CN105633170A (zh) | 金属氧化物薄膜晶体管及其制备方法以及阵列基板和显示装置 | |
CN102723279A (zh) | 一种金属氧化物薄膜晶体管的制作方法 | |
CN103500738A (zh) | 含刻蚀阻挡层的半导体器件及其制造方法和应用 | |
CN103715272A (zh) | 金属氧化物薄膜晶体管及其制备方法 | |
CN108474986A (zh) | 薄膜晶体管及其制造方法、具有该薄膜晶体管的显示基板和显示面板 | |
US20170243891A1 (en) | Method for manufacturing thin film transistor, and thin film transistor | |
TWI501404B (zh) | 製造igzo層和tft的方法 | |
CN208722925U (zh) | 一种显示器件的封装结构、显示装置 | |
Lee et al. | Influences of Oxygen Plasma Posttreatment on Electrical Characteristics of Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistors | |
CN107579006B (zh) | 一种薄膜晶体管、阵列基板及其制备方法 | |
US9397223B2 (en) | Oxide thin film transistor with a metal oxide etch barrier layer, method of manufacturing the same and display device | |
CN103094204A (zh) | 制造液晶显示装置的阵列基板的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150923 |
|
RJ01 | Rejection of invention patent application after publication |