WO2018120695A1 - 显示面板及其制作方法以及显示装置 - Google Patents

显示面板及其制作方法以及显示装置 Download PDF

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Publication number
WO2018120695A1
WO2018120695A1 PCT/CN2017/090556 CN2017090556W WO2018120695A1 WO 2018120695 A1 WO2018120695 A1 WO 2018120695A1 CN 2017090556 W CN2017090556 W CN 2017090556W WO 2018120695 A1 WO2018120695 A1 WO 2018120695A1
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Prior art keywords
substrate
display panel
gate
channel region
passivation layer
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PCT/CN2017/090556
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English (en)
French (fr)
Inventor
曹可
杨成绍
操彬彬
韩领
Original Assignee
京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥鑫晟光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/747,694 priority Critical patent/US10551709B2/en
Publication of WO2018120695A1 publication Critical patent/WO2018120695A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1339—Gaskets; Spacers; Sealing of cells
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
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    • G02—OPTICS
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
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    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/42312—Gate electrodes for field effect devices
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    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133354—Arrangements for aligning or assembling substrates
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1339—Gaskets; Spacers; Sealing of cells
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates

Abstract

一种显示面板及其制作方法以及显示装置。该显示面板包括相对设置的阵列基板(110)和对置基板(120)；阵列基板(110)包括第一衬底基板(111)以及设置在第一衬底基板(111)上的源极(112)、漏极(113)、有源层(114)以及设置在源极(112)、漏极(113)和有源层(114)上的钝化层(115)；对置基板(120)包括第二衬底基板(121)和设置在第二衬底基板(121)上的栅极(122)；有源层(114)包括源极区域(1141)、漏极区域(1143)以及源极区域(1141)和漏极区域(1143)之间的沟道区(1142)，栅极(122)与沟道区(1142)所在位置处的钝化层(115)相对间隔设置。由此，该显示面板可用于形成曲面显示面板，并具有较高的良率和品质。

Description

显示面板及其制作方法以及显示装置 技术领域
本公开的实施例涉及一种显示面板及其制作方法以及显示装置。
背景技术
随着显示技术的不断发展，曲面显示面板越来越流行。通常，曲面显示面板的整个屏幕为朝用户方向包围的弧形设计，从而可提供宽阔的全景影像效果。相对于平面显示面板，除了显示面板的屏幕中心，曲面显示面板的屏幕边缘也能提供较佳的观看效果。
通常，曲面液晶显示面板通过先制作平面液晶显示面板，然后弯曲平面液晶显示面板制成。液晶显示面板包括阵列基板、彩膜基板以及设置在阵列基板和彩膜基板之间的液晶层。阵列基板包括衬底基板、设置在衬底基板上的由栅极、栅极绝缘层、有源层、源漏电极等组成的薄膜晶体管阵列以及像素电极等。彩膜基板包括衬底基板、设置在衬底基板上的彩膜片和黑矩阵等。
发明内容
本公开至少一个实施例提供一种显示面板及其制作方法以及显示装置。该显示面板包括相对间隔设置的阵列基板和对置基板；阵列基板包括第一衬底基板以及设置在第一衬底基板上的源极、漏极、有源层以及设置在源极、漏极和有源层上的钝化层；对置基板包括第二衬底基板和设置在第二衬底基板上的栅极；有源层包括源极区域、漏极区域以及源极区域和漏极区域之间的沟道区，栅极与沟道区所在位置处的钝化层相对间隔设置。由此，该显示面板可用于形成曲面显示面板，并具有较高的良率和品质。
本公开至少一个实施例提供一种显示面板，其包括：阵列基板，包括第一衬底基板以及设置在所述第一衬底基板上的源极、漏极、有源层以及设置在所述源极、所述漏极和所述有源层上的钝化层；以及对置基板，与所述阵列基板相对间隔设置且包括第二衬底基板，所述有源层包括源极区域、漏极区域以及所述源极区域和所述漏极区域之间的沟道区，所述对置基板还包括设置在所述第二衬底基板上的栅极，所述栅极与所述沟道区所在位置处的所述钝化层相对间隔设置。
例如，在本公开一实施例提供的显示面板中，所述显示面板被配置为弯曲以使得所述栅极与所述沟道区所在位置处的所述钝化层的间隔减小。
例如，在本公开一实施例提供的显示面板中，所述对置基板还包括：保护层，设置在所述栅极靠近所述阵列基板的一侧，所述栅极所在位置处的保护层与所述沟道区所在位置处的所述钝化层相对间隔设置。
例如，在本公开一实施例提供的显示面板中，所述显示面板被配置为弯曲以使得所述栅极所在位置处的所述保护层与所述沟道区所在位置处的所述钝化层接触设置。
例如，在本公开一实施例提供的显示面板中，所述栅极所在位置处的所述保护层突出于所述对置基板并形成突起，所述沟道区所在位置处的所述钝化层凹向所述第一衬底基板并形成凹槽，所述突起被配置为插入所述凹槽。
例如，在本公开一实施例提供的显示面板中，所述对置基板还包括：多个滤光片；以及黑矩阵，所述黑矩阵设置在各所述滤光片周边，所述栅极在所述第二衬底基板上的正投影落入所述黑矩阵在所述第二衬底基板上的正投影。
例如，在本公开一实施例提供的显示面板中，所述多个滤光片呈阵列排布，所述对置基板还包括：栅线，沿所述阵列的行方向延伸，所述栅线与所述滤光片交叠。
例如，在本公开一实施例提供的显示面板中，所述对置基板还包括：隔垫物，所述隔垫物在所述第二衬底基板上的正投影落入所述黑矩阵在所述第二衬底基板上的正投影。
例如，本公开至少一个实施例提供一种显示面板的制作方法，其包括：在第一衬底基板上形成源极、漏极、有源层以及钝化层以形成阵列基板，所述有源层包括源极区域、漏极区域以及所述源极区域和漏极区域之间的沟道区；在第二衬底基板上形成栅极以形成对置基板；以及将所述阵列基板和所述对置基板对盒，且使所述第一衬底基板的形成有所述源极、漏极、有源层以及钝化层的一侧面对所述第二衬底基板的形成有所述栅极的一侧，所述栅极与所述沟道区所在位置处的所述钝化层相对间隔设置。
例如，本公开一实施例提供的显示面板的制作方法还包括：弯曲所述显示面板以形成曲面显示面板，以使得所述栅极与所述沟道区所在位置处的所述钝化层的间隔减小。
例如，本公开一实施例提供的显示面板的制作方法还包括：在所述弯曲所 述显示面板以形成曲面显示面板之前，在所述栅极远离所述第二衬底基板的一侧形成保护层，所述栅极所在位置处的所述保护层与所述沟道区所在位置处的所述钝化层相对间隔设置。
例如，在本公开一实施例提供的显示面板的制作方法中，所述弯曲所述显示面板以形成曲面显示面板，以使得所述栅极与所述沟道区所在位置处的所述钝化层的间隔减小具体包括：弯曲所述显示面板以形成曲面显示面板，以使得所述栅极所在位置处的所述保护层与所述沟道区所在位置处的所述钝化层接触设置。
例如，在本公开一实施例提供的显示面板的制作方法中，所述弯曲所述显示面板以形成曲面显示面板，以使得所述栅极与所述沟道区所在位置处的所述钝化层的间隔减小包括：根据所述源极、所述漏极、所述有源层的电学性质控制弯曲所述显示面板的弯曲程度。
例如，在本公开一实施例提供的显示面板的制作方法中，所述对盒所述阵列基板和所述对置基板在真空环境下进行。
例如，本公开至少一个实施例提供一种显示装置，其包括上述任一项所述的显示面板。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为本公开一实施例提供的一种显示面板的结构示意图；
图2为本公开一实施例提供的另一种显示面板的结构示意图；
图3为本公开一实施例提供的另一种显示面板的结构示意图；
图4为本公开一实施例提供的一种显示面板的阵列基板的平面示意图；
图5为本公开一实施例提供的一种显示面板的对置基板的平面示意图；
图6为本公开一实施例提供的一种显示面板的制作方法的流程图；
图7a-7e为本公开一实施例提供的一种显示面板的制作方法中制作阵列基板的步骤示意图；以及
图8a-8e为本公开一实施例提供的一种显示面板的制作方法中制作对置基板的步骤示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。
在研究中，本申请的发明人发现：在曲面液晶显示面板的制备过程中，需要重点监控阵列基板和对置基板(即，上下基板)在弯曲时阵列基板和对置基板的间距以及液晶量的控制；极小的参数变化都会改变曲面液晶显示面板的显示效果。然而，通常的曲面液晶显示面板的各类参数(例如阵列基板和对置基板的间距以及液晶量)较为复杂和难以控制。因此，本申请的发明人想到利用在对置基板上形成栅极，在确定最佳弯曲程度后，可通过设置栅极与阵列基板的距离来使得弯曲后的显示面板具有最佳的显示效果；或者，在栅极与阵列基板的距离固定的前提下可通过调整弯曲程度来保证最佳效果，从而可大大增加各类参数的调控范围，使产品良率更高。
本公开至少一个实施例提供一种显示面板及其制作方法以及显示装置。该显示面板包括相对间隔设置的阵列基板和对置基板；阵列基板包括第一衬底基板以及设置在第一衬底基板上的源极、漏极、有源层以及设置在源极、漏极和有源层上的钝化层；对置基板包括第二衬底基板和设置在第二衬底基板上的栅极；有源层包括源极区域、漏极区域以及源极区域和漏极区域之间的沟道区，栅极与沟道区所在位置处的钝化层相对间隔设置。由此，该显示面板可用于形成曲面显示面板，并具有较高的良率和品质。
下面结合附图对本公开实施例提供的显示面板及其制作方法以及显示装 置进行说明。
实施例一
本实施例提供一种显示面板，如图1所示，该显示面板包括相对设置的阵列基板110和对置基板120。阵列基板110包括第一衬底基板111以及设置在第一衬底基板111上的源极112、漏极113、有源层114以及设置在源极112、漏极113和有源层114上的钝化层115。对置基板120包括第二衬底基板121和设置在第二衬底基板121上的栅极122。有源层114包括源极区域1141、漏极区域1143以及源极区域1141和漏极区域1143之间的沟道区1142，栅极122与沟道区1142所在位置处的钝化层115相对间隔设置，也就是说，栅极122与沟道区1142所在位置处的阵列基板110靠近对置基板120一侧表面相对间隔设置。需要说明的是，上述的相对是指栅极与沟道区大致相对设置，并非严格正对，只要该显示面板弯曲后的栅极所产生的电场可作用于沟道区即可。
在本实施例提供的显示面板中，栅极与沟道区所在位置处的钝化层相对间隔设置，该显示面板可用于形成曲面显示面板。当该显示面板弯曲时，阵列基板和对置基板之间的间距减小，栅极与沟道区所在位置处的钝化层之间的距离减小，栅极靠近沟道区并可起到栅极的作用，即栅极上产生的电场可作用于沟道区。由此，在确定最佳弯曲程度的情况下，可通过设置栅极与钝化层的距离来使得弯曲后的显示面板具有最佳的显示效果，例如，弯曲后的显示面板中栅极与沟道区的距离恰好为显示效果最好的距离；或者，在栅极与钝化层的距离固定的情况下，可通过调整弯曲程度来保证最佳效果，从而可大大增加各类参数的调控范围，使产品良率更高。
例如，在本实施例一示例提供的显示面板中，如图1所示，对置基板120还包括设置在栅极122靠近阵列基板110一侧(或远离第二衬底基板121一侧)的保护层124，栅极122所在位置处的保护层124与沟道区1142所在位置处的钝化层115相对间隔设置，也就是说，栅极122所在位置处的保护层124与沟道区1142所在位置处的阵列基板110靠近对置基板120一侧表面相对间隔设置。由此，保护层可起到保护栅极的作用，例如，防止栅极被液晶腐蚀或氧化。
例如，第一衬底基板和第二衬底基板的材料可包括玻璃基板、石英基板、树脂基板等。栅极的材料可包括选自铬、钼、铝、铜、铝合金、铜合金等中的一种或多种。有源层的材料可包括氧化物半导体、非晶硅、多晶硅或其他半导体材料。
例如，在本实施例一示例提供的显示面板中，如图2所示，该显示面板被配置为弯曲以使得栅极122(或栅极122所在位置处的保护层124)与沟道区114所在位置处的钝化层115的间隔减小。由此，该显示面板可用于形成曲面显示面板。
例如，在本实施例一示例提供的显示面板中，如图3所示，该显示面板被配置为弯曲以使得栅极122所在位置处的保护层124与沟道区114所在位置处的钝化层115接触设置。此时，栅极122与沟道区114的间距最小，栅极122上产生的电场对沟道区114的作用最大，并且栅极122可起到维持由阵列基板110和对置基板120所形成的液晶盒厚度的作用，从而增加该显示面板的稳定性。
例如，在本实施例一示例提供的显示面板中，如图1-3所示，栅极122所在位置处的保护层124突出于对置基板120并形成突起，沟道区114所在位置处的钝化层115凹向第一衬底基板111并形成凹槽，突起可插入凹槽。由此，当该显示面板弯曲后，栅极所在位置处的保护层突出于对置基板所形成的突起插入沟道区所在位置处的阵列基板的靠近对置基板一侧表面凹向第一衬底基板所形成凹槽，可使栅极与沟道区的相对位置固定，进一步提高该显示面板的稳定性。
例如，在本实施例一示例提供的显示面板中，如图1-3所示，源极112、漏极113设置在第一衬底基板111靠近对置基板120的一侧，有源层114设置在源极113、漏极114和第一衬底基板111上，源极区域1141与源极112电性相连，漏极区域1143与漏极113相连。栅极122与沟道区1142相对间隔设置。当该显示面板弯曲时，栅极122、源极112、漏极113以及有源层114可构成一个薄膜晶体管结构。
例如，在本实施例一示例提供的显示面板中，如图1-3所示，阵列基板110还包括设置在第一衬底基板111上的公共电极116、设置在源极112、漏极113、有源层114以及公共电极116上的钝化层115、设置在钝化层115中并暴露部分漏极113的过孔1150、以及设置在钝化层115上且通过过孔1150与漏极113电性相连的像素电极118。
例如，如图1-3所示，阵列基板110还包括设置在第一衬底基板111上的公共电极线117，公共电极116与公共电极线117电性相连。
例如，该显示面板还包括设置在阵列基板和对置基板之间的液晶层(图中 未示出)，像素电极和公共电极可产生电场以驱动液晶层中的液晶偏转以实现显示功能。
例如，公共电极和像素电极的材料可包括金属或透明氧化物材料。钝化层的材料可为SiO、SiNO等无机绝缘材料或有机玻璃、聚酰亚胺等有机绝缘材料。
例如，在本实施例一示例提供的显示面板中，如图1-3所示，阵列基板110还包括设置在像素电极118上的第一配向膜119，用于对液晶分子进行配向。
例如，在本实施例一示例提供的显示面板中，如图1-3所示，对置基板120还包括多个滤光片125以及黑矩阵123。黑矩阵123设置在滤光片125周边，栅极122在第二衬底基板121上的正投影落入黑矩阵123在第二衬底基板121上的正投影，也就是说，栅极122设置在黑矩阵123靠近阵列基板110的一侧上。由此，设置在对置基板120上的栅极122不会影响该显示面板的开口率。另外栅极122设置在黑矩阵123靠近阵列基板110的一侧上有利于栅极122所在位置处的保护层124形成向阵列基板110凸起的突起。当然，本公开实施例包括但不限于此，栅极在第二衬底基板上的正投影也可不落入黑矩阵在第二衬底基板上的正投影。
例如，多个滤光片可包括蓝色滤光片、红色滤光片和绿色滤光片。当然，本公开实施例包括但不限于此。
例如，在本实施例一示例提供的显示面板中，如图1-3所示，对置基板120还包括隔垫物128。隔垫物128在第二衬底基板121上的正投影落入黑矩阵123在第二衬底基板121上的正投影。也就是说，隔垫物128设置在黑矩阵123靠近阵列基板110的一侧上。由此，隔垫物128不会影响该显示面板的开口率。另外，由于黑矩阵123相对第二衬底基板121具有一定高度，隔垫物128设置在黑矩阵123靠近阵列基板110的一侧上有利于在保持同样的盒厚的前提下降低隔垫物的高度。当然，本公开实施例包括但不限于此，隔垫物在第二衬底基板上的正投影也可不落入黑矩阵在第二衬底基板上的正投影。
例如，在本实施例一示例提供的显示面板中，如图1-3所示，对置基板120还包括第二配向膜129，设置在保护层124靠近阵列基板110的一侧。
例如，如图1-3所示，第一配向膜119和第二配向膜129相对设置并且只设置在像素电极118所对应的区域，栅极122和沟道区1142所对应的区域不设置第一配向膜119和第二配向膜129。当然，本公开实施例包括但不限于此， 第一配向膜119和第二配向膜129也可设置在栅极122和沟道区1142所对应的区域。
例如，在本实施例一示例提供的显示面板的阵列基板上，如图4所示，像素电极118呈阵列排布，有源层114、源极112、漏极113设置在像素电极118的一侧，且位于各像素电极118沿列方向的中间位置。需要说明的是，上述的中间位置包括但不限于像素电极沿列方向的中点。
例如，在本实施例一示例提供的显示面板的对置基板上，如图5所示，多个滤光片125呈阵列排布，对置基板120还包括沿多个滤光片125所形成的阵列的行方向延伸的栅线126，栅线126与滤光片125交叠。
例如，如图5所示，隔垫物128设置在靠近滤光片125边角的区域。由此，隔垫物128可更好地维持盒厚。
实施例二
本实施例提供一种显示面板的制作方法，如图6所示，其包括步骤S201-S203。
步骤S201：在第一衬底基板上形成源极、漏极、有源层以及钝化层以形成阵列基板，有源层包括源极区域、漏极区域以及源极区域和区域之间的沟道区。
步骤S202：在第二衬底基板上形成栅极以形成对置基板。
步骤S203：将阵列基板和对置基板对盒，且使第一衬底基板的形成有源极、漏极、有源层以及钝化层的一侧面对第二衬底基板的形成有栅极的一侧，栅极与沟道区所在位置处的钝化层相对间隔设置。
在本实施例提供的显示面板的制作方法中，通过将栅极形成在对置基板上，并且栅极与沟道区所在位置处的钝化层间隔设置，可用于形成曲面显示面板。在显示面板弯曲时，阵列基板和对置基板之间的间距减小，栅极与沟道区所在位置处的钝化层之间的距离减小，栅极靠近沟道区并可起到栅极的作用。由此，在确定最佳弯曲程度的情况下，可通过设置栅极与钝化层的距离来使得弯曲后的显示面板具有最佳的显示效果，例如，弯曲后的显示面板中栅极与沟道区的距离恰好为显示效果最好的距离；或者，在栅极与钝化层的距离固定的情况下，可通过调整弯曲程度来保证最佳效果，从而可大大增加各类参数的调控范围，使产品良率更高。
例如，本实施例一示例提供的显示面板的制作方法中还可包括：在所述栅极远离所述第二衬底基板的一侧形成保护层，所述栅极所在位置处的所述保护 层与所述沟道区所在位置处的所述钝化层相对间隔设置。由此，保护层可起到保护栅极的作用，例如，防止栅极被液晶腐蚀或氧化。
例如，可在真空环境下进行对盒，从而可进一步提高该制作方法的良率。
例如，在本实施例一示例提供的显示面板的制作方法中，还包括：弯曲上述显示面板以形成曲面显示面板，以使得栅极(或栅极所在位置处的保护层)与沟道区所在位置处的钝化层的间隔减小。由此，在弯曲上述显示面板之后，对置基板上的栅极上所产生的电场可作用于阵列基板上的沟道区，从而起到栅极的作用。并且，可通过设置弯曲的程度来使包括栅极、有源层、源极、漏极的薄膜晶体管的电学性能达到最佳，从而使显示面板实现最佳显示效果。
例如，在本实施例一示例提供的显示面板的制作方法中，还包括：弯曲显示面板以形成曲面显示面板，以使得栅极(或栅极所在位置处的保护层)与沟道区所在位置处的钝化层的接触设置。此时，栅极与沟道区的距离最短，并且，栅极可起到维持由阵列基板和对置基板所形成的液晶盒厚度的作用，从而增加该显示面板的稳定性。
例如，在本实施例一示例提供的显示面板的制作方法中，还包括：根据源极、漏极、有源层的电学性质控制弯曲显示面板的弯曲程度，以使得栅极(或栅极所在位置处的保护层)与沟道区所在位置处的钝化层的间隔减小或接触设置。由此，通过根据源极、漏极、有源层的电学性质来控制弯曲显示面板的弯曲程度，可控制栅极与有源层的距离，从而可使得包括栅极、有源层、源极、漏极的薄膜晶体管的电学性能达到最佳，从而使显示面板实现最佳显示效果。
例如，上述在第一衬底基板上形成源极、漏极、有源层以形成阵列基板，有源层包括源极区域、漏极区域以及源极区域和漏极区域之间的沟道区的步骤可包括：如图7a所示，在第一衬底基板111上形成源极112、漏极113和公共电极线117。如图7b所示，在第一衬底基板111和公共电极线117上形成公共电极116。如图7c所示，在源极112、漏极113和第一衬底基板111上形成有源层114。如图7d所示，在图7c所示的阵列基板上形成钝化层115。如图7e所示，在钝化层115上形成过孔1150并在钝化层115上形成像素电极118，像素电极118通过过孔1150与漏极113电性相连。
例如，上述在第二衬底基板上形成栅极和保护层以形成对置基板，保护层设置在栅极靠近阵列基板的一侧，栅极与沟道区相对间隔设置，栅极所在位置处的保护层与沟道区所在位置处的阵列基板的靠近对置基板一侧的表面间隔 设置的步骤可包括：如图8a所示，在第二衬底基板121上形成黑矩阵123。如图8b所示，在第二衬底基板121上形成彩色滤光片125。如图8c所示，在黑矩阵123上形成栅极122。如图8d所示，在栅极122上形成保护层124。如图8e所示，在黑矩阵123上形成隔垫物128。
例如，在本实施例一示例提供的显示面板的制作方法中，还可包括：在对盒后的阵列基板和所述对置基板之间注入液晶，所述对盒所述阵列基板和所述对置基板在真空环境下进行注入液晶，从而可提高对盒精度，从而进一步提高该显示面板的制作方法的良率。
实施例三
本实施例提供一种显示装置。该显示装置包括上述的显示面板。由于该显示装置具有上述的显示面板，因此该显示装置具有与其包括的显示面板的技术效果对应的技术效果，本实施例在此不再赘述。
有以下几点需要说明：
(1)本公开实施例附图中，只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或微结构的厚度和尺寸被放大。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(3)在不冲突的情况下，本公开同一实施例及不同实施例中的特征可以相互组合。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。
本申请要求于2016年12月26日递交的中国专利申请第201611220093.4号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (15)

  1. 一种显示面板，包括：
    阵列基板，包括第一衬底基板以及设置在所述第一衬底基板上的源极、漏极、有源层以及设置在所述源极、所述漏极和所述有源层上的钝化层；以及
    对置基板，与所述阵列基板相对间隔设置且包括第二衬底基板，
    其中，所述有源层包括源极区域、漏极区域以及所述源极区域和所述漏极区域之间的沟道区，所述对置基板还包括设置在所述第二衬底基板上的栅极，所述栅极与所述沟道区所在位置处的所述钝化层相对间隔设置。
  2. 根据权利要求1所述的显示面板，其中，所述显示面板被配置为弯曲以使得所述栅极与所述沟道区所在位置处的所述钝化层的间隔减小。
  3. 根据权利要求1或2所述的显示面板，其中，所述对置基板还包括：
    保护层，设置在所述栅极靠近所述阵列基板的一侧，所述栅极所在位置处的保护层与所述沟道区所在位置处的所述钝化层相对间隔设置。
  4. 根据权利要求3所述的显示面板，其中，所述显示面板被配置为弯曲以使得所述栅极所在位置处的所述保护层与所述沟道区所在位置处的所述钝化层接触设置。
  5. 根据权利要求4所述的显示面板，其中，所述栅极所在位置处的所述保护层突出于所述对置基板并形成突起，所述沟道区所在位置处的所述钝化层凹向所述第一衬底基板并形成凹槽，所述突起被配置为在所述显示面板弯曲时插入所述凹槽。
  6. 根据权利要求1-5中任一项所述的显示面板，其中，所述对置基板还包括：
    多个滤光片；以及
    黑矩阵，所述黑矩阵设置在各所述滤光片周边，
    其中，所述栅极在所述第二衬底基板上的正投影落入所述黑矩阵在所述第二衬底基板上的正投影。
  7. 根据权利要求6所述的显示面板，其中，所述多个滤光片呈阵列排布，所述对置基板还包括：
    栅线，沿所述阵列的行方向延伸，所述栅线与所述滤光片交叠。
  8. 根据权利要求1-5中任一项所述的显示面板，其中，所述对置基板还 包括：
    隔垫物，所述隔垫物在所述第二衬底基板上的正投影落入所述黑矩阵在所述第二衬底基板上的正投影。
  9. 一种显示面板的制作方法，包括：
    在第一衬底基板上形成源极、漏极、有源层以及钝化层以形成阵列基板，所述有源层包括源极区域、漏极区域以及所述源极区域和漏极区域之间的沟道区；
    在第二衬底基板上形成栅极以形成对置基板；以及
    将所述阵列基板和所述对置基板对盒，且使所述第一衬底基板的形成有所述源极、漏极、有源层以及钝化层的一侧面对所述第二衬底基板的形成有所述栅极的一侧，
    其中，所述栅极与所述沟道区所在位置处的所述钝化层相对间隔设置。
  10. 根据权利要求9所述的显示面板的制作方法，还包括：
    弯曲所述显示面板以形成曲面显示面板，以使得所述栅极与所述沟道区所在位置处的所述钝化层的间隔减小。
  11. 根据权利要求10所述的显示面板的制作方法，还包括：
    在所述弯曲所述显示面板以形成曲面显示面板之前，在所述栅极远离所述第二衬底基板的一侧形成保护层，
    其中，所述栅极所在位置处的所述保护层与所述沟道区所在位置处的所述钝化层相对间隔设置。
  12. 根据权利要求11所述的显示面板的制作方法，所述弯曲所述显示面板以形成曲面显示面板，以使得所述栅极与所述沟道区所在位置处的所述钝化层的间隔减小具体包括：弯曲所述显示面板以形成曲面显示面板，以使得所述栅极所在位置处的所述保护层与所述沟道区所在位置处的所述钝化层接触设置。
  13. 根据权利要求10所述的显示面板的制作方法，所述弯曲所述显示面板以形成曲面显示面板，以使得所述栅极与所述沟道区所在位置处的所述钝化层的间隔减小包括：
    根据所述源极、所述漏极、所述有源层的电学性质控制弯曲所述显示面板的弯曲程度。
  14. 根据权利要求9或10所述的显示面板的制作方法，其中，所述对盒 所述阵列基板和所述对置基板在真空环境下进行。
  15. 一种显示装置，包括根据权利要求1-8中任一项所述的显示面板。
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