CN105977263A - 阵列基板及其制备方法、显示面板和显示装置 - Google Patents

阵列基板及其制备方法、显示面板和显示装置 Download PDF

Info

Publication number
CN105977263A
CN105977263A CN201610378261.6A CN201610378261A CN105977263A CN 105977263 A CN105977263 A CN 105977263A CN 201610378261 A CN201610378261 A CN 201610378261A CN 105977263 A CN105977263 A CN 105977263A
Authority
CN
China
Prior art keywords
electrode
pixel electrode
array base
base palte
public electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610378261.6A
Other languages
English (en)
Inventor
肖丽
何晓龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201610378261.6A priority Critical patent/CN105977263A/zh
Publication of CN105977263A publication Critical patent/CN105977263A/zh
Priority to US15/556,507 priority patent/US20180166000A1/en
Priority to PCT/CN2017/071415 priority patent/WO2017206523A1/zh
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/04Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions
    • G09G3/06Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions using controlled light sources
    • G09G3/12Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of a single character by selection from a plurality of characters, or by composing the character by combination of individual elements, e.g. segments using a combination of such display devices for composing words, rows or the like, in a frame with fixed character positions using controlled light sources using electroluminescent elements
    • G09G3/14Semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306Circuit arrangements or driving methods for the control of single liquid crystal cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134363Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/136295Materials; Compositions; Manufacture processes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0243Details of the generation of driving signals
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02Details of power systems and of start or stop of display operation
    • G09G2330/028Generation of voltages supplied to electrode drivers in a matrix display other than LCD

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种阵列基板及其制备方法、显示面板和显示装置。该阵列基板包括:衬底基板;设置在所述衬底基板上的栅线和数据线,所述栅线和所述数据线交叉以限定像素区域;设置在所述像素区域内的像素电极和公共电极;所述像素电极和所述公共电极均垂直于所述衬底基板而凸出地设置在所述衬底基板上,由此彼此相对设置;在给所述像素电极和所述公共电极施加电压后,所述像素电极和所述公共电极相对的面之间可以产生平行于所述衬底基板的电场。将该结构的像素电极和公共电极应用于IPS(平面转换)显示模式中,可使平行电场的分布更均匀,可以提高光线的透过率,改善显示面板的响应速度。

Description

阵列基板及其制备方法、显示面板和显示装置
技术领域
本发明的实施例涉及一种阵列基板及其制备方法、显示面板和显示装置。
背景技术
薄膜晶体管液晶显示器(TFT-LCD)是薄膜晶体管(TFT)作为像素单元的开关控制元件的液晶显示装置。液晶的电学特性、光学特性和显示模式都直接影响到液晶显示装置的显示效果。在TFT-LCD领域,常见的液晶显示模式有TN(扭曲向列型)显示模式、IPS(平面转换)显示模式和ADS(高级超维场转换)显示模式等。
IPS显示模式具有可视角度大、动态清晰度高和色彩还原效果好的优点,其在科技含量较高的航天、医疗、设计等领域具有广泛的应用。在IPS显示模式中,两个电极设置在同一个平面内,液晶分子在平面内转动,从而实现亮度的控制。但是,不管在何种状态下,IPS显示模式中都希望液晶分子始终都与显示面板平行,液晶分子排布不均匀会降低开口率,降低透光率,从而减弱亮度。
发明内容
本发明至少一实施例提供一种阵列基板及其制备方法、显示面板和显示装置。该阵列基板中的像素电极和公共电极被制作为相对设置,且垂直于衬底基板并凸出地设置在衬底基板上,将该种结构的像素电极和公共电极应用于IPS显示模式中,可使平行电场的分布更均匀,有利于提高光线的透过率、改善显示面板的响应速度。除此之外,将该结构的像素电极和公共电极应用于显示面板中,还可以至少部分取代设置在阵列基板和对置基板之间的隔垫物(PS),起到支撑对置基板的作用。
本发明至少一个实施例提供一种阵列基板,包括:衬底基板;设置在所述衬底基板上的栅线和数据线,所述栅线和所述数据线交叉以限定像素区域;设置在所述像素区域内的像素电极和公共电极;其中,所述像素电极和所述公共电极均垂直于所述衬底基板而凸出地设置在所述衬底基板上,由此彼此相对设置;在给所述像素电极和所述公共电极施加电压后,所述像素电极和所述公共电极相对的面之间可以产生平行于所述衬底基板的电场。
例如,在本发明一实施例提供的阵列基板中,所述像素电极和所述公共电极的材料均为导电树脂材料。
例如,在本发明一实施例提供的阵列基板中,所述导电树脂材料包括树脂基体和导电掺入物。
例如,在本发明一实施例提供的阵列基板中,所述树脂基体包括环氧树脂、丙烯酸树脂或聚氨酯等。
例如,在本发明一实施例提供的阵列基板中,所述导电掺入物包括金属颗粒或纤维、碳颗粒或纤维、或石墨烯等。
例如,在本发明一实施例提供的阵列基板中,所述阵列基板包括薄膜晶体管,所述薄膜晶体管包括:连接到所述栅线的栅极、有源层、连接到所述数据线并与所述有源层接触的源极、与所述源极相对设置并与所述有源层接触的漏极、位于所述栅极和所述有源层之间的栅绝缘层,并且所述漏极还与所述像素电极电连接。
例如,在本发明一实施例提供的阵列基板中,所述薄膜晶体管上设置有钝化层和贯穿所述钝化层的过孔结构。
例如,在本发明一实施例提供的阵列基板中,所述像素电极通过所述过孔结构与所述漏极电连接。
例如,在本发明一实施例提供的阵列基板中,所述薄膜晶体管可以是底栅型或顶栅型的薄膜晶体管。
例如,在本发明一实施例提供的阵列基板中,所述像素电极和所述公共电极呈长条状,由此彼此相对。
例如,在本发明一实施例提供的阵列基板中,每个所述像素区域包括至少一个所述像素电极或至少一个所述公共电极。
例如,在本发明一实施例提供的阵列基板,还包括公共电极线,所述公共电极与所述公共电极线电连接。
本发明至少一个实施例还提供一种显示面板,包括本发明任一实施例所述的薄膜晶体管阵列基板、与所述衬底基板平行设置的对置基板和设置于所述阵列基板和所述对置基板之间的液晶分子。
例如,在本发明一实施例提供的显示面板中,所述像素电极和所述公共电极在垂直于所述衬底基板上的厚度为所述液晶分子的厚度。
例如,在本发明一实施例提供的显示面板中,所述像素电极和所述公共电极均垂直于所述对置基板且支撑所述对置基板。
例如,在本发明一实施例提供的显示面板中,所述对置基板是彩膜基板。
本发明至少一个实施例还提供一种显示装置,包括本发明任一实施例所述的显示面板。
本发明至少一个实施例还提供一种阵列基板的制备方法,包括:在衬底基板上形成栅线、数据线和由所述栅线和所述数据线交叉限定的像素区域;在所述像素区域内形成像素电极和公共电极;其中,所述像素电极和所述公共电极均垂直于所述衬底基板而凸出地设置在所述衬底基板上,由此彼此相对设置;在给所述像素电极和所述公共电极施加电压后,所述像素电极和所述公共电极相对的面之间可以产生平行于所述衬底基板的电场。
例如,在本发明一实施例提供的制备方法中,所述像素电极和所述公共电极的材料均为导电树脂材料。
例如,在本发明一实施例提供的制备方法中,所述导电树脂材料包括树脂基体和导电掺入物。
例如,在本发明一实施例提供的制备方法中,所述树脂基体包括环氧树脂、丙烯酸树脂或聚氨酯等。
例如,在本发明一实施例提供的制备方法中,所述导电掺入物包括金属颗粒或纤维、碳颗粒或纤维、或石墨烯等。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。
图1为本发明一实施例提供的一种阵列基板的结构示意图;
图2为图1中阵列基板沿A-B线的剖视截面图;
图3为本发明一实施例提供的顶栅型薄膜晶体管的截面结构示意图;
图4为本发明一实施例提供的显示面板的结构示意图;
图5为本发明一实施例提供的一种阵列基板的制作方法流程示意图。
附图标记:
100-阵列基板;101-衬底基板;102-栅线;103-数据线;104-像素区域;105-薄膜晶体管;106-像素电极;107-公共电极;108-栅极;109-有源层;110-源极;111-漏极;112-栅绝缘层;113-公共电极线;114-过孔结构;115-钝化层;116-平坦层;117-对置基板;118-液晶分子;200-显示面板。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
除非另外定义,本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。
通常在IPS模式的液晶面板中,像素电极和公共电极用透明导电材料或金属材料制作。如果采用透明导电材料或金属材料制作上述电极,则一般采用沉积薄膜的方式。采用沉积薄膜的方式形成的电极的厚度比较薄,则施加了电压信号之后在像素电极和公共电极的上表面之间会形成弧状的电场线,液晶分子会随着该弧状电场线排布,由此导致液晶面板的光线的透过率降低。即使使用多次沉积的方式来加厚(高)像素电极和公共电极,也会因为多层导电层之间粘结力弱而带来透明导电层或金属层易剥落的问题,且工序繁琐,成本高。
在研究中,本公开的发明人注意到,如果采用具有一定硬度的导电树脂材料制作像素电极和公共电极,则可以让两电极均垂直于衬底基板而凸出地设置在衬底基板上,且该像素电极和公共电极彼此相对设置,由此在施加了电压信号之后可在像素电极和公共电极相对的面之间产生平行于衬底基板的水平电场,使液晶分子可以均匀的排布,从而可以提高液晶分子切换的速度由此改善液晶面板的显示响应速度,还可以提升液晶面板的光线的透过率和改善显示效果。
本发明至少一实施例提供一种阵列基板及其制备方法、显示面板和显示装置。该阵列基板包括:衬底基板;设置在衬底基板上的栅线和数据线,该栅线和数据线交叉以限定像素区域;设置在像素区域内的像素电极和公共电极;其中,像素电极和公共电极均垂直于衬底基板而凸出地设置在衬底基板上,由此彼此相对设置;在给像素电极和公共电极施加电压后,像素电极和公共电极相对的面之间可以产生平行于衬底基板的电场。
将该种结构的像素电极和公共电极应用于IPS显示模式中,可使二者在通电后产生的平行电场的分布更均匀,有利于增加液晶切换速度、提高光线的透过率和改善显示面板的响应速度。除此之外,将该结构的像素电极和公共电极应用于显示面板中,还可以至少部分取代设置在阵列基板和对置基板之间的隔垫物(PS),起到支撑对置基板的作用,从而改善了液晶面板的抗压性能。
下面通过几个实施例进行说明。
实施例一
本实施例提供一种阵列基板,该阵列基板上的开关元件可以是薄膜晶体管或其他开关元件。例如,该阵列基板可为薄膜晶体管阵列基板,以下均以薄膜晶体管阵列基板为例加以说明。
例如,图1为本发明一实施例提供的一种薄膜晶体管阵列基板的结构示意图,图2为图1中薄膜晶体管阵列基板沿A-B线的剖视截面图。参见图1和图2,该阵列基板100包括:衬底基板101;设置在衬底基板101上的栅线102和数据线103,栅线102和数据线103交叉以限定像素区域104;设置在像素区域104内的薄膜晶体管105、像素电极106和公共电极107;其中,像素电极106和公共电极107均垂直于衬底基板101而凸出地设置在衬底基板101上,由此彼此相对设置,在给像素电极106和公共电极107施加电压后,像素电极106和公共电极107相对的面之间可以产生平行于衬底基板101的电场,而不会在像素电极和公共电极的顶部形成弧状的电场线。
例如,像素电极106和公共电极107均可以被制作得很厚(高),且相对设置,由此二者彼此正对的部分限定了容纳液晶的空间,且由此二者在被施加了电信号(通电)后在该空间中形成均匀的水平电场,该水平电场线垂直于像素电极106和公共电极107相对的面。该电场作用在二者之间容纳的液晶上以控制液晶分子的排布。这里,“凸出地设置”是指沿垂直于衬底基板101的方向延伸,像素电极106和公共电极107的厚度(高度)和其间的液晶层的厚度(高度)一致。液晶分子可以沿像素电极106和公共电极107之间的平行电场线均匀地排布。
例如,衬底基板101是透明绝缘基板,其材料可以是玻璃、石英或其他适合的材料。
例如,如图1所示,两条栅线102和两条数据线103交叉设置限定像素区域104。图1中只示出了两条栅线102和两条数据线103,可以在衬底基板101上设置多条栅线102和多条数据线103。可用于栅线102和数据线103的材料包括铜、铜合金、铝、铝合金、钼、钼合金或其他适合的材料。栅线102包括从其上分叉的多个栅极108,栅信号通过栅线102被施加到栅极108上。
例如,如图1所示,公共电极线113被设置在衬底基板101上,其基本平行于栅线102。图1中只示出了一条公共电极线113,可以在衬底基板101上设置多条公共电极线113。可用于公共电极线113的材料包括铜、铜合金、铝、铝合金、钼、钼合金、导电树脂或其他适合的材料。例如,公共电极线可以与栅线同层设置或不同层设置。
例如,如图1所示,薄膜晶体管105包括:连接到栅线102的栅极108、有源层109、连接到数据线103并与有源层109接触的源极110、与源极110相对设置并与有源层109接触的漏极111、位于栅极108和有源层109之间的栅绝缘层112,并且漏极111还与像素电极106电连接。
例如,如图2所示,栅绝缘层112覆盖栅线102、栅极108、公共电极线113和公共电极107。栅绝缘层112的材料包括氧化硅、氮化硅。
例如,有源层109设置在栅绝缘层112上,与栅极108相对应,用于有源层109的材料包括非晶硅、金属氧化物半导体、有机物半导体等。
例如,用于源极110和漏极111的材料可以为铜、铜合金、铝、铝合金、钼、钼合金或其他适合的材料。
例如,钝化层115覆盖数据线103、有源层109、源极110和漏极111。钝化层115包括暴露一部分漏极111的过孔结构114。用于钝化层115的材料包括氧化硅、氮化硅或其他适合的材料。
例如,在钝化层115上还可以设置有平坦层116,平坦层116的厚度较厚。除了在过孔结构114处平坦层116会不平整外,平坦层表面的其他部分都是平整的。例如,平坦层116的材料可以是氧化硅、氮化硅等无机材料或环氧树脂、丙烯酸树脂、聚氨酯等有机材料。
例如,如图2所示,像素电极106设置在平坦层116上,其通过过孔结构114与漏极111电连接,由此数据信号(电压)可以通过数据线和薄膜晶体管施加到该像素电极106上。用于像素电极106的材料为导电树脂材料。虽然图1中只示出了一个像素区域中的三条长条状结构的像素电极106,但是该阵列基板还可以包括更多的像素区域,以及每个像素区域还可以包括更多的长条状结构的像素电极106。
例如,公共电极107设置在平坦层116上,其通过过孔结构(图中未示出)与公共电极线113电连接。公共电压通过公共电极线113施加到公共电极107。用于公共电极107的材料为导电树脂材料,虽然图1中只示出了一个像素区域中的三条长条状结构的公共电极107,但是每个像素区域还可以包括更多长条状结构的公共电极107。
像素电极106和公共电极107均呈长条状,由此像素电极106和公共电极107彼此相对,从而可以在它们之间形成均匀的水平电场。
例如,每个像素区域104包括至少一个像素电极106或至少一个公共电极107。例如,每个像素电极106均与公共电极107相邻设置,每个公共电极107均与像素电极106相邻设置。
例如,导电树脂材料包括树脂基体和导电掺入物,导电颗粒掺入树脂基体中后对所述树脂基体进行了改性,使整个树脂基体具有了导电性。
例如,树脂基体包括环氧树脂、丙烯酸树脂或聚氨酯。例如,该树脂基体还可以包括酚醛树脂、醇酸树脂、合成脂肪酸树脂等。
例如,导电掺入物包括金属颗粒或纤维、碳颗粒或纤维、或石墨烯。例如,金属颗粒或纤维包括银纳米颗粒或纤维、镍纳米颗粒或纤维等;碳颗粒包括空心碳颗粒、实心碳球、核壳结构碳球和胶状碳球,碳纤维包括丙烯腈基碳纤维、沥青基碳纤维。例如,导电掺入物还可以包括由石墨烯片层卷成的无缝、中空的导电性的碳纳米管,包括单壁碳纳米管、双壁碳纳米管和多壁碳纳米管。
例如,该导电树脂材料可以具有一定的硬度,如图2所示,可以满足像素电极106和公共电极107被制造成具有比较大的厚度(高度)的要求,即可以满足像素电极106和公共电极107垂直于衬底基板101而凸出地设置在衬底基板101上,并且在二者相对的面之间可以产生平行于衬底基板101的电场。该树脂基体同时具有很好的透光性,所以不会降低开口率。
例如,薄膜晶体管105可以是底栅型或顶栅型的薄膜晶体管。图1和图2是以底栅型结构的薄膜晶体管为例加以说明的。例如,图3为本发明一实施例提供的顶栅型薄膜晶体管的截面结构示意图。栅极108设置在有源层109、源极110、漏极111的上方,栅绝缘层112设置在栅极108的下方,从而隔绝栅极108和有源层109。其他的结构设置、各层的材料均和上述底栅型薄膜晶体管中描述的内容一致,在此不再赘述。
实施例二
本实施例提供一种显示面板,例如,图4为本发明一实施例提供的显示面板的结构示意图。例如,如图4所示,该显示面板200包括上述任一实施例中的薄膜晶体管阵列基板100、与衬底基板101平行设置的对置基板117和设置于阵列基板100和对置基板之间117的液晶分子118。
例如,如图4所示,该像素电极和公共电极在垂直于衬底基板101方向上的厚度(高度)为液晶分子118的厚度(高度),此处像素电极和公共电极在垂直于衬底基板101方向上的厚度(高度)为平坦层116至对置基板117的与衬底基板相对一侧的高度,需要说明的是,像素电极和公共电极在垂直于衬底基板101方向上的厚度(高度)也并非严格意义上的液晶分子118的厚度(高度)。
例如,如图4所示,像素电极106和公共电极107均垂直于对置基板117且支撑对置基板117。将该种结构的像素电极106和公共电极107应用于IPS显示模式中,对像素电极106和公共电极107施加电压后后,可以使在像素电极106和公共电极107之间形成的平行电场的分布更均匀,使液晶分子118在两个电极之间沿着电场线的方向均匀地排布,从而可提高光线的透过率。该像素电极106和公共电极107不仅具有导电的作用,同时,还可以至少部分取代设置在阵列基板101和对置基板117之间的隔垫物(PS),起到支撑对置基板117的作用,这样可以节省工艺步骤。
例如,该对置基板117是彩膜基板。像素电极106和公共电极107均垂直于衬底基板且支撑着彩膜基板,可以至少部分取代设置在阵列基板101和彩膜基板之间的隔垫物(PS),简化了工艺步骤。
实施例三
本实施例提供一种显示装置,包括实施例二中的显示面板200。
例如,该显示装置可以为液晶显示器、电子纸、OLED(OrganicLight-Emitting Diode,有机发光二极管)显示器等显示器件以及包括这些显示器件的电视、数码相机、手机、手表、平板电脑、笔记本电脑、导航仪等任何具有显示功能的产品或者部件。
实施例四
本实施例提供一种阵列基板的制备方法,例如,图5为本发明一实施例提供的一种阵列基板的制作方法流程示意图。该方法包括:在衬底基板上形成栅线、数据线和由栅线和数据线交叉限定的像素区域;在像素区域内形成像素电极和公共电极;其中,像素电极和公共电极均垂直于衬底基板而凸出地设置在衬底基板上,由此彼此相对设置;在给像素电极和公共电极施加电压后,像素电极和公共电极相对的面之间可以产生平行于衬底基板的电场。
例如,像素电极和公共电极均被制作得很厚(高),且相对设置。这里,“凸出地设置”是指沿垂直于衬底基板的方向,像素电极和公共电极的厚度(高度)和待封装的液晶层的厚度(高度)一致。液晶分子可以沿像素电极和公共电极之间的平行电场线均匀地排布。
例如,像素电极和公共电极的材料均为导电树脂材料。该导电树脂材料包括树脂基体和导电掺入物。
例如,可以通过光刻的方法在衬底基板上制备凸出地设置的像素电极和公共电极。例如,以薄膜晶体管阵列基板的制备方法为例加以说明。首先,在制备了包括薄膜晶体管、栅线、数据线等驱动电路以及钝化层等结构的衬底基板上形成(例如涂覆)导电树脂材料层;然后,在该导电树脂材料层上形成光刻胶层,将该光刻胶层曝光、显影得到光刻胶图案;接下来,使用该光刻胶图案对导电树脂材料层刻蚀以得到像素电极和公共电极;最后,去除剩余的光刻胶图案。或者,如果导电树脂材料本身具有感光性能,则可以直接通过对形成的导电树脂材料层曝光、显影得到像素电极和公共电极。
衬底基板上的薄膜晶体管、栅线、数据线等驱动电路以及钝化层等结构可以通过通常的方法制备得到。
例如,该树脂基体包括环氧树脂、丙烯酸树脂或聚氨酯。例如,该树脂基体还可以包括酚醛树脂、醇酸树脂、合成脂肪酸树脂等。
例如,导电掺入物包括金属颗粒或纤维、碳颗粒或纤维、或石墨烯。例如,金属颗粒或纤维包括银纳米颗粒或纤维、镍纳米颗粒或纤维等;碳颗粒包括空心碳颗粒、实心碳球、核壳结构碳球和胶状碳球,碳纤维包括丙烯腈碳纤维、沥青碳纤维。例如,导电掺入物还可以包括由石墨烯片层卷成的无缝、中空的碳纳米管,包括单壁碳纳米管、双壁碳纳米管和多壁碳纳米管。
例如,该导电树脂材料具有一定的硬度,可以满足制备成具有比较大厚度(高度)的要求,即可以满足垂直于衬底基板101而凸出地设置在衬底基板101上,该树脂基体同时具有很好的透光性,所以不会降低开口率。
本发明的实施例提供一种薄膜晶体管阵列基板及其制备方法、显示面板和显示装置,具有以下至少一项有益效果:
(1)将该结构的像素电极和公共电极应用于IPS显示模式中,可在通电后形成均匀的平行电场,使液晶分子的排布更均匀,从而可提高光线的透过率;
(2)通电后形成的均匀的平行电场可以提高液晶分子切换的速度,由此改善液晶面板的显示响应速度;
(3)将该结构的像素电极和公共电极应用于显示面板中,可以至少部分取代设置在阵列基板和对置基板之间的隔垫物(PS),起到支撑对置基板的作用。
有以下几点需要说明:
(1)本发明实施例附图只涉及到与本发明实施例涉及到的结构,其他结构可参考通常设计。
(2)为了清晰起见,在用于描述本发明的实施例的附图中,层或区域的厚度被放大或缩小,即这些附图并非按照实际的比例绘制。可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”,或者可以存在中间元件。
(3)在不冲突的情况下,本发明的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,本发明的保护范围应以所述权利要求的保护范围为准。

Claims (22)

1.一种阵列基板,包括:
衬底基板;
设置在所述衬底基板上的栅线和数据线,所述栅线和所述数据线交叉以限定像素区域;
设置在所述像素区域内的像素电极和公共电极;
其中,所述像素电极和所述公共电极均垂直于所述衬底基板而凸出地设置在所述衬底基板上,由此彼此相对设置;在给所述像素电极和所述公共电极施加电压后,所述像素电极和所述公共电极相对的面之间可以产生平行于所述衬底基板的电场。
2.根据权利要求1所述的阵列基板,其中,所述像素电极和所述公共电极的材料均为导电树脂材料。
3.根据权利要求2所述的阵列基板,其中,所述导电树脂材料包括树脂基体和导电掺入物。
4.根据权利要求3所述的阵列基板,其中,所述树脂基体包括环氧树脂、丙烯酸树脂或聚氨酯。
5.根据权利要求3所述的阵列基板,其中,所述导电掺入物包括金属颗粒或纤维、碳颗粒或纤维、或石墨烯。
6.根据权利要求1所述的阵列基板,其中,所述阵列基板包括薄膜晶体管,所述薄膜晶体管包括:连接到所述栅线的栅极、有源层、连接到所述数据线并与所述有源层接触的源极、与所述源极相对设置并与所述有源层接触的漏极、位于所述栅极和所述有源层之间的栅绝缘层,并且所述漏极还与所述像素电极电连接。
7.根据权利要求6所述的阵列基板,其中,所述薄膜晶体管上设置有钝化层和贯穿所述钝化层的过孔结构。
8.根据权利要求7所述的阵列基板,其中,所述像素电极通过所述过孔结构与所述漏极电连接。
9.根据权利要求6所述的阵列基板,其中,所述薄膜晶体管可以是底栅型或顶栅型的薄膜晶体管。
10.根据权利要求1-9中任一项所述的阵列基板,其中,所述像素电极和所述公共电极呈长条状,由此彼此相对。
11.根据权利要求10所述的阵列基板,其中,每个所述像素区域包括至少一个所述像素电极或至少一个所述公共电极。
12.根据权利要求11所述的阵列基板,还包括公共电极线,所述公共电极与所述公共电极线电连接。
13.一种显示面板,包括权利要求1-12中任一项所述的阵列基板、与所述衬底基板平行设置的对置基板和设置于所述阵列基板和所述对置基板之间的液晶分子。
14.根据权利要求13所述的显示面板,其中,所述像素电极和所述公共电极在垂直于所述衬底基板方向上的厚度为所述液晶分子的厚度。
15.根据权利要求13所述的显示面板,其中,所述像素电极和所述公共电极均垂直于所述对置基板且支撑所述对置基板。
16.根据权利要求15所述的显示面板,其中,所述对置基板是彩膜基板。
17.一种显示装置,包括权利要求13-16中任一项所述的显示面板。
18.一种阵列基板的制备方法,包括:
在衬底基板上形成栅线、数据线和由所述栅线和所述数据线交叉限定的像素区域;
在所述像素区域内形成像素电极和公共电极;
其中,所述像素电极和所述公共电极均垂直于所述衬底基板而凸出地设置在所述衬底基板上,由此彼此相对设置;在给所述像素电极和所述公共电极施加电压后,所述像素电极和所述公共电极相对的面之间可以产生平行于所述衬底基板的电场。
19.根据权利要求18所述的制备方法,其中,所述像素电极和所述公共电极的材料均为导电树脂材料。
20.根据权利要求19所述的制备方法,其中,所述导电树脂材料包括树脂基体和导电掺入物。
21.根据权利要求20所述的制备方法,其中,所述树脂基体包括环氧树脂、丙烯酸树脂或聚氨酯。
22.根据权利要求21所述的制备方法,其中,所述导电掺入物包括金属颗粒或纤维、碳颗粒或纤维、或石墨烯。
CN201610378261.6A 2016-05-31 2016-05-31 阵列基板及其制备方法、显示面板和显示装置 Pending CN105977263A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201610378261.6A CN105977263A (zh) 2016-05-31 2016-05-31 阵列基板及其制备方法、显示面板和显示装置
US15/556,507 US20180166000A1 (en) 2016-05-31 2017-01-17 Array substrate and manufacturing method thereof, display panel and display device
PCT/CN2017/071415 WO2017206523A1 (zh) 2016-05-31 2017-01-17 阵列基板及其制备方法、显示面板和显示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610378261.6A CN105977263A (zh) 2016-05-31 2016-05-31 阵列基板及其制备方法、显示面板和显示装置

Publications (1)

Publication Number Publication Date
CN105977263A true CN105977263A (zh) 2016-09-28

Family

ID=57010036

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610378261.6A Pending CN105977263A (zh) 2016-05-31 2016-05-31 阵列基板及其制备方法、显示面板和显示装置

Country Status (3)

Country Link
US (1) US20180166000A1 (zh)
CN (1) CN105977263A (zh)
WO (1) WO2017206523A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017206523A1 (zh) * 2016-05-31 2017-12-07 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板和显示装置
WO2018120695A1 (zh) * 2016-12-26 2018-07-05 京东方科技集团股份有限公司 显示面板及其制作方法以及显示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107515495A (zh) * 2017-09-19 2017-12-26 惠科股份有限公司 平面显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101995700A (zh) * 2009-08-10 2011-03-30 北京京东方光电科技有限公司 液晶面板及其制造方法
US20110141421A1 (en) * 2009-12-11 2011-06-16 Sang-Wook Lee Liquid crystal display device
CN102879958A (zh) * 2012-09-28 2013-01-16 京东方科技集团股份有限公司 一种阵列基板及其制造方法、液晶显示装置
CN104765207A (zh) * 2015-01-20 2015-07-08 深圳市华星光电技术有限公司 像素结构及具有该像素结构的液晶显示器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5716551A (en) * 1996-02-09 1998-02-10 Tech Spray, Inc. Static dissipative composition and process for static disspative coatings
US20120062451A1 (en) * 2009-05-13 2012-03-15 Katsuhiko Morishita Liquid crystal display device
US8713420B2 (en) * 2011-06-30 2014-04-29 Cable Television Laboratories, Inc. Synchronization of web applications and media
CN103268178B (zh) * 2012-12-31 2017-06-16 上海天马微电子有限公司 水平电场驱动模式的阵列基板及触摸屏
CN105278181B (zh) * 2015-11-05 2018-09-11 武汉华星光电技术有限公司 响应时间短的液晶面板及显示装置
TWI563332B (en) * 2016-03-02 2016-12-21 Au Optronics Corp Liquid crystal display panel
CN105977263A (zh) * 2016-05-31 2016-09-28 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板和显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101995700A (zh) * 2009-08-10 2011-03-30 北京京东方光电科技有限公司 液晶面板及其制造方法
US20110141421A1 (en) * 2009-12-11 2011-06-16 Sang-Wook Lee Liquid crystal display device
CN102879958A (zh) * 2012-09-28 2013-01-16 京东方科技集团股份有限公司 一种阵列基板及其制造方法、液晶显示装置
CN104765207A (zh) * 2015-01-20 2015-07-08 深圳市华星光电技术有限公司 像素结构及具有该像素结构的液晶显示器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017206523A1 (zh) * 2016-05-31 2017-12-07 京东方科技集团股份有限公司 阵列基板及其制备方法、显示面板和显示装置
WO2018120695A1 (zh) * 2016-12-26 2018-07-05 京东方科技集团股份有限公司 显示面板及其制作方法以及显示装置
US10551709B2 (en) 2016-12-26 2020-02-04 Boe Technology Group Co., Ltd. Display panel having an opposing substrate provided with a gate electrode, manufacturing method thereof, and display device

Also Published As

Publication number Publication date
US20180166000A1 (en) 2018-06-14
WO2017206523A1 (zh) 2017-12-07

Similar Documents

Publication Publication Date Title
CN102881688B (zh) 一种阵列基板、显示面板及阵列基板的制造方法
TWI363911B (en) Liquid crystal display
CN104914640A (zh) 一种阵列基板及其制作方法、显示面板、显示装置
EP3358613A1 (en) Array substrate and manufacturing method therefor, and display device
CN104765502B (zh) 一种触控显示面板及其制备方法、控制方法
CN108474985A (zh) 液晶显示面板及其制造方法
KR101146444B1 (ko) 프린지 필드 스위칭 모드 액정표시장치 제조방법
US8730560B2 (en) Electrophoretic display device
CN104280951A (zh) 阵列基板及其制造方法、显示装置
CN102455556B (zh) 液晶显示器件及其制造方法
CN104423107A (zh) 液晶显示装置及其制造方法
CN105093750A (zh) Tft阵列基板结构及其制作方法
CN105097832B (zh) 一种阵列基板及其制作方法、显示装置
CN103838048B (zh) 一种阵列基板及其制作方法、显示装置
CN103885221B (zh) 大板加电线路及其制造方法
CN103278971A (zh) 薄膜晶体管阵列基板及其制造方法
CN103345092A (zh) 阵列基板及其制作方法、显示装置
US20130148067A1 (en) Array substrate, liquid crystal panel and liquid crystal display device
CN105977263A (zh) 阵列基板及其制备方法、显示面板和显示装置
US20090256158A1 (en) Array substrate of liquid crystal display device and method of manufacturing the same
TW201727325A (zh) 陣列基板及顯示裝置
CN109541860A (zh) 一种显示面板及其制备方法和显示装置
CN101666949A (zh) Ips型tft-lcd阵列基板及其制造方法
US9147697B2 (en) Manufacturing method of array substrate, array substrate, and display apparatus
CN203277383U (zh) 一种阵列基板及显示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20160928