JP4997750B2 - カーボンナノチューブを用いた電子素子及びその製造方法 - Google Patents
カーボンナノチューブを用いた電子素子及びその製造方法 Download PDFInfo
- Publication number
- JP4997750B2 JP4997750B2 JP2005357969A JP2005357969A JP4997750B2 JP 4997750 B2 JP4997750 B2 JP 4997750B2 JP 2005357969 A JP2005357969 A JP 2005357969A JP 2005357969 A JP2005357969 A JP 2005357969A JP 4997750 B2 JP4997750 B2 JP 4997750B2
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- JP
- Japan
- Prior art keywords
- carbon nanotube
- fine particles
- carbon nanotubes
- deposited
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 171
- 239000002041 carbon nanotube Substances 0.000 title claims description 171
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims description 171
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title description 20
- 239000010419 fine particle Substances 0.000 claims description 102
- 239000010408 film Substances 0.000 claims description 46
- 238000000151 deposition Methods 0.000 claims description 39
- 239000010409 thin film Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 36
- 238000002161 passivation Methods 0.000 claims description 21
- 238000009826 distribution Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 description 21
- 239000012159 carrier gas Substances 0.000 description 11
- 239000003054 catalyst Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004050 hot filament vapor deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000002238 carbon nanotube film Substances 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- -1 for example Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
Description
1a 酸化膜
1b FET形成領域
2 カーボンナノチューブ
3 電極
4 微粒子
4a 飛行方向
5 微粒子層
6 パッシベーション膜
7 ゲート電極
8 触媒粒子
8a 触媒薄膜
10 堆積室
11 保持台
11a 移動方向
12 ノズル
13 排気管
20 微分型静電分級器
21 熱処理炉
22 管
23 レーザ光源
23a レーザ光
24 ターゲット
30 微粒子発生室
31 キャリアガス
41 電場印加用電極
Claims (4)
- 直径が100nm以下のカーボンナノチューブと、
前記カーボンナノチューブの表面上に堆積された平均直径が50nm以下の微粒子からなる微粒子層と、
前記微粒子層上に堆積された薄膜とを有することを特徴とするカーボンナノチューブを用いた電子素子。 - 前記微粒子は、直径分布の幾何標準偏差が2.0以下の微粒子からなることを特徴とする請求項1のカーボンナノチューブを用いた電子素子。
- 前記薄膜は、前記カーボンナノチューブのパッシベーション膜又は前記カーボンナノチューブに接触する電極を含む
ことを特徴とする請求項1又は2に記載のカーボンナノチューブを用いた電子素子。 - 基板上に直径が100nm以下のカーボンナノチューブを配置する工程と、
平均直径が50nm以下の微粒子を生成する工程と、
生成された前記微粒子を分級する工程と、
前記カーボンナノチューブの表面に分級された前記微粒子を堆積する工程と、
前記微粒子が堆積したカーボンナノチューブ上に、薄膜を堆積する工程とを有するカーボンナノチューブを用いた電子素子の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005357969A JP4997750B2 (ja) | 2005-12-12 | 2005-12-12 | カーボンナノチューブを用いた電子素子及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005357969A JP4997750B2 (ja) | 2005-12-12 | 2005-12-12 | カーボンナノチューブを用いた電子素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007165473A JP2007165473A (ja) | 2007-06-28 |
JP4997750B2 true JP4997750B2 (ja) | 2012-08-08 |
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JP2005357969A Expired - Fee Related JP4997750B2 (ja) | 2005-12-12 | 2005-12-12 | カーボンナノチューブを用いた電子素子及びその製造方法 |
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JP (1) | JP4997750B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI123691B (fi) * | 2007-12-10 | 2013-09-30 | Beneq Oy | Menetelmä erittäin hydrofobisen pinnan tuottamiseksi |
CN101582381B (zh) * | 2008-05-14 | 2011-01-26 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管及其阵列的制备方法 |
CN104934330A (zh) * | 2015-05-08 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
CN116133495B (zh) * | 2023-01-12 | 2023-10-31 | 湖南元芯传感科技有限责任公司 | 一种碳基传感芯片的制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2364933B (en) * | 2000-07-18 | 2002-12-31 | Lg Electronics Inc | Method of horizontally growing carbon nanotubes |
JP2003017508A (ja) * | 2001-07-05 | 2003-01-17 | Nec Corp | 電界効果トランジスタ |
JP4891550B2 (ja) * | 2005-02-10 | 2012-03-07 | 独立行政法人科学技術振興機構 | n型トランジスタ、n型トランジスタセンサ及びn型トランジスタ用チャネルの製造方法 |
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- 2005-12-12 JP JP2005357969A patent/JP4997750B2/ja not_active Expired - Fee Related
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