CN107579006B - 一种薄膜晶体管、阵列基板及其制备方法 - Google Patents

一种薄膜晶体管、阵列基板及其制备方法 Download PDF

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CN107579006B
CN107579006B CN201710821855.4A CN201710821855A CN107579006B CN 107579006 B CN107579006 B CN 107579006B CN 201710821855 A CN201710821855 A CN 201710821855A CN 107579006 B CN107579006 B CN 107579006B
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layer
active layer
patterned
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underlay substrate
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CN107579006A (zh
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王庆贺
丁录科
程磊磊
鲍俊
苏同上
王东方
袁广才
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Hefei Xinsheng Optoelectronics Technology Co Ltd
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Abstract

本申请提供一种薄膜晶体管、阵列基板及其制备方法，以改善薄膜晶体管由于有源层易受水氧影响而导致稳定性较差的问题。本申请实施例提供一种薄膜晶体管的制作方法，包括：在衬底基板之上依次形成栅极、栅极绝缘层以及有源层；在所述有源层之上形成图案化的疏水层，其中，所述疏水层包括第一图案部，所述第一图案部在所述衬底基板上的正投影与所述有源层的沟道区在所述衬底基板上的正投影重叠；在所述疏水层之上形成源极和漏极，所述源极和所述漏极分别位于所述沟道区的两侧，与所述有源层接触。

Description

一种薄膜晶体管、阵列基板及其制备方法
技术领域
本申请涉及半导体技术领域，尤其涉及一种薄膜晶体管、阵列基板及其制备方法。
背景技术
平面显示器(F1at Pane1 Disp1ay，FPD)己成为市场上的主流产品，平面显示器的种类也越来越多，如液晶显示器(Liquid Crysta1 Disp1ay，LCD)、有机发光二极管(Organic Light Emitted Diode，OLED)显示器、等离子体显示面板(P1asma Disp1ayPane1，PDP)及场发射显示器(Field Emission Display，FED)等。
而作为FPD产业核心技术的薄膜晶体管(Thin Film Transistor，TFT)背板技术，也在经历着深刻的变革。但是，由于薄膜晶体管的有源层一般为半导体，容易受环境中水氧的影响，进而导致薄膜晶体管在实际驱动显示器件的过程中，容易出现不稳定的现象，进而导致显示器件出现显示不良的问题。
发明内容
本申请提供一种薄膜晶体管、阵列基板及其制备方法，以解决现有技术中的薄膜晶体管由于有源层受水氧影响而导致稳定性较差的问题。
本申请实施例提供一种薄膜晶体管的制作方法，包括：
在衬底基板之上依次形成栅极、栅极绝缘层以及有源层；
在所述有源层之上形成图案化的疏水层，其中，所述疏水层包括第一图案部，所述第一图案部在所述衬底基板上的正投影与所述有源层的沟道区在所述衬底基板上的正投影重叠；
在所述疏水层之上形成源极和漏极，所述源极和所述漏极分别位于所述沟道区的两侧，与所述有源层接触。
优选的，所述疏水层还包括第二图案部，所述第二图案部在所述衬底基板上的正投影与所述有源层的第一区域在所述衬底基板上的正投影重叠，其中，所述第一区域为位于所述沟道区两侧除用于设置所述源极和所述漏极以外的其它区域。
优选的，所述在所述有源层之上形成图案化的疏水层，具体包括：
在所述有源层之上形成具有第一预设厚度的图案化的光刻胶层，其中，所述光刻胶层的图案与所述疏水层的图案相互补；
在图案化的所述光刻胶层之上形成具有第二预设厚度的疏水薄膜，所述第二预设厚度小于所述第一预设厚度；
通过光刻胶剥离液剥离图案化的所述光刻胶层，同时去除所述光刻胶层之上与所述光刻胶层相接触的所述疏水薄膜，形成图案化的所述疏水层。
优选的，所述在所述有源层之上形成图案化的疏水层，具体包括：
在所述有源层之上形成图案化的全氟聚合物疏水层。
优选的，所述在衬底基板之上依次形成栅极、栅极绝缘层以及有源层，具体包括：
在衬底基板之上形成铝/钼金属薄膜，并图案化形成栅极；
在所述栅极之上形成二氧化硅薄膜，并刻蚀形成栅极绝缘层；
在所述栅极绝缘层之上形成铟镓锌氧化物薄膜，并形成图案化的有源层；
所述在所述疏水层之上形成源极和漏极，具体包括：在所述疏水层之上形成钼/铝/钼金属薄膜，并图案化形成源极和漏极。
优选的，所述在所述有源层之上形成图案化的疏水层，具体包括：
在所述有源层之上形成图案化的六甲基硅烷疏水层。
优选的，所述在衬底基板之上依次形成栅极、栅极绝缘层以及有源层，具体包括：
在衬底基板之上形成石墨烯薄膜，并图案化形成栅极；
在所述栅极之上形成聚乙烯吡咯烷酮薄膜，并刻蚀形成栅极绝缘层；
在所述栅极绝缘层之上形成并五苯薄膜，并图案化形成有源层；
所述在图案化的疏水层之上形成源极和漏极，具体包括：在图案化的所述疏水层之上形成石墨烯薄膜，并图案化形成源极和漏极。
本申请实施例还提供一种采用本申请实施例提供的所述制作方法制作的薄膜晶体管，所述薄膜晶体管包括：
依次设置在衬底基板之上的栅极、栅极绝缘层以及有源层；
设置在所述有源层之上图案化的疏水层，其中，所述疏水层包括第一图案部，所述第一图案部在所述衬底基板上的正投影与所述有源层的沟道区在所述衬底基板上的正投影重叠；
设置在所述疏水层之上的源极和漏极，所述源极和所述漏极分别位于所述沟道区的两侧，与所述有源层接触。
优选的，所述疏水层的材质为全氟聚合物或六甲基硅烷。
本申请实施例还提供一种阵列基板，包括本申请实施例提供的所述薄膜晶体管。
本申请实施例有益效果如下：本申请实施例在形成有源层之后，在有源层之上形成图案化的疏水层，由于疏水层的疏水性，进而可以阻挡环境中的水氧对有源层的影响，使有源层沟道区可以形成更加稳定的界面，进而可以提高薄膜晶体管的稳定性；同时，在有源层之上形成的图案化的疏水层，还可以在后续通过刻蚀方式形成源极和漏极时，避免刻蚀液与有源层的接触，防止有源层受到损伤，起到保护有源层的作用，进一步提供薄膜晶体管的稳定性。
附图说明
图1为本申请实施例提供的薄膜晶体管的制备方法的流程图；
图2为本申请实施例中，制备完成栅极、栅极绝缘层以及有源层的薄膜晶体管的结构示意图；
图3为本申请实施例中，制备完成图案化的光刻胶层的薄膜晶体管的结构示意图；
图4为本申请实施例中，制备完成疏水层薄膜的薄膜晶体管的结构示意图；
图5为本申请实施例中，去除光刻胶层的薄膜晶体管的结构示意图；
图6为本申请实施例中，制备完成源漏极的薄膜晶体管的结构示意图。
具体实施方式
下面结合说明书附图对本申请实施例的实现过程进行详细说明。需要注意的是，自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。
参见图1，本申请实施例提供一种薄膜晶体管的制作方法，包括：
步骤101、在衬底基板之上依次形成栅极、栅极绝缘层以及有源层。
根据薄膜晶体管的具体应用的不同，可以以玻璃基板作为衬底基板，也可以以具有水氧阻隔层的柔性基板作为衬底基板，具体的，可以以聚萘二甲酸乙二醇酯、聚对苯二甲酸乙二酯或者聚酰亚胺作为柔性基板的材料。
具体的，可以以铝薄膜、铜薄膜、钼薄膜、钛薄膜、银薄膜、金薄膜、钽薄膜、钨薄膜、铬薄膜和铝合金薄膜中任意一种单层膜层或至少两种以上构成的复合膜层制备栅极金属薄膜。
具体的，可以以单层的氧化硅薄膜、氮化硅薄膜、氧化铝薄膜、五氧化二钽薄膜或氧化镱薄膜制备栅极绝缘层，或者以至少两种以上单层的薄膜构成的复合薄膜制备栅极绝缘层。
具体的，可以以含有In、Zn、Ga和Sn中的至少一种的金属氧化物制备有源层，或者对于有机薄膜晶体管，也可以以并五苯制备有源层。
步骤102、在有源层之上形成图案化的疏水层，其中，疏水层包括第一图案部，第一图案部在衬底基板上的正投影与有源层的沟道区在衬底基板上的正投影重叠。在具体实施时，为了避免有源层除沟道区以外的区域也受到水氧的影响，疏水层还可以包括第二图案部，第二图案部在衬底基板上的正投影与有源层的第一区域在衬底基板上的正投影重叠，其中，第一区域为位于沟道区两侧除用于设置源极和漏极以外的其它区域。具体的疏水层可以是含氟或含硅的疏水层。
优选的，在有源层之上形成图案化的疏水层，具体包括：
在有源层之上形成具有第一预设厚度的图案化的光刻胶层，其中，光刻胶层的图案与疏水层的图案相互补；
在图案化的光刻胶层之上形成具有第二预设厚度的疏水薄膜，第二预设厚度小于第一预设厚度；
通过光刻胶剥离液剥离图案化的光刻胶层，同时去除光刻胶层之上与光刻胶层相接触的疏水薄膜，形成图案化的疏水层。
由于光刻胶层的厚度要大于疏水薄膜的厚度，进而在将光刻胶通过光刻胶剥离液进行剥离去除时，可以使剥离液充分与光刻胶接触，有益于光刻胶的去除，进而进一步去除光刻胶上方附着的疏水薄膜，而没有光刻胶部分的疏水薄膜可以保留，形成图案化的疏水层。
步骤103、在疏水层之上形成源极和漏极，源极和漏极分别位于沟道区的两侧，与有源层接触。由于疏水层是图案化的，即，有源层沟道区上方有疏水层，沟道区两侧用于设置源极和漏极的区域没有疏水层，进而在疏水层上方形成源漏极薄膜时，可以使源极和漏极与有源层接触。
在具体实施时，在有源层之上形成图案化的疏水层，具体包括：在有源层之上形成图案化的全氟聚合物疏水层。
具体的，在衬底基板之上依次形成栅极、栅极绝缘层以及有源层，可以包括：在衬底基板之上形成铝/钼金属薄膜，并图案化形成栅极；在栅极之上形成二氧化硅薄膜，并刻蚀形成栅极绝缘层；在栅极绝缘层之上形成铟镓锌氧化物薄膜，并形成图案化的有源层；进而，在疏水层之上形成源极和漏极，具体包括：在疏水层之上形成钼/铝/钼金属薄膜，并图案化形成源极和漏极。
在具体实施时，在有源层之上形成图案化的疏水层，具体包括：在有源层之上形成图案化的六甲基硅烷疏水层。
具体的，在衬底基板之上依次形成栅极、栅极绝缘层以及有源层，可以包括：在衬底基板之上形成石墨烯薄膜，并图案化形成栅极；在栅极之上形成聚乙烯吡咯烷酮薄膜，并刻蚀形成栅极绝缘层；在栅极绝缘层之上形成并五苯薄膜，并图案化形成有源层；进而，在图案化的疏水层之上形成源极和漏极，具体包括：在图案化的疏水层之上形成石墨烯薄膜，并图案化形成源极和漏极。
为了更详细的对本申请提供的氧化物薄膜晶体管的制备方法进行说明，结合附图2至附图6举例如下：
实施例一
步骤一、在衬底基板1之上溅射Al/Mo(Al:30nm，Mo:250nm)金属薄膜，并图案化形成栅极2，衬底基板具体可以为玻璃；再通过化学沉积方法沉积500nm的SiO2薄膜，刻蚀后形成栅极绝缘层层3；再在栅极绝缘层3之上溅射500nm的IGZO薄膜，并图案化形成有源层4。需要说明的是，有源层4一般包括有沟道区41，而薄膜晶体管一般在有源层4的沟道区41的两侧还设置有与有源层接触的源极和漏极，即，有源层4还包括与源、漏极接触的第二区域42，而沟道区41两侧除与源极和漏极接触的第二区域区域42以外的其它区域可以作为第一区域43。在衬底基板之上形成有源层的薄膜晶体管的结构图如图2所示。
步骤二、在有源层4之上涂布2.5微米厚的正性光阻胶(PR)，通过曝光显影得到图案化的光刻胶层5。其中，由于光刻胶层的图案是为了形成与光刻胶层图案相互补的疏水层图案，因而需要满足光刻胶层的图案与疏水层的图案相互补。另外，由于疏水层的图案是要遮挡有源层的沟道区，或是遮挡沟道区与第一区域，即，不对有源层的用于设置源极和漏极的区域进行遮挡，进而，具体的，光刻胶层的图案在衬底基板上的正投影应与用于设置源极和漏极的区域在衬底基板上的正投影重叠。在有源层之上形成光刻胶层的薄膜晶体管的示意图如图3所示。
步骤三、通过溶液喷涂的方法喷涂100nm厚的全氟聚合物(CYTOP)，然后180℃热处理使其固化形成稳定的疏水薄膜。其中，疏水薄膜包括位于光刻胶层5之上且与光刻胶层5接触的第三图案部63，位于两第三图案部63之间的第一图案部61(与有源层的沟道区对应)，以及位于每一第三图案部63远离第一图案部61的第二图案部62。在光刻胶层之上形成疏水薄膜的薄膜晶体管的结构示意图如图4所示。
步骤四、使用光刻胶剥离液将光刻胶剥离，进而去除光刻胶层5之上与光刻胶相接触的疏水薄膜，即第一疏水部61，从而得到图案化的疏水层6，即，疏水层包括第一图案部61，还包括第二图案部62，其中，第一图案部61在衬底基板1上的正投影与有源层4的沟道区41在衬底基板1上的正投影重叠，第二图案部62在衬底基板1上的正投影与有源层4的第一区域43在衬底基板1上的正投影重叠，其中，第一区域43为位于沟道区42两侧除用于设置源极和漏极以外的其它区域。形成图案化的疏水层的薄膜晶体管的结构示意图如图5所示。
步骤五、使用蒸镀或溅射的方式将Mo/AL/Mo(Mo：30nm，AL：50nm，Mo：30nm)薄膜做在表面上，使用金属刻蚀液刻蚀后，得到薄膜晶体管的源极7和漏极8。形成源极和漏极的薄膜晶体管的示意图如图6所示。
实施例二：
步骤一、衬底基板1之上上图案化转移石墨烯(Graphene)薄膜，并进行图案化形成栅极2，具体的石墨烯可以通过CVD法制备，具体的衬底基板可以为聚对苯二甲酸乙二醇酯(Polyethylene terephthalate，PET)衬底基板；再通过溶液法涂布400nm厚的聚乙烯吡咯烷酮薄膜(polyvinyl pyrrolidone，PVP),刻蚀后形成栅绝缘层3；再溶液法制备有机半导体层并五苯，并图案化形成有源层4。在衬底基板之上形成有源层的薄膜晶体管的结构图如图2所示。
步骤二，在有源层上涂布2.5微米厚的负性光阻胶，通过曝光显影得到图案化的光刻胶层5。在有源层之上形成光刻胶层的薄膜晶体管的示意图如图3所示。
步骤三、通过溶液喷涂的方法喷涂100nm厚的六甲基硅烷(HMDS)，然后100℃热处理使其固化形成稳定的疏水薄膜。其中，疏水薄膜包括位于光刻胶层5之上且与光刻胶层5接触的第三图案部63，位于两第三图案部63之间的第一图案部61(与有源层的沟道区对应)，以及位于每一第三图案部63远离第一图案部61的第二图案部62。在光刻胶层之上形成疏水薄膜的薄膜晶体管的结构示意图如图4所示。
步骤四、使用光刻胶剥离液将光刻胶剥离，进而去除光刻胶层之上与光刻胶相接触的疏水层，从而得到图案化的疏水层，即，疏水层包括第一图案部61，还包括第二图案部62，其中，第一图案部61在衬底基板1上的正投影与有源层4的沟道区41在衬底基板1上的正投影重叠，第二图案部62在衬底基板1上的正投影与有源层4的第一区域43在衬底基板1上的正投影重叠，其中，第一区域1为位于沟道区42两侧除用于设置源极和漏极以外的其它区域。形成图案化的疏水层的薄膜晶体管的结构示意图如图5所示。。
步骤五、图案转移法转移石墨烯薄膜至PET衬底基底上，并进行图案化形成源极7和漏极8。形成源极和漏极的薄膜晶体管的示意图如图6所示。
需要说明的是，实施例二和实施例一的结构示意图基本相同，不同之处在于实施例二各膜层的材质以及相应的形成方法与实施例一不同，以上已进行详细描述，在此不再赘述。
参见图6所示，本申请实施例还提供一种采用本申请实施例提供的制作方法制作的薄膜晶体管，薄膜晶体管包括：
依次设置在衬底基板1之上的栅极2、栅极绝缘层3以及有源层4；
设置在有源层4之上图案化的疏水层，其中，疏水层的图案包括第一图案部61，第一图案部61在衬底基板1上的正投影与有源层4的沟道区在衬底基板1上的正投影重叠，在具体实施时，疏水层还可以包括第二图案部62，第二图案部62在衬底基板1上的正投影与有源层4的第一区域在衬底基板1上的正投影重叠，其中，第一区域为位于沟道区42两侧除用于设置源极和漏极以外的其它区域。
设置在疏水层之上的源极7和漏极8，源极7和漏极8分别位于沟道区的两侧，与有源层4接触。
优选的，疏水层的材质为全氟聚合物或六甲基硅烷。
本申请实施例还提供一种阵列基板，包括本申请实施例提供的薄膜晶体管。
本申请实施例有益效果如下：本申请实施例在形成有源层之后，在有源层之上形成图案化的疏水层，由于疏水层的疏水性，进而可以阻挡环境中的水氧对有源层的影响，使有源层沟道区可以形成更加稳定的界面，进而可以提高薄膜晶体管的稳定性；同时，在有源层之上形成的图案化的疏水层，还可以在后续通过刻蚀形成源极和漏极时，避免刻蚀液与有源层的接触，防止有源层受到损伤，起到保护有源层的作用。
显然，本领域的技术人员可以对本申请进行各种改动和变型而不脱离本申请的精神和范围。这样，倘若本申请的这些修改和变型属于本申请权利要求及其等同技术的范围之内，则本申请也意图包含这些改动和变型在内。

Claims (10)

1.一种薄膜晶体管的制作方法，其特征在于，包括：
在衬底基板之上依次形成栅极、栅极绝缘层以及有源层；
在所述有源层之上形成图案化的疏水层，其中，所述疏水层包括第一图案部，所述第一图案部在所述衬底基板上的正投影与所述有源层的沟道区在所述衬底基板上的正投影重叠；
在所述疏水层之上形成源极和漏极，所述源极和所述漏极分别位于所述沟道区的两侧，与所述有源层接触。
2.如权利要求1所述的制作方法，其特征在于，所述疏水层还包括第二图案部，所述第二图案部在所述衬底基板上的正投影与所述有源层的第一区域在所述衬底基板上的正投影重叠，其中，所述第一区域为位于所述沟道区两侧除用于设置所述源极和所述漏极以外的其它区域。
3.如权利要求1或2所述的制作方法，其特征在于，所述在所述有源层之上形成图案化的疏水层，具体包括：
在所述有源层之上形成具有第一预设厚度的图案化的光刻胶层，其中，所述光刻胶层的图案与所述疏水层的图案相互补；
在图案化的所述光刻胶层之上形成具有第二预设厚度的疏水薄膜，所述第二预设厚度小于所述第一预设厚度；
通过光刻胶剥离液剥离图案化的所述光刻胶层，同时去除所述光刻胶层之上与所述光刻胶层相接触的所述疏水薄膜，形成图案化的疏水层。
4.如权利要求1所述的制作方法，其特征在于，所述在所述有源层之上形成图案化的疏水层，具体包括：在所述有源层之上形成图案化的全氟聚合物疏水层。
5.如权利要求4所述的制作方法，其特征在于，
所述在衬底基板之上依次形成栅极、栅极绝缘层以及有源层，具体包括：
在衬底基板之上依次形成铝金属薄膜、钼金属薄膜，并图案化形成栅极；
在所述栅极之上形成二氧化硅薄膜，并刻蚀成栅极绝缘层；
在所述栅极绝缘层之上形成铟镓锌氧化物薄膜，并形成图案化的有源层；
所述在所述疏水层之上形成源极和漏极，具体包括：在所述疏水层之上依次形成钼金属薄膜、铝金属薄膜、钼金属薄膜，并图案化形成源极和漏极。
6.如权利要求1所述的制作方法，其特征在于，所述在所述有源层之上形成图案化的疏水层，具体包括：在所述有源层之上形成图案化的六甲基硅烷疏水层。
7.如权利要求6所述的制作方法，其特征在于，
所述在衬底基板之上依次形成栅极、栅极绝缘层以及有源层，具体包括：
在衬底基板之上形成石墨烯薄膜，并图案化形成栅极；
在所述栅极之上形成聚乙烯吡咯烷酮薄膜，并刻蚀形成栅极绝缘层；
在所述栅极绝缘层之上形成并五苯薄膜，并图案化形成有源层；
所述在图案化的疏水层之上形成源极和漏极，具体包括：在图案化的所述疏水层之上形成石墨烯薄膜，并图案化形成源极和漏极。
8.一种采用如权利要求1-7任一项所述的制作方法制作的薄膜晶体管，其特征在于，所述薄膜晶体管包括：
依次设置在衬底基板之上的栅极、栅极绝缘层以及有源层；
设置在所述有源层之上图案化的疏水层，其中，所述疏水层包括第一图案部，所述第一图案部在所述衬底基板上的正投影与所述有源层的沟道区在所述衬底基板上的正投影重叠；
设置在所述疏水层之上的源极和漏极，所述源极和所述漏极分别位于所述沟道区的两侧，与所述有源层接触。
9.如权利要求8所述的薄膜晶体管，其特征在于，所述疏水层的材质为全氟聚合物或六甲基硅烷。
10.一种阵列基板，其特征在于，包括如权利要求8所述的薄膜晶体管。
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