CN107799466A - Tft基板及其制作方法 - Google Patents

Tft基板及其制作方法 Download PDF

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CN107799466A
CN107799466A CN201711140087.2A CN201711140087A CN107799466A CN 107799466 A CN107799466 A CN 107799466A CN 201711140087 A CN201711140087 A CN 201711140087A CN 107799466 A CN107799466 A CN 107799466A
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tft
photoresist layer
film
transparent conductive
pixel electrode
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CN107799466B (zh
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徐洪远
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201711140087.2A priority Critical patent/CN107799466B/zh
Priority to PCT/CN2017/116283 priority patent/WO2019095482A1/zh
Priority to US15/743,918 priority patent/US10784287B2/en
Priority to KR1020207015934A priority patent/KR102318054B1/ko
Priority to EP17932520.4A priority patent/EP3712931A4/en
Priority to JP2020520000A priority patent/JP6899487B2/ja
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Abstract

本发明提供一种TFT基板及其制作方法。该TFT基板的制作方法先在TFT上连续沉积金属薄膜与透明导电薄膜；再在透明导电薄膜上涂布光阻，并使用半色调掩膜板对光阻进行曝光、显影，得到第一光阻层与第二光阻层；然后蚀刻未被第一光阻层与第二光阻层所遮盖的透明导电薄膜与金属薄膜；接着对第一光阻层与第二光阻层进行灰化处理，去除第二光阻层；之后对裸露的透明导电薄膜进行蚀刻，暴露出未被剩余的第一光阻层所遮盖的金属薄膜；再对暴露出来的金属薄膜进行氧化处理，形成绝缘的金属氧化物薄膜作钝化层；最后剥离剩余的第一光阻层，暴露出被剩余的第一光阻层所遮盖的金属薄膜与透明导电薄膜作像素电极；能够减少光罩数量，节省制作成本。

Description

TFT基板及其制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板及其制作方法。
背景技术
平面显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛地应用。现有的平面显示装置主要包括液晶显示器(Liquid Crystal Display，LCD)及有机电致发光显示器(Organic Light Emitting Display，OLED)。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括壳体、设于壳体内的液晶面板及设于壳体内的背光模组(Backlight Module)。液晶面板的结构是由一彩色滤光片基板(Color Filter，CF)、一薄膜晶体管阵列基板(Thin Film Transistor ArraySubstrate，TFT Array Substrate，简称TFT基板)以及一配置于两基板间的液晶层(LiquidCrystal Layer)所构成，其工作原理是通过在两基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
有机电致发光显示器同样需要TFT基板，以TFT作为开关部件和驱动部件，并在TFT基板上制作出呈阵列式排布的像素结构。
以氧化物半导体(如铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO))作为TFT的沟道层的技术是当前的热门技术。氧化物半导体具有较高的载流子迁移率，可以大大提高TFT对像素电极的充放电速率，实现更快的刷新率，而且氧化物半导体与非晶硅制程相容性较高，所以氧化物半导体逐渐成为LCD及OLED中TFT的沟道层的首选材料。
在TFT基板中，各绝缘层(如栅极绝缘层、钝化层等)的材料一般采用氧化硅(SiOx)与氮化硅(SiNx)的叠层结构，而刻蚀SiOx的气体一般采用四氟甲烷(CF4)，这种气体容易在金属(比如铜(Cu))表面形成化合物，影响金属表面的电接触特性。为了解决这个问题，在制作TFT基板时，通常会将TFT栅极所需要的过孔与TFT源/漏极所需要的过孔分开刻蚀，也就是将对栅极绝缘层挖洞与对钝化层挖洞分开进行，然后在钝化层上制作出像素电极，需使用一道光罩对栅极绝缘层做挖洞处理，使用另一道光罩对钝化层做挖洞处理，使用再一道光罩做出图案化的像素电极。可见，整个TFT基板的制程所需要的光罩数量较多，制作成本较高。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，能够减少制程所需要的光罩数量，节省制作成本，提升产能。
本发明的另一目的在于提供一种TFT基板，其制作成本较低，产能较高。
为实现上述目的，本发明首先提供一种TFT基板的制作方法，包括如下步骤：
步骤S1、提供一衬底基板，在所述衬底基板上制作出呈阵列式排布的TFT；
步骤S2、在所有TFT上连续沉积一层金属薄膜与一层透明导电薄膜；
步骤S3、在所述透明导电薄膜上涂布光阻，并使用半色调光罩对光阻进行曝光、显影，对所述光阻进行图案化处理，得到第一光阻层与第二光阻层，且第一光阻层的厚度大于第二光阻层的厚度；
所述第一光阻层的图案与欲形成的像素电极的图案一致，且所述TFT的漏极远离源极的部分被第一光阻层遮盖；所述TFT的漏极的其余部分、源极与沟道层被所述第二光阻层遮盖；
步骤S4、对未被第一光阻层与第二光阻层所遮盖的透明导电薄膜与金属薄膜进行蚀刻；
步骤S5、对第一光阻层与第二光阻层进行灰化处理，去除第二光阻层，同时减小第一光阻层的厚度；
步骤S6、对裸露的透明导电薄膜进行蚀刻，暴露出未被剩余的第一光阻层所遮盖的金属薄膜；
步骤S7、对所述暴露出来的金属薄膜进行氧化处理，形成绝缘的金属氧化物薄膜作钝化层；
步骤S8、剥离剩余的第一光阻层，暴露出被剩余的第一光阻层所遮盖的金属薄膜与透明导电薄膜作像素电极；
所述像素电极接触所述TFT的漏极远离源极的部分。
所述金属薄膜的材料为铝、钼或钛；所述步骤S7中形成的金属氧化物薄膜为氧化铝薄膜、氧化钼薄膜或氧化钛薄膜。
所述透明导电薄膜的材料为氧化铟锡。
所述金属薄膜的厚度小于50nm。
所述TFT为氧化物半导体TFT。
所述步骤S7使用氧等离子体对所述暴露出来的金属薄膜进行氧化处理。
本发明还提供一种TFT基板，包括：衬底基板、呈阵列式排布在所述衬底基板的TFT以及设在所述TFT上的钝化层与像素电极；
所述像素电极包括金属薄膜及层叠在所述金属薄膜上的透明导电薄膜，且所述像素电极中的金属薄膜接触所述TFT的漏极远离源极的部分；
所述钝化层遮盖所述TFT的漏极的其余部分、源极与沟道层，，且所述钝化层为与像素电极中的金属薄膜一体的绝缘的金属氧化物薄膜。
所述像素电极中的金属薄膜的材料为铝、钼或钛；所述钝化层为氧化铝薄膜、氧化钼薄膜或氧化钛薄膜；所述像素电极中的透明导电薄膜的材料为氧化铟锡。
所述像素电极中的金属薄膜的厚度小于50nm。
所述TFT为氧化物半导体TFT。
本发明的有益效果：本发明提供的TFT基板的制作方法，使用一道半色调光罩即可制作出钝化层与像素电极，相比现有技术能够减少制程所需要的光罩数量，从而节省制作成本，减少制作工序，提升产能。本发明提供的TFT基板，由金属薄膜及层叠在所述金属薄膜上的透明导电薄膜构成像素电极，且钝化层为与像素电极中的金属薄膜一体的绝缘的金属氧化物薄膜，能够通过上述TFT基板的制作方法制得，所以制作成本较低，产能较高。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的TFT基板的制作方法的流程图；
图2为本发明的TFT基板的制作方法的步骤S1的示意图；
图3为本发明的TFT基板的制作方法的步骤S2的示意图；
图4为本发明的TFT基板的制作方法的步骤S3的示意图；
图5为本发明的TFT基板的制作方法的步骤S4的示意图；
图6为本发明的TFT基板的制作方法的步骤S5的示意图；
图7为本发明的TFT基板的制作方法的步骤S6的示意图；
图8为本发明的TFT基板的制作方法的步骤S7的示意图；
图9为本发明的TFT基板的制作方法的步骤S8的示意图暨本发明的TFT基板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种TFT基板的制作方法，包括如下步骤：
步骤S1、请参阅图2，提供一衬底基板1，在所述衬底基板1上制作出呈阵列式排布的TFT 10。
具体地：
所述衬底基板1优选玻璃基板。
所述TFT 10的结构形式不限，可以为背沟道(BCE)型TFT，也可以为蚀刻阻挡(ESL)型TFT。以BCE型TFT为例，如图2所示，所述TFT 10包括设在衬底基板1上的栅极104、覆盖所述栅极104与衬底基板1的栅极绝缘层105、于所述栅极104上方设在栅极绝缘层105上的沟道层103以及设在栅极绝缘层105上分别接触沟道层103两侧的源极102与漏极101，这与现有技术无异；通过现有的常规制程即可制得所述TFT 10，此处不做展开叙述。
进一步地，所述TFT 10优选氧化物半导体TFT，即TFT 10的沟道层103的材料选用铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)或其它适合的氧化物。
步骤S2、请参阅图3，在所有TFT 10上连续沉积一层金属薄膜2与一层透明导电薄膜3。
具体地：
所述金属薄膜2的材料优选铝(Al)、钼(Mo)或钛(Ti)；为了有助于最终形成的像素电极的透光性能，所述金属薄膜2的厚度优选小于50nm。
所述透明导电薄膜3的材料优选氧化铟锡(Indium Tin Oxide，ITO)。
步骤S3、请参阅图4，在所述透明导电薄膜3上涂布光阻，并使用半色调光罩(HalfTone Mask)对光阻进行曝光，使得不同区域光阻收到的光照强度不同，以对所述光阻进行图案化处理，显影后便得到第一光阻层41与第二光阻层42，且第一光阻层41的厚度大于第二光阻层42的厚度。
第一光阻层41的图案与欲形成的像素电极的图案一致，且所述TFT 10的漏极101远离源极102的部分被第一光阻层41遮盖；所述TFT 10的漏极101的其余部分、源极102与沟道层103被所述第二光阻层42遮盖。
步骤S4、请参阅图5，使用蚀刻液对未被第一光阻层41与第二光阻层42所遮盖的透明导电薄膜3与金属薄膜2进行蚀刻。
步骤S5、请参阅图6，对第一光阻层41与第二光阻层42进行灰化(Ash)处理，去除第二光阻层42，同时减小第一光阻层41的厚度。
步骤S6、请参阅图7，使用蚀刻液对裸露的透明导电薄膜3进行蚀刻，暴露出未被剩余的第一光阻层41所遮盖的金属薄膜2。
步骤S7、请参阅图8，使用氧等离子体(O2Plasma)对所述暴露出来的金属薄膜2进行氧化处理，形成绝缘的金属氧化物薄膜，如氧化铝(AlOX)薄膜、氧化钼(MoOX)薄膜或氧化钛(TiOX)薄膜等作钝化层20。
步骤S8、请参阅图9，剥离剩余的第一光阻层41，暴露出被剩余的第一光阻层41所遮盖的金属薄膜2与透明导电薄膜3作像素电极30。
所述像素电极30接触所述TFT 10的漏极101远离源极102的部分。
上述TFT基板的制作方法，使用一道半色调光罩即可制作出钝化层20与像素电极30，钝化层20由与像素电极30中金属薄膜2一体的金属薄膜经氧化处理制得，无需在钝化层20内挖洞，像素电极30直接接触所述TFT 10的漏极101远离源极102的部分，相比现有技术能够减少制程所需要的光罩数量，从而节省制作成本，减少制作工序，提升产能。
请参阅图9，本发明还提供一种由上述TFT基板的制作方法所制得的TFT基板，包括：衬底基板1、呈阵列式排布在所述衬底基板1的TFT 10以及设在所述TFT 10上的钝化层20与像素电极30。
所述像素电极30包括金属薄膜2及层叠在所述金属薄膜2上的透明导电薄膜3，且所述像素电极30中的金属薄膜2接触所述TFT 10的漏极101远离源极102的部分。
所述钝化层20遮盖所述TFT 10的漏极101的其余部分、源极102与沟道层103，且所述钝化层20为与像素电极30中的金属薄膜2一体的绝缘的金属氧化物薄膜。
具体地：
所述衬底基板1优选玻璃基板。
所述TFT 10的结构形式不限，可以为BCE型TFT，也可以为ESL型TFT。以BCE型TFT为例，如图9所示，所述TFT 10包括设在衬底基板1上的栅极104、覆盖所述栅极104与衬底基板1的栅极绝缘层105、于所述栅极104上方设在栅极绝缘层105上的沟道层103以及设在栅极绝缘层105上分别接触沟道层103两侧的源极102与漏极101，这与现有技术无异。进一步地，所述TFT 10优选氧化物半导体TFT，即TFT 10的沟道层103的材料选用IGZO或其它适合的氧化物。
所述像素电极30中的金属薄膜2的材料优选Al、Mo或Ti，金属薄膜2的厚度优选小于50nm。
所述像素电极30中的透明导电薄膜3的材料优选ITO。
所述钝化层20优选AlOX薄膜、MoOX薄膜或TiOX薄膜。
本发明的TFT基板，由金属薄膜2及层叠在所述金属薄膜2上的透明导电薄膜3构成像素电极30，且钝化层20为与像素电极30中的金属薄膜2一体的绝缘的金属氧化物薄膜，能够通过上述TFT基板的制作方法制得，所以制作成本较低，产能较高。
综上所述，本发明的TFT基板的制作方法，使用一道半色调光罩即可制作出钝化层与像素电极，相比现有技术能够减少制程所需要的光罩数量，从而节省制作成本，减少制作工序，提升产能。本发明的TFT基板，由金属薄膜及层叠在所述金属薄膜上的透明导电薄膜构成像素电极，且钝化层为与像素电极中的金属薄膜一体的绝缘的金属氧化物薄膜，能够通过上述TFT基板的制作方法制得，所以制作成本较低，产能较高。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明的权利要求的保护范围。

Claims (10)

1.一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤S1、提供一衬底基板(1)，在所述衬底基板(1)上制作出呈阵列式排布的TFT(10)；
步骤S2、在所有TFT(10)上连续沉积一层金属薄膜(2)与一层透明导电薄膜(3)；
步骤S3、在所述透明导电薄膜(3)上涂布光阻，并使用半色调光罩对光阻进行曝光、显影，对所述光阻进行图案化处理，得到第一光阻层(41)与第二光阻层(42)，且第一光阻层(41)的厚度大于第二光阻层(42)的厚度；
所述第一光阻层(41)的图案与欲形成的像素电极的图案一致，且所述TFT(10)的漏极(101)远离源极(102)的部分被第一光阻层(41)遮盖；所述TFT(10)的漏极(101)的其余部分、源极(102)与沟道层(103)被所述第二光阻层(42)遮盖；
步骤S4、对未被第一光阻层(41)与第二光阻层(42)所遮盖的透明导电薄膜(3)与金属薄膜(2)进行蚀刻；
步骤S5、对第一光阻层(41)与第二光阻层(42)进行灰化处理，去除第二光阻层(42)，同时减小第一光阻层(41)的厚度；
步骤S6、对裸露的透明导电薄膜(3)进行蚀刻，暴露出未被剩余的第一光阻层(41)所遮盖的金属薄膜(2)；
步骤S7、对所述暴露出来的金属薄膜(2)进行氧化处理，形成绝缘的金属氧化物薄膜作钝化层(20)；
步骤S8、剥离剩余的第一光阻层(41)，暴露出被剩余的第一光阻层(41)所遮盖的金属薄膜(2)与透明导电薄膜(3)作像素电极(30)；
所述像素电极(30)接触所述TFT(10)的漏极(101)远离源极(102)的部分。
2.如权利要求1所述的TFT基板的制作方法，其特征在于，所述金属薄膜(2)的材料为铝、钼或钛；所述步骤S7中形成的金属氧化物薄膜为氧化铝薄膜、氧化钼薄膜或氧化钛薄膜。
3.如权利要求1所述的TFT基板的制作方法，其特征在于，所述透明导电薄膜(3)的材料为氧化铟锡。
4.如权利要求1所述的TFT基板的制作方法，其特征在于，所述金属薄膜(2)的厚度小于50nm。
5.如权利要求1所述的TFT基板的制作方法，其特征在于，所述TFT(10)为氧化物半导体TFT。
6.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S7使用氧等离子体对所述暴露出来的金属薄膜(2)进行氧化处理。
7.一种TFT基板，其特征在于，包括：衬底基板(1)、呈阵列式排布在所述衬底基板(1)的TFT(10)、设在所述TFT(10)上的钝化层(20)、像素电极(30)；
所述像素电极(30)包括金属薄膜(2)及层叠在所述金属薄膜(2)上的透明导电薄膜(3)，且所述像素电极(30)中的金属薄膜(2)接触所述TFT(10)的漏极(101)远离源极(102)的部分；
所述钝化层(20)遮盖所述TFT(10)的漏极(101)的其余部分、源极(102)与沟道层(103)，且所述钝化层(20)为与像素电极(30)中的金属薄膜(2)一体的绝缘的金属氧化物薄膜。
8.如权利要求7所述的TFT基板，其特征在于，所述像素电极(30)中的金属薄膜(2)的材料为铝、钼或钛；所述钝化层(20)为氧化铝薄膜、氧化钼薄膜或氧化钛薄膜；所述像素电极(30)中的透明导电薄膜(3)的材料为氧化铟锡。
9.如权利要求7所述的TFT基板，其特征在于，所述像素电极(30)中的金属薄膜(2)的厚度小于50nm。
10.如权利要求7所述的TFT基板，其特征在于，所述TFT(10)为氧化物半导体TFT。
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