CN101614917B - Tft-lcd阵列基板及其制造方法 - Google Patents
Tft-lcd阵列基板及其制造方法 Download PDFInfo
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- CN101614917B CN101614917B CN200810115595XA CN200810115595A CN101614917B CN 101614917 B CN101614917 B CN 101614917B CN 200810115595X A CN200810115595X A CN 200810115595XA CN 200810115595 A CN200810115595 A CN 200810115595A CN 101614917 B CN101614917 B CN 101614917B
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- passivation layer
- partition grooves
- pixel electrode
- tft
- photoresist
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- Expired - Fee Related
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- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 78
- 238000002161 passivation Methods 0.000 claims abstract description 75
- 238000005192 partition Methods 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000000203 mixture Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 238000005516 engineering process Methods 0.000 claims description 61
- 238000009413 insulation Methods 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 28
- 238000001312 dry etching Methods 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000012797 qualification Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 72
- 238000010586 diagram Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000002207 thermal evaporation Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910000583 Nd alloy Inorganic materials 0.000 description 4
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133371—Cells with varying thickness of the liquid crystal layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810115595XA CN101614917B (zh) | 2008-06-25 | 2008-06-25 | Tft-lcd阵列基板及其制造方法 |
US12/490,472 US8404507B2 (en) | 2008-06-25 | 2009-06-24 | TFT-LCD array substrate and manufacturing method thereof |
US13/777,220 US8735976B2 (en) | 2008-06-25 | 2013-02-26 | TFT-LCD array substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810115595XA CN101614917B (zh) | 2008-06-25 | 2008-06-25 | Tft-lcd阵列基板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101614917A CN101614917A (zh) | 2009-12-30 |
CN101614917B true CN101614917B (zh) | 2011-04-20 |
Family
ID=41446295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810115595XA Expired - Fee Related CN101614917B (zh) | 2008-06-25 | 2008-06-25 | Tft-lcd阵列基板及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8404507B2 (zh) |
CN (1) | CN101614917B (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101248005B1 (ko) * | 2009-11-17 | 2013-03-27 | 엘지디스플레이 주식회사 | 어레이 기판 및 그의 제조방법 |
CN102468308B (zh) * | 2010-10-28 | 2013-12-25 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和液晶显示器 |
CN102306652B (zh) * | 2011-09-19 | 2014-10-22 | 深圳莱宝高科技股份有限公司 | 一种阵列基板及其制作方法、使用该阵列基板的显示面板 |
CN102778793B (zh) * | 2011-12-22 | 2015-06-24 | 北京京东方光电科技有限公司 | 一种液晶显示装置、阵列基板及其制造方法 |
CN102655146B (zh) * | 2012-02-27 | 2013-06-12 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板的制备方法及显示装置 |
CN103278979B (zh) * | 2012-09-27 | 2016-04-20 | 上海天马微电子有限公司 | 平面式液晶显示器的阵列基板及其制造方法 |
CN103066017A (zh) * | 2012-12-28 | 2013-04-24 | 北京京东方光电科技有限公司 | 一种阵列基板的制备方法 |
KR102094847B1 (ko) * | 2013-07-03 | 2020-03-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터를 포함하는 표시 기판 및 이의 제조 방법 |
CN103413813B (zh) * | 2013-07-31 | 2016-05-25 | 北京京东方光电科技有限公司 | 一种阵列基板及其制作方法、显示装置 |
KR20150103792A (ko) | 2014-03-03 | 2015-09-14 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
CN104035256B (zh) * | 2014-06-11 | 2017-09-26 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及驱动方法 |
CN104103583B (zh) * | 2014-06-24 | 2017-02-15 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法和显示面板 |
CN104538412A (zh) * | 2015-01-26 | 2015-04-22 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN104808413A (zh) * | 2015-05-21 | 2015-07-29 | 京东方科技集团股份有限公司 | 一种电致变色显示面板及其制作方法、显示装置 |
CN105514125B (zh) * | 2016-02-02 | 2019-07-12 | 京东方科技集团股份有限公司 | 一种阵列基板、其制备方法及显示面板 |
CN105633015B (zh) * | 2016-03-09 | 2018-04-17 | 合肥京东方显示技术有限公司 | 一种阵列基板的制造方法、阵列基板及显示装置 |
WO2018112952A1 (zh) * | 2016-12-24 | 2018-06-28 | 深圳市柔宇科技有限公司 | 阵列基板制造方法 |
CN106898578B (zh) * | 2017-03-30 | 2019-08-06 | 合肥鑫晟光电科技有限公司 | 一种显示基板的制备方法、阵列基板及显示装置 |
CN108803910B (zh) | 2017-04-28 | 2021-08-06 | 京东方科技集团股份有限公司 | 触控基板及其制作方法、触控显示装置 |
CN107195635B (zh) * | 2017-05-12 | 2020-05-12 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管阵列基板及其制备方法 |
CN106941094A (zh) * | 2017-05-19 | 2017-07-11 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板 |
CN107193148B (zh) * | 2017-07-27 | 2020-07-31 | 武汉华星光电技术有限公司 | 一种显示基板和液晶显示设备 |
CN107799466B (zh) * | 2017-11-16 | 2020-04-07 | 深圳市华星光电半导体显示技术有限公司 | Tft基板及其制作方法 |
CN109065551B (zh) * | 2018-07-30 | 2020-01-14 | 深圳市华星光电技术有限公司 | Tft阵列基板的制造方法及tft阵列基板 |
CN110223989A (zh) * | 2019-05-28 | 2019-09-10 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管基板及其制作方法 |
CN111740006B (zh) * | 2020-03-31 | 2022-09-09 | 中芯越州集成电路制造(绍兴)有限公司 | 压电器件及其形成方法 |
CN111725135B (zh) * | 2020-06-30 | 2023-08-29 | 昆山龙腾光电股份有限公司 | 阵列基板的制作方法及阵列基板 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100561646B1 (ko) | 2003-10-23 | 2006-03-20 | 엘지.필립스 엘시디 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
KR101121620B1 (ko) | 2004-06-05 | 2012-02-28 | 엘지디스플레이 주식회사 | 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법 |
US20070058112A1 (en) * | 2005-09-15 | 2007-03-15 | De-Jiun Li | Liquid crystal display panel, color filter, and manufacturing method thereof |
CN100462825C (zh) | 2005-12-23 | 2009-02-18 | 北京京东方光电科技有限公司 | 一种薄膜晶体管液晶显示器的阵列基板结构及其制造方法 |
KR101228475B1 (ko) * | 2006-06-05 | 2013-01-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
-
2008
- 2008-06-25 CN CN200810115595XA patent/CN101614917B/zh not_active Expired - Fee Related
-
2009
- 2009-06-24 US US12/490,472 patent/US8404507B2/en active Active
-
2013
- 2013-02-26 US US13/777,220 patent/US8735976B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20090321740A1 (en) | 2009-12-31 |
US20130169903A1 (en) | 2013-07-04 |
CN101614917A (zh) | 2009-12-30 |
US8404507B2 (en) | 2013-03-26 |
US8735976B2 (en) | 2014-05-27 |
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Effective date of registration: 20201130 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: K-TRONICS (SUZHOU) TECHNOLOGY Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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