JP4614148B2 - 酸化物半導体及び薄膜トランジスタの製造方法 - Google Patents
酸化物半導体及び薄膜トランジスタの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010409 thin film Substances 0.000 title description 24
- 238000000034 method Methods 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 34
- 239000011159 matrix material Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/006—Compounds containing, besides tin, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
Description
非特許文献1:野村研二(Kenji Nomura)、外5名,「アモルファス酸化物半導体を用いた透明フレキシブル薄膜トランジスタの室温作製(Room-Temperature Fabrication of Transparent Flexible Thin Film Transistors Using Amorphous Oxide Semiconductors)」,ネイチャ(Nature),2004年11月,第432巻,p.488−492
特許文献1:特開2000−44236号公報
図1の構造の電界効果トランジスタを以下のようにして5種類作製した。先ず、基板として、厚さ100nmの熱酸化膜がついたシリコンウエハを用いた。用いたシリコンウエハはハイドープしたp型であり、ゲート電極として機能し、また熱酸化膜はゲート絶縁膜として機能する。
酸化物半導体のスパッタ成膜の際、ターゲット上に置いた金属酸化物ペレットの種類を変えたことを除き、実施例1〜5と同様の手順にて、4種類の電界効果トランジスタを作製した。これらの膜組成を表1に示す。
実施例1〜5及び比較例1〜4について、微小電流計6487(ケースレー社製)を用いて電界効果トランジスタ特性(ドレイン電流)を測定し、ゲート電圧−ドレイン電流特性から飽和領域におけるFET移動度を求めた。また、キャリヤ濃度に比例する値として、ゲート電圧を0Vとした時に流れるドレイン電流(以後、オフ電流と呼ぶ)を測定した。これらの結果を表1に示す。また、膜組成(x+y)/zとFET移動度の関係を示すグラフを図2に示す。
Claims (3)
- 一般式Inx+1MZny+1SnzO(4+1.5x+y+2z)(式中、M=Ga、0≦x≦0.72、−0.17≦y≦1.11、0.41≦z≦0.82、0.70≦(x+y)/z≦2.65)で表されるアモルファス酸化物を形成する工程と、
前記アモルファス酸化物を酸化性ガス雰囲気下で熱処理する工程と
を含む酸化物半導体の製造方法。 - 前記酸化性ガスが、酸素ラジカル、酸素、水分、またはオゾンを少なくとも含むものである請求項1に記載の酸化物半導体の製造方法。
- ゲート絶縁膜またはソース及びドレイン電極上に、一般式Inx+1MZny+1SnzO(4+1.5x+y+2z)(式中、M=Ga、0≦x≦0.72、−0.17≦y≦1.11、0.41≦z≦0.82、0.70≦(x+y)/z≦2.65)で表されるアモルファス酸化物を形成する工程と、
前記アモルファス酸化物を酸化性ガス雰囲気下で熱処理する工程と
を含む薄膜トランジスタの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006144946 | 2006-05-25 | ||
JP2006144946 | 2006-05-25 | ||
PCT/JP2007/060686 WO2007139009A1 (ja) | 2006-05-25 | 2007-05-25 | 酸化物半導体、薄膜トランジスタ、及びそれらの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2007139009A1 JPWO2007139009A1 (ja) | 2009-10-08 |
JP4614148B2 true JP4614148B2 (ja) | 2011-01-19 |
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JP2008517902A Expired - Fee Related JP4614148B2 (ja) | 2006-05-25 | 2007-05-25 | 酸化物半導体及び薄膜トランジスタの製造方法 |
Country Status (4)
Country | Link |
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US (1) | US7807515B2 (ja) |
EP (1) | EP2020686B1 (ja) |
JP (1) | JP4614148B2 (ja) |
WO (1) | WO2007139009A1 (ja) |
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CN108109592B (zh) | 2016-11-25 | 2022-01-25 | 株式会社半导体能源研究所 | 显示装置及其工作方法 |
JP7063712B2 (ja) * | 2018-05-09 | 2022-05-09 | 株式会社神戸製鋼所 | 酸化物半導体層を含む薄膜トランジスタ |
JP6834062B2 (ja) * | 2018-08-01 | 2021-02-24 | 出光興産株式会社 | 結晶構造化合物、酸化物焼結体、及びスパッタリングターゲット |
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WO2005088726A1 (ja) * | 2004-03-12 | 2005-09-22 | Japan Science And Technology Agency | アモルファス酸化物及び薄膜トランジスタ |
JP2006013433A (ja) * | 2004-05-24 | 2006-01-12 | Toppan Printing Co Ltd | 薄膜トランジスタ |
JP2007123699A (ja) * | 2005-10-31 | 2007-05-17 | Toppan Printing Co Ltd | 薄膜トランジスタとその製造方法 |
JP2007142196A (ja) * | 2005-11-18 | 2007-06-07 | Idemitsu Kosan Co Ltd | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ |
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JP2001199961A (ja) * | 2000-01-21 | 2001-07-24 | Fuji Photo Film Co Ltd | 重合性溶融塩モノマー、電解質組成物および電気化学電池 |
KR100841545B1 (ko) * | 2004-03-31 | 2008-06-26 | 티디케이가부시기가이샤 | 희토류 자석 및 이의 제조방법 |
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WO2005088726A1 (ja) * | 2004-03-12 | 2005-09-22 | Japan Science And Technology Agency | アモルファス酸化物及び薄膜トランジスタ |
JP2006013433A (ja) * | 2004-05-24 | 2006-01-12 | Toppan Printing Co Ltd | 薄膜トランジスタ |
JP2007123699A (ja) * | 2005-10-31 | 2007-05-17 | Toppan Printing Co Ltd | 薄膜トランジスタとその製造方法 |
JP2007142196A (ja) * | 2005-11-18 | 2007-06-07 | Idemitsu Kosan Co Ltd | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ |
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US20090289249A1 (en) | 2009-11-26 |
US7807515B2 (en) | 2010-10-05 |
JPWO2007139009A1 (ja) | 2009-10-08 |
EP2020686A4 (en) | 2009-11-11 |
EP2020686A1 (en) | 2009-02-04 |
EP2020686B1 (en) | 2013-07-10 |
WO2007139009A1 (ja) | 2007-12-06 |
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