JP2025106380A5 - - Google Patents

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Publication number
JP2025106380A5
JP2025106380A5 JP2025061542A JP2025061542A JP2025106380A5 JP 2025106380 A5 JP2025106380 A5 JP 2025106380A5 JP 2025061542 A JP2025061542 A JP 2025061542A JP 2025061542 A JP2025061542 A JP 2025061542A JP 2025106380 A5 JP2025106380 A5 JP 2025106380A5
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JP
Japan
Prior art keywords
transistor
conductive film
film
located above
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025061542A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025106380A (ja
Filing date
Publication date
Priority claimed from JP2020192366A external-priority patent/JP7173710B2/ja
Application filed filed Critical
Publication of JP2025106380A publication Critical patent/JP2025106380A/ja
Publication of JP2025106380A5 publication Critical patent/JP2025106380A5/ja
Pending legal-status Critical Current

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JP2025061542A 2014-03-14 2025-04-03 半導体装置 Pending JP2025106380A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2014051497 2014-03-14
JP2014051497 2014-03-14
JP2014069626 2014-03-28
JP2014069626 2014-03-28
JP2020192366A JP7173710B2 (ja) 2014-03-14 2020-11-19 半導体装置
JP2022176807A JP7483830B2 (ja) 2014-03-14 2022-11-03 半導体装置
JP2024004955A JP7662853B2 (ja) 2014-03-14 2024-01-17 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2024004955A Division JP7662853B2 (ja) 2014-03-14 2024-01-17 半導体装置

Publications (2)

Publication Number Publication Date
JP2025106380A JP2025106380A (ja) 2025-07-15
JP2025106380A5 true JP2025106380A5 (enExample) 2025-09-17

Family

ID=54069744

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2015050214A Expired - Fee Related JP6599622B2 (ja) 2014-03-14 2015-03-13 半導体装置、及び電子機器
JP2019182982A Withdrawn JP2020005002A (ja) 2014-03-14 2019-10-03 半導体装置
JP2020192366A Active JP7173710B2 (ja) 2014-03-14 2020-11-19 半導体装置
JP2022176807A Active JP7483830B2 (ja) 2014-03-14 2022-11-03 半導体装置
JP2024004955A Active JP7662853B2 (ja) 2014-03-14 2024-01-17 半導体装置
JP2025061542A Pending JP2025106380A (ja) 2014-03-14 2025-04-03 半導体装置

Family Applications Before (5)

Application Number Title Priority Date Filing Date
JP2015050214A Expired - Fee Related JP6599622B2 (ja) 2014-03-14 2015-03-13 半導体装置、及び電子機器
JP2019182982A Withdrawn JP2020005002A (ja) 2014-03-14 2019-10-03 半導体装置
JP2020192366A Active JP7173710B2 (ja) 2014-03-14 2020-11-19 半導体装置
JP2022176807A Active JP7483830B2 (ja) 2014-03-14 2022-11-03 半導体装置
JP2024004955A Active JP7662853B2 (ja) 2014-03-14 2024-01-17 半導体装置

Country Status (3)

Country Link
US (1) US9716100B2 (enExample)
JP (6) JP6599622B2 (enExample)
KR (4) KR102378443B1 (enExample)

Families Citing this family (16)

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US9716100B2 (en) * 2014-03-14 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and electronic device
JP6616102B2 (ja) 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 記憶装置及び電子機器
US9489988B2 (en) 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP6917700B2 (ja) * 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
JPWO2017158465A1 (ja) * 2016-03-18 2019-02-14 株式会社半導体エネルギー研究所 記憶装置
US10008502B2 (en) * 2016-05-04 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
TWI602306B (zh) * 2016-07-05 2017-10-11 群創光電股份有限公司 陣列基板結構與顯示裝置
JP6963463B2 (ja) 2016-11-10 2021-11-10 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
JP2018206456A (ja) * 2017-06-07 2018-12-27 株式会社半導体エネルギー研究所 記憶装置
KR102526637B1 (ko) * 2017-12-27 2023-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치
US10950545B2 (en) * 2019-03-08 2021-03-16 International Business Machines Corporation Circuit wiring techniques for stacked transistor structures
CN115443505A (zh) * 2020-04-17 2022-12-06 株式会社半导体能源研究所 半导体装置
JPWO2023156877A1 (enExample) * 2022-02-18 2023-08-24
WO2025100106A1 (ja) * 2023-11-08 2025-05-15 ソニーグループ株式会社 信号処理装置、表示システム、及び、電子機器
WO2025159078A1 (ja) * 2024-01-24 2025-07-31 ソニーセミコンダクタソリューションズ株式会社 半導体素子、表示装置および電子機器

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JPH11265995A (ja) * 1998-03-17 1999-09-28 Mitsubishi Electric Corp 半導体記憶装置
JP2003281883A (ja) * 2002-03-26 2003-10-03 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその駆動方法
US7315466B2 (en) * 2004-08-04 2008-01-01 Samsung Electronics Co., Ltd. Semiconductor memory device and method for arranging and manufacturing the same
KR101861980B1 (ko) 2009-11-06 2018-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011114868A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011135999A1 (en) * 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
KR101853516B1 (ko) * 2010-07-27 2018-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8537600B2 (en) * 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP5743790B2 (ja) * 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 半導体装置
CN106298794B (zh) * 2010-08-27 2019-07-30 株式会社半导体能源研究所 存储器件及半导体器件
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
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TWI608486B (zh) * 2010-09-13 2017-12-11 半導體能源研究所股份有限公司 半導體裝置
TWI574259B (zh) * 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
KR101924231B1 (ko) * 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
JP2012142562A (ja) * 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US8686415B2 (en) 2010-12-17 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012151453A (ja) * 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd 半導体装置および半導体装置の駆動方法
US8659957B2 (en) * 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8779488B2 (en) * 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8848464B2 (en) * 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
TWI559683B (zh) * 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 半導體積體電路
CN103022012B (zh) * 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
US9099560B2 (en) * 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5981157B2 (ja) * 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 半導体装置
US9219164B2 (en) * 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9006024B2 (en) * 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2014027263A (ja) * 2012-06-15 2014-02-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP6224931B2 (ja) * 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP6298662B2 (ja) * 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
US9349418B2 (en) * 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6333580B2 (ja) * 2014-03-07 2018-05-30 株式会社半導体エネルギー研究所 半導体装置
US9443872B2 (en) * 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9716100B2 (en) 2014-03-14 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and electronic device
KR102252213B1 (ko) 2014-03-14 2021-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 시스템
US9887212B2 (en) 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device

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