JP6599622B2 - 半導体装置、及び電子機器 - Google Patents

半導体装置、及び電子機器 Download PDF

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Publication number
JP6599622B2
JP6599622B2 JP2015050214A JP2015050214A JP6599622B2 JP 6599622 B2 JP6599622 B2 JP 6599622B2 JP 2015050214 A JP2015050214 A JP 2015050214A JP 2015050214 A JP2015050214 A JP 2015050214A JP 6599622 B2 JP6599622 B2 JP 6599622B2
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JP
Japan
Prior art keywords
transistor
potential
film
node
oxide semiconductor
Prior art date
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Expired - Fee Related
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JP2015050214A
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English (en)
Japanese (ja)
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JP2015195074A5 (ja
JP2015195074A (ja
Inventor
知昭 熱海
修平 長塚
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2015050214A priority Critical patent/JP6599622B2/ja
Publication of JP2015195074A publication Critical patent/JP2015195074A/ja
Publication of JP2015195074A5 publication Critical patent/JP2015195074A5/ja
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2015050214A 2014-03-14 2015-03-13 半導体装置、及び電子機器 Expired - Fee Related JP6599622B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015050214A JP6599622B2 (ja) 2014-03-14 2015-03-13 半導体装置、及び電子機器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014051497 2014-03-14
JP2014051497 2014-03-14
JP2014069626 2014-03-28
JP2014069626 2014-03-28
JP2015050214A JP6599622B2 (ja) 2014-03-14 2015-03-13 半導体装置、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019182982A Division JP2020005002A (ja) 2014-03-14 2019-10-03 半導体装置

Publications (3)

Publication Number Publication Date
JP2015195074A JP2015195074A (ja) 2015-11-05
JP2015195074A5 JP2015195074A5 (ja) 2018-04-19
JP6599622B2 true JP6599622B2 (ja) 2019-10-30

Family

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Family Applications (6)

Application Number Title Priority Date Filing Date
JP2015050214A Expired - Fee Related JP6599622B2 (ja) 2014-03-14 2015-03-13 半導体装置、及び電子機器
JP2019182982A Withdrawn JP2020005002A (ja) 2014-03-14 2019-10-03 半導体装置
JP2020192366A Active JP7173710B2 (ja) 2014-03-14 2020-11-19 半導体装置
JP2022176807A Active JP7483830B2 (ja) 2014-03-14 2022-11-03 半導体装置
JP2024004955A Active JP7662853B2 (ja) 2014-03-14 2024-01-17 半導体装置
JP2025061542A Pending JP2025106380A (ja) 2014-03-14 2025-04-03 半導体装置

Family Applications After (5)

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JP2019182982A Withdrawn JP2020005002A (ja) 2014-03-14 2019-10-03 半導体装置
JP2020192366A Active JP7173710B2 (ja) 2014-03-14 2020-11-19 半導体装置
JP2022176807A Active JP7483830B2 (ja) 2014-03-14 2022-11-03 半導体装置
JP2024004955A Active JP7662853B2 (ja) 2014-03-14 2024-01-17 半導体装置
JP2025061542A Pending JP2025106380A (ja) 2014-03-14 2025-04-03 半導体装置

Country Status (3)

Country Link
US (1) US9716100B2 (enExample)
JP (6) JP6599622B2 (enExample)
KR (4) KR102378443B1 (enExample)

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US9716100B2 (en) * 2014-03-14 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and electronic device
JP6616102B2 (ja) 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 記憶装置及び電子機器
US9489988B2 (en) 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP6917700B2 (ja) * 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
JPWO2017158465A1 (ja) * 2016-03-18 2019-02-14 株式会社半導体エネルギー研究所 記憶装置
US10008502B2 (en) * 2016-05-04 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
TWI602306B (zh) * 2016-07-05 2017-10-11 群創光電股份有限公司 陣列基板結構與顯示裝置
JP6963463B2 (ja) 2016-11-10 2021-11-10 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
JP2018206456A (ja) * 2017-06-07 2018-12-27 株式会社半導体エネルギー研究所 記憶装置
WO2019130144A1 (ja) * 2017-12-27 2019-07-04 株式会社半導体エネルギー研究所 記憶装置
US10950545B2 (en) 2019-03-08 2021-03-16 International Business Machines Corporation Circuit wiring techniques for stacked transistor structures
CN115443505A (zh) * 2020-04-17 2022-12-06 株式会社半导体能源研究所 半导体装置
KR20240149947A (ko) * 2022-02-18 2024-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2025100106A1 (ja) * 2023-11-08 2025-05-15 ソニーグループ株式会社 信号処理装置、表示システム、及び、電子機器
WO2025159078A1 (ja) * 2024-01-24 2025-07-31 ソニーセミコンダクタソリューションズ株式会社 半導体素子、表示装置および電子機器

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Also Published As

Publication number Publication date
KR20150107672A (ko) 2015-09-23
JP2025106380A (ja) 2025-07-15
JP2021051823A (ja) 2021-04-01
JP2023015201A (ja) 2023-01-31
KR20230065967A (ko) 2023-05-12
KR102378443B1 (ko) 2022-03-25
KR102530582B1 (ko) 2023-05-10
JP7662853B2 (ja) 2025-04-15
JP7483830B2 (ja) 2024-05-15
JP2020005002A (ja) 2020-01-09
JP2024032795A (ja) 2024-03-12
JP7173710B2 (ja) 2022-11-16
US9716100B2 (en) 2017-07-25
KR20250043378A (ko) 2025-03-28
US20150263008A1 (en) 2015-09-17
KR20220038654A (ko) 2022-03-29
JP2015195074A (ja) 2015-11-05

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