IL156854A0 - A multiple use memory chip - Google Patents

A multiple use memory chip

Info

Publication number
IL156854A0
IL156854A0 IL15685403A IL15685403A IL156854A0 IL 156854 A0 IL156854 A0 IL 156854A0 IL 15685403 A IL15685403 A IL 15685403A IL 15685403 A IL15685403 A IL 15685403A IL 156854 A0 IL156854 A0 IL 156854A0
Authority
IL
Israel
Prior art keywords
memory chip
multiple use
use memory
chip
memory
Prior art date
Application number
IL15685403A
Other languages
English (en)
Original Assignee
Saifun Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saifun Semiconductors Ltd filed Critical Saifun Semiconductors Ltd
Publication of IL156854A0 publication Critical patent/IL156854A0/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
IL15685403A 2002-07-10 2003-07-09 A multiple use memory chip IL156854A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/191,451 US6917544B2 (en) 2002-07-10 2002-07-10 Multiple use memory chip

Publications (1)

Publication Number Publication Date
IL156854A0 true IL156854A0 (en) 2004-02-08

Family

ID=29735291

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15685403A IL156854A0 (en) 2002-07-10 2003-07-09 A multiple use memory chip

Country Status (4)

Country Link
US (5) US6917544B2 (xx)
EP (1) EP1381055A3 (xx)
JP (1) JP2004039233A (xx)
IL (1) IL156854A0 (xx)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190620B2 (en) * 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6917544B2 (en) * 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6963505B2 (en) * 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6967896B2 (en) * 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7142464B2 (en) * 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7057928B2 (en) * 2003-07-08 2006-06-06 Hewlett-Packard Development Company, L.P. System and method for erasing high-density non-volatile fast memory
WO2005094178A2 (en) 2004-04-01 2005-10-13 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US7158411B2 (en) * 2004-04-01 2007-01-02 Macronix International Co., Ltd. Integrated code and data flash memory
US7755938B2 (en) * 2004-04-19 2010-07-13 Saifun Semiconductors Ltd. Method for reading a memory array with neighbor effect cancellation
JP2005322109A (ja) * 2004-05-11 2005-11-17 Renesas Technology Corp Ｉｃカードモジュール
US7366025B2 (en) * 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US20060036803A1 (en) * 2004-08-16 2006-02-16 Mori Edan Non-volatile memory device controlled by a micro-controller
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7262999B2 (en) * 2004-11-24 2007-08-28 Macronix International Co., Ltd. System and method for preventing read margin degradation for a memory array
JP4628757B2 (ja) * 2004-11-26 2011-02-09 イノテック株式会社 半導体記憶装置
US7257025B2 (en) * 2004-12-09 2007-08-14 Saifun Semiconductors Ltd Method for reading non-volatile memory cells
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7786512B2 (en) 2005-07-18 2010-08-31 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8116142B2 (en) * 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
US7881123B2 (en) * 2005-09-23 2011-02-01 Macronix International Co., Ltd. Multi-operation mode nonvolatile memory
JP4892215B2 (ja) * 2005-09-28 2012-03-07 富士通セミコンダクター株式会社 半導体記憶装置
US7511333B2 (en) 2005-10-06 2009-03-31 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates and a connection region in the channel
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7710777B1 (en) 2006-12-20 2010-05-04 Marvell International Ltd. Semi-volatile NAND flash memory
WO2008113033A1 (en) * 2007-03-14 2008-09-18 Slacker, Inc. Systems and methods of utilizing multiple satellite transponders for data distribution
US7613042B2 (en) * 2007-11-05 2009-11-03 Spansion Llc Decoding system capable of reducing sector select area overhead for flash memory
US20090171650A1 (en) * 2007-12-27 2009-07-02 Unity Semiconductor Corporation Non-Volatile memories in interactive entertainment systems
US7645993B2 (en) * 2007-12-28 2010-01-12 Spansion, Llc Arrayed neutron detector with multi shielding allowing for discrimination between radiation types
KR101476773B1 (ko) * 2008-04-08 2014-12-29 삼성전자주식회사 가변 저항 메모리 장치를 포함하는 반도체 메모리 장치 및메모리 시스템
US7826267B2 (en) * 2008-05-23 2010-11-02 Silicon Storage Technology, Inc. Method and apparatus for reading and programming a non-volatile memory cell in a virtual ground array
JP2010033682A (ja) * 2008-07-31 2010-02-12 Panasonic Corp 不揮発性半導体記憶装置
JP5086933B2 (ja) * 2008-08-06 2012-11-28 株式会社東芝 不揮発性半導体記憶装置の駆動方法
US8471328B2 (en) 2010-07-26 2013-06-25 United Microelectronics Corp. Non-volatile memory and manufacturing method thereof
CN102693905B (zh) * 2011-03-22 2015-08-05 中芯国际集成电路制造(上海)有限公司 闪存单元及其浮栅的形成方法
US20130056641A1 (en) * 2011-09-01 2013-03-07 Massachusetts Institute Of Technology Solid-state neutron detector with gadolinium converter
WO2013079020A1 (en) * 2011-12-02 2013-06-06 Tsinghua University Nor flash memory array structure, mixed nonvolatile flash memory and memory system comprising the same
CN102544022B (zh) * 2012-01-05 2014-10-22 清华大学 一种混合非挥发快闪存储器及其存储系统
TWI494930B (zh) * 2012-05-03 2015-08-01 Macronix Int Co Ltd 記憶體裝置之數個操作
US9171846B2 (en) 2012-05-31 2015-10-27 Moon J. Kim Leakage and performance graded memory
US9430339B1 (en) 2012-12-27 2016-08-30 Marvell International Ltd. Method and apparatus for using wear-out blocks in nonvolatile memory
US11021620B2 (en) * 2014-02-28 2021-06-01 Sun Chemical Corporation Digital printing inks
TWI626658B (zh) * 2016-06-14 2018-06-11 旺宏電子股份有限公司 記憶體裝置及其操作方法
CN108509154B (zh) * 2018-03-31 2021-07-13 深圳忆联信息系统有限公司 一种根据坏块分布动态重组raid的方法和装置
JP2019220242A (ja) * 2018-06-21 2019-12-26 セイコーエプソン株式会社 不揮発性記憶装置、マイクロコンピューター及び電子機器

Family Cites Families (548)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1297899A (xx) 1970-10-02 1972-11-29
GB1392599A (en) 1971-07-28 1975-04-30 Mullard Ltd Semiconductor memory elements
US3881180A (en) 1971-11-30 1975-04-29 Texas Instruments Inc Non-volatile memory cell
US3895360A (en) * 1974-01-29 1975-07-15 Westinghouse Electric Corp Block oriented random access memory
US4016588A (en) 1974-12-27 1977-04-05 Nippon Electric Company, Ltd. Non-volatile semiconductor memory device
US4017888A (en) 1975-12-31 1977-04-12 International Business Machines Corporation Non-volatile metal nitride oxide semiconductor device
US4151021A (en) * 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM
US4145703A (en) 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor
US4173766A (en) 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory cell
US4173791A (en) 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory array
US4373248A (en) 1978-07-12 1983-02-15 Texas Instruments Incorporated Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like
DE2832388C2 (de) 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat
US4360900A (en) 1978-11-27 1982-11-23 Texas Instruments Incorporated Non-volatile semiconductor memory elements
US4247861A (en) 1979-03-09 1981-01-27 Rca Corporation High performance electrically alterable read-only memory (EAROM)
DE2923995C2 (de) 1979-06-13 1985-11-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von integrierten MOS-Schaltungen mit MOS-Transistoren und MNOS-Speichertransistoren in Silizium-Gate-Technologie
JPS5656677A (en) 1979-10-13 1981-05-18 Toshiba Corp Semiconductor memory device
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
DE2947350A1 (de) 1979-11-23 1981-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
US4342102A (en) 1980-06-18 1982-07-27 Signetics Corporation Semiconductor memory array
US4380057A (en) 1980-10-27 1983-04-12 International Business Machines Corporation Electrically alterable double dense memory
US4521796A (en) 1980-12-11 1985-06-04 General Instrument Corporation Memory implant profile for improved channel shielding in electrically alterable read only memory semiconductor device
DE3174858D1 (en) 1980-12-25 1986-07-24 Fujitsu Ltd Nonvolatile semiconductor memory device
US4448400A (en) 1981-07-13 1984-05-15 Eliyahou Harari Highly scalable dynamic RAM cell with self-signal amplification
US4404747A (en) 1981-07-29 1983-09-20 Schur, Inc. Knife and sheath assembly
US4389705A (en) * 1981-08-21 1983-06-21 Mostek Corporation Semiconductor memory circuit with depletion data transfer transistor
US4388705A (en) * 1981-10-01 1983-06-14 Mostek Corporation Semiconductor memory circuit
US4435786A (en) 1981-11-23 1984-03-06 Fairchild Camera And Instrument Corporation Self-refreshing memory cell
US4494016A (en) 1982-07-26 1985-01-15 Sperry Corporation High performance MESFET transistor for VLSI implementation
US4527257A (en) * 1982-08-25 1985-07-02 Westinghouse Electric Corp. Common memory gate non-volatile transistor memory
JPS5949022A (ja) * 1982-09-13 1984-03-21 Toshiba Corp 多値論理回路
US4613956A (en) 1983-02-23 1986-09-23 Texas Instruments Incorporated Floating gate memory with improved dielectric
US4769340A (en) 1983-11-28 1988-09-06 Exel Microelectronics, Inc. Method for making electrically programmable memory device by doping the floating gate by implant
US4725984A (en) 1984-02-21 1988-02-16 Seeq Technology, Inc. CMOS eprom sense amplifier
JPS60182174A (ja) 1984-02-28 1985-09-17 Nec Corp 不揮発性半導体メモリ
GB2157489A (en) 1984-03-23 1985-10-23 Hitachi Ltd A semiconductor integrated circuit memory device
KR930007195B1 (ko) 1984-05-23 1993-07-31 가부시끼가이샤 히다찌세이사꾸쇼 반도체 장치와 그 제조 방법
US5352620A (en) 1984-05-23 1994-10-04 Hitachi, Ltd. Method of making semiconductor device with memory cells and peripheral transistors
US4665426A (en) 1985-02-01 1987-05-12 Advanced Micro Devices, Inc. EPROM with ultraviolet radiation transparent silicon nitride passivation layer
JPH0770230B2 (ja) 1985-04-18 1995-07-31 日本電気株式会社 半導体メモリ
US4667217A (en) 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
JPH0831789B2 (ja) 1985-09-04 1996-03-27 沖電気工業株式会社 出力回路
US4742491A (en) * 1985-09-26 1988-05-03 Advanced Micro Devices, Inc. Memory cell having hot-hole injection erase mode
US4760555A (en) * 1986-04-21 1988-07-26 Texas Instruments Incorporated Memory array with an array reorganizer
JPH0828431B2 (ja) * 1986-04-22 1996-03-21 日本電気株式会社 半導体記憶装置
US4758869A (en) 1986-08-29 1988-07-19 Waferscale Integration, Inc. Nonvolatile floating gate transistor structure
US5168334A (en) 1987-07-31 1992-12-01 Texas Instruments, Incorporated Non-volatile semiconductor memory
US4780424A (en) 1987-09-28 1988-10-25 Intel Corporation Process for fabricating electrically alterable floating gate memory devices
US4870470A (en) * 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer
US4839705A (en) * 1987-12-16 1989-06-13 Texas Instruments Incorporated X-cell EEPROM array
JPH07120720B2 (ja) 1987-12-17 1995-12-20 三菱電機株式会社 不揮発性半導体記憶装置
US5159570A (en) 1987-12-22 1992-10-27 Texas Instruments Incorporated Four memory state EEPROM
US4888735A (en) * 1987-12-30 1989-12-19 Elite Semiconductor & Systems Int'l., Inc. ROM cell and array configuration
US5677867A (en) * 1991-06-12 1997-10-14 Hazani; Emanuel Memory with isolatable expandable bit lines
US4857770A (en) 1988-02-29 1989-08-15 Advanced Micro Devices, Inc. Output buffer arrangement for reducing chip noise without speed penalty
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US4941028A (en) * 1988-08-10 1990-07-10 Actel Corporation Structure for protecting thin dielectrics during processing
JPH0271493A (ja) * 1988-09-06 1990-03-12 Mitsubishi Electric Corp 半導体メモリ装置
US5042009A (en) * 1988-12-09 1991-08-20 Waferscale Integration, Inc. Method for programming a floating gate memory device
US5293563A (en) * 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin
US5844842A (en) 1989-02-06 1998-12-01 Hitachi, Ltd. Nonvolatile semiconductor memory device
US5120672A (en) 1989-02-22 1992-06-09 Texas Instruments Incorporated Fabricating a single level merged EEPROM cell having an ONO memory stack substantially spaced from the source region
US5142495A (en) 1989-03-10 1992-08-25 Intel Corporation Variable load for margin mode
DE3931596A1 (de) 1989-03-25 1990-10-04 Eurosil Electronic Gmbh Spannungsvervielfacherschaltung
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US4961010A (en) 1989-05-19 1990-10-02 National Semiconductor Corporation Output buffer for reducing switching induced noise
US5104819A (en) 1989-08-07 1992-04-14 Intel Corporation Fabrication of interpoly dielctric for EPROM-related technologies
US5027321A (en) * 1989-11-21 1991-06-25 Intel Corporation Apparatus and method for improved reading/programming of virtual ground EPROM arrays
US4992391A (en) 1989-11-29 1991-02-12 Advanced Micro Devices, Inc. Process for fabricating a control gate for a floating gate FET
KR100199258B1 (ko) 1990-02-09 1999-06-15 가나이 쓰도무 반도체집적회로장치
JP2733796B2 (ja) 1990-02-13 1998-03-30 セイコーインスツルメンツ株式会社 スイッチ回路
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
EP0461904A3 (en) * 1990-06-14 1992-09-09 Creative Integrated Systems, Inc. An improved semiconductor read-only vlsi memory
US5075245A (en) 1990-08-03 1991-12-24 Intel Corporation Method for improving erase characteristics of buried bit line flash EPROM devices without using sacrificial oxide growth and removal steps
US5289406A (en) 1990-08-28 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Read only memory for storing multi-data
US5117389A (en) * 1990-09-05 1992-05-26 Macronix International Co., Ltd. Flat-cell read-only-memory integrated circuit
KR920006991A (ko) 1990-09-25 1992-04-28 김광호 반도체메모리 장치의 고전압발생회로
US5081371A (en) 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
JP3002309B2 (ja) * 1990-11-13 2000-01-24 ウエハスケール インテグレーション， インコーポレイテッド 高速ｅｐｒｏｍアレイ
JP2987193B2 (ja) 1990-11-20 1999-12-06 富士通株式会社 半導体記憶装置
US5086325A (en) 1990-11-21 1992-02-04 Atmel Corporation Narrow width EEPROM with single diffusion electrode formation
US5094968A (en) 1990-11-21 1992-03-10 Atmel Corporation Fabricating a narrow width EEPROM with single diffusion electrode formation
US6002614A (en) 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
JP2612969B2 (ja) 1991-02-08 1997-05-21 シャープ株式会社 半導体装置の製造方法
JPH04311900A (ja) 1991-04-10 1992-11-04 Sharp Corp 半導体読み出し専用メモリ
JP2930440B2 (ja) 1991-04-15 1999-08-03 沖電気工業株式会社 半導体集積回路
US5424567A (en) 1991-05-15 1995-06-13 North American Philips Corporation Protected programmable transistor with reduced parasitic capacitances and method of fabrication
US5142496A (en) 1991-06-03 1992-08-25 Advanced Micro Devices, Inc. Method for measuring VT 's less than zero without applying negative voltages
US5245572A (en) 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
JP2965415B2 (ja) 1991-08-27 1999-10-18 松下電器産業株式会社 半導体記憶装置
EP0740854B1 (en) * 1991-08-29 2003-04-23 Hyundai Electronics Industries Co., Ltd. A self-aligned dual-bit split gate (dsg) flash eeprom cell
US5305262A (en) 1991-09-11 1994-04-19 Kawasaki Steel Corporation Semiconductor integrated circuit
US5175120A (en) 1991-10-11 1992-12-29 Micron Technology, Inc. Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors
JPH05110114A (ja) 1991-10-17 1993-04-30 Rohm Co Ltd 不揮発性半導体記憶素子
JP3358663B2 (ja) * 1991-10-25 2002-12-24 ローム株式会社 半導体記憶装置およびその記憶情報読出方法
US5357134A (en) 1991-10-31 1994-10-18 Rohm Co., Ltd. Nonvolatile semiconductor device having charge trap film containing silicon crystal grains
US5338954A (en) 1991-10-31 1994-08-16 Rohm Co., Ltd. Semiconductor memory device having an insulating film and a trap film joined in a channel region
JPH05129284A (ja) 1991-11-06 1993-05-25 Sony Corp プラズマＳｉＮ成膜条件の設定方法及び半導体装置の製造方法
US5260593A (en) 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction
US5490107A (en) 1991-12-27 1996-02-06 Fujitsu Limited Nonvolatile semiconductor memory
JP2564067B2 (ja) 1992-01-09 1996-12-18 株式会社東芝 センス回路を有する読み出し出力回路
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5293328A (en) 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
US5654568A (en) 1992-01-17 1997-08-05 Rohm Co., Ltd. Semiconductor device including nonvolatile memories
JP2851962B2 (ja) 1992-01-21 1999-01-27 シャープ株式会社 半導体読み出し専用メモリ
EP0552531B1 (en) * 1992-01-22 2000-08-16 Macronix International Co., Ltd. Non-volatile memory cell and array architecture
US5324675A (en) 1992-03-31 1994-06-28 Kawasaki Steel Corporation Method of producing semiconductor devices of a MONOS type
JPH05290584A (ja) * 1992-04-08 1993-11-05 Nec Corp 半導体記憶装置
US5657332A (en) 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US6236396B1 (en) * 1992-05-27 2001-05-22 Apple Computer, Inc. Method and apparatus for controlling a scheduler
JP2904645B2 (ja) 1992-05-28 1999-06-14 株式会社東芝 不揮発性半導体メモリ
WO1993024959A1 (en) 1992-05-29 1993-12-09 Citizen Watch Co., Ltd. Semiconductor nonvolatile storage device, semiconductor device, and its manufacture method
DE69334054T2 (de) 1992-06-15 2006-12-07 Fujitsu Ltd., Kawasaki Integrierte Halbleiterschaltung mit Eingangs/Ausgangschnittstelle geeignet für niedrige Amplituden
US5289412A (en) 1992-06-19 1994-02-22 Intel Corporation High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories
JPH065823A (ja) 1992-06-19 1994-01-14 Toshiba Corp 不揮発性半導体記憶装置及びその使用方法
US5315541A (en) * 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
GB9217743D0 (en) * 1992-08-19 1992-09-30 Philips Electronics Uk Ltd A semiconductor memory device
JP3036565B2 (ja) 1992-08-28 2000-04-24 日本電気株式会社 不揮発性半導体記憶装置の製造方法
US5412601A (en) 1992-08-31 1995-05-02 Nippon Steel Corporation Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell
US5450354A (en) * 1992-08-31 1995-09-12 Nippon Steel Corporation Non-volatile semiconductor memory device detachable deterioration of memory cells
US5450341A (en) 1992-08-31 1995-09-12 Nippon Steel Corporation Non-volatile semiconductor memory device having memory cells, each for at least three different data writable thereinto selectively and a method of using the same
US5412238A (en) 1992-09-08 1995-05-02 National Semiconductor Corporation Source-coupling, split-gate, virtual ground flash EEPROM array
US5280420A (en) 1992-10-02 1994-01-18 National Semiconductor Corporation Charge pump which operates on a low voltage power supply
US5579199A (en) 1992-11-26 1996-11-26 Sharp Kabushiki Kaisha Non-volatile memory device and a method for producing the same
US5377153A (en) * 1992-11-30 1994-12-27 Sgs-Thomson Microelectronics, Inc. Virtual ground read only memory circuit
US5418743A (en) 1992-12-07 1995-05-23 Nippon Steel Corporation Method of writing into non-volatile semiconductor memory
US5319593A (en) * 1992-12-21 1994-06-07 National Semiconductor Corp. Memory array with field oxide islands eliminated and method
JPH07114792A (ja) * 1993-10-19 1995-05-02 Mitsubishi Electric Corp 半導体記憶装置
US5436481A (en) 1993-01-21 1995-07-25 Nippon Steel Corporation MOS-type semiconductor device and method of making the same
JP3695539B2 (ja) 1993-02-01 2005-09-14 ナショナル・セミコンダクター・コーポレイション 超高密度交互金属仮想接地ｒｏｍ、ならびにその読み出し方法及びその製造方法
US5424978A (en) * 1993-03-15 1995-06-13 Nippon Steel Corporation Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same
ES2105149T3 (es) 1993-03-25 1997-10-16 Charlatte Sistema de regulacion de aire para un deposito hidroneumatico.
US5393701A (en) 1993-04-08 1995-02-28 United Microelectronics Corporation Layout design to eliminate process antenna effect
DE9305576U1 (de) 1993-04-14 1993-07-08 Holzrichter, Dieter, Dr.med., 2000 Hamburg Datenaufzeichnungsgerät
JP3317459B2 (ja) * 1993-04-30 2002-08-26 ローム株式会社 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法
US5335198A (en) 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
US5463586A (en) 1993-05-28 1995-10-31 Macronix International Co., Ltd. Erase and program verification circuit for non-volatile memory
JP3156447B2 (ja) 1993-06-17 2001-04-16 富士通株式会社 半導体集積回路
EP0631369A1 (en) 1993-06-21 1994-12-28 STMicroelectronics S.r.l. Voltage multiplier for high output current with a stabilized output voltage
US5350710A (en) 1993-06-24 1994-09-27 United Microelectronics Corporation Device for preventing antenna effect on circuit
US5400286A (en) 1993-08-17 1995-03-21 Catalyst Semiconductor Corp. Self-recovering erase scheme to enhance flash memory endurance
JP3463030B2 (ja) 1993-08-27 2003-11-05 株式会社東芝 不揮発性半導体記憶装置
US5563823A (en) 1993-08-31 1996-10-08 Macronix International Co., Ltd. Fast FLASH EPROM programming and pre-programming circuit design
US5553030A (en) 1993-09-10 1996-09-03 Intel Corporation Method and apparatus for controlling the output voltage provided by a charge pump circuit
US5477499A (en) 1993-10-13 1995-12-19 Advanced Micro Devices, Inc. Memory architecture for a three volt flash EEPROM
US5828601A (en) 1993-12-01 1998-10-27 Advanced Micro Devices, Inc. Programmed reference
JP3076185B2 (ja) * 1993-12-07 2000-08-14 日本電気株式会社 半導体メモリ装置及びその検査方法
US5440505A (en) 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
FR2715782B1 (fr) 1994-01-31 1996-03-22 Sgs Thomson Microelectronics Bascule bistable non volatile programmable, à état initial prédéfini, notamment pour circuit de redondance de mémoire.
FR2715758B1 (fr) 1994-01-31 1996-03-22 Sgs Thomson Microelectronics Bascule bistable non volatile programmable par la source, notamment pour circuit de redondance de mémoire.
JP3397427B2 (ja) 1994-02-02 2003-04-14 株式会社東芝 半導体記憶装置
US6005423A (en) 1994-02-10 1999-12-21 Xilinx, Inc. Low current power-on reset circuit
US5418176A (en) 1994-02-17 1995-05-23 United Microelectronics Corporation Process for producing memory devices having narrow buried N+ lines
WO1995024057A2 (en) 1994-03-03 1995-09-08 Rohm Corporation Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
US5436478A (en) 1994-03-16 1995-07-25 National Semiconductor Corporation Fast access AMG EPROM with segment select transistors which have an increased width
EP0678871B1 (en) 1994-03-22 2000-05-31 STMicroelectronics S.r.l. Memory array cell reading device
US5467308A (en) 1994-04-05 1995-11-14 Motorola Inc. Cross-point eeprom memory array
US5530803A (en) 1994-04-14 1996-06-25 Advanced Micro Devices, Inc. Method and apparatus for programming memory devices
US5568085A (en) 1994-05-16 1996-10-22 Waferscale Integration Inc. Unit for stabilizing voltage on a capacitive node
TW241394B (en) 1994-05-26 1995-02-21 Aplus Integrated Circuits Inc Flat-cell ROM and decoder
JP3725911B2 (ja) 1994-06-02 2005-12-14 株式会社ルネサステクノロジ 半導体装置
US5608679A (en) 1994-06-02 1997-03-04 Intel Corporation Fast internal reference cell trimming for flash EEPROM memory
US5523972A (en) * 1994-06-02 1996-06-04 Intel Corporation Method and apparatus for verifying the programming of multi-level flash EEPROM memory
EP0691729A3 (en) 1994-06-30 1996-08-14 Sgs Thomson Microelectronics Charge pump circuit with feedback control
EP0693781B1 (en) 1994-07-13 2002-10-02 United Microelectronics Corporation Grounding method for eliminating process antenna effect
EP0696050B1 (en) 1994-07-18 1998-10-14 STMicroelectronics S.r.l. EPROM and Flash-EEPROM non-volatile memory and method of manufacturing the same
US5508968A (en) 1994-08-12 1996-04-16 International Business Machines Corporation Dynamic random access memory persistent page implemented as processor register sets
US5822256A (en) 1994-09-06 1998-10-13 Intel Corporation Method and circuitry for usage of partially functional nonvolatile memory
KR100372905B1 (ko) 1994-09-13 2003-05-01 애질런트 테크놀로지스, 인크. 산화물영역보호장치
US5583808A (en) 1994-09-16 1996-12-10 National Semiconductor Corporation EPROM array segmented for high performance and method for controlling same
JP3730272B2 (ja) * 1994-09-17 2005-12-21 株式会社東芝 不揮発性半導体記憶装置
DE69429264T2 (de) * 1994-09-27 2002-06-13 Stmicroelectronics S.R.L., Agrate Brianza Byte-löschbares EEPROM, das mit einem mit einer einzigen Stromversorgung versehenen Flash-EPROM-System kompatibel ist
DE4434725C1 (de) 1994-09-28 1996-05-30 Siemens Ag Festwert-Speicherzellenanordnung und Verfahren zu deren Herstellung
US5619052A (en) 1994-09-29 1997-04-08 Macronix International Co., Ltd. Interpoly dielectric structure in EEPROM device
US5523251A (en) 1994-10-05 1996-06-04 United Microelectronics Corp. Method for fabricating a self aligned mask ROM
US5612642A (en) 1995-04-28 1997-03-18 Altera Corporation Power-on reset circuit with hysteresis
US5581252A (en) 1994-10-13 1996-12-03 Linear Technology Corporation Analog-to-digital conversion using comparator coupled capacitor digital-to-analog converters
US5694356A (en) 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
US5802268A (en) 1994-11-22 1998-09-01 Lucent Technologies Inc. Digital processor with embedded eeprom memory
US5537358A (en) * 1994-12-06 1996-07-16 National Semiconductor Corporation Flash memory having adaptive sensing and method
US5599727A (en) * 1994-12-15 1997-02-04 Sharp Kabushiki Kaisha Method for producing a floating gate memory device including implanting ions through an oxidized portion of the silicon film from which the floating gate is formed
US5661060A (en) * 1994-12-28 1997-08-26 National Semiconductor Corporation Method for forming field oxide regions
US5534804A (en) 1995-02-13 1996-07-09 Advanced Micro Devices, Inc. CMOS power-on reset circuit using hysteresis
CA2142644C (en) 1995-02-16 1996-11-26 Marc Etienne Bonneville Standby power circuit arrangement
DE19505293A1 (de) 1995-02-16 1996-08-22 Siemens Ag Mehrwertige Festwertspeicherzelle mit verbessertem Störabstand
US5801076A (en) 1995-02-21 1998-09-01 Advanced Micro Devices, Inc. Method of making non-volatile memory device having a floating gate with enhanced charge retention
US5518942A (en) 1995-02-22 1996-05-21 Alliance Semiconductor Corporation Method of making flash EPROM cell having improved erase characteristics by using a tilt angle implant
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5617357A (en) * 1995-04-07 1997-04-01 Advanced Micro Devices, Inc. Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
DE69524572T2 (de) 1995-04-28 2002-08-22 Stmicroelectronics S.R.L., Agrate Brianza Leseverstärkerschaltung für Halbleiterspeicheranordnungen
KR100187656B1 (ko) * 1995-05-16 1999-06-01 김주용 플래쉬 이이피롬 셀의 제조방법 및 그 프로그램 방법
US5656513A (en) * 1995-06-07 1997-08-12 Advanced Micro Devices, Inc. Nonvolatile memory cell formed using self aligned source implant
JP3807744B2 (ja) 1995-06-07 2006-08-09 マクロニクス インターナショナル カンパニイ リミテッド 可変プログラムパルス高及びパルス幅によるページモードフラッシュメモリ用自動プログラミングアルゴリズム
DE69528971D1 (de) 1995-06-30 2003-01-09 St Microelectronics Srl Herstellungsverfahren eines Schaltkreises, der nichtflüchtige Speicherzellen und Randtransistoren von mindestens zwei unterschiedlichen Typen enthält, und entsprechender IC
CA2226015A1 (en) * 1995-07-03 1997-01-23 Jeewika Chandanie Ranaweera Method of fabricating a fast programming flash e2prom cell
US5903031A (en) 1995-07-04 1999-05-11 Matsushita Electric Industrial Co., Ltd. MIS device, method of manufacturing the same, and method of diagnosing the same
EP0753859B1 (en) * 1995-07-14 2000-01-26 STMicroelectronics S.r.l. Method for setting the threshold voltage of a reference memory cell
JP3424427B2 (ja) 1995-07-27 2003-07-07 ソニー株式会社 不揮発性半導体メモリ装置
US5835935A (en) 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
US5696929A (en) 1995-10-03 1997-12-09 Intel Corporation Flash EEPROM main memory in a computer system
US5815435A (en) 1995-10-10 1998-09-29 Information Storage Devices, Inc. Storage cell for analog recording and playback
US6163048A (en) 1995-10-25 2000-12-19 Cypress Semiconductor Corporation Semiconductor non-volatile memory device having a NAND cell structure
US5760767A (en) * 1995-10-26 1998-06-02 Sony Corporation Method and apparatus for displaying in and out points during video editing
US5644531A (en) 1995-11-01 1997-07-01 Advanced Micro Devices, Inc. Program algorithm for low voltage single power supply flash memories
JPH09191111A (ja) 1995-11-07 1997-07-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100253868B1 (ko) 1995-11-13 2000-05-01 니시무로 타이죠 불휘발성 반도체기억장치
JP2982670B2 (ja) * 1995-12-12 1999-11-29 日本電気株式会社 不揮発性半導体記憶装置および記憶方法
JP3251164B2 (ja) * 1995-12-14 2002-01-28 シャープ株式会社 半導体装置及びその製造方法
US5677869A (en) 1995-12-14 1997-10-14 Intel Corporation Programming flash memory using strict ordering of states
US5633603A (en) 1995-12-26 1997-05-27 Hyundai Electronics Industries Co., Ltd. Data output buffer using pass transistors biased with a reference voltage and a precharged data input
KR100223747B1 (ko) 1995-12-28 1999-10-15 김영환 고속 저잡음 출력 버퍼
KR100359414B1 (ko) * 1996-01-25 2003-01-24 동경 엘렉트론 디바이스 주식회사 데이타독출/기록방법및그를이용한메모리제어장치및시스템
US5748534A (en) 1996-03-26 1998-05-05 Invox Technology Feedback loop for reading threshold voltage
US5920503A (en) * 1996-03-29 1999-07-06 Aplus Flash Technology, Inc. Flash memory with novel bitline decoder and sourceline latch
US5777923A (en) 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
US5672959A (en) 1996-04-12 1997-09-30 Micro Linear Corporation Low drop-out voltage regulator having high ripple rejection and low power consumption
EP0802569B1 (en) * 1996-04-15 2003-09-24 STMicroelectronics S.r.l. FLASH-EPROM integrated with EEPROM
JP3200012B2 (ja) 1996-04-19 2001-08-20 株式会社東芝 記憶システム
US5712815A (en) 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
US5663907A (en) 1996-04-25 1997-09-02 Bright Microelectronics, Inc. Switch driver circuit for providing small sector sizes for negative gate erase flash EEPROMS using a standard twin-well CMOS process
US5847441A (en) 1996-05-10 1998-12-08 Micron Technology, Inc. Semiconductor junction antifuse circuit
US5715193A (en) 1996-05-23 1998-02-03 Micron Quantum Devices, Inc. Flash memory system and method for monitoring the disturb effect on memory cell blocks due to high voltage conditions of other memory cell blocks
US5886927A (en) * 1996-06-11 1999-03-23 Nkk Corporation Nonvolatile memory device with verify function
US5683925A (en) 1996-06-13 1997-11-04 Waferscale Integration Inc. Manufacturing method for ROM array with minimal band-to-band tunneling
DE69702256T2 (de) * 1996-06-24 2001-01-18 Advanced Micro Devices, Inc. Verfahren für einen merhfachen, bits pro zelle flash eeprom, speicher mit seitenprogrammierungsmodus und leseverfahren
JP2882370B2 (ja) 1996-06-28 1999-04-12 日本電気株式会社 半導体記憶装置
US6156149A (en) 1997-05-07 2000-12-05 Applied Materials, Inc. In situ deposition of a dielectric oxide layer and anti-reflective coating
KR100265574B1 (ko) 1996-06-29 2000-09-15 김영환 반도체 메모리장치의 감지증폭기
US5793079A (en) * 1996-07-22 1998-08-11 Catalyst Semiconductor, Inc. Single transistor non-volatile electrically alterable semiconductor memory device
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
JP2917924B2 (ja) 1996-07-30 1999-07-12 日本電気株式会社 不揮発性半導体記憶装置
US5933602A (en) * 1996-07-31 1999-08-03 Novell, Inc. System for selecting command packet and corresponding response packet from communication stream of packets by monitoring packets sent between nodes on network
WO1998006101A1 (de) 1996-08-01 1998-02-12 Siemens Aktiengesellschaft Verfahren zum betrieb einer speicherzellenanordnung
US6037627A (en) 1996-08-02 2000-03-14 Seiko Instruments Inc. MOS semiconductor device
US5787484A (en) 1996-08-08 1998-07-28 Micron Technology, Inc. System and method which compares data preread from memory cells to data to be written to the cells
JP3709246B2 (ja) 1996-08-27 2005-10-26 株式会社日立製作所 半導体集積回路
US5717635A (en) 1996-08-27 1998-02-10 International Business Machines Corporation High density EEPROM for solid state file
TW338165B (en) 1996-09-09 1998-08-11 Sony Co Ltd Semiconductor nand type flash memory with incremental step pulse programming
US5760634A (en) 1996-09-12 1998-06-02 United Microelectronics Corporation High speed, low noise output buffer
US5777919A (en) * 1996-09-13 1998-07-07 Holtek Microelectronics, Inc. Select gate enhanced high density read-only-memory device
FR2753579B1 (fr) 1996-09-19 1998-10-30 Sgs Thomson Microelectronics Circuit electronique pourvu d'un dispositif de neutralisation
US5873113A (en) 1996-09-24 1999-02-16 Altera Corporation System and method for programming eprom cells using shorter duration pulse(s) in repeating the programming process of a particular cell
JP3930074B2 (ja) 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
US5808506A (en) 1996-10-01 1998-09-15 Information Storage Devices, Inc. MOS charge pump generation and regulation method and apparatus
US5812456A (en) * 1996-10-01 1998-09-22 Microchip Technology Incorporated Switched ground read for EPROM memory array
EP0836268B1 (en) 1996-10-11 2002-02-06 STMicroelectronics S.r.l. Improved positive charge pump
US5764568A (en) 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
US6078518A (en) 1998-02-25 2000-06-20 Micron Technology, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
JPH10133754A (ja) 1996-10-28 1998-05-22 Fujitsu Ltd レギュレータ回路及び半導体集積回路装置
US5886561A (en) 1996-11-18 1999-03-23 Waferscale Integration, Inc. Backup battery switch
US5774395A (en) 1996-11-27 1998-06-30 Advanced Micro Devices, Inc. Electrically erasable reference cell for accurately determining threshold voltage of a non-volatile memory at a plurality of threshold voltage levels
US5717632A (en) * 1996-11-27 1998-02-10 Advanced Micro Devices, Inc. Apparatus and method for multiple-level storage in non-volatile memories
TW367503B (en) 1996-11-29 1999-08-21 Sanyo Electric Co Non-volatile semiconductor device
TW318283B (en) 1996-12-09 1997-10-21 United Microelectronics Corp Multi-level read only memory structure and manufacturing method thereof
US6418506B1 (en) 1996-12-31 2002-07-09 Intel Corporation Integrated circuit memory and method for transferring data using a volatile memory to buffer data for a nonvolatile memory array
EP0855788B1 (en) 1997-01-23 2005-06-22 STMicroelectronics S.r.l. NMOS negative charge pump
US6130574A (en) 1997-01-24 2000-10-10 Siemens Aktiengesellschaft Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump
TW347581B (en) 1997-02-05 1998-12-11 United Microelectronics Corp Process for fabricating read-only memory cells
IT1289933B1 (it) 1997-02-20 1998-10-19 Sgs Thomson Microelectronics Dispositivo di memoria con matrice di celle di memoria in triplo well e relativo procedimento di fabbricazione
JP3532725B2 (ja) 1997-02-27 2004-05-31 株式会社東芝 半導体集積回路
US6107862A (en) 1997-02-28 2000-08-22 Seiko Instruments Inc. Charge pump circuit
US5870335A (en) * 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
US6028324A (en) 1997-03-07 2000-02-22 Taiwan Semiconductor Manufacturing Company Test structures for monitoring gate oxide defect densities and the plasma antenna effect
JPH10261292A (ja) 1997-03-18 1998-09-29 Nec Corp 不揮発性半導体記憶装置の消去方法
US6190966B1 (en) * 1997-03-25 2001-02-20 Vantis Corporation Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration
JP3920415B2 (ja) 1997-03-31 2007-05-30 三洋電機株式会社 不揮発性半導体メモリ装置
JP4253052B2 (ja) 1997-04-08 2009-04-08 株式会社東芝 半導体装置
US6252799B1 (en) 1997-04-11 2001-06-26 Programmable Silicon Solutions Device with embedded flash and EEPROM memories
TW381325B (en) 1997-04-15 2000-02-01 United Microelectronics Corp Three dimensional high density deep trench ROM and the manufacturing method thereof
US5880620A (en) 1997-04-22 1999-03-09 Xilinx, Inc. Pass gate circuit with body bias control
US5966603A (en) 1997-06-11 1999-10-12 Saifun Semiconductors Ltd. NROM fabrication method with a periphery portion
US6297096B1 (en) 1997-06-11 2001-10-02 Saifun Semiconductors Ltd. NROM fabrication method
US5805500A (en) 1997-06-18 1998-09-08 Sgs-Thomson Microelectronics S.R.L. Circuit and method for generating a read reference signal for nonvolatile memory cells
JP3189740B2 (ja) 1997-06-20 2001-07-16 日本電気株式会社 不揮発性半導体メモリのデータ修復方法
JP3039458B2 (ja) 1997-07-07 2000-05-08 日本電気株式会社 不揮発性半導体メモリ
JP3765163B2 (ja) 1997-07-14 2006-04-12 ソニー株式会社 レベルシフト回路
US6219050B1 (en) * 1997-07-16 2001-04-17 Compuware Corporation Bounce diagram: a user interface for graphical exploration of packet trace information
US6031263A (en) * 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6000006A (en) 1997-08-25 1999-12-07 Bit Microsystems, Inc. Unified re-map and cache-index table with dual write-counters for wear-leveling of non-volatile flash RAM mass storage
US6064251A (en) 1997-08-27 2000-05-16 Integrated Silicon Solution, Inc. System and method for a low voltage charge pump with large output voltage range
JP3951443B2 (ja) 1997-09-02 2007-08-01 ソニー株式会社 不揮発性半導体記憶装置及びその書き込み方法
US5926409A (en) 1997-09-05 1999-07-20 Information Storage Devices, Inc. Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application
US5825683A (en) 1997-10-29 1998-10-20 Utron Technology Inc. Folded read-only memory
JP3322828B2 (ja) 1997-10-31 2002-09-09 シャープ株式会社 半導体記憶装置
WO1999025033A1 (en) 1997-11-12 1999-05-20 Deka Products Limited Partnership Piezo-electric actuator operable in an electrolytic fluid
US5940332A (en) * 1997-11-13 1999-08-17 Stmicroelectronics, Inc. Programmed memory with improved speed and power consumption
US5963412A (en) 1997-11-13 1999-10-05 Advanced Micro Devices, Inc. Process induced charging damage control device
US5867429A (en) 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US6281545B1 (en) 1997-11-20 2001-08-28 Taiwan Semiconductor Manufacturing Company Multi-level, split-gate, flash memory cell
IT1296486B1 (it) 1997-11-21 1999-06-25 Ses Thomson Microelectronics S Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash.
JP3599541B2 (ja) * 1997-11-27 2004-12-08 シャープ株式会社 不揮発性半導体記憶装置
US5949728A (en) 1997-12-12 1999-09-07 Scenix Semiconductor, Inc. High speed, noise immune, single ended sensing scheme for non-volatile memories
US6633496B2 (en) 1997-12-12 2003-10-14 Saifun Semiconductors Ltd. Symmetric architecture for memory cells having widely spread metal bit lines
US5963465A (en) 1997-12-12 1999-10-05 Saifun Semiconductors, Ltd. Symmetric segmented memory array architecture
US6633499B1 (en) 1997-12-12 2003-10-14 Saifun Semiconductors Ltd. Method for reducing voltage drops in symmetric array architectures
US6020241A (en) 1997-12-22 2000-02-01 Taiwan Semiconductor Manufacturing Company Post metal code engineering for a ROM
US6034433A (en) 1997-12-23 2000-03-07 Intel Corporation Interconnect structure for protecting a transistor gate from charge damage
KR100327421B1 (ko) 1997-12-31 2002-07-27 주식회사 하이닉스반도체 비휘발성 메모리 소자의 프로그램 시스템 및 그의 프로그램 방법
US6306653B1 (en) 1998-01-20 2001-10-23 Codon Diagnostics, Llc Detection and treatment of breast disease
US6195196B1 (en) 1998-03-13 2001-02-27 Fuji Photo Film Co., Ltd. Array-type exposing device and flat type display incorporating light modulator and driving method thereof
US5946258A (en) 1998-03-16 1999-08-31 Intel Corporation Pump supply self regulation for flash memory cell pair reference circuit
US6064226A (en) 1998-03-17 2000-05-16 Vanguard International Semiconductor Corporation Multiple input/output level interface input receiver
JP3580693B2 (ja) 1998-03-19 2004-10-27 シャープ株式会社 チャージ・ポンプ回路
KR100339024B1 (ko) 1998-03-28 2002-09-18 주식회사 하이닉스반도체 플래쉬메모리장치의센스앰프회로
US6181697B1 (en) * 1998-03-31 2001-01-30 At&T Corp. Method for a unicast endpoint client to access a multicast internet protocol (IP) session and to serve as a redistributor of such session
US6243289B1 (en) * 1998-04-08 2001-06-05 Micron Technology Inc. Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
JP3346274B2 (ja) 1998-04-27 2002-11-18 日本電気株式会社 不揮発性半導体記憶装置
FR2778012B1 (fr) 1998-04-28 2001-09-28 Sgs Thomson Microelectronics Dispositif et procede de lecture de cellules de memoire eeprom
US6030871A (en) 1998-05-05 2000-02-29 Saifun Semiconductors Ltd. Process for producing two bit ROM cell utilizing angled implant
US6188211B1 (en) 1998-05-13 2001-02-13 Texas Instruments Incorporated Current-efficient low-drop-out voltage regulator with improved load regulation and frequency response
US6348711B1 (en) 1998-05-20 2002-02-19 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
US6215148B1 (en) * 1998-05-20 2001-04-10 Saifun Semiconductors Ltd. NROM cell with improved programming, erasing and cycling
US6063666A (en) 1998-06-16 2000-05-16 Advanced Micro Devices, Inc. RTCVD oxide and N2 O anneal for top oxide of ONO film
US6034403A (en) 1998-06-25 2000-03-07 Acer Semiconductor Manufacturing, Inc. High density flat cell mask ROM
US6094095A (en) 1998-06-29 2000-07-25 Cypress Semiconductor Corp. Efficient pump for generating voltages above and/or below operating voltages
US6308485B1 (en) 1998-06-29 2001-10-30 Stora Kopparbergs Bergslags Ab Panel and method for mounting the same
JP2000021183A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 半導体不揮発性メモリ
JP3999900B2 (ja) 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
US6285246B1 (en) 1998-09-15 2001-09-04 California Micro Devices, Inc. Low drop-out regulator capable of functioning in linear and saturated regions of output driver
EP0987715B1 (en) 1998-09-15 2005-02-09 STMicroelectronics S.r.l. Method for maintaining the memory of non-volatile memory cells
JP3456904B2 (ja) 1998-09-16 2003-10-14 松下電器産業株式会社 突入電流抑制手段を備えた電源回路、およびこの電源回路を備えた集積回路
US5991202A (en) 1998-09-24 1999-11-23 Advanced Micro Devices, Inc. Method for reducing program disturb during self-boosting in a NAND flash memory
US6205059B1 (en) 1998-10-05 2001-03-20 Advanced Micro Devices Method for erasing flash electrically erasable programmable read-only memory (EEPROM)
US6219290B1 (en) 1998-10-14 2001-04-17 Macronix International Co., Ltd. Memory cell sense amplifier
US6044019A (en) 1998-10-23 2000-03-28 Sandisk Corporation Non-volatile memory with improved sensing and method therefor
US6374337B1 (en) 1998-11-17 2002-04-16 Lexar Media, Inc. Data pipelining method and apparatus for memory control circuit
JP3554497B2 (ja) 1998-12-08 2004-08-18 シャープ株式会社 チャージポンプ回路
US6214666B1 (en) 1998-12-18 2001-04-10 Vantis Corporation Method of forming a non-volatile memory device
US6215697B1 (en) 1999-01-14 2001-04-10 Macronix International Co., Ltd. Multi-level memory cell device and method for self-converged programming
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6157570A (en) 1999-02-04 2000-12-05 Tower Semiconductor Ltd. Program/erase endurance of EEPROM memory cells
US6133095A (en) 1999-02-04 2000-10-17 Saifun Semiconductors Ltd. Method for creating diffusion areas for sources and drains without an etch step
US6181597B1 (en) * 1999-02-04 2001-01-30 Tower Semiconductor Ltd. EEPROM array using 2-bit non-volatile memory cells with serial read operations
US6081456A (en) * 1999-02-04 2000-06-27 Tower Semiconductor Ltd. Bit line control circuit for a memory array using 2-bit non-volatile memory cells
US6233180B1 (en) 1999-02-04 2001-05-15 Saifun Semiconductors Ltd. Device for determining the validity of word line conditions and for delaying data sensing operation
US6134156A (en) 1999-02-04 2000-10-17 Saifun Semiconductors Ltd. Method for initiating a retrieval procedure in virtual ground arrays
US6128226A (en) 1999-02-04 2000-10-03 Saifun Semiconductors Ltd. Method and apparatus for operating with a close to ground signal
US6256231B1 (en) 1999-02-04 2001-07-03 Tower Semiconductor Ltd. EEPROM array using 2-bit non-volatile memory cells and method of implementing same
US6346442B1 (en) * 1999-02-04 2002-02-12 Tower Semiconductor Ltd. Methods for fabricating a semiconductor chip having CMOS devices and a fieldless array
US6147904A (en) 1999-02-04 2000-11-14 Tower Semiconductor Ltd. Redundancy method and structure for 2-bit non-volatile memory cells
US6108240A (en) 1999-02-04 2000-08-22 Tower Semiconductor Ltd. Implementation of EEPROM using intermediate gate voltage to avoid disturb conditions
US6075724A (en) 1999-02-22 2000-06-13 Vantis Corporation Method for sorting semiconductor devices having a plurality of non-volatile memory cells
US6044022A (en) 1999-02-26 2000-03-28 Tower Semiconductor Ltd. Programmable configuration for EEPROMS including 2-bit non-volatile memory cell arrays
US6278694B1 (en) * 1999-04-16 2001-08-21 Concord Communications Inc. Collecting and reporting monitoring data from remote network probes
US6208557B1 (en) 1999-05-21 2001-03-27 National Semiconductor Corporation EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming
US6084794A (en) 1999-05-28 2000-07-04 Winbond Electronics Corp. High speed flat-cell mask ROM structure with select lines
TW466576B (en) 1999-06-15 2001-12-01 Ebara Corp Substrate processing apparatus
US6154081A (en) 1999-06-15 2000-11-28 Delphi Technologies, Inc. Load circuit having extended reverse voltage protection
US6337502B1 (en) 1999-06-18 2002-01-08 Saifun Semicinductors Ltd. Method and circuit for minimizing the charging effect during manufacture of semiconductor devices
EP1067557B1 (en) * 1999-06-22 2005-02-02 STMicroelectronics S.r.l. Flash compatible EEPROM
KR100328359B1 (ko) 1999-06-22 2002-03-13 윤종용 기판 전압 바운싱을 최소화할 수 있는 플래시 메모리 장치 및그것의 프로그램 방법
US6218695B1 (en) * 1999-06-28 2001-04-17 Tower Semiconductor Ltd. Area efficient column select circuitry for 2-bit non-volatile memory cells
US6529954B1 (en) * 1999-06-29 2003-03-04 Wandell & Goltermann Technologies, Inc. Knowledge based expert analysis system
US6108241A (en) 1999-07-01 2000-08-22 Micron Technology, Inc. Leakage detection in flash memory cell
DE69911591D1 (de) 1999-07-22 2003-10-30 St Microelectronics Srl Leseschaltung für einen nichtflüchtigen Speicher
US6469935B2 (en) 1999-08-05 2002-10-22 Halo Lsi Design & Device Technology, Inc. Array architecture nonvolatile memory and its operation methods
JP2001051730A (ja) 1999-08-05 2001-02-23 Fujitsu Ltd スイッチ回路及びシリーズレギュレータ
JP3912937B2 (ja) 1999-08-10 2007-05-09 スパンション インク 非導電性のチャージトラップゲートを利用した多ビット不揮発性メモリ
US6122198A (en) 1999-08-13 2000-09-19 Advanced Micro Devices, Inc. Bit by bit APDE verify for flash memory applications
US6353356B1 (en) 1999-08-30 2002-03-05 Micron Technology, Inc. High voltage charge pump circuits
US6287917B1 (en) 1999-09-08 2001-09-11 Advanced Micro Devices, Inc. Process for fabricating an MNOS flash memory device
JP4091221B2 (ja) 1999-09-10 2008-05-28 株式会社東芝 不揮発性半導体記憶装置
JP3348432B2 (ja) 1999-09-14 2002-11-20 日本電気株式会社 半導体装置および半導体記憶装置
US6297974B1 (en) 1999-09-27 2001-10-02 Intel Corporation Method and apparatus for reducing stress across capacitors used in integrated circuits
US6181605B1 (en) 1999-10-06 2001-01-30 Advanced Micro Devices, Inc. Global erase/program verification apparatus and method
JP3829161B2 (ja) 1999-10-14 2006-10-04 スパンション インク 多ビット情報を記録する不揮発性メモリ回路
US6331950B1 (en) 1999-10-19 2001-12-18 Fujitsu Limited Write protect input implementation for a simultaneous operation flash memory device
US6297143B1 (en) 1999-10-25 2001-10-02 Advanced Micro Devices, Inc. Process for forming a bit-line in a MONOS device
US6265268B1 (en) 1999-10-25 2001-07-24 Advanced Micro Devices, Inc. High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device
US6175523B1 (en) * 1999-10-25 2001-01-16 Advanced Micro Devices, Inc Precharging mechanism and method for NAND-based flash memory devices
US6458677B1 (en) 1999-10-25 2002-10-01 Advanced Micro Devices, Inc. Process for fabricating an ONO structure
US6429063B1 (en) 1999-10-26 2002-08-06 Saifun Semiconductors Ltd. NROM cell with generally decoupled primary and secondary injection
IT1308856B1 (it) 1999-10-29 2002-01-11 St Microelectronics Srl Circuito di lettura per una memoria non volatile.
US6436766B1 (en) 1999-10-29 2002-08-20 Advanced Micro Devices, Inc. Process for fabricating high density memory cells using a polysilicon hard mask
JP2001143487A (ja) 1999-11-15 2001-05-25 Nec Corp 半導体記憶装置
US6272047B1 (en) 1999-12-17 2001-08-07 Micron Technology, Inc. Flash memory cell
EP1177490A1 (en) 1999-12-21 2002-02-06 Koninklijke Philips Electronics N.V. Voltage regulator provided with a current limiter
US6828638B2 (en) 1999-12-22 2004-12-07 Intel Corporation Decoupling capacitors for thin gate oxides
JP4360736B2 (ja) 2000-01-27 2009-11-11 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US6222768B1 (en) * 2000-01-28 2001-04-24 Advanced Micro Devices, Inc. Auto adjusting window placement scheme for an NROM virtual ground array
US6201737B1 (en) 2000-01-28 2001-03-13 Advanced Micro Devices, Inc. Apparatus and method to characterize the threshold distribution in an NROM virtual ground array
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6261904B1 (en) * 2000-02-10 2001-07-17 Advanced Micro Devices, Inc. Dual bit isolation scheme for flash devices
TW476179B (en) 2000-02-11 2002-02-11 Winbond Electronics Corp Charge pump circuit applied in low supply voltage
US6410388B1 (en) 2000-02-15 2002-06-25 Advanced Micro Devices, Inc. Process for optimizing pocket implant profile by RTA implant annealing for a non-volatile semiconductor device
US6438031B1 (en) 2000-02-16 2002-08-20 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a substrate bias
US6266281B1 (en) 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
US6215702B1 (en) 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
US6343033B1 (en) 2000-02-25 2002-01-29 Advanced Micro Devices, Inc. Variable pulse width memory programming
US6205056B1 (en) 2000-03-14 2001-03-20 Advanced Micro Devices, Inc. Automated reference cell trimming verify
US6240040B1 (en) 2000-03-15 2001-05-29 Advanced Micro Devices, Inc. Multiple bank simultaneous operation for a flash memory
US6458656B1 (en) 2000-03-16 2002-10-01 Advanced Micro Devices, Inc. Process for creating a flash memory cell using a photoresist flow operation
US6593942B1 (en) * 2000-03-31 2003-07-15 Matsushita Electric Industrial Co., Ltd. Event programming guide
JP2001297316A (ja) 2000-04-14 2001-10-26 Mitsubishi Electric Corp メモリカード及びその制御方法
US6396741B1 (en) 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6490204B2 (en) 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
US6928001B2 (en) 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
JP4002712B2 (ja) 2000-05-15 2007-11-07 スパンション エルエルシー 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ保持方法
US6417081B1 (en) * 2000-05-16 2002-07-09 Advanced Micro Devices, Inc. Process for reduction of capacitance of a bitline for a non-volatile memory cell
US6593606B1 (en) * 2000-05-16 2003-07-15 Advanced Micro Devices, Inc. Staggered bitline strapping of a non-volatile memory cell
US6275414B1 (en) * 2000-05-16 2001-08-14 Advanced Micro Devices, Inc. Uniform bitline strapping of a non-volatile memory cell
US6538270B1 (en) * 2000-05-16 2003-03-25 Advanced Micro Devices, Inc. Staggered bitline strapping of a non-volatile memory cell
JP3871853B2 (ja) 2000-05-26 2007-01-24 株式会社ルネサステクノロジ 半導体装置及びその動作方法
JP2001357686A (ja) 2000-06-13 2001-12-26 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3653449B2 (ja) 2000-06-15 2005-05-25 シャープ株式会社 不揮発性半導体記憶装置
US6618290B1 (en) 2000-06-23 2003-09-09 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a baking process
US6292394B1 (en) 2000-06-29 2001-09-18 Saifun Semiconductors Ltd. Method for programming of a semiconductor memory cell
US6519182B1 (en) 2000-07-10 2003-02-11 Advanced Micro Devices, Inc. Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structure
JP4707803B2 (ja) 2000-07-10 2011-06-22 エルピーダメモリ株式会社 エラーレート判定方法と半導体集積回路装置
TW503528B (en) 2000-07-12 2002-09-21 Koninkl Philips Electronics Nv Semiconductor device
JP2002050705A (ja) 2000-08-01 2002-02-15 Fujitsu Ltd 半導体記憶装置及びその製造方法
KR100597060B1 (ko) 2000-08-03 2006-07-06 후지쯔 가부시끼가이샤 비휘발성 반도체 기억 장치 및 데이터 판독 방법
US6708292B1 (en) * 2000-08-18 2004-03-16 Network Associates, Inc. System, method and software for protocol analyzer remote buffer management
US6562683B1 (en) 2000-08-31 2003-05-13 Advanced Micro Devices, Inc. Bit-line oxidation by removing ONO oxide prior to bit-line implant
US6246555B1 (en) 2000-09-06 2001-06-12 Prominenet Communications Inc. Transient current and voltage protection of a voltage regulator
US6356469B1 (en) 2000-09-14 2002-03-12 Fairchild Semiconductor Corporation Low voltage charge pump employing optimized clock amplitudes
US6537881B1 (en) 2000-10-16 2003-03-25 Advanced Micro Devices, Inc. Process for fabricating a non-volatile memory device
US6583479B1 (en) 2000-10-16 2003-06-24 Advanced Micro Devices, Inc. Sidewall NROM and method of manufacture thereof for non-volatile memory cells
JP4051175B2 (ja) 2000-11-17 2008-02-20 スパンション エルエルシー 不揮発性半導体メモリ装置および製造方法
US6465306B1 (en) * 2000-11-28 2002-10-15 Advanced Micro Devices, Inc. Simultaneous formation of charge storage and bitline to wordline isolation
US6433624B1 (en) 2000-11-30 2002-08-13 Intel Corporation Threshold voltage generation circuit
JP2002174868A (ja) * 2000-12-07 2002-06-21 Fuji Photo Film Co Ltd 放射線画像情報読取装置
JP2002184190A (ja) 2000-12-11 2002-06-28 Toshiba Corp 不揮発性半導体記憶装置
US6525696B2 (en) 2000-12-20 2003-02-25 Radio Frequency Systems, Inc. Dual band antenna using a single column of elliptical vivaldi notches
EP1217744B1 (en) 2000-12-21 2004-03-24 STMicroelectronics S.r.l. An output buffer with constant switching current
WO2002050843A1 (fr) 2000-12-21 2002-06-27 Fujitsu Limited Memoire a semi-conducteurs non volatile et procede d'effacement
TW490675B (en) 2000-12-22 2002-06-11 Macronix Int Co Ltd Control method of multi-stated NROM
US6452438B1 (en) 2000-12-28 2002-09-17 Intel Corporation Triple well no body effect negative charge pump
JP3846293B2 (ja) 2000-12-28 2006-11-15 日本電気株式会社 帰還型増幅回路及び駆動回路
JP2002216496A (ja) 2001-01-16 2002-08-02 Umc Japan 半導体メモリ装置
US6449190B1 (en) 2001-01-17 2002-09-10 Advanced Micro Devices, Inc. Adaptive reference cells for a memory device
JP2002216488A (ja) 2001-01-18 2002-08-02 Iwate Toshiba Electronics Co Ltd 半導体記憶装置
US6614692B2 (en) 2001-01-18 2003-09-02 Saifun Semiconductors Ltd. EEPROM array and method for operation thereof
US6445030B1 (en) 2001-01-30 2002-09-03 Advanced Micro Devices, Inc. Flash memory erase speed by fluorine implant or fluorination
US6567303B1 (en) 2001-01-31 2003-05-20 Advanced Micro Devices, Inc. Charge injection
JP3930256B2 (ja) 2001-02-07 2007-06-13 スパンション エルエルシー 半導体装置及びその製造方法
US6348381B1 (en) 2001-02-21 2002-02-19 Macronix International Co., Ltd. Method for forming a nonvolatile memory with optimum bias condition
JP4467815B2 (ja) 2001-02-26 2010-05-26 富士通マイクロエレクトロニクス株式会社 不揮発性半導体メモリの読み出し動作方法および不揮発性半導体メモリ
US6738289B2 (en) 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
US6456533B1 (en) 2001-02-28 2002-09-24 Advanced Micro Devices, Inc. Higher program VT and faster programming rates based on improved erase methods
US6307784B1 (en) 2001-02-28 2001-10-23 Advanced Micro Devices Negative gate erase
US6442074B1 (en) 2001-02-28 2002-08-27 Advanced Micro Devices, Inc. Tailored erase method using higher program VT and higher negative gate erase
US6528390B2 (en) 2001-03-02 2003-03-04 Advanced Micro Devices, Inc. Process for fabricating a non-volatile memory device
DE10110150A1 (de) 2001-03-02 2002-09-19 Infineon Technologies Ag Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray
US6426898B1 (en) 2001-03-05 2002-07-30 Micron Technology, Inc. Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells
US6351415B1 (en) 2001-03-28 2002-02-26 Tower Semiconductor Ltd. Symmetrical non-volatile memory array architecture without neighbor effect
JP2002299473A (ja) * 2001-03-29 2002-10-11 Fujitsu Ltd 半導体記憶装置及びその駆動方法
US6535434B2 (en) 2001-04-05 2003-03-18 Saifun Semiconductors Ltd. Architecture and scheme for a non-strobed read sequence
US20020145465A1 (en) 2001-04-05 2002-10-10 Joseph Shor Efficient charge pump apparatus and method for operating the same
US6577514B2 (en) 2001-04-05 2003-06-10 Saifun Semiconductors Ltd. Charge pump with constant boosted output voltage
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6665769B2 (en) 2001-04-05 2003-12-16 Saifun Semiconductors Ltd. Method and apparatus for dynamically masking an N-bit memory array having individually programmable cells
US6677805B2 (en) 2001-04-05 2004-01-13 Saifun Semiconductors Ltd. Charge pump stage with body effect minimization
US6493266B1 (en) 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
EP1249842B1 (en) 2001-04-10 2009-08-26 STMicroelectronics S.r.l. Method for programming nonvolatile memory cells with program and verify algorithm using a staircase voltage with varying step amplitude
JP2002319287A (ja) 2001-04-20 2002-10-31 Fujitsu Ltd 不揮発性半導体メモリ
US6636440B2 (en) 2001-04-25 2003-10-21 Saifun Semiconductors Ltd. Method for operation of an EEPROM array, including refresh thereof
TW508590B (en) 2001-05-09 2002-11-01 Macronix Int Co Ltd Operating method of flash memory with symmetrical dual channel
US6347056B1 (en) 2001-05-16 2002-02-12 Motorola, Inc. Recording of result information in a built-in self-test circuit and method therefor
US6760865B2 (en) 2001-05-16 2004-07-06 Freescale Semiconductor, Inc. Multiple level built-in self-test controller and method therefor
US6522585B2 (en) 2001-05-25 2003-02-18 Sandisk Corporation Dual-cell soft programming for virtual-ground memory arrays
US6617179B1 (en) 2001-06-05 2003-09-09 Advanced Micro Devices, Inc. Method and system for qualifying an ONO layer in a semiconductor device
EP1265252A1 (en) 2001-06-05 2002-12-11 STMicroelectronics S.r.l. A method for sector erasure and sector erase verification in a non-voltaile FLASH EEPROM
US6449188B1 (en) * 2001-06-19 2002-09-10 Advanced Micro Devices, Inc. Low column leakage nor flash array-double cell implementation
US6662274B2 (en) 2001-06-20 2003-12-09 Intel Corporation Method for using cache prefetch feature to improve garbage collection algorithm
US6574139B2 (en) 2001-06-20 2003-06-03 Fujitsu Limited Method and device for reading dual bit memory cells using multiple reference cells with two side read
US6512701B1 (en) 2001-06-21 2003-01-28 Advanced Micro Devices, Inc. Erase method for dual bit virtual ground flash
DE10129958B4 (de) 2001-06-21 2006-07-13 Infineon Technologies Ag Speicherzellenanordnung und Herstellungsverfahren
US6436768B1 (en) 2001-06-27 2002-08-20 Advanced Micro Devices, Inc. Source drain implant during ONO formation for improved isolation of SONOS devices
US6462387B1 (en) 2001-06-29 2002-10-08 Chinatech Corporation High density read only memory
KR100390959B1 (ko) 2001-06-29 2003-07-12 주식회사 하이닉스반도체 센싱회로를 이용한 멀티레벨 플래시 메모리 프로그램/리드방법
JP4859294B2 (ja) * 2001-07-10 2012-01-25 富士通セミコンダクター株式会社 不揮発性半導体記憶装置
US6654296B2 (en) 2001-07-23 2003-11-25 Samsung Electronics Co., Ltd. Devices, circuits and methods for dual voltage generation using single charge pump
US6643178B2 (en) 2001-07-31 2003-11-04 Fujitsu Limited System for source side sensing
US6525969B1 (en) 2001-08-10 2003-02-25 Advanced Micro Devices, Inc. Decoder apparatus and methods for pre-charging bit lines
US6469929B1 (en) 2001-08-21 2002-10-22 Tower Semiconductor Ltd. Structure and method for high speed sensing of memory arrays
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6440797B1 (en) 2001-09-28 2002-08-27 Advanced Micro Devices, Inc. Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory
US6645801B1 (en) 2001-10-01 2003-11-11 Advanced Micro Devices, Inc. Salicided gate for virtual ground arrays
US6566194B1 (en) * 2001-10-01 2003-05-20 Advanced Micro Devices, Inc. Salicided gate for virtual ground arrays
US6630384B1 (en) 2001-10-05 2003-10-07 Advanced Micro Devices, Inc. Method of fabricating double densed core gates in sonos flash memory
US6510082B1 (en) 2001-10-23 2003-01-21 Advanced Micro Devices, Inc. Drain side sensing scheme for virtual ground flash EPROM array with adjacent bit charge and hold
TW506123B (en) 2001-10-24 2002-10-11 Macronix Int Co Ltd Multi-level NROM memory cell and its operating method
US6643181B2 (en) 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
US6791396B2 (en) 2001-10-24 2004-09-14 Saifun Semiconductors Ltd. Stack element circuit
US6653190B1 (en) 2001-12-15 2003-11-25 Advanced Micro Devices, Inc. Flash memory with controlled wordline width
US6535020B1 (en) 2001-12-18 2003-03-18 Sun Microsystems, Inc. Output buffer with compensated slew rate and delay control
US6967872B2 (en) 2001-12-18 2005-11-22 Sandisk Corporation Method and system for programming and inhibiting multi-level, non-volatile memory cells
US6885585B2 (en) 2001-12-20 2005-04-26 Saifun Semiconductors Ltd. NROM NOR array
US6639271B1 (en) 2001-12-20 2003-10-28 Advanced Micro Devices, Inc. Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same
DE10164415A1 (de) 2001-12-29 2003-07-17 Philips Intellectual Property Verfahren und Anordnung zur Programmierung und Verifizierung von EEPROM-Pages sowie ein entsprechendes Computerprogrammprodukt und ein entsprechendes computerlesbares Speichermedium
US6674138B1 (en) 2001-12-31 2004-01-06 Advanced Micro Devices, Inc. Use of high-k dielectric materials in modified ONO structure for semiconductor devices
US6529412B1 (en) 2002-01-16 2003-03-04 Advanced Micro Devices, Inc. Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge
US20030134476A1 (en) 2002-01-17 2003-07-17 Yakov Roizin Oxide-nitride-oxide structure
JP2003224213A (ja) 2002-01-30 2003-08-08 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US7062619B2 (en) 2002-01-31 2006-06-13 Saifun Semiconductor Ltd. Mass storage device architecture and operation
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
US7190620B2 (en) 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6928527B2 (en) 2002-01-31 2005-08-09 Saifun Semiconductors Ltd. Look ahead methods and apparatus
JP4082913B2 (ja) 2002-02-07 2008-04-30 株式会社ルネサステクノロジ メモリシステム
US6731011B2 (en) 2002-02-19 2004-05-04 Matrix Semiconductor, Inc. Memory module having interconnected and stacked integrated circuits
JP3796457B2 (ja) 2002-02-28 2006-07-12 富士通株式会社 不揮発性半導体記憶装置
US6639844B1 (en) 2002-03-13 2003-10-28 Advanced Micro Devices, Inc. Overerase correction method
US6642573B1 (en) 2002-03-13 2003-11-04 Advanced Micro Devices, Inc. Use of high-K dielectric material in modified ONO structure for semiconductor devices
US6706595B2 (en) * 2002-03-14 2004-03-16 Advanced Micro Devices, Inc. Hard mask process for memory device without bitline shorts
US6617215B1 (en) 2002-03-27 2003-09-09 Advanced Micro Devices, Inc. Memory wordline hard mask
US6690602B1 (en) 2002-04-08 2004-02-10 Advanced Micro Devices, Inc. Algorithm dynamic reference programming
US8673716B2 (en) 2002-04-08 2014-03-18 Spansion Llc Memory manufacturing process with bitline isolation
US6799256B2 (en) 2002-04-12 2004-09-28 Advanced Micro Devices, Inc. System and method for multi-bit flash reads using dual dynamic references
US6996692B2 (en) 2002-04-17 2006-02-07 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for providing security for the same
US6608526B1 (en) 2002-04-17 2003-08-19 National Semiconductor Corporation CMOS assisted output stage
JP2003309192A (ja) 2002-04-17 2003-10-31 Fujitsu Ltd 不揮発性半導体メモリおよびその製造方法
US6642148B1 (en) 2002-04-19 2003-11-04 Advanced Micro Devices, Inc. RELACS shrink method applied for single print resist mask for LDD or buried bitline implants using chemically amplified DUV type photoresist
US6670241B1 (en) 2002-04-22 2003-12-30 Advanced Micro Devices, Inc. Semiconductor memory with deuterated materials
US6816423B2 (en) 2002-04-29 2004-11-09 Fujitsu Limited System for control of pre-charge levels in a memory device
JP2003332469A (ja) 2002-05-10 2003-11-21 Fujitsu Ltd 不揮発性半導体記憶装置及びその製造方法
US6594181B1 (en) 2002-05-10 2003-07-15 Fujitsu Limited System for reading a double-bit memory cell
US6804151B2 (en) 2002-05-15 2004-10-12 Fujitsu Limited Nonvolatile semiconductor memory device of virtual-ground memory array with reliable data reading
US6653191B1 (en) 2002-05-16 2003-11-25 Advanced Micro Devices, Inc. Memory manufacturing process using bitline rapid thermal anneal
JP3967193B2 (ja) 2002-05-21 2007-08-29 スパンション エルエルシー 不揮発性半導体記憶装置及びその製造方法
US20030218913A1 (en) 2002-05-24 2003-11-27 Le Binh Quang Stepped pre-erase voltages for mirrorbit erase
JP4104133B2 (ja) 2002-05-31 2008-06-18 スパンション エルエルシー 不揮発性半導体記憶装置及びその製造方法
JP4028301B2 (ja) 2002-06-11 2007-12-26 富士通株式会社 不揮発性半導体記憶装置及びその消去方法
US6570211B1 (en) * 2002-06-26 2003-05-27 Advanced Micro Devices, Inc. 2Bit/cell architecture for floating gate flash memory product and associated method
US6917544B2 (en) * 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6813189B2 (en) 2002-07-16 2004-11-02 Fujitsu Limited System for using a dynamic reference in a double-bit cell memory
JP4260434B2 (ja) 2002-07-16 2009-04-30 富士通マイクロエレクトロニクス株式会社 不揮発性半導体メモリ及びその動作方法
JP2004079602A (ja) 2002-08-12 2004-03-11 Fujitsu Ltd トラップ層を有する不揮発性メモリ
US6765259B2 (en) 2002-08-28 2004-07-20 Tower Semiconductor Ltd. Non-volatile memory transistor array implementing “H” shaped source/drain regions and method for fabricating same
JP4113423B2 (ja) 2002-12-04 2008-07-09 シャープ株式会社 半導体記憶装置及びリファレンスセルの補正方法
US6731542B1 (en) 2002-12-05 2004-05-04 Advanced Micro Devices, Inc. Circuit for accurate memory read operations
US6643177B1 (en) 2003-01-21 2003-11-04 Advanced Micro Devices, Inc. Method for improving read margin in a flash memory device
US6842383B2 (en) 2003-01-30 2005-01-11 Saifun Semiconductors Ltd. Method and circuit for operating a memory cell using a single charge pump
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US6803284B2 (en) 2003-02-10 2004-10-12 Macronix International Co., Ltd. Method for manufacturing embedded non-volatile memory with two polysilicon layers
US6912160B2 (en) 2003-03-11 2005-06-28 Fujitsu Limited Nonvolatile semiconductor memory device
US6937523B2 (en) 2003-10-27 2005-08-30 Tower Semiconductor Ltd. Neighbor effect cancellation in memory array architecture
KR100562636B1 (ko) 2003-12-30 2006-03-20 주식회사 하이닉스반도체 반도체 메모리 소자의 파워업 회로
US7158411B2 (en) * 2004-04-01 2007-01-02 Macronix International Co., Ltd. Integrated code and data flash memory
US6980471B1 (en) * 2004-12-23 2005-12-27 Sandisk Corporation Substrate electron injection techniques for programming non-volatile charge storage memory cells
US7369438B2 (en) * 2004-12-28 2008-05-06 Aplus Flash Technology, Inc. Combo memory design and technology for multiple-function java card, sim-card, bio-passport and bio-id card applications
US8072811B2 (en) * 2008-05-07 2011-12-06 Aplus Flash Technology, Inc, NAND based NMOS NOR flash memory cell, a NAND based NMOS NOR flash memory array, and a method of forming a NAND based NMOS NOR flash memory array
KR101468098B1 (ko) * 2008-06-23 2014-12-04 삼성전자주식회사 플래시 메모리 장치 및 그것을 포함하는 메모리 시스템

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US20040008541A1 (en) 2004-01-15
US7489562B2 (en) 2009-02-10
US20080123413A1 (en) 2008-05-29
US7573745B2 (en) 2009-08-11
US20050117444A1 (en) 2005-06-02
JP2004039233A (ja) 2004-02-05
US6954382B2 (en) 2005-10-11
US6917544B2 (en) 2005-07-12
EP1381055A2 (en) 2004-01-14
EP1381055A3 (en) 2007-05-16
US20080130359A1 (en) 2008-06-05
US20060152975A1 (en) 2006-07-13

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