IT1296486B1 - Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash. - Google Patents

Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash.

Info

Publication number
IT1296486B1
IT1296486B1 IT97MI002594A ITMI972594A IT1296486B1 IT 1296486 B1 IT1296486 B1 IT 1296486B1 IT 97MI002594 A IT97MI002594 A IT 97MI002594A IT MI972594 A ITMI972594 A IT MI972594A IT 1296486 B1 IT1296486 B1 IT 1296486B1
Authority
IT
Italy
Prior art keywords
power supply
single power
memory circuits
flash type
supply voltage
Prior art date
Application number
IT97MI002594A
Other languages
English (en)
Inventor
Jacopo Mulatti
Marcello Carrera
Stefano Zanardi
Maurizio Branchetti
Original Assignee
Ses Thomson Microelectronics S
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ses Thomson Microelectronics S filed Critical Ses Thomson Microelectronics S
Priority to IT97MI002594A priority Critical patent/IT1296486B1/it
Priority to US09/196,204 priority patent/US6101118A/en
Publication of ITMI972594A1 publication Critical patent/ITMI972594A1/it
Application granted granted Critical
Publication of IT1296486B1 publication Critical patent/IT1296486B1/it
Priority to US09/602,669 priority patent/US6285614B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Read Only Memory (AREA)
IT97MI002594A 1997-11-21 1997-11-21 Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash. IT1296486B1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT97MI002594A IT1296486B1 (it) 1997-11-21 1997-11-21 Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash.
US09/196,204 US6101118A (en) 1997-11-21 1998-11-20 Voltage regulator for single feed voltage memory circuits, and flash type memory in particular
US09/602,669 US6285614B1 (en) 1997-11-21 2000-06-26 Voltage regulator for single feed voltage memory circuits, and flash type memory in particular

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT97MI002594A IT1296486B1 (it) 1997-11-21 1997-11-21 Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash.

Publications (2)

Publication Number Publication Date
ITMI972594A1 ITMI972594A1 (it) 1999-05-21
IT1296486B1 true IT1296486B1 (it) 1999-06-25

Family

ID=11378249

Family Applications (1)

Application Number Title Priority Date Filing Date
IT97MI002594A IT1296486B1 (it) 1997-11-21 1997-11-21 Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash.

Country Status (2)

Country Link
US (2) US6101118A (it)
IT (1) IT1296486B1 (it)

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JP4149637B2 (ja) * 2000-05-25 2008-09-10 株式会社東芝 半導体装置
EP1176603A1 (en) * 2000-07-26 2002-01-30 STMicroelectronics S.r.l. A non-volatile memory with a charge pump with regulated voltage
US6459628B1 (en) 2001-04-02 2002-10-01 Advanced Micro Devices, Inc. System and method to facilitate stabilization of reference voltage signals in memory devices
US6686778B2 (en) * 2001-08-22 2004-02-03 Intel Corporation High voltage tolerant differential input receiver
US6791396B2 (en) * 2001-10-24 2004-09-14 Saifun Semiconductors Ltd. Stack element circuit
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
DE60226987D1 (de) * 2002-12-30 2008-07-17 St Microelectronics Srl Verfahren zur Stabilisierung der Drain-Spannung in einem nichtflüchtigen Speicher mit mehreren Zuständen und zugehörige Speichervorrichtung
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US6885244B2 (en) 2003-03-24 2005-04-26 Saifun Semiconductors Ltd. Operational amplifier with fast rise time
US6906966B2 (en) * 2003-06-16 2005-06-14 Saifun Semiconductors Ltd. Fast discharge for program and verification
US7050319B2 (en) * 2003-12-03 2006-05-23 Micron Technology, Inc. Memory architecture and method of manufacture and operation thereof
US7176728B2 (en) * 2004-02-10 2007-02-13 Saifun Semiconductors Ltd High voltage low power driver
US8339102B2 (en) * 2004-02-10 2012-12-25 Spansion Israel Ltd System and method for regulating loading on an integrated circuit power supply
WO2005094178A2 (en) 2004-04-01 2005-10-13 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
EP1761931A4 (en) * 2004-05-14 2008-11-19 Zmos Technology Inc INTERNAL VOLTAGE GENERATOR SCHEME AND POWER MANAGEMENT PROCESS
US7190212B2 (en) * 2004-06-08 2007-03-13 Saifun Semiconductors Ltd Power-up and BGREF circuitry
US7256438B2 (en) * 2004-06-08 2007-08-14 Saifun Semiconductors Ltd MOS capacitor with reduced parasitic capacitance
US7187595B2 (en) * 2004-06-08 2007-03-06 Saifun Semiconductors Ltd. Replenishment for internal voltage
DE602004012271T2 (de) * 2004-10-08 2009-03-19 Stmicroelectronics S.R.L., Agrate Brianza Speichervorrichtung und Verfahren für deren Betrieb mit hoher Unterdrückung des Rauschens auf der Hochspannungsversorgungsleitung
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
EP1746645A3 (en) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Memory array with sub-minimum feature size word line spacing and method of fabrication
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
DE102005052058B4 (de) * 2005-10-31 2007-07-12 Infineon Technologies Ag Spannungsregler für eine Bitleitung einer Halbleiterspeicher-Zelle
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7626447B2 (en) * 2007-01-01 2009-12-01 Sandisk Corporation Generation of analog voltage using self-biased capacitive feedback stage
US7492214B2 (en) * 2007-01-01 2009-02-17 Sandisk Corporation Analog voltage generator with self-biased capacitive feedback stage
WO2008083292A1 (en) * 2007-01-01 2008-07-10 Sandisk Corporation Generation of analog voltage using self-biased capacitive feedback stage
US7728569B1 (en) 2007-04-10 2010-06-01 Altera Corporation Voltage regulator circuitry with adaptive compensation
US8148962B2 (en) * 2009-05-12 2012-04-03 Sandisk Il Ltd. Transient load voltage regulator

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0661716B1 (en) * 1993-12-31 1999-07-21 STMicroelectronics S.r.l. Voltage regulator for non-volatile semiconductor memory devices
EP0661717B1 (en) * 1993-12-31 2000-03-29 STMicroelectronics S.r.l. Voltage regulator for programming non-volatile and electrically programmable memory cells
GB9417264D0 (en) * 1994-08-26 1994-10-19 Inmos Ltd Memory device
US5777926A (en) * 1996-10-24 1998-07-07 Programmable Microelectronics Corporation Row decoder circuit for PMOS non-volatile memory cell which uses channel hot electrons for programming
TW423162B (en) * 1997-02-27 2001-02-21 Toshiba Corp Power voltage supplying circuit and semiconductor memory including the same

Also Published As

Publication number Publication date
US6285614B1 (en) 2001-09-04
ITMI972594A1 (it) 1999-05-21
US6101118A (en) 2000-08-08

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