IT1311441B1 - Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello. - Google Patents

Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello.

Info

Publication number
IT1311441B1
IT1311441B1 IT1999TO000994A ITTO990994A IT1311441B1 IT 1311441 B1 IT1311441 B1 IT 1311441B1 IT 1999TO000994 A IT1999TO000994 A IT 1999TO000994A IT TO990994 A ITTO990994 A IT TO990994A IT 1311441 B1 IT1311441 B1 IT 1311441B1
Authority
IT
Italy
Prior art keywords
programming
memory cells
volatile memory
voltage generator
programmable voltage
Prior art date
Application number
IT1999TO000994A
Other languages
English (en)
Inventor
Osama Khouri
Rino Micheloni
Andrea Sacco
Guido Torelli
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999TO000994A priority Critical patent/IT1311441B1/it
Publication of ITTO990994A0 publication Critical patent/ITTO990994A0/it
Priority to US09/714,852 priority patent/US6650173B1/en
Publication of ITTO990994A1 publication Critical patent/ITTO990994A1/it
Application granted granted Critical
Publication of IT1311441B1 publication Critical patent/IT1311441B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Analogue/Digital Conversion (AREA)
  • Read Only Memory (AREA)
IT1999TO000994A 1999-11-16 1999-11-16 Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello. IT1311441B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999TO000994A IT1311441B1 (it) 1999-11-16 1999-11-16 Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello.
US09/714,852 US6650173B1 (en) 1999-11-16 2000-11-15 Programmable voltage generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999TO000994A IT1311441B1 (it) 1999-11-16 1999-11-16 Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello.

Publications (3)

Publication Number Publication Date
ITTO990994A0 ITTO990994A0 (it) 1999-11-16
ITTO990994A1 ITTO990994A1 (it) 2001-05-16
IT1311441B1 true IT1311441B1 (it) 2002-03-12

Family

ID=11418219

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999TO000994A IT1311441B1 (it) 1999-11-16 1999-11-16 Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello.

Country Status (2)

Country Link
US (1) US6650173B1 (it)
IT (1) IT1311441B1 (it)

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US20070296384A1 (en) * 2006-06-26 2007-12-27 Semiconductor Components Industries, Llc. Method of forming a feedback network and structure therefor
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US20080246537A1 (en) * 2007-04-03 2008-10-09 Broadcom Corporation Programmable discontinuity resistors for reference ladders
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US8471624B2 (en) * 2008-07-17 2013-06-25 International Business Machines Corporation Method for controlling the supply voltage for an integrated circuit and an apparatus with a voltage regulation module and an integrated circuit
US7920011B1 (en) * 2009-09-16 2011-04-05 Himax Analogic, Inc. Voltage trimming circuit
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US8350552B1 (en) * 2010-12-10 2013-01-08 Sendyne Corporation Voltage reference and temperature sensor
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US9000837B1 (en) 2013-11-05 2015-04-07 International Business Machines Corporation Adjustable reference voltage generator for single-ended DRAM sensing devices
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US9886047B2 (en) * 2015-05-01 2018-02-06 Rohm Co., Ltd. Reference voltage generation circuit including resistor arrangements
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US20170359033A1 (en) * 2016-06-14 2017-12-14 Macom Technology Solutions Holdings, Inc. Circuits and operating methods thereof for monitoring and protecting a device
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JP6689152B2 (ja) * 2016-07-21 2020-04-28 ルネサスエレクトロニクス株式会社 半導体装置
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Also Published As

Publication number Publication date
US6650173B1 (en) 2003-11-18
ITTO990994A1 (it) 2001-05-16
ITTO990994A0 (it) 1999-11-16

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