IT1308855B1 - Metodo di riprogrammazione controllata per celle di memoria nonvolatile,in particolare di tipo flash eeprom ed eprom. - Google Patents
Metodo di riprogrammazione controllata per celle di memoria nonvolatile,in particolare di tipo flash eeprom ed eprom.Info
- Publication number
- IT1308855B1 IT1308855B1 IT1999TO000942A ITTO990942A IT1308855B1 IT 1308855 B1 IT1308855 B1 IT 1308855B1 IT 1999TO000942 A IT1999TO000942 A IT 1999TO000942A IT TO990942 A ITTO990942 A IT TO990942A IT 1308855 B1 IT1308855 B1 IT 1308855B1
- Authority
- IT
- Italy
- Prior art keywords
- memory cells
- nonvolatile memory
- flash eeprom
- reprogramming method
- eprom type
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999TO000942A IT1308855B1 (it) | 1999-10-29 | 1999-10-29 | Metodo di riprogrammazione controllata per celle di memoria nonvolatile,in particolare di tipo flash eeprom ed eprom. |
US09/699,309 US6381177B1 (en) | 1999-10-29 | 2000-10-27 | Method for controlled soft programming of non-volatile memory cells, in particular of the flash EEPROM and EPROM type |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999TO000942A IT1308855B1 (it) | 1999-10-29 | 1999-10-29 | Metodo di riprogrammazione controllata per celle di memoria nonvolatile,in particolare di tipo flash eeprom ed eprom. |
Publications (3)
Publication Number | Publication Date |
---|---|
ITTO990942A0 ITTO990942A0 (it) | 1999-10-29 |
ITTO990942A1 ITTO990942A1 (it) | 2001-04-29 |
IT1308855B1 true IT1308855B1 (it) | 2002-01-11 |
Family
ID=11418183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT1999TO000942A IT1308855B1 (it) | 1999-10-29 | 1999-10-29 | Metodo di riprogrammazione controllata per celle di memoria nonvolatile,in particolare di tipo flash eeprom ed eprom. |
Country Status (2)
Country | Link |
---|---|
US (1) | US6381177B1 (it) |
IT (1) | IT1308855B1 (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6909638B2 (en) * | 2003-04-30 | 2005-06-21 | Freescale Semiconductor, Inc. | Non-volatile memory having a bias on the source electrode for HCI programming |
US7085170B2 (en) * | 2003-08-07 | 2006-08-01 | Micron Technology, Ind. | Method for erasing an NROM cell |
US7170796B1 (en) * | 2005-08-01 | 2007-01-30 | Spansion Llc | Methods and systems for reducing the threshold voltage distribution following a memory cell erase |
US7697338B2 (en) * | 2006-11-16 | 2010-04-13 | Sandisk Corporation | Systems for controlled boosting in non-volatile memory soft programming |
ITMI20120595A1 (it) * | 2012-04-12 | 2013-10-13 | St Microelectronics Srl | Gestione della cancellazione di pagine operative di un dispositivo di memoria flash tramite pagine di servizio |
US8885405B2 (en) * | 2013-01-31 | 2014-11-11 | Ememory Technology Inc. | Flash memory and associated programming method |
US9384842B1 (en) | 2015-05-20 | 2016-07-05 | Freescale Semiconductor, Inc. | Method and system to improve soft-programming time in non-volatile memory |
US11316687B2 (en) * | 2019-03-04 | 2022-04-26 | Cypress Semiconductor Corporation | Encrypted gang programming |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5485423A (en) * | 1994-10-11 | 1996-01-16 | Advanced Micro Devices, Inc. | Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS |
US5491657A (en) * | 1995-02-24 | 1996-02-13 | Advanced Micro Devices, Inc. | Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells |
US5914896A (en) * | 1996-08-01 | 1999-06-22 | Aplus Flash Technology, Inc. | Flash memory with high speed erasing structure using thin oxide and thick oxide semiconductor devices |
US6005809A (en) * | 1998-06-19 | 1999-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Program and erase method for a split gate flash EEPROM |
US6172909B1 (en) * | 1999-08-09 | 2001-01-09 | Advanced Micro Devices, Inc. | Ramped gate technique for soft programming to tighten the Vt distribution |
-
1999
- 1999-10-29 IT IT1999TO000942A patent/IT1308855B1/it active
-
2000
- 2000-10-27 US US09/699,309 patent/US6381177B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ITTO990942A1 (it) | 2001-04-29 |
ITTO990942A0 (it) | 1999-10-29 |
US6381177B1 (en) | 2002-04-30 |
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