IT1311314B1 - Metodo di riprogrammazione ottimizzata per celle di memoria nonvolatile, in particolare di tipo flash eeprom. - Google Patents
Metodo di riprogrammazione ottimizzata per celle di memoria nonvolatile, in particolare di tipo flash eeprom.Info
- Publication number
- IT1311314B1 IT1311314B1 IT1999TO001098A ITTO991098A IT1311314B1 IT 1311314 B1 IT1311314 B1 IT 1311314B1 IT 1999TO001098 A IT1999TO001098 A IT 1999TO001098A IT TO991098 A ITTO991098 A IT TO991098A IT 1311314 B1 IT1311314 B1 IT 1311314B1
- Authority
- IT
- Italy
- Prior art keywords
- optimized
- memory cells
- volatile memory
- flash eeprom
- eeprom type
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999TO001098A IT1311314B1 (it) | 1999-12-14 | 1999-12-14 | Metodo di riprogrammazione ottimizzata per celle di memoria nonvolatile, in particolare di tipo flash eeprom. |
US09/738,253 US6469934B2 (en) | 1999-12-14 | 2000-12-14 | Soft programming method for non-volatile memory cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999TO001098A IT1311314B1 (it) | 1999-12-14 | 1999-12-14 | Metodo di riprogrammazione ottimizzata per celle di memoria nonvolatile, in particolare di tipo flash eeprom. |
Publications (3)
Publication Number | Publication Date |
---|---|
ITTO991098A0 ITTO991098A0 (it) | 1999-12-14 |
ITTO991098A1 ITTO991098A1 (it) | 2001-06-14 |
IT1311314B1 true IT1311314B1 (it) | 2002-03-12 |
Family
ID=11418293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT1999TO001098A IT1311314B1 (it) | 1999-12-14 | 1999-12-14 | Metodo di riprogrammazione ottimizzata per celle di memoria nonvolatile, in particolare di tipo flash eeprom. |
Country Status (2)
Country | Link |
---|---|
US (1) | US6469934B2 (it) |
IT (1) | IT1311314B1 (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7061792B1 (en) * | 2002-08-10 | 2006-06-13 | National Semiconductor Corporation | Low AC power SRAM architecture |
US8374038B2 (en) * | 2010-05-04 | 2013-02-12 | Macronix International Co., Ltd. | Erase process for use in semiconductor memory device |
US9449694B2 (en) * | 2014-09-04 | 2016-09-20 | Sandisk Technologies Llc | Non-volatile memory with multi-word line select for defect detection operations |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5563823A (en) * | 1993-08-31 | 1996-10-08 | Macronix International Co., Ltd. | Fast FLASH EPROM programming and pre-programming circuit design |
JP3273582B2 (ja) * | 1994-05-13 | 2002-04-08 | キヤノン株式会社 | 記憶装置 |
US5663923A (en) * | 1995-04-28 | 1997-09-02 | Intel Corporation | Nonvolatile memory blocking architecture |
EP0757356B1 (en) * | 1995-07-31 | 2001-06-06 | STMicroelectronics S.r.l. | Flash EEPROM with controlled discharge time of the word lines and source potentials after erase |
WO1997019452A1 (en) | 1995-11-17 | 1997-05-29 | Macronix International Co., Ltd. | Method and system for soft programming algorithm |
DE69632999D1 (de) * | 1996-01-24 | 2004-09-02 | St Microelectronics Srl | Löschspannungs-Steuerschaltkreis für eine löschbare, nichtflüchtige Speicherzelle |
TW334566B (en) * | 1996-02-26 | 1998-06-21 | Sanyo Electric Co | Non-volatile semiconductor memory device |
US5912845A (en) * | 1997-09-10 | 1999-06-15 | Macronix International Co., Ltd. | Method and circuit for substrate current induced hot e- injection (SCIHE) approach for VT convergence at low VCC voltage |
JP3277879B2 (ja) * | 1998-03-27 | 2002-04-22 | 株式会社村田製作所 | チップ状電子部品供給装置 |
US6288938B1 (en) * | 1999-08-19 | 2001-09-11 | Azalea Microelectronics Corporation | Flash memory architecture and method of operation |
-
1999
- 1999-12-14 IT IT1999TO001098A patent/IT1311314B1/it active
-
2000
- 2000-12-14 US US09/738,253 patent/US6469934B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20010055225A1 (en) | 2001-12-27 |
US6469934B2 (en) | 2002-10-22 |
ITTO991098A1 (it) | 2001-06-14 |
ITTO991098A0 (it) | 1999-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1311441B1 (it) | Generatore di tensione programmabile, in particolare per laprogrammazione di celle di memoria non volatili di tipo multilivello. | |
DE60017838D1 (de) | Nichtflüchtiger Speicher Typ NAND | |
DE59915200D1 (de) | Elektrisch programmierbare, nichtflüchtige Speicherzellenanordnung | |
GB2430291B (en) | Erase algorithum multi-level bit flash memory | |
IT1303204B1 (it) | Metodo di programmazione di celle di memoria non volatile ad elevataprecisione, con velocita' di programmazione ottimizzata. | |
FR2849260B1 (fr) | Cellule de memoire sram non volatile. | |
DE60217463D1 (de) | Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle | |
ITRM20010525A1 (it) | Memoria eeprom flash cancellabile per righe. | |
TWI371755B (en) | Method, system and circuit for programming a non-volatile memory array | |
IL152624A0 (en) | Programming of nonvolatile memory cells | |
DE60300777D1 (de) | Nichtflüchtiger redundanzadressen-speicher | |
DE60314068D1 (de) | Nichtflüchtiger Halbleiterspeicher | |
SG108925A1 (en) | Non-volatile memory cells | |
HK1036517A1 (en) | Page mode erase in a flash memory array. | |
DE69734509D1 (de) | Elektrisch programmierbare, nichtflüchtige Halbleiterspeicherzellenmatrix mit ROM-Speicherzellen | |
DE60043485D1 (de) | Nichtflüchtiger Halbleiterspeicher | |
SG105590A1 (en) | Single bit nonvolatile memory cell and methods for programming and erasing thereof | |
DE69923548D1 (de) | Flashkompatibler EEPROM Speicher | |
DE602004004017D1 (de) | Nichtflüchtiger Flash-Speicher | |
IT1308855B1 (it) | Metodo di riprogrammazione controllata per celle di memoria nonvolatile,in particolare di tipo flash eeprom ed eprom. | |
AU2003272109A1 (en) | Flash eeprom unit cell and memory array architecture including the same | |
ITRM20020493A0 (it) | Memoria cam non volatile di tipo and. | |
DE60038133D1 (de) | Nicht-flüchtiger Speicher | |
IT1311314B1 (it) | Metodo di riprogrammazione ottimizzata per celle di memoria nonvolatile, in particolare di tipo flash eeprom. | |
IT1305182B1 (it) | Circuito di lettura analogico ad alta precisione per celle di memorianon volatile, in particolare analogiche o multilivello flash o eeprom. |