ITRM20010525A1 - Memoria eeprom flash cancellabile per righe. - Google Patents

Memoria eeprom flash cancellabile per righe.

Info

Publication number
ITRM20010525A1
ITRM20010525A1 ITRM20010525A ITRM20010525A1 IT RM20010525 A1 ITRM20010525 A1 IT RM20010525A1 IT RM20010525 A ITRM20010525 A IT RM20010525A IT RM20010525 A1 ITRM20010525 A1 IT RM20010525A1
Authority
IT
Italy
Prior art keywords
eeprom memory
flash eeprom
memory erasable
lines
erasable lines
Prior art date
Application number
Other languages
English (en)
Inventor
Giovanni Guaitini
Marco Pasotti
Sandre Guido De
David Iezzi
Marco Poles
Pierluigi Rolandi
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITRM20010525 priority Critical patent/ITRM20010525A1/it
Publication of ITRM20010525D0 publication Critical patent/ITRM20010525D0/it
Publication of ITRM20010525A1 publication Critical patent/ITRM20010525A1/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/08Address circuits; Decoders; Word-line control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/14Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
ITRM20010525 2001-08-30 2001-08-30 Memoria eeprom flash cancellabile per righe. ITRM20010525A1 (it)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ITRM20010525 ITRM20010525A1 (it) 2001-08-30 2001-08-30 Memoria eeprom flash cancellabile per righe.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ITRM20010525 ITRM20010525A1 (it) 2001-08-30 2001-08-30 Memoria eeprom flash cancellabile per righe.
US10/225,513 US6687167B2 (en) 2001-08-30 2002-08-20 EEPROM flash memory erasable line by line

Publications (2)

Publication Number Publication Date
ITRM20010525D0 ITRM20010525D0 (it) 2001-08-30
ITRM20010525A1 true ITRM20010525A1 (it) 2003-02-28

Family

ID=11455754

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM20010525 ITRM20010525A1 (it) 2001-08-30 2001-08-30 Memoria eeprom flash cancellabile per righe.

Country Status (2)

Country Link
US (1) US6687167B2 (it)
IT (1) ITRM20010525A1 (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7339822B2 (en) * 2002-12-06 2008-03-04 Sandisk Corporation Current-limited latch
US20070107024A1 (en) * 2005-11-10 2007-05-10 Scientific-Atlanta, Inc. Atomic channel changes in a switched digital video system
US20070106782A1 (en) * 2005-11-10 2007-05-10 Scientific-Atlanta, Inc. Bandwidth management in each network device in a switched digital video environment
US8099756B2 (en) * 2005-11-10 2012-01-17 Versteeg William C Channel changes between services with differing bandwidth in a switched digital video system
US7873760B2 (en) * 2005-11-11 2011-01-18 Versteeg William C Expedited digital signal decoding
US20080022320A1 (en) * 2006-06-30 2008-01-24 Scientific-Atlanta, Inc. Systems and Methods of Synchronizing Media Streams
US7870465B2 (en) * 2006-10-18 2011-01-11 Versteeg William C Reducing channel-change time
US20080244667A1 (en) * 2007-03-27 2008-10-02 Osborne Jason C Bandwidth sensitive switched digital video content delivery
US8370889B2 (en) * 2007-03-28 2013-02-05 Kanthimathi Gayatri Sukumar Switched digital video client reverse channel traffic reduction
US8832766B2 (en) * 2007-07-27 2014-09-09 William C. Versteeg Systems and methods of differentiated channel change behavior
US8776160B2 (en) * 2007-07-27 2014-07-08 William C. Versteeg Systems and methods of differentiated requests for network access
US8000131B2 (en) * 2009-04-29 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Non-volatile field programmable gate array
CN108288616A (zh) 2016-12-14 2018-07-17 成真股份有限公司 芯片封装
US10447274B2 (en) 2017-07-11 2019-10-15 iCometrue Company Ltd. Logic drive based on standard commodity FPGA IC chips using non-volatile memory cells
US20190245543A1 (en) 2018-02-01 2019-08-08 iCometrue Company Ltd. Logic drive using standard commodity programmable logic ic chips comprising non-volatile radom access memory cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0920023B1 (en) * 1997-11-26 2010-06-30 STMicroelectronics Srl Row decoder for a flash-EEPROM memory device with the possibility of selective erasing of a sub-group of rows of a sector
TW394951B (en) * 1998-10-30 2000-06-21 Samsung Electronics Co Ltd Non-volatile semiconductor memory device and method of driving word lines thereof
KR100381962B1 (ko) * 2000-08-07 2003-05-01 삼성전자주식회사 비휘발성 메모리 장치의 로우 디코더

Also Published As

Publication number Publication date
ITRM20010525D0 (it) 2001-08-30
US20030067804A1 (en) 2003-04-10
US6687167B2 (en) 2004-02-03

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