ITRM20010647A0 - Verifica di cancellazione a blocchi per memorie flash. - Google Patents

Verifica di cancellazione a blocchi per memorie flash.

Info

Publication number
ITRM20010647A0
ITRM20010647A0 IT2001RM000647A ITRM20010647A ITRM20010647A0 IT RM20010647 A0 ITRM20010647 A0 IT RM20010647A0 IT 2001RM000647 A IT2001RM000647 A IT 2001RM000647A IT RM20010647 A ITRM20010647 A IT RM20010647A IT RM20010647 A0 ITRM20010647 A0 IT RM20010647A0
Authority
IT
Italy
Prior art keywords
flash memory
block erase
testing
erase testing
block
Prior art date
Application number
IT2001RM000647A
Other languages
English (en)
Inventor
Zenzo Maurizio Di
Maria Luisa Gallese
Giuliano Gennaro Imondi
Giovanni Naso
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to IT2001RM000647A priority Critical patent/ITRM20010647A1/it
Publication of ITRM20010647A0 publication Critical patent/ITRM20010647A0/it
Priority to US10/286,450 priority patent/US7117402B2/en
Publication of ITRM20010647A1 publication Critical patent/ITRM20010647A1/it
Priority to US11/519,415 priority patent/US7565587B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
IT2001RM000647A 2001-11-02 2001-11-02 Verifica di cancellazione a blocchi per memorie flash. ITRM20010647A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT2001RM000647A ITRM20010647A1 (it) 2001-11-02 2001-11-02 Verifica di cancellazione a blocchi per memorie flash.
US10/286,450 US7117402B2 (en) 2001-11-02 2002-11-01 Background block erase check for flash memories
US11/519,415 US7565587B2 (en) 2001-11-02 2006-09-12 Background block erase check for flash memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001RM000647A ITRM20010647A1 (it) 2001-11-02 2001-11-02 Verifica di cancellazione a blocchi per memorie flash.

Publications (2)

Publication Number Publication Date
ITRM20010647A0 true ITRM20010647A0 (it) 2001-11-02
ITRM20010647A1 ITRM20010647A1 (it) 2003-05-02

Family

ID=11455854

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001RM000647A ITRM20010647A1 (it) 2001-11-02 2001-11-02 Verifica di cancellazione a blocchi per memorie flash.

Country Status (2)

Country Link
US (2) US7117402B2 (it)
IT (1) ITRM20010647A1 (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2851843B1 (fr) * 2003-02-27 2005-08-05 St Microelectronics Sa Memoire flash comprenant un algorithme de verification d'effacement integre dans un algorithme de programmation
US7415646B1 (en) * 2004-09-22 2008-08-19 Spansion Llc Page—EXE erase algorithm for flash memory
DE102006009214B4 (de) * 2006-02-28 2008-05-08 Infineon Technologies Ag Verfahren und Vorrichtung zum Schreiben in eine Zielspeicherseite eines Speichers
US7768835B2 (en) * 2006-08-09 2010-08-03 Micron Technology, Inc. Non-volatile memory erase verify
KR100834915B1 (ko) * 2006-10-20 2008-06-03 삼성전기주식회사 Ｐｃ를 이용하여 테스트하기 위한 임베디드 시스템 및 그방법
CN102609334B (zh) * 2012-01-09 2016-05-04 晨星软件研发(深圳)有限公司 非易失闪存擦除异常存储块修复方法和装置
KR102285462B1 (ko) 2014-03-26 2021-08-05 삼성전자주식회사 불휘발성 메모리 및 메모리 컨트롤러를 포함하는 메모리 시스템의 동작 방법
CN106409336B (zh) * 2016-09-13 2019-10-11 天津大学 基于随机时间的非易失性存储器数据安全擦除方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US6781895B1 (en) * 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
TW231343B (it) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
US5452251A (en) * 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
US5414664A (en) * 1993-05-28 1995-05-09 Macronix International Co., Ltd. Flash EPROM with block erase flags for over-erase protection
US5825782A (en) * 1996-01-22 1998-10-20 Micron Technology, Inc. Non-volatile memory system including apparatus for testing memory elements by writing and verifying data patterns
US5675540A (en) * 1996-01-22 1997-10-07 Micron Quantum Devices, Inc. Non-volatile memory system having internal data verification test mode
JP3599541B2 (ja) * 1997-11-27 2004-12-08 シャープ株式会社 不揮発性半導体記憶装置
US5930174A (en) * 1997-12-11 1999-07-27 Amic Technology, Inc. Circuit and method for erasing flash memory array
US6128224A (en) * 1998-07-29 2000-10-03 Motorola, Inc. Method and apparatus for writing an erasable non-volatile memory
KR100388179B1 (ko) * 1999-02-08 2003-06-19 가부시끼가이샤 도시바 불휘발성 반도체 메모리
US6108263A (en) * 1999-08-12 2000-08-22 Motorola, Inc. Memory system, method for verifying data stored in a memory system after a write cycle and method for writing to a memory system
JP3709126B2 (ja) * 2000-07-05 2005-10-19 シャープ株式会社 不揮発性半導体メモリ装置の消去方法
US6883044B1 (en) * 2000-07-28 2005-04-19 Micron Technology, Inc. Synchronous flash memory with simultaneous access to one or more banks
US6711701B1 (en) * 2000-08-25 2004-03-23 Micron Technology, Inc. Write and erase protection in a synchronous memory
US6580659B1 (en) * 2000-08-25 2003-06-17 Micron Technology, Inc. Burst read addressing in a non-volatile memory device
TW592349U (en) * 2001-09-04 2004-06-11 Cheng-Chun Chang Removable box with IDE interface and USB interface for computer
KR100381954B1 (ko) * 2000-10-26 2003-04-26 삼성전자주식회사 메모리 셀의 과소거를 방지할 수 있는 소거 방법 및그것을 이용한 플래시 메모리 장치
DE60140039D1 (de) * 2001-02-05 2009-11-12 St Microelectronics Srl Löschverfahren für einen Flash-Speicher
US6614695B2 (en) * 2001-08-24 2003-09-02 Micron Technology, Inc. Non-volatile memory with block erase
US6498752B1 (en) * 2001-08-27 2002-12-24 Aplus Flash Technology, Inc. Three step write process used for a nonvolatile NOR type EEPROM memory

Also Published As

Publication number Publication date
US7565587B2 (en) 2009-07-21
ITRM20010647A1 (it) 2003-05-02
US7117402B2 (en) 2006-10-03
US20070022332A1 (en) 2007-01-25
US20030101390A1 (en) 2003-05-29

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