DE60140039D1 - Löschverfahren für einen Flash-Speicher - Google Patents

Löschverfahren für einen Flash-Speicher

Info

Publication number
DE60140039D1
DE60140039D1 DE60140039T DE60140039T DE60140039D1 DE 60140039 D1 DE60140039 D1 DE 60140039D1 DE 60140039 T DE60140039 T DE 60140039T DE 60140039 T DE60140039 T DE 60140039T DE 60140039 D1 DE60140039 D1 DE 60140039D1
Authority
DE
Germany
Prior art keywords
flash memory
deletion procedure
deletion
procedure
flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140039T
Other languages
English (en)
Inventor
Federico Pio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=8184384&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60140039(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60140039D1 publication Critical patent/DE60140039D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
DE60140039T 2001-02-05 2001-02-05 Löschverfahren für einen Flash-Speicher Expired - Lifetime DE60140039D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01830067A EP1229550B1 (de) 2001-02-05 2001-02-05 Löschverfahren für einen Flash-Speicher

Publications (1)

Publication Number Publication Date
DE60140039D1 true DE60140039D1 (de) 2009-11-12

Family

ID=8184384

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140039T Expired - Lifetime DE60140039D1 (de) 2001-02-05 2001-02-05 Löschverfahren für einen Flash-Speicher

Country Status (3)

Country Link
US (1) US6643184B2 (de)
EP (1) EP1229550B1 (de)
DE (1) DE60140039D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITRM20010647A1 (it) * 2001-11-02 2003-05-02 Micron Technology Inc Verifica di cancellazione a blocchi per memorie flash.
US7116584B2 (en) * 2003-08-07 2006-10-03 Micron Technology, Inc. Multiple erase block tagging in a flash memory device
WO2005094178A2 (en) * 2004-04-01 2005-10-13 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US7450433B2 (en) * 2004-12-29 2008-11-11 Sandisk Corporation Word line compensation in non-volatile memory erase operations
US7522457B2 (en) * 2005-03-31 2009-04-21 Sandisk Corporation Systems for erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
US7408804B2 (en) * 2005-03-31 2008-08-05 Sandisk Corporation Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells
US7457166B2 (en) * 2005-03-31 2008-11-25 Sandisk Corporation Erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
US7403430B2 (en) * 2006-02-16 2008-07-22 Macronix International Co., Ltd. Erase operation for use in non-volatile memory
US7710787B2 (en) * 2006-04-11 2010-05-04 Analog Devices, Inc. Method of erasing an EEPROM device
US7535766B2 (en) * 2006-10-13 2009-05-19 Sandisk Corporation Systems for partitioned soft programming in non-volatile memory
US7499338B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation Partitioned soft programming in non-volatile memory
US7499317B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling
US7495954B2 (en) * 2006-10-13 2009-02-24 Sandisk Corporation Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory
KR101348173B1 (ko) * 2007-05-25 2014-01-08 삼성전자주식회사 플래시 메모리 장치, 그것의 소거 및 프로그램 방법들,그리고 그것을 포함한 메모리 시스템
US7848148B2 (en) * 2007-10-18 2010-12-07 Macronix International Co., Ltd. One-transistor cell semiconductor on insulator random access memory
US8189390B2 (en) 2009-03-05 2012-05-29 Mosaid Technologies Incorporated NAND flash architecture with multi-level row decoding
US8130551B2 (en) 2010-03-31 2012-03-06 Sandisk Technologies Inc. Extra dummy erase pulses after shallow erase-verify to avoid sensing deep erased threshold voltage
CN104751880B (zh) * 2013-12-25 2018-09-07 华邦电子股份有限公司 非易失性存储器部份擦洗方法
US10665303B1 (en) * 2019-05-10 2020-05-26 Macronix International Co., Ltd. Erasing blocks with few programmed pages
TWI761183B (zh) * 2021-04-19 2022-04-11 旺宏電子股份有限公司 對記憶體裝置執行操作之方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW231343B (de) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
JPH08111096A (ja) * 1994-10-12 1996-04-30 Nec Corp 半導体記憶装置及びその消去方法
DE69824386D1 (de) * 1998-01-22 2004-07-15 St Microelectronics Srl Verfahren für kontrolliertes Löschen von Speicheranordnungen, insbesondere Analog- oder Mehrwert-Flash-EEPROM Anordnungen
US6188609B1 (en) * 1999-05-06 2001-02-13 Advanced Micro Devices, Inc. Ramped or stepped gate channel erase for flash memory application
JP4360736B2 (ja) * 2000-01-27 2009-11-11 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US6480419B2 (en) * 2001-02-22 2002-11-12 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory

Also Published As

Publication number Publication date
US20020114193A1 (en) 2002-08-22
US6643184B2 (en) 2003-11-04
EP1229550B1 (de) 2009-09-30
EP1229550A1 (de) 2002-08-07

Similar Documents

Publication Publication Date Title
DE60140039D1 (de) Löschverfahren für einen Flash-Speicher
DE60235951D1 (de) Pipeline-programmierung für einen NAND-typ Flash-Speicher
DE60337026D1 (de) Beleuchtungsanordnung für eine projektionsvorrichtung
DE60314068D1 (de) Nichtflüchtiger Halbleiterspeicher
DE602004007173D1 (de) Nichtflüchtiger Halbleiterspeicher
DE60213560D1 (de) Halbleiterspeicher
DE60232371D1 (de) Programmpositionsbenutzerschnittstelle für einen pvr-puffer
DE60210416D1 (de) Speicherkarte
DE60225201D1 (de) Speicherverwaltung für einen gemeinsamen Speicher
ITRM20010525A1 (it) Memoria eeprom flash cancellabile per righe.
ITMI20022240A1 (it) Architettura di memoria flash con cancellazione di modo
DE60317381D1 (de) Halbleiterspeicher
DE60304801D1 (de) Kurzschlusssteckverbindung für eine Zündpille
ITRM20010516A1 (it) Architettura a schiera di memorie flash.
DE60336787D1 (de) Halbleiterspeicher
DE60334276D1 (de) Programmierbarer Speichertransistor
DE60224260D1 (de) Flash-speicherkartenverbinder
DE602004004017D1 (de) Nichtflüchtiger Flash-Speicher
DE60311035D1 (de) Schieber
ITRM20010524A1 (it) Struttura a schiera di memoria flash.
DE10196011T1 (de) Flash mit konsistenter Latenz für Leseoperationen
DE60300481D1 (de) Clip für einen beweglich montierten Steckverbinder
DE602004012923D1 (de) Wortweise programmierbarer Flash-Speicher
DE10196001T1 (de) Schnittstellenbefehlsarchitektur für synchronen Flashspeicher
DE602004008697D1 (de) Abnutzungsausgleich in einem nicht flüchtigen Flash-Speicher ohne die Notwendigkeit freier Blöcke

Legal Events

Date Code Title Description
8364 No opposition during term of opposition