DE60235951D1 - Pipeline-programmierung für einen NAND-typ Flash-Speicher - Google Patents

Pipeline-programmierung für einen NAND-typ Flash-Speicher

Info

Publication number
DE60235951D1
DE60235951D1 DE60235951T DE60235951T DE60235951D1 DE 60235951 D1 DE60235951 D1 DE 60235951D1 DE 60235951 T DE60235951 T DE 60235951T DE 60235951 T DE60235951 T DE 60235951T DE 60235951 D1 DE60235951 D1 DE 60235951D1
Authority
DE
Germany
Prior art keywords
nand
flash memory
type flash
pipeline programming
programming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60235951T
Other languages
English (en)
Inventor
Masaru Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Application granted granted Critical
Publication of DE60235951D1 publication Critical patent/DE60235951D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1039—Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory
DE60235951T 2001-12-21 2002-04-22 Pipeline-programmierung für einen NAND-typ Flash-Speicher Expired - Lifetime DE60235951D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/029,666 US6687158B2 (en) 2001-12-21 2001-12-21 Gapless programming for a NAND type flash memory

Publications (1)

Publication Number Publication Date
DE60235951D1 true DE60235951D1 (de) 2010-05-27

Family

ID=21850227

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60235951T Expired - Lifetime DE60235951D1 (de) 2001-12-21 2002-04-22 Pipeline-programmierung für einen NAND-typ Flash-Speicher

Country Status (6)

Country Link
US (1) US6687158B2 (de)
EP (1) EP1326257B1 (de)
JP (1) JP4104395B2 (de)
KR (1) KR100848611B1 (de)
DE (1) DE60235951D1 (de)
TW (1) TW550573B (de)

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US7502255B2 (en) * 2007-03-07 2009-03-10 Sandisk Corporation Method for cache page copy in a non-volatile memory
DE102007011638A1 (de) * 2007-03-09 2008-09-11 Giesecke & Devrient Gmbh Verfahren zum Einschreiben von Daten in einen Speicher eines tragbaren Datenträgers
KR101348173B1 (ko) * 2007-05-25 2014-01-08 삼성전자주식회사 플래시 메모리 장치, 그것의 소거 및 프로그램 방법들,그리고 그것을 포함한 메모리 시스템
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KR101401558B1 (ko) * 2007-08-20 2014-06-09 삼성전자주식회사 플래시 메모리 장치, 그것의 프로그램 및 소거 방법들,그리고 그것을 포함하는 메모리 시스템 및 컴퓨터 시스템
KR101373186B1 (ko) * 2007-08-22 2014-03-13 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법들, 그리고그것을 포함하는 메모리 시스템 및 컴퓨터 시스템
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KR102282196B1 (ko) * 2015-04-28 2021-07-27 삼성전자 주식회사 비휘발성 메모리 장치, 메모리 시스템 및 그것의 동작 방법
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Also Published As

Publication number Publication date
TW550573B (en) 2003-09-01
JP2003196989A (ja) 2003-07-11
US6687158B2 (en) 2004-02-03
US20030117850A1 (en) 2003-06-26
KR20030052943A (ko) 2003-06-27
EP1326257A3 (de) 2006-08-30
EP1326257B1 (de) 2010-04-14
KR100848611B1 (ko) 2008-07-28
JP4104395B2 (ja) 2008-06-18
EP1326257A2 (de) 2003-07-09

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE

8364 No opposition during term of opposition