DE69911591D1 - Leseschaltung für einen nichtflüchtigen Speicher - Google Patents

Leseschaltung für einen nichtflüchtigen Speicher

Info

Publication number
DE69911591D1
DE69911591D1 DE69911591T DE69911591T DE69911591D1 DE 69911591 D1 DE69911591 D1 DE 69911591D1 DE 69911591 T DE69911591 T DE 69911591T DE 69911591 T DE69911591 T DE 69911591T DE 69911591 D1 DE69911591 D1 DE 69911591D1
Authority
DE
Germany
Prior art keywords
volatile memory
read circuit
read
circuit
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69911591T
Other languages
English (en)
Inventor
Rino Micheloni
Giovanni Campardo
Luca Crippa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69911591D1 publication Critical patent/DE69911591D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
DE69911591T 1999-07-22 1999-07-22 Leseschaltung für einen nichtflüchtigen Speicher Expired - Lifetime DE69911591D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99830469A EP1071096B1 (de) 1999-07-22 1999-07-22 Leseschaltung für einen nichtflüchtigen Speicher

Publications (1)

Publication Number Publication Date
DE69911591D1 true DE69911591D1 (de) 2003-10-30

Family

ID=8243514

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69911591T Expired - Lifetime DE69911591D1 (de) 1999-07-22 1999-07-22 Leseschaltung für einen nichtflüchtigen Speicher

Country Status (4)

Country Link
US (1) US6327184B1 (de)
EP (1) EP1071096B1 (de)
JP (1) JP3655538B2 (de)
DE (1) DE69911591D1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1318013B1 (it) * 2000-06-13 2003-07-21 St Microelectronics Srl Disposizione circuitale per l'abbassamento della tensione di soglia di un transistore configurato a diodo.
US6535434B2 (en) 2001-04-05 2003-03-18 Saifun Semiconductors Ltd. Architecture and scheme for a non-strobed read sequence
IL148959A (en) * 2001-04-05 2006-09-05 Saifun Semiconductors Ltd Architecture and scheme for a non-strobed read sequence
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7652930B2 (en) 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7009880B1 (en) 2004-08-17 2006-03-07 Programmable Microelectronics Corporation Non-volatile memory architecture to improve read performance
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7082061B2 (en) * 2004-12-03 2006-07-25 Macronix International Co., Ltd. Memory array with low power bit line precharge
US7082069B2 (en) * 2004-12-03 2006-07-25 Macronix International Co., Ltd. Memory array with fast bit line precharge
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
FR2885726B1 (fr) * 2005-05-11 2007-07-06 Atmel Corp Circuit amplificateur de detection pour la detection parallele de quatre niveaux de courant
WO2006124159A2 (en) * 2005-05-11 2006-11-23 Atmel Corporation Sense amplifier circuit for parallel sensing of four current levels
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
EP1746645A3 (de) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Speicherzellenanordnung mit sub-minimalem Wortleitungsabstand und Verfahren zu deren Herstellung
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
TWI334575B (en) * 2005-11-22 2010-12-11 Ind Tech Res Inst Radio frequency identification tag with embedded memroy testing scheme and the method of testing the same
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7369450B2 (en) 2006-05-26 2008-05-06 Freescale Semiconductor, Inc. Nonvolatile memory having latching sense amplifier and method of operation
US8665651B1 (en) * 2012-09-11 2014-03-04 Winbond Electronics Corp. Reference cell circuit and method of producing a reference current
TWI485713B (zh) * 2012-12-11 2015-05-21 Winbond Electronics Corp 用以產生參考電流之參考單元電路以及方法
ITUA20161478A1 (it) * 2016-03-09 2017-09-09 St Microelectronics Srl Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile
US11107509B1 (en) 2020-06-12 2021-08-31 Micron Technology, Inc. Continuous sensing to determine read points

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices
JPS63239694A (ja) * 1987-03-27 1988-10-05 Toshiba Corp 半導体記憶装置
US4879682A (en) * 1988-09-15 1989-11-07 Motorola, Inc. Sense amplifier precharge control
JP2601903B2 (ja) * 1989-04-25 1997-04-23 株式会社東芝 半導体記憶装置
WO1993018412A1 (en) * 1992-03-13 1993-09-16 Silicon Storage Technology, Inc. A sensing circuit for a floating gate memory device
EP0740307B1 (de) * 1995-04-28 2001-12-12 STMicroelectronics S.r.l. Leseverstärkerschaltung für Halbleiterspeicheranordnungen
EP0814484B1 (de) * 1996-06-18 2003-09-17 STMicroelectronics S.r.l. Nichtflüchtiger Speicher mit Einzelzellenreferenzsignalgeneratorschaltung zum Auslesen von Speicherzellen
FR2762434B1 (fr) * 1997-04-16 1999-05-28 Sgs Thomson Microelectronics Circuit de lecture de memoire avec dispositif de limitation de precharge
DE69820594D1 (de) * 1998-05-29 2004-01-29 St Microelectronics Srl Anordnung und Verfahren zum Lesen von nichtflüchtigen Speicherzellen

Also Published As

Publication number Publication date
JP2001084782A (ja) 2001-03-30
EP1071096A1 (de) 2001-01-24
JP3655538B2 (ja) 2005-06-02
EP1071096B1 (de) 2003-09-24
US6327184B1 (en) 2001-12-04

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Legal Events

Date Code Title Description
8332 No legal effect for de