DE60029206D1 - Nichtflüchtiger Speicher zur Speicherung von Multibitdaten - Google Patents
Nichtflüchtiger Speicher zur Speicherung von MultibitdatenInfo
- Publication number
- DE60029206D1 DE60029206D1 DE60029206T DE60029206T DE60029206D1 DE 60029206 D1 DE60029206 D1 DE 60029206D1 DE 60029206 T DE60029206 T DE 60029206T DE 60029206 T DE60029206 T DE 60029206T DE 60029206 D1 DE60029206 D1 DE 60029206D1
- Authority
- DE
- Germany
- Prior art keywords
- volatile memory
- bit data
- storing multi
- storing
- bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5647—Multilevel memory with bit inversion arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000199601A JP3942342B2 (ja) | 2000-06-30 | 2000-06-30 | 多値データを記録する不揮発性メモリ |
JP2000199601 | 2000-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60029206D1 true DE60029206D1 (de) | 2006-08-17 |
DE60029206T2 DE60029206T2 (de) | 2006-11-02 |
Family
ID=18697588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60029206T Expired - Lifetime DE60029206T2 (de) | 2000-06-30 | 2000-12-06 | Nichtflüchtiger Speicher zur Speicherung von Multibitdaten |
Country Status (6)
Country | Link |
---|---|
US (1) | US6288936B1 (de) |
EP (1) | EP1168361B1 (de) |
JP (1) | JP3942342B2 (de) |
KR (1) | KR100589928B1 (de) |
DE (1) | DE60029206T2 (de) |
TW (1) | TW487913B (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE40110E1 (en) * | 1999-09-20 | 2008-02-26 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device for storing multivalued data |
IL148834A (en) | 2000-09-10 | 2007-03-08 | Sandisk Il Ltd | Removable, active, personal storage device, system and method |
EP1195416A3 (de) * | 2000-10-05 | 2005-12-28 | Degussa AG | Polymerisierbare siliciumorganische Nanokapseln |
JP4044755B2 (ja) * | 2000-12-12 | 2008-02-06 | 三星電子株式会社 | 不揮発性半導体メモリ装置及びそれのプログラム方法 |
JP3631463B2 (ja) * | 2001-12-27 | 2005-03-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6480419B2 (en) * | 2001-02-22 | 2002-11-12 | Samsung Electronics Co., Ltd. | Bit line setup and discharge circuit for programming non-volatile memory |
EP1331238A3 (de) * | 2002-01-23 | 2004-01-14 | Degussa AG | Gemisch kettenförmiger und cyclischer Siloxanoligomerer, dessen Herstellung und dessen Verwendung |
US6836432B1 (en) * | 2002-02-11 | 2004-12-28 | Advanced Micro Devices, Inc. | Partial page programming of multi level flash |
US6847550B2 (en) * | 2002-10-25 | 2005-01-25 | Nexflash Technologies, Inc. | Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor |
DE10336544A1 (de) * | 2003-08-05 | 2005-02-24 | Degussa Ag | Zweikomponentenbeschichtungssystem für die Ausstattung glatter Oberflächen mit "Easy-to-clean" - Eigenschaften |
JP4750034B2 (ja) * | 2004-07-30 | 2011-08-17 | スパンション エルエルシー | 半導体装置および書き込み方法 |
US7466588B2 (en) * | 2004-10-07 | 2008-12-16 | Nokia Corporation | Method for improving programming speed in memory devices |
US7769963B1 (en) * | 2005-02-09 | 2010-08-03 | Tc License Ltd. | RF tag system with single step read and write commands |
KR100680478B1 (ko) * | 2005-03-22 | 2007-02-08 | 주식회사 하이닉스반도체 | 면적이 감소된 플래시 메모리 장치와 그 액세스 제어 방법 |
KR100600301B1 (ko) * | 2005-05-25 | 2006-07-13 | 주식회사 하이닉스반도체 | 면적이 감소된 페이지 버퍼 회로와, 이를 포함하는 플래시메모리 장치 및 그 프로그램 동작 방법 |
KR100648286B1 (ko) | 2005-07-04 | 2006-11-23 | 삼성전자주식회사 | 단일의 페이지 버퍼 구조로 멀티-비트 및 단일-비트프로그램 동작을 수행하는 플래시 메모리 장치 |
KR100642892B1 (ko) * | 2005-07-19 | 2006-11-03 | 주식회사 하이닉스반도체 | 면적이 감소된 페이지 버퍼 회로와 그 독출 및 프로그램동작 방법 |
KR100648290B1 (ko) * | 2005-07-26 | 2006-11-23 | 삼성전자주식회사 | 프로그램 속도를 향상시킬 수 있는 불 휘발성 메모리 장치및 그것의 프로그램 방법 |
KR100742278B1 (ko) | 2005-11-23 | 2007-07-24 | 삼성전자주식회사 | 향상된 동작 속도 및 듀얼 프로그램 기능을 갖는 낸드플래시 메모리 장치 |
ITRM20060074A1 (it) * | 2006-02-15 | 2007-08-16 | Micron Technology Inc | Circuito per dati a latch singolo in un dispositivo di memoria volatile e delle a piu livelli |
WO2007095217A1 (en) * | 2006-02-15 | 2007-08-23 | Micron Technology, Inc. | Single latch data circuit in a multiple level cell non-volatile memory device |
KR100854903B1 (ko) | 2006-05-10 | 2008-08-28 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 프로그램 방법 |
TWI378551B (en) * | 2006-07-31 | 2012-12-01 | Sandisk 3D Llc | Method and apparatus for reading a multi-level passive element memory cell array |
KR100866954B1 (ko) | 2006-09-29 | 2008-11-05 | 삼성전자주식회사 | 멀티 레벨 셀의 프로그래밍 시간을 줄일 수 있는 플래쉬메모리 장치 및 그 프로그래밍 방법 |
JP5016888B2 (ja) * | 2006-10-04 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100816162B1 (ko) * | 2007-01-23 | 2008-03-21 | 주식회사 하이닉스반도체 | 낸드 플래시 메모리 장치 및 셀 특성 개선 방법 |
JP5111882B2 (ja) * | 2007-02-09 | 2013-01-09 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100826654B1 (ko) * | 2007-04-24 | 2008-05-06 | 주식회사 하이닉스반도체 | 플래시 메모리소자의 동작방법 및 이를 위한 제어회로 |
JP5150245B2 (ja) | 2007-12-27 | 2013-02-20 | 株式会社東芝 | 半導体記憶装置 |
KR101513714B1 (ko) * | 2008-07-09 | 2015-04-21 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
KR101618311B1 (ko) * | 2010-02-08 | 2016-05-04 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 읽기 방법 |
KR20120045202A (ko) | 2010-10-29 | 2012-05-09 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 프로그램 방법 |
KR101278103B1 (ko) * | 2011-09-26 | 2013-06-24 | 에스케이하이닉스 주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
US9812223B2 (en) * | 2013-06-21 | 2017-11-07 | SK Hynix Inc. | Semiconductor memory device and method of operating the same |
KR20140148132A (ko) * | 2013-06-21 | 2014-12-31 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 동작 방법 |
JP5901712B2 (ja) * | 2014-08-29 | 2016-04-13 | 株式会社日立製作所 | 半導体装置および情報処理装置 |
KR102406664B1 (ko) * | 2016-02-24 | 2022-06-08 | 삼성전자주식회사 | Otp 메모리 및 그것의 데이터 기입 방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3153730B2 (ja) * | 1995-05-16 | 2001-04-09 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100332950B1 (ko) * | 1998-04-10 | 2002-08-21 | 삼성전자 주식회사 | 단일비트동작모드와다중비트동작모드를갖는불휘발성반도체메모리장치및그것의기입/독출방법 |
-
2000
- 2000-06-30 JP JP2000199601A patent/JP3942342B2/ja not_active Expired - Fee Related
- 2000-12-06 EP EP00310853A patent/EP1168361B1/de not_active Expired - Lifetime
- 2000-12-06 DE DE60029206T patent/DE60029206T2/de not_active Expired - Lifetime
- 2000-12-12 US US09/734,233 patent/US6288936B1/en not_active Expired - Lifetime
- 2000-12-14 TW TW089126763A patent/TW487913B/zh not_active IP Right Cessation
-
2001
- 2001-02-06 KR KR1020010005561A patent/KR100589928B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP1168361B1 (de) | 2006-07-05 |
KR100589928B1 (ko) | 2006-06-15 |
JP2002025277A (ja) | 2002-01-25 |
EP1168361A2 (de) | 2002-01-02 |
DE60029206T2 (de) | 2006-11-02 |
TW487913B (en) | 2002-05-21 |
JP3942342B2 (ja) | 2007-07-11 |
KR20020003074A (ko) | 2002-01-10 |
US6288936B1 (en) | 2001-09-11 |
EP1168361A3 (de) | 2004-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |