DE60133513D1 - Programmierbarer und elektrisch löschbarer serieller auslesbarer Speicher durch Vorempfang - Google Patents
Programmierbarer und elektrisch löschbarer serieller auslesbarer Speicher durch VorempfangInfo
- Publication number
- DE60133513D1 DE60133513D1 DE60133513T DE60133513T DE60133513D1 DE 60133513 D1 DE60133513 D1 DE 60133513D1 DE 60133513 T DE60133513 T DE 60133513T DE 60133513 T DE60133513 T DE 60133513T DE 60133513 D1 DE60133513 D1 DE 60133513D1
- Authority
- DE
- Germany
- Prior art keywords
- programmable
- reception
- electrically erasable
- out memory
- serial read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/30—Reduction of number of input/output pins by using a serial interface to transmit or receive addresses or data, i.e. serial access memory
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0002449A FR2805653A1 (fr) | 2000-02-28 | 2000-02-28 | Memoire serie programmable et effacable electriquement a lecture par anticipation |
FR0002449 | 2000-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60133513D1 true DE60133513D1 (de) | 2008-05-21 |
DE60133513T2 DE60133513T2 (de) | 2009-04-30 |
Family
ID=8847448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60133513T Expired - Lifetime DE60133513T2 (de) | 2000-02-28 | 2001-02-05 | Programmierbarer und elektrisch löschbarer serieller auslesbarer Speicher durch Vorempfang |
Country Status (4)
Country | Link |
---|---|
US (1) | US6477101B2 (de) |
EP (1) | EP1172820B1 (de) |
DE (1) | DE60133513T2 (de) |
FR (1) | FR2805653A1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2803080A1 (fr) * | 1999-12-22 | 2001-06-29 | St Microelectronics Sa | Memoire flash programmable page par page |
EP1220225A1 (de) * | 2000-12-28 | 2002-07-03 | STMicroelectronics S.r.l. | Ein Verfahren und die zugehörige Schaltung zur Verminderung der Zugriffszeit zum Lesen eines nicht flüchtigen Speichers |
JP2003308698A (ja) * | 2002-04-12 | 2003-10-31 | Toshiba Corp | 不揮発性半導体メモリ装置 |
DE102004016334A1 (de) * | 2004-04-02 | 2005-11-03 | Infineon Technologies Ag | Verfahren zum Testen eines integrierten Halbleiterspeichers und integrierter Halbleiterspeicher |
FR2874734A1 (fr) | 2004-08-26 | 2006-03-03 | St Microelectronics Sa | Procede de lecture de cellules memoire programmables et effacables electriquement, a precharge anticipee de lignes de bit |
US6879535B1 (en) * | 2004-08-30 | 2005-04-12 | Atmel Corporation | Approach for zero dummy byte flash memory read operation |
US7187585B2 (en) * | 2005-04-05 | 2007-03-06 | Sandisk Corporation | Read operation for non-volatile storage that includes compensation for coupling |
US7196946B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling in non-volatile storage |
US7196928B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling during read operations of non-volatile memory |
US7916750B2 (en) * | 2005-12-28 | 2011-03-29 | Intel Corporation | Transaction layer packet compression |
FR2901626A1 (fr) | 2006-05-29 | 2007-11-30 | St Microelectronics Sa | Memoire eeprom ayant une resistance contre le claquage de transistors amelioree |
JP5319572B2 (ja) * | 2010-02-23 | 2013-10-16 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | メモリ装置 |
US8645637B2 (en) | 2010-11-16 | 2014-02-04 | Micron Technology, Inc. | Interruption of write memory operations to provide faster read access in a serial interface memory |
US8583987B2 (en) | 2010-11-16 | 2013-11-12 | Micron Technology, Inc. | Method and apparatus to perform concurrent read and write memory operations |
US9159442B2 (en) * | 2011-11-11 | 2015-10-13 | Microchip Technology Incorporated | Serial memory with fast read with look-ahead |
CN103544991B (zh) * | 2012-07-12 | 2016-06-22 | 华邦电子股份有限公司 | 闪存装置及其操作的方法 |
FR3012672B1 (fr) | 2013-10-31 | 2017-04-14 | Stmicroelectronics Rousset | Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees |
FR3012673B1 (fr) * | 2013-10-31 | 2017-04-14 | St Microelectronics Rousset | Memoire programmable par injection de porteurs chauds et procede de programmation d'une telle memoire |
FR3017746B1 (fr) | 2014-02-18 | 2016-05-27 | Stmicroelectronics Rousset | Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne |
FR3065826B1 (fr) * | 2017-04-28 | 2024-03-15 | Patrick Pirim | Procede et dispositif associe automatises aptes a memoriser, rappeler et, de maniere non volatile des associations de messages versus labels et vice versa, avec un maximum de vraisemblance |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR712133A (fr) * | 1931-02-26 | 1931-09-25 | A Et H Patient Et Co | Appareil de chasse pour w.-c. utilisant l'eau en pression avec canalisation d'alimentation réduite |
US4723228B1 (en) * | 1983-08-31 | 1998-04-21 | Texas Instruments Inc | Memory decoding circuitry |
US4797858A (en) * | 1987-03-30 | 1989-01-10 | Motorola, Inc. | Semiconductor memory with divided word lines and shared sense amplifiers |
FR2726934B1 (fr) * | 1994-11-10 | 1997-01-17 | Sgs Thomson Microelectronics | Procede de lecture anticipee de memoire a acces serie et memoire s'y rapportant |
US5691956A (en) * | 1996-07-17 | 1997-11-25 | Chang; Edward C. M. | Memory with fast decoding |
US6038185A (en) * | 1998-05-12 | 2000-03-14 | Atmel Corporation | Method and apparatus for a serial access memory |
-
2000
- 2000-02-28 FR FR0002449A patent/FR2805653A1/fr active Pending
-
2001
- 2001-02-05 EP EP01102475A patent/EP1172820B1/de not_active Expired - Lifetime
- 2001-02-05 DE DE60133513T patent/DE60133513T2/de not_active Expired - Lifetime
- 2001-02-28 US US09/795,657 patent/US6477101B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1172820B1 (de) | 2008-04-09 |
EP1172820A1 (de) | 2002-01-16 |
FR2805653A1 (fr) | 2001-08-31 |
US20010021117A1 (en) | 2001-09-13 |
US6477101B2 (en) | 2002-11-05 |
DE60133513T2 (de) | 2009-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |