FR3017746B1 - Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne - Google Patents
Cellule memoire verticale ayant un implant drain-source flottant non auto-aligneInfo
- Publication number
- FR3017746B1 FR3017746B1 FR1451297A FR1451297A FR3017746B1 FR 3017746 B1 FR3017746 B1 FR 3017746B1 FR 1451297 A FR1451297 A FR 1451297A FR 1451297 A FR1451297 A FR 1451297A FR 3017746 B1 FR3017746 B1 FR 3017746B1
- Authority
- FR
- France
- Prior art keywords
- self
- memory cell
- vertical memory
- source implant
- floating drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007943 implant Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1451297A FR3017746B1 (fr) | 2014-02-18 | 2014-02-18 | Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne |
US14/625,356 US9543311B2 (en) | 2014-02-18 | 2015-02-18 | Vertical memory cell with non-self-aligned floating drain-source implant |
US15/365,768 US9876122B2 (en) | 2014-02-18 | 2016-11-30 | Vertical memory cell with non-self-aligned floating drain-source implant |
US15/852,826 US10192999B2 (en) | 2014-02-18 | 2017-12-22 | Vertical memory cell with non-self-aligned floating drain-source implant |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1451297A FR3017746B1 (fr) | 2014-02-18 | 2014-02-18 | Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3017746A1 FR3017746A1 (fr) | 2015-08-21 |
FR3017746B1 true FR3017746B1 (fr) | 2016-05-27 |
Family
ID=51168015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1451297A Active FR3017746B1 (fr) | 2014-02-18 | 2014-02-18 | Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne |
Country Status (2)
Country | Link |
---|---|
US (3) | US9543311B2 (fr) |
FR (1) | FR3017746B1 (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3012672B1 (fr) * | 2013-10-31 | 2017-04-14 | Stmicroelectronics Rousset | Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees |
FR3017746B1 (fr) | 2014-02-18 | 2016-05-27 | Stmicroelectronics Rousset | Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne |
US9917165B2 (en) * | 2015-05-15 | 2018-03-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory cell structure for improving erase speed |
FR3057393A1 (fr) | 2016-10-11 | 2018-04-13 | Stmicroelectronics (Rousset) Sas | Circuit integre avec condensateur de decouplage dans une structure de type triple caisson |
CN108806751B (zh) * | 2017-04-26 | 2021-04-09 | 中芯国际集成电路制造(上海)有限公司 | 多次可程式闪存单元阵列及其操作方法、存储器件 |
FR3070535A1 (fr) * | 2017-08-28 | 2019-03-01 | Stmicroelectronics (Crolles 2) Sas | Circuit integre avec element capacitif a structure verticale, et son procede de fabrication |
FR3070534A1 (fr) | 2017-08-28 | 2019-03-01 | Stmicroelectronics (Rousset) Sas | Procede de fabrication d'elements capacitifs dans des tranchees |
US10553708B2 (en) * | 2017-08-29 | 2020-02-04 | International Business Machines Corporation | Twin gate tunnel field-effect transistor (FET) |
FR3076660B1 (fr) | 2018-01-09 | 2020-02-07 | Stmicroelectronics (Rousset) Sas | Dispositif integre de cellule capacitive de remplissage et procede de fabrication correspondant |
US11621222B2 (en) | 2018-01-09 | 2023-04-04 | Stmicroelectronics (Rousset) Sas | Integrated filler capacitor cell device and corresponding manufacturing method |
US10482975B2 (en) | 2018-03-16 | 2019-11-19 | Microchip Technology Incorporated | Flash memory cell with dual erase modes for increased cell endurance |
FR3080949B1 (fr) * | 2018-05-04 | 2021-05-28 | St Microelectronics Rousset | Dispositif de memoire non volatile du type a piegeage de charges et procede de fabrication |
FR3087027A1 (fr) | 2018-10-08 | 2020-04-10 | Stmicroelectronics (Rousset) Sas | Element capacitif de puce electronique |
US10762966B2 (en) * | 2018-10-30 | 2020-09-01 | Globalfoundries Singapore Pte. Ltd. | Memory arrays and methods of forming the same |
US11004785B2 (en) | 2019-08-21 | 2021-05-11 | Stmicroelectronics (Rousset) Sas | Co-integrated vertically structured capacitive element and fabrication process |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5278438A (en) * | 1991-12-19 | 1994-01-11 | North American Philips Corporation | Electrically erasable and programmable read-only memory with source and drain regions along sidewalls of a trench structure |
US5495441A (en) | 1994-05-18 | 1996-02-27 | United Microelectronics Corporation | Split-gate flash memory cell |
US5675161A (en) * | 1995-03-28 | 1997-10-07 | Thomas; Mammen | Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications |
US5745410A (en) | 1995-11-17 | 1998-04-28 | Macronix International Co., Ltd. | Method and system for soft programming algorithm |
JPH11162181A (ja) | 1997-11-26 | 1999-06-18 | Sanyo Electric Co Ltd | 不揮発性半導体記憶装置 |
US6496417B1 (en) | 1999-06-08 | 2002-12-17 | Macronix International Co., Ltd. | Method and integrated circuit for bit line soft programming (BLISP) |
FR2805653A1 (fr) | 2000-02-28 | 2001-08-31 | St Microelectronics Sa | Memoire serie programmable et effacable electriquement a lecture par anticipation |
TW546778B (en) * | 2001-04-20 | 2003-08-11 | Koninkl Philips Electronics Nv | Two-transistor flash cell |
TW484213B (en) | 2001-04-24 | 2002-04-21 | Ememory Technology Inc | Forming method and operation method of trench type separation gate nonvolatile flash memory cell structure |
US7006381B2 (en) | 2001-11-27 | 2006-02-28 | Koninklijke Philips Electronics N.V. | Semiconductor device having a byte-erasable EEPROM memory |
US7339822B2 (en) | 2002-12-06 | 2008-03-04 | Sandisk Corporation | Current-limited latch |
US6894339B2 (en) | 2003-01-02 | 2005-05-17 | Actrans System Inc. | Flash memory with trench select gate and fabrication process |
US7193900B2 (en) * | 2005-01-18 | 2007-03-20 | Mammen Thomas | CACT-TG (CATT) low voltage NVM cells |
CN100514495C (zh) | 2005-01-20 | 2009-07-15 | 义隆电子股份有限公司 | 应用在非挥发性分离栅存储器的写入操作电路及方法 |
US7342272B2 (en) | 2005-08-31 | 2008-03-11 | Micron Technology, Inc. | Flash memory with recessed floating gate |
CN100477232C (zh) | 2006-01-19 | 2009-04-08 | 力晶半导体股份有限公司 | 非挥发性存储器及其制造方法与操作方法 |
US7253057B1 (en) | 2006-04-06 | 2007-08-07 | Atmel Corporation | Memory cell with reduced size and standby current |
US7696044B2 (en) | 2006-09-19 | 2010-04-13 | Sandisk Corporation | Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches |
US8093649B2 (en) | 2008-03-28 | 2012-01-10 | National Tsing Hua University | Flash memory cell |
US7851846B2 (en) | 2008-12-03 | 2010-12-14 | Silicon Storage Technology, Inc. | Non-volatile memory cell with buried select gate, and method of making same |
US8901634B2 (en) | 2012-03-05 | 2014-12-02 | Stmicroelectronics (Rousset) Sas | Nonvolatile memory cells with a vertical selection gate of variable depth |
FR2987697A1 (fr) * | 2012-03-05 | 2013-09-06 | St Microelectronics Rousset | Procede de fabrication d'une memoire non volatile |
US8940604B2 (en) | 2012-03-05 | 2015-01-27 | Stmicroelectronics (Rousset) Sas | Nonvolatile memory comprising mini wells at a floating potential |
FR3012672B1 (fr) | 2013-10-31 | 2017-04-14 | Stmicroelectronics Rousset | Cellule memoire comprenant des grilles de controle horizontale et verticale non auto-alignees |
FR3012673B1 (fr) | 2013-10-31 | 2017-04-14 | St Microelectronics Rousset | Memoire programmable par injection de porteurs chauds et procede de programmation d'une telle memoire |
FR3017746B1 (fr) | 2014-02-18 | 2016-05-27 | Stmicroelectronics Rousset | Cellule memoire verticale ayant un implant drain-source flottant non auto-aligne |
-
2014
- 2014-02-18 FR FR1451297A patent/FR3017746B1/fr active Active
-
2015
- 2015-02-18 US US14/625,356 patent/US9543311B2/en active Active
-
2016
- 2016-11-30 US US15/365,768 patent/US9876122B2/en active Active
-
2017
- 2017-12-22 US US15/852,826 patent/US10192999B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR3017746A1 (fr) | 2015-08-21 |
US20170084749A1 (en) | 2017-03-23 |
US20180145183A1 (en) | 2018-05-24 |
US9876122B2 (en) | 2018-01-23 |
US10192999B2 (en) | 2019-01-29 |
US9543311B2 (en) | 2017-01-10 |
US20150236031A1 (en) | 2015-08-20 |
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