FR3025927B1 - Programmation de cellules anti-fusibles - Google Patents

Programmation de cellules anti-fusibles

Info

Publication number
FR3025927B1
FR3025927B1 FR1458589A FR1458589A FR3025927B1 FR 3025927 B1 FR3025927 B1 FR 3025927B1 FR 1458589 A FR1458589 A FR 1458589A FR 1458589 A FR1458589 A FR 1458589A FR 3025927 B1 FR3025927 B1 FR 3025927B1
Authority
FR
France
Prior art keywords
fusible
cells
programming anti
programming
fusible cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1458589A
Other languages
English (en)
Other versions
FR3025927A1 (fr
Inventor
Stephane Lacouture
Joel Damiens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1458589A priority Critical patent/FR3025927B1/fr
Priority to US14/844,442 priority patent/US9536622B2/en
Publication of FR3025927A1 publication Critical patent/FR3025927A1/fr
Application granted granted Critical
Publication of FR3025927B1 publication Critical patent/FR3025927B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
FR1458589A 2014-09-12 2014-09-12 Programmation de cellules anti-fusibles Expired - Fee Related FR3025927B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1458589A FR3025927B1 (fr) 2014-09-12 2014-09-12 Programmation de cellules anti-fusibles
US14/844,442 US9536622B2 (en) 2014-09-12 2015-09-03 Programming of antifuse cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1458589A FR3025927B1 (fr) 2014-09-12 2014-09-12 Programmation de cellules anti-fusibles

Publications (2)

Publication Number Publication Date
FR3025927A1 FR3025927A1 (fr) 2016-03-18
FR3025927B1 true FR3025927B1 (fr) 2018-01-12

Family

ID=52589470

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1458589A Expired - Fee Related FR3025927B1 (fr) 2014-09-12 2014-09-12 Programmation de cellules anti-fusibles

Country Status (2)

Country Link
US (1) US9536622B2 (fr)
FR (1) FR3025927B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110379452B (zh) * 2019-07-22 2021-04-16 潍坊歌尔微电子有限公司 反熔丝胞电路及集成芯片
US11881274B2 (en) * 2021-11-15 2024-01-23 Ememory Technology Inc. Program control circuit for antifuse-type one time programming memory cell array

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6735546B2 (en) * 2001-08-31 2004-05-11 Matrix Semiconductor, Inc. Memory device and method for temperature-based control over write and/or read operations
US7075276B2 (en) * 2003-07-03 2006-07-11 Isine, Inc. On-chip compensation control for voltage regulation
JP4772328B2 (ja) * 2005-01-13 2011-09-14 株式会社東芝 不揮発性半導体記憶装置
US9099175B1 (en) * 2011-03-01 2015-08-04 Adesto Technologies Corporation Memory devices and methods for read and write operation to memory elements having dynamic change in property

Also Published As

Publication number Publication date
US20160078963A1 (en) 2016-03-17
US9536622B2 (en) 2017-01-03
FR3025927A1 (fr) 2016-03-18

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