DE60224622D1 - Einmal programmierbarer Speicher - Google Patents

Einmal programmierbarer Speicher

Info

Publication number
DE60224622D1
DE60224622D1 DE60224622T DE60224622T DE60224622D1 DE 60224622 D1 DE60224622 D1 DE 60224622D1 DE 60224622 T DE60224622 T DE 60224622T DE 60224622 T DE60224622 T DE 60224622T DE 60224622 D1 DE60224622 D1 DE 60224622D1
Authority
DE
Germany
Prior art keywords
programmable memory
time programmable
time
memory
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60224622T
Other languages
English (en)
Other versions
DE60224622T2 (de
Inventor
Lung T Tran
Thomas C Anthony
Frederick A Perner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE60224622D1 publication Critical patent/DE60224622D1/de
Publication of DE60224622T2 publication Critical patent/DE60224622T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE60224622T 2001-08-09 2002-08-05 Einmal programmierbarer Speicher Expired - Fee Related DE60224622T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US924577 2001-08-09
US09/924,577 US6584029B2 (en) 2001-08-09 2001-08-09 One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells

Publications (2)

Publication Number Publication Date
DE60224622D1 true DE60224622D1 (de) 2008-03-06
DE60224622T2 DE60224622T2 (de) 2008-10-23

Family

ID=25450393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60224622T Expired - Fee Related DE60224622T2 (de) 2001-08-09 2002-08-05 Einmal programmierbarer Speicher

Country Status (7)

Country Link
US (1) US6584029B2 (de)
EP (1) EP1286356B1 (de)
JP (1) JP4047657B2 (de)
KR (1) KR20030014653A (de)
CN (1) CN100401426C (de)
DE (1) DE60224622T2 (de)
TW (1) TWI275096B (de)

Families Citing this family (74)

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US6927430B2 (en) * 2001-06-28 2005-08-09 Sharp Laboratories Of America, Inc. Shared bit line cross-point memory array incorporating P/N junctions
JP2003086669A (ja) * 2001-09-10 2003-03-20 Mitsubishi Electric Corp 電子装置およびその製造方法
US6611039B2 (en) * 2001-09-28 2003-08-26 Hewlett-Packard Development Company, L.P. Vertically oriented nano-fuse and nano-resistor circuit elements
US6580144B2 (en) * 2001-09-28 2003-06-17 Hewlett-Packard Development Company, L.P. One time programmable fuse/anti-fuse combination based memory cell
US6821848B2 (en) * 2002-04-02 2004-11-23 Hewlett-Packard Development Company, L.P. Tunnel-junction structures and methods
JP3737448B2 (ja) * 2002-04-18 2006-01-18 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP4042478B2 (ja) * 2002-06-19 2008-02-06 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
US7079442B2 (en) * 2002-08-02 2006-07-18 Unity Semiconductor Corporation Layout of driver sets in a cross point memory array
US8637366B2 (en) * 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US20050226067A1 (en) 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
WO2004061851A2 (en) * 2002-12-19 2004-07-22 Matrix Semiconductor, Inc An improved method for making high-density nonvolatile memory
US7285464B2 (en) * 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
US7618850B2 (en) * 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US7800932B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US20070164388A1 (en) * 2002-12-19 2007-07-19 Sandisk 3D Llc Memory cell comprising a diode fabricated in a low resistivity, programmed state
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
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JP4489362B2 (ja) * 2003-03-03 2010-06-23 シャープ株式会社 不揮発性記憶素子、不揮発性記憶回路、不揮発性記憶カードおよび記録再生装置
US20050087836A1 (en) * 2003-10-22 2005-04-28 Taiwan Semiconductor Manufacturing Co. Electrically programmable polysilicon fuse with multiple level resistance and programming
CN100524350C (zh) * 2003-10-31 2009-08-05 Nxp股份有限公司 用于存储和/或改变存储器的状态信息的方法以及集成电路和数据载体
US7009278B2 (en) * 2003-11-24 2006-03-07 Sharp Laboratories Of America, Inc. 3d rram
JP4124743B2 (ja) 2004-01-21 2008-07-23 株式会社ルネサステクノロジ 相変化メモリ
CN100426510C (zh) * 2004-07-29 2008-10-15 上海华虹Nec电子有限公司 沟道注入式可一次编程器件
US7136322B2 (en) * 2004-08-05 2006-11-14 Analog Devices, Inc. Programmable semi-fusible link read only memory and method of margin testing same
US7110278B2 (en) * 2004-09-29 2006-09-19 Intel Corporation Crosspoint memory array utilizing one time programmable antifuse cells
US7321502B2 (en) * 2004-09-30 2008-01-22 Intel Corporation Non volatile data storage through dielectric breakdown
US7307268B2 (en) * 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
JP2006324501A (ja) * 2005-05-19 2006-11-30 Toshiba Corp 相変化メモリおよびその製造方法
EP1886261B1 (de) * 2005-05-31 2011-11-16 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement
US7453755B2 (en) * 2005-07-01 2008-11-18 Sandisk 3D Llc Memory cell with high-K antifuse for reverse bias programming
US7800934B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Programming methods to increase window for reverse write 3D cell
US7778069B2 (en) * 2005-10-17 2010-08-17 Renesas Technology Corp. Semiconductor device and its fabrication method
JP4939324B2 (ja) * 2005-12-02 2012-05-23 シャープ株式会社 可変抵抗素子及びその製造方法
US7486534B2 (en) * 2005-12-08 2009-02-03 Macronix International Co., Ltd. Diode-less array for one-time programmable memory
US7968967B2 (en) * 2006-07-17 2011-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable anti-fuse formed using damascene process
US20080037324A1 (en) * 2006-08-14 2008-02-14 Geoffrey Wen-Tai Shuy Electrical thin film memory
EP2076924B1 (de) * 2006-11-17 2017-03-08 Semiconductor Energy Laboratory Co, Ltd. Nichtlöschbares Speicherelement und Verfahren zu seiner Herstellung
KR101485926B1 (ko) * 2007-02-02 2015-02-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
JP5255870B2 (ja) * 2007-03-26 2013-08-07 株式会社半導体エネルギー研究所 記憶素子の作製方法
US7859883B2 (en) * 2007-05-14 2010-12-28 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Recordable electrical memory
US7830697B2 (en) * 2007-06-25 2010-11-09 Sandisk 3D Llc High forward current diodes for reverse write 3D cell
US7684226B2 (en) * 2007-06-25 2010-03-23 Sandisk 3D Llc Method of making high forward current diodes for reverse write 3D cell
US8102694B2 (en) * 2007-06-25 2012-01-24 Sandisk 3D Llc Nonvolatile memory device containing carbon or nitrogen doped diode
US8072791B2 (en) * 2007-06-25 2011-12-06 Sandisk 3D Llc Method of making nonvolatile memory device containing carbon or nitrogen doped diode
US7800939B2 (en) * 2007-06-29 2010-09-21 Sandisk 3D Llc Method of making 3D R/W cell with reduced reverse leakage
US7759666B2 (en) * 2007-06-29 2010-07-20 Sandisk 3D Llc 3D R/W cell with reduced reverse leakage
US20090039462A1 (en) * 2007-08-07 2009-02-12 Mediatek Inc. Efuse devices and efuse arrays thereof and efuse blowing methods
US7846782B2 (en) 2007-09-28 2010-12-07 Sandisk 3D Llc Diode array and method of making thereof
US20090180313A1 (en) * 2008-01-15 2009-07-16 Wim Deweerd Chalcogenide anti-fuse
JP5248170B2 (ja) * 2008-04-03 2013-07-31 ルネサスエレクトロニクス株式会社 半導体装置
US7830698B2 (en) * 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
US8450835B2 (en) * 2008-04-29 2013-05-28 Sandisk 3D Llc Reverse leakage reduction and vertical height shrinking of diode with halo doping
JP2010028105A (ja) * 2008-06-20 2010-02-04 Semiconductor Energy Lab Co Ltd 記憶素子及び記憶素子の作製方法
US7715219B2 (en) 2008-06-30 2010-05-11 Allegro Microsystems, Inc. Non-volatile programmable memory cell and memory array
JP2010123753A (ja) * 2008-11-19 2010-06-03 Elpida Memory Inc 半導体装置、半導体装置におけるアンチヒューズ素子のプログラム方法、及び半導体装置の製造方法
US8054706B2 (en) * 2009-03-19 2011-11-08 Seagate Technology Llc Sensor protection using a non-volatile memory cell
JP2010232408A (ja) * 2009-03-27 2010-10-14 Elpida Memory Inc 半導体装置及びその製造方法
US8390326B2 (en) * 2009-05-05 2013-03-05 William Marsh Rice University Method for fabrication of a semiconductor element and structure thereof
US7973559B2 (en) * 2009-05-05 2011-07-05 William Marsh Rice University Method for fabrication of a semiconductor element and structure thereof
US8635426B2 (en) * 2009-11-04 2014-01-21 Daniel Robert Shepard Diagonally accessed memory array circuit
KR20110054088A (ko) 2009-11-17 2011-05-25 삼성전자주식회사 비휘발성 메모리 소자
US8344428B2 (en) 2009-11-30 2013-01-01 International Business Machines Corporation Nanopillar E-fuse structure and process
KR101363831B1 (ko) * 2010-05-20 2014-02-18 매그나칩 반도체 유한회사 원-타임 프로그래머블 기능을 갖는 메모리 장치, 이를 구비한 표시패널 구동 칩 및 표시장치
TWI480980B (zh) * 2012-09-26 2015-04-11 Lin Chrong Jung 記憶體陣列及其非揮發性記憶裝置
US9761595B2 (en) * 2013-02-21 2017-09-12 Infineon Technologies Ag One-time programming device and a semiconductor device
US9214567B2 (en) 2013-09-06 2015-12-15 Globalfoundries Inc. Nanowire compatible E-fuse
US9806256B1 (en) 2016-10-21 2017-10-31 Sandisk Technologies Llc Resistive memory device having sidewall spacer electrode and method of making thereof
CN108735662B (zh) * 2018-05-22 2021-04-16 武汉新芯集成电路制造有限公司 电可编程熔丝的编程方法
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Also Published As

Publication number Publication date
EP1286356A2 (de) 2003-02-26
EP1286356B1 (de) 2008-01-16
TWI275096B (en) 2007-03-01
JP4047657B2 (ja) 2008-02-13
US6584029B2 (en) 2003-06-24
DE60224622T2 (de) 2008-10-23
EP1286356A3 (de) 2003-05-07
US20030031074A1 (en) 2003-02-13
CN1405779A (zh) 2003-03-26
KR20030014653A (ko) 2003-02-19
JP2003142653A (ja) 2003-05-16
CN100401426C (zh) 2008-07-09

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, US

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee