DE60028111D1 - Ferroelektrischer Speicher - Google Patents

Ferroelektrischer Speicher

Info

Publication number
DE60028111D1
DE60028111D1 DE60028111T DE60028111T DE60028111D1 DE 60028111 D1 DE60028111 D1 DE 60028111D1 DE 60028111 T DE60028111 T DE 60028111T DE 60028111 T DE60028111 T DE 60028111T DE 60028111 D1 DE60028111 D1 DE 60028111D1
Authority
DE
Germany
Prior art keywords
ferroelectric storage
ferroelectric
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60028111T
Other languages
English (en)
Other versions
DE60028111T2 (de
Inventor
Masao Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE60028111D1 publication Critical patent/DE60028111D1/de
Publication of DE60028111T2 publication Critical patent/DE60028111T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
DE60028111T 1999-03-19 2000-03-17 Ferroelektrischer Speicher Expired - Lifetime DE60028111T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07579199A JP3217326B2 (ja) 1999-03-19 1999-03-19 電磁波シールド構造を有する強誘電体メモリ
JP7579199 1999-03-19

Publications (2)

Publication Number Publication Date
DE60028111D1 true DE60028111D1 (de) 2006-06-29
DE60028111T2 DE60028111T2 (de) 2006-09-28

Family

ID=13586402

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60028111T Expired - Lifetime DE60028111T2 (de) 1999-03-19 2000-03-17 Ferroelektrischer Speicher

Country Status (6)

Country Link
US (1) US6420741B1 (de)
EP (1) EP1039476B1 (de)
JP (1) JP3217326B2 (de)
KR (1) KR100666899B1 (de)
DE (1) DE60028111T2 (de)
TW (1) TW465097B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040119105A1 (en) * 2002-12-18 2004-06-24 Wilson Dennis Robert Ferroelectric memory
US7973348B1 (en) * 2004-08-06 2011-07-05 Dalton David I Single transistor charge transfer random access memory
JP4954537B2 (ja) * 2004-12-03 2012-06-20 株式会社半導体エネルギー研究所 半導体装置
KR101169262B1 (ko) 2004-12-03 2012-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI411964B (zh) 2006-02-10 2013-10-11 Semiconductor Energy Lab 半導體裝置
DE102006022360B4 (de) 2006-05-12 2009-07-09 Infineon Technologies Ag Abschirmvorrichtung
US8853833B2 (en) 2011-06-13 2014-10-07 Micron Technology, Inc. Electromagnetic shield and associated methods
JP6762004B2 (ja) * 2016-03-11 2020-09-30 国立大学法人九州工業大学 半導体集積回路装置及びその製造方法
KR20180100982A (ko) 2017-03-03 2018-09-12 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US10229874B1 (en) * 2018-03-22 2019-03-12 Micron Technology, Inc. Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arrays
KR102310642B1 (ko) 2019-08-13 2021-10-12 정문성 수탉 고환 검사용 구속장치
KR102310643B1 (ko) 2019-08-13 2021-10-08 정문성 수탉 고환 검사용 구속장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3811076A (en) 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
US4344155A (en) * 1979-12-31 1982-08-10 Compagnie Internationale Pour L'informatique Cii-Honeywell Bull (Societe Anonyme) Method of and apparatus for inscribing a control character in a memory
JPH0779138B2 (ja) 1987-08-31 1995-08-23 工業技術院長 不揮発性半導体メモリ素子
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
JPH0435063A (ja) 1990-05-31 1992-02-05 Sanyo Electric Co Ltd 半導体メモリ
JP3131982B2 (ja) 1990-08-21 2001-02-05 セイコーエプソン株式会社 半導体装置、半導体メモリ及び半導体装置の製造方法
JPH0685205A (ja) 1992-08-28 1994-03-25 Mitsubishi Electric Corp 半導体記憶装置
JPH06268169A (ja) 1993-03-16 1994-09-22 Hitachi Ltd 半導体集積回路装置
JP3528257B2 (ja) 1994-07-29 2004-05-17 Ｎｅｃトーキン株式会社 プリント配線基板
US5899755A (en) * 1996-03-14 1999-05-04 Johnstech International Corporation Integrated circuit test socket with enhanced noise imminity
US6038006A (en) * 1996-09-02 2000-03-14 Casio Computer Co., Ltd. Liquid crystal display device with light shield and color filter overlapping two edges of pixel electrode
KR100295568B1 (ko) * 1997-02-03 2001-09-07 니시무로 타이죠 반도체 장치 및 그의 제조방법
EP0893832A3 (de) * 1997-07-24 1999-11-03 Matsushita Electronics Corporation Halbleiteranordnung, die eine Kapazität enthält und Verfahren zur Herstellung

Also Published As

Publication number Publication date
DE60028111T2 (de) 2006-09-28
JP3217326B2 (ja) 2001-10-09
EP1039476B1 (de) 2006-05-24
KR100666899B1 (ko) 2007-01-11
TW465097B (en) 2001-11-21
EP1039476A2 (de) 2000-09-27
US20020070396A1 (en) 2002-06-13
US6420741B1 (en) 2002-07-16
KR20000062546A (ko) 2000-10-25
JP2000269446A (ja) 2000-09-29
EP1039476A3 (de) 2001-01-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE