ITMI20022240A1 - Architettura di memoria flash con cancellazione di modo - Google Patents

Architettura di memoria flash con cancellazione di modo

Info

Publication number
ITMI20022240A1
ITMI20022240A1 IT002240A ITMI20022240A ITMI20022240A1 IT MI20022240 A1 ITMI20022240 A1 IT MI20022240A1 IT 002240 A IT002240 A IT 002240A IT MI20022240 A ITMI20022240 A IT MI20022240A IT MI20022240 A1 ITMI20022240 A1 IT MI20022240A1
Authority
IT
Italy
Prior art keywords
flash memory
memory architecture
mode cancellation
cancellation
mode
Prior art date
Application number
IT002240A
Other languages
English (en)
Inventor
Simone Bartoli
Lorenzo Bedarida
Sabina Mognoni
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to IT002240A priority Critical patent/ITMI20022240A1/it
Priority to US10/352,734 priority patent/US6804148B2/en
Priority to CNB038243342A priority patent/CN100530430C/zh
Priority to CA002500798A priority patent/CA2500798A1/en
Priority to PCT/US2003/027843 priority patent/WO2004038727A1/en
Priority to KR1020057006997A priority patent/KR20050059287A/ko
Priority to JP2004546724A priority patent/JP2006504218A/ja
Priority to EP03809517A priority patent/EP1556865A4/en
Priority to AU2003265938A priority patent/AU2003265938A1/en
Priority to TW092127289A priority patent/TWI317130B/zh
Publication of ITMI20022240A1 publication Critical patent/ITMI20022240A1/it
Priority to NO20052450A priority patent/NO20052450L/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
IT002240A 2002-10-22 2002-10-22 Architettura di memoria flash con cancellazione di modo ITMI20022240A1 (it)

Priority Applications (11)

Application Number Priority Date Filing Date Title
IT002240A ITMI20022240A1 (it) 2002-10-22 2002-10-22 Architettura di memoria flash con cancellazione di modo
US10/352,734 US6804148B2 (en) 2002-10-22 2003-01-27 Flash memory architecture with page mode erase using NMOS and PMOS row decoding scheme
KR1020057006997A KR20050059287A (ko) 2002-10-22 2003-09-04 Ｎｍｏｓ 및 ｐｍｏｓ 행 디코딩 방법을 이용한 페이지모드 소거를 갖는 플래시 메모리 아키텍쳐
CA002500798A CA2500798A1 (en) 2002-10-22 2003-09-04 A flash memory architecture with page mode erase using nmos and pmos row decoding scheme
PCT/US2003/027843 WO2004038727A1 (en) 2002-10-22 2003-09-04 A flash memory architecture with page mode erase using nmos and pmos row decoding scheme
CNB038243342A CN100530430C (zh) 2002-10-22 2003-09-04 使用nmos和pmos行解码方案带页面方式擦除的闪存体系结构
JP2004546724A JP2006504218A (ja) 2002-10-22 2003-09-04 Ｎｍｏｓおよびｐｍｏｓの行デコード機構を使用するページモード消去を備えたフラッシュメモリアーキテクチャ
EP03809517A EP1556865A4 (en) 2002-10-22 2003-09-04 FLASH MEMORY ARCHITECTURE WITH SIDE MODES LAYOUT USING AN NMOS AND PMOS LINE DECODER CHEMISTRY
AU2003265938A AU2003265938A1 (en) 2002-10-22 2003-09-04 A flash memory architecture with page mode erase using nmos and pmos row decoding scheme
TW092127289A TWI317130B (en) 2002-10-22 2003-10-02 A flash memory architecture with page mode erase using nmos and pmos row decoding scheme
NO20052450A NO20052450L (no) 2002-10-22 2005-05-20 Flashminne-arkitektur med avkodingsplan for sletting i sidemodus ved hjelp av NMOS og PMOS radarkoding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002240A ITMI20022240A1 (it) 2002-10-22 2002-10-22 Architettura di memoria flash con cancellazione di modo

Publications (1)

Publication Number Publication Date
ITMI20022240A1 true ITMI20022240A1 (it) 2004-04-23

Family

ID=32089010

Family Applications (1)

Application Number Title Priority Date Filing Date
IT002240A ITMI20022240A1 (it) 2002-10-22 2002-10-22 Architettura di memoria flash con cancellazione di modo

Country Status (11)

Country Link
US (1) US6804148B2 (it)
EP (1) EP1556865A4 (it)
JP (1) JP2006504218A (it)
KR (1) KR20050059287A (it)
CN (1) CN100530430C (it)
AU (1) AU2003265938A1 (it)
CA (1) CA2500798A1 (it)
IT (1) ITMI20022240A1 (it)
NO (1) NO20052450L (it)
TW (1) TWI317130B (it)
WO (1) WO2004038727A1 (it)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6915338B1 (en) * 2000-10-24 2005-07-05 Microsoft Corporation System and method providing automatic policy enforcement in a multi-computer service application
US7319616B2 (en) * 2003-11-13 2008-01-15 Intel Corporation Negatively biasing deselected memory cells
JP4662437B2 (ja) * 2004-11-30 2011-03-30 ルネサスエレクトロニクス株式会社 半導体集積回路
ITMI20050868A1 (it) * 2005-05-13 2006-11-14 St Microelectronics Srl Circuito di decodifica di riga
US7548484B2 (en) * 2005-09-29 2009-06-16 Hynix Semiconductor Inc. Semiconductor memory device having column decoder
US8279704B2 (en) * 2006-07-31 2012-10-02 Sandisk 3D Llc Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same
US7486587B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Dual data-dependent busses for coupling read/write circuits to a memory array
US7499366B2 (en) 2006-07-31 2009-03-03 Sandisk 3D Llc Method for using dual data-dependent busses for coupling read/write circuits to a memory array
US7463546B2 (en) 2006-07-31 2008-12-09 Sandisk 3D Llc Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders
US7554832B2 (en) * 2006-07-31 2009-06-30 Sandisk 3D Llc Passive element memory array incorporating reversible polarity word line and bit line decoders
US7593259B2 (en) 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
KR100776900B1 (ko) * 2006-10-31 2007-11-19 주식회사 하이닉스반도체 플래시 메모리 소자 및 이를 이용한 프로그램/독출 방법
US7414891B2 (en) 2007-01-04 2008-08-19 Atmel Corporation Erase verify method for NAND-type flash memories
US7882405B2 (en) * 2007-02-16 2011-02-01 Atmel Corporation Embedded architecture with serial interface for testing flash memories
US7577059B2 (en) * 2007-02-27 2009-08-18 Mosaid Technologies Incorporated Decoding control with address transition detection in page erase function
US20080232169A1 (en) * 2007-03-20 2008-09-25 Atmel Corporation Nand-like memory array employing high-density nor-like memory devices
TWI417894B (zh) * 2007-03-21 2013-12-01 Ibm 於動態隨機存取記憶體架構之定址期間實施省電之結構及方法
US7577029B2 (en) * 2007-05-04 2009-08-18 Mosaid Technologies Incorporated Multi-level cell access buffer with dual function
US9588883B2 (en) 2011-09-23 2017-03-07 Conversant Intellectual Property Management Inc. Flash memory system
JP5908803B2 (ja) 2012-06-29 2016-04-26 株式会社フローディア 不揮発性半導体記憶装置
US8737137B1 (en) 2013-01-22 2014-05-27 Freescale Semiconductor, Inc. Flash memory with bias voltage for word line/row driver
KR102210520B1 (ko) 2013-12-19 2021-02-02 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 소거 방법
FR3029000B1 (fr) * 2014-11-24 2017-12-22 Stmicroelectronics Rousset Dispositif de memoire non volatile compact
US11087207B2 (en) * 2018-03-14 2021-08-10 Silicon Storage Technology, Inc. Decoders for analog neural memory in deep learning artificial neural network
US10482968B1 (en) * 2018-11-22 2019-11-19 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. Local x-decoder and related memory system
CN109448772A (zh) * 2018-11-28 2019-03-08 合肥博雅半导体有限公司 一种减少电压差的存储器字线选择电路及芯片和存储器
US11114143B2 (en) * 2019-02-22 2021-09-07 Intel Corporation Bipolar decoder for crosspoint memory cells
CN112151095A (zh) 2019-06-26 2020-12-29 北京知存科技有限公司 存算一体芯片、存储单元阵列结构

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438573A (en) * 1991-09-13 1995-08-01 Sundisk Corporation Flash EEPROM array data and header file structure
US5661683A (en) * 1996-02-05 1997-08-26 Integrated Silicon Solution Inc. On-chip positive and negative high voltage wordline x-decoding for EPROM/FLASH
US5959891A (en) * 1996-08-16 1999-09-28 Altera Corporation Evaluation of memory cell characteristics
JP2000504504A (ja) * 1997-02-12 2000-04-11 ヒュンダイ エレクトロニクス アメリカ インコーポレイテッド 不揮発性メモリ構造
US5886923A (en) * 1997-10-27 1999-03-23 Integrated Silicon Solution Inc. Local row decoder for sector-erase fowler-nordheim tunneling based flash memory
US5903497A (en) * 1997-12-22 1999-05-11 Programmable Microelectronics Corporation Integrated program verify page buffer
US6359810B1 (en) * 1998-03-13 2002-03-19 Atmel Corporation Page mode erase in a flash memory array
US5991198A (en) * 1998-04-02 1999-11-23 Nexflash Technologies, Inc. Local row decoder and associated control logic for fowler-nordheim tunneling based flash memory
US5999451A (en) * 1998-07-13 1999-12-07 Macronix International Co., Ltd. Byte-wide write scheme for a page flash device
EP1028433B1 (en) * 1999-02-10 2004-04-28 SGS-THOMSON MICROELECTRONICS s.r.l. Nonvolatile memory and reading method therefor
DE69923548D1 (de) * 1999-06-22 2005-03-10 St Microelectronics Srl Flashkompatibler EEPROM Speicher
KR100308480B1 (ko) * 1999-07-13 2001-11-01 윤종용 고집적화에 적합한 행 디코딩 구조를 갖는 플래시 메모리 장치
JP3859912B2 (ja) * 1999-09-08 2006-12-20 株式会社東芝 不揮発性半導体記憶装置
TW540053B (en) * 2000-07-13 2003-07-01 Samsung Electronics Co Ltd Row decoder of a NOR-type flash memory device
KR100381962B1 (ko) * 2000-08-07 2003-05-01 삼성전자주식회사 비휘발성 메모리 장치의 로우 디코더

Also Published As

Publication number Publication date
EP1556865A1 (en) 2005-07-27
TW200409126A (en) 2004-06-01
AU2003265938A1 (en) 2004-05-13
WO2004038727A1 (en) 2004-05-06
US20040076037A1 (en) 2004-04-22
CA2500798A1 (en) 2004-05-06
CN1689115A (zh) 2005-10-26
NO20052450D0 (no) 2005-05-20
JP2006504218A (ja) 2006-02-02
KR20050059287A (ko) 2005-06-17
TWI317130B (en) 2009-11-11
NO20052450L (no) 2005-05-20
US6804148B2 (en) 2004-10-12
EP1556865A4 (en) 2010-06-30
CN100530430C (zh) 2009-08-19

Similar Documents

Publication Publication Date Title
ITMI20022240A1 (it) Architettura di memoria flash con cancellazione di modo
DE60222947D1 (de) Halbleiterspeicher
DE60315102D1 (de) Speichersystem
DE60334100D1 (de) Rückspiegelanordnungen
NO20031285L (no) Isolasjons-omlöps-overgangsskjöt
NO20051885L (no) Lastehylle
DE50306063D1 (de) Abgasnachbehandlungsanordnung
DE60315651D1 (de) Halbleiterspeicher
DE60323806D1 (de) Speichersystem
DE60336787D1 (de) Halbleiterspeicher
DE60301502D1 (de) Alaun pellets
DE60320975D1 (de) Hydrospeicher
NO20020357D0 (no) Antenneanordning
DE60331783D1 (de) Munitionsanhänger
DE60321010D1 (de) Scan-testbarer FIFO-Speicher
DE50301969D1 (de) Kommissioniergerät
DE60210170D1 (de) Speichersystem
DE50212115D1 (de) Speicheranordnung
DE50305011D1 (de) Tunnelstruktur
DE60225416D1 (de) Halbleiterspeicher
DE60320433D1 (de) Rückspiegelanordnung
NO20024789D0 (no) Stötfanger
AT500592B8 (de) Entstörgerät
DE50301653D1 (de) Wohnmobil
ATA12682002A (de) Schichtenspeicher