FR2851843B1 - Memoire flash comprenant un algorithme de verification d'effacement integre dans un algorithme de programmation - Google Patents

Memoire flash comprenant un algorithme de verification d'effacement integre dans un algorithme de programmation

Info

Publication number
FR2851843B1
FR2851843B1 FR0302398A FR0302398A FR2851843B1 FR 2851843 B1 FR2851843 B1 FR 2851843B1 FR 0302398 A FR0302398 A FR 0302398A FR 0302398 A FR0302398 A FR 0302398A FR 2851843 B1 FR2851843 B1 FR 2851843B1
Authority
FR
France
Prior art keywords
algorithm
flash memory
integrated
erasure verification
programming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0302398A
Other languages
English (en)
Other versions
FR2851843A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0302398A priority Critical patent/FR2851843B1/fr
Priority to US10/789,449 priority patent/US6891756B2/en
Publication of FR2851843A1 publication Critical patent/FR2851843A1/fr
Application granted granted Critical
Publication of FR2851843B1 publication Critical patent/FR2851843B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
FR0302398A 2003-02-27 2003-02-27 Memoire flash comprenant un algorithme de verification d'effacement integre dans un algorithme de programmation Expired - Fee Related FR2851843B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0302398A FR2851843B1 (fr) 2003-02-27 2003-02-27 Memoire flash comprenant un algorithme de verification d'effacement integre dans un algorithme de programmation
US10/789,449 US6891756B2 (en) 2003-02-27 2004-02-26 Flash memory comprising an erase verify algorithm integrated into a programming algorithm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0302398A FR2851843B1 (fr) 2003-02-27 2003-02-27 Memoire flash comprenant un algorithme de verification d'effacement integre dans un algorithme de programmation

Publications (2)

Publication Number Publication Date
FR2851843A1 FR2851843A1 (fr) 2004-09-03
FR2851843B1 true FR2851843B1 (fr) 2005-08-05

Family

ID=32843029

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0302398A Expired - Fee Related FR2851843B1 (fr) 2003-02-27 2003-02-27 Memoire flash comprenant un algorithme de verification d'effacement integre dans un algorithme de programmation

Country Status (2)

Country Link
US (1) US6891756B2 (fr)
FR (1) FR2851843B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7391654B2 (en) * 2005-05-11 2008-06-24 Micron Technology, Inc. Memory block erasing in a flash memory device
FR2894710A1 (fr) * 2005-12-14 2007-06-15 St Microelectronics Sa Procede et dispositif de verification de l'execution d'une commande d'ecriture dans une memoire
US8130551B2 (en) 2010-03-31 2012-03-06 Sandisk Technologies Inc. Extra dummy erase pulses after shallow erase-verify to avoid sensing deep erased threshold voltage
US9159442B2 (en) * 2011-11-11 2015-10-13 Microchip Technology Incorporated Serial memory with fast read with look-ahead
JP6384232B2 (ja) * 2014-09-22 2018-09-05 株式会社ソシオネクスト 半導体装置及びその制御方法
JP6846321B2 (ja) 2017-09-21 2021-03-24 ルネサスエレクトロニクス株式会社 半導体記憶装置、及び半導体記憶装置の制御方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4460982A (en) * 1982-05-20 1984-07-17 Intel Corporation Intelligent electrically programmable and electrically erasable ROM
US4763305A (en) * 1985-11-27 1988-08-09 Motorola, Inc. Intelligent write in an EEPROM with data and erase check
EP0782147A1 (fr) * 1995-12-29 1997-07-02 STMicroelectronics S.r.l. Méthode et dispositif de programmation pour la détection d'une erreur dans une mémoire
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
JP4251717B2 (ja) * 1999-06-03 2009-04-08 富士通マイクロエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2002025282A (ja) * 2000-07-12 2002-01-25 Hitachi Ltd 不揮発性半導体記憶装置
ITRM20010647A1 (it) * 2001-11-02 2003-05-02 Micron Technology Inc Verifica di cancellazione a blocchi per memorie flash.

Also Published As

Publication number Publication date
FR2851843A1 (fr) 2004-09-03
US6891756B2 (en) 2005-05-10
US20040264250A1 (en) 2004-12-30

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Effective date: 20101029