DE69710697D1 - Ladungspumpe mit negativer Ausgangsspannung, insbesondere für Flash-EEPROM-Speicher - Google Patents

Ladungspumpe mit negativer Ausgangsspannung, insbesondere für Flash-EEPROM-Speicher

Info

Publication number
DE69710697D1
DE69710697D1 DE69710697T DE69710697T DE69710697D1 DE 69710697 D1 DE69710697 D1 DE 69710697D1 DE 69710697 T DE69710697 T DE 69710697T DE 69710697 T DE69710697 T DE 69710697T DE 69710697 D1 DE69710697 D1 DE 69710697D1
Authority
DE
Germany
Prior art keywords
output voltage
charge pump
negative output
eeprom memory
flash eeprom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69710697T
Other languages
English (en)
Other versions
DE69710697T2 (de
Inventor
Stefano Menichelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Consorzio Eagle
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consorzio Eagle, Texas Instruments Inc filed Critical Consorzio Eagle
Publication of DE69710697D1 publication Critical patent/DE69710697D1/de
Application granted granted Critical
Publication of DE69710697T2 publication Critical patent/DE69710697T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
DE69710697T 1996-12-23 1997-12-23 Ladungspumpe mit negativer Ausgangsspannung, insbesondere für Flash-EEPROM-Speicher Expired - Lifetime DE69710697T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT96RM000899A IT1290168B1 (it) 1996-12-23 1996-12-23 Pompa di carica a tensione negativa per memorie flash eeprom

Publications (2)

Publication Number Publication Date
DE69710697D1 true DE69710697D1 (de) 2002-04-04
DE69710697T2 DE69710697T2 (de) 2002-09-05

Family

ID=11404615

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69710697T Expired - Lifetime DE69710697T2 (de) 1996-12-23 1997-12-23 Ladungspumpe mit negativer Ausgangsspannung, insbesondere für Flash-EEPROM-Speicher

Country Status (4)

Country Link
US (1) US5994949A (de)
EP (1) EP0851561B1 (de)
DE (1) DE69710697T2 (de)
IT (1) IT1290168B1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19935249C2 (de) * 1999-07-27 2001-09-27 Texas Instruments Deutschland Gleichspannungswandler
JP3910765B2 (ja) * 1999-09-08 2007-04-25 株式会社東芝 電圧発生回路及びこれを用いた電圧転送回路
US6967523B2 (en) 2000-11-21 2005-11-22 Mosaid Technologies Incorporated Cascaded charge pump power supply with different gate oxide thickness transistors
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US6658629B1 (en) * 2002-05-09 2003-12-02 Sun Microsystems, Inc. Technique for optimizing decoupling capacitance subject to leakage power constraints
FI114758B (fi) * 2002-10-25 2004-12-15 Nokia Oyj Jännitekertoja
US7007255B2 (en) 2003-02-27 2006-02-28 Micron Technology, Inc. Integrated circuit design using charge pump modeling
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US7505298B2 (en) * 2007-04-30 2009-03-17 Spansion Llc Transfer of non-associated information on flash memory devices
US8897073B2 (en) 2012-09-14 2014-11-25 Freescale Semiconductor, Inc. NVM with charge pump and method therefor
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
US11502619B1 (en) * 2021-07-30 2022-11-15 Texas Instruments Incorporated Hybrid multi-level inverter and charge pump

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
US5301097A (en) * 1992-06-10 1994-04-05 Intel Corporation Multi-staged charge-pump with staggered clock phases for providing high current capability
JPH0828965B2 (ja) * 1992-09-02 1996-03-21 日本電気株式会社 電圧変換回路
US5414614A (en) * 1994-06-06 1995-05-09 Motorola, Inc. Dynamically configurable switched capacitor power supply and method
IT1275104B (it) * 1994-12-28 1997-07-30 Texas Instruments Italia Spa "perfezionato moltiplicatore di tensione on-chip per memorie a semiconduttore"
KR0179852B1 (ko) * 1995-10-25 1999-04-15 문정환 차지 펌프 회로
DE69515669T2 (de) * 1995-10-31 2000-07-27 St Microelectronics Srl Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung
US5856918A (en) * 1995-11-08 1999-01-05 Sony Corporation Internal power supply circuit

Also Published As

Publication number Publication date
IT1290168B1 (it) 1998-10-19
ITRM960899A1 (it) 1998-06-23
EP0851561A2 (de) 1998-07-01
EP0851561A3 (de) 1999-06-30
ITRM960899A0 (it) 1996-12-23
DE69710697T2 (de) 2002-09-05
US5994949A (en) 1999-11-30
EP0851561B1 (de) 2002-02-27

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: TEXAS INSTRUMENTS INC., DALLAS, TEX., US

8364 No opposition during term of opposition
8380 Miscellaneous part iii

Free format text: DER ANMELDER IST ZU AENDERN IN: TEXAS INSTRUMENTS INC., DALLAS, TEX., US; DER 2. MITANMELDER CONSORZIO EAGLE, AVEZZANO, IT, IST ZU STREICHEN