DE69515669T2 - Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung - Google Patents

Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung

Info

Publication number
DE69515669T2
DE69515669T2 DE69515669T DE69515669T DE69515669T2 DE 69515669 T2 DE69515669 T2 DE 69515669T2 DE 69515669 T DE69515669 T DE 69515669T DE 69515669 T DE69515669 T DE 69515669T DE 69515669 T2 DE69515669 T2 DE 69515669T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
charge pump
electrically erasable
negative charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69515669T
Other languages
English (en)
Other versions
DE69515669D1 (de
Inventor
Caser Fabio Tassan
Marco Dallabora
Marco Defendi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69515669D1 publication Critical patent/DE69515669D1/de
Publication of DE69515669T2 publication Critical patent/DE69515669T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
DE69515669T 1995-10-31 1995-10-31 Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung Expired - Fee Related DE69515669T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830456A EP0772282B1 (de) 1995-10-31 1995-10-31 Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung

Publications (2)

Publication Number Publication Date
DE69515669D1 DE69515669D1 (de) 2000-04-20
DE69515669T2 true DE69515669T2 (de) 2000-07-27

Family

ID=8222041

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69515669T Expired - Fee Related DE69515669T2 (de) 1995-10-31 1995-10-31 Negative Ladungspumpenschaltung für elektrisch löschbare Halbleiterspeichervorrichtung

Country Status (3)

Country Link
US (1) US5754476A (de)
EP (1) EP0772282B1 (de)
DE (1) DE69515669T2 (de)

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KR100566466B1 (ko) * 1995-01-31 2006-03-31 가부시끼가이샤 히다치 세이사꾸쇼 반도체 메모리 장치
EP0843402B1 (de) * 1996-11-14 2002-02-27 STMicroelectronics S.r.l. BICMOS negative Leistungsladungspumpe
IT1290167B1 (it) * 1996-12-23 1998-10-19 Consorzio Eagle Pompa di carica in cmos ad alta corrente, in particolare per memorie flash eeprom
IT1290168B1 (it) * 1996-12-23 1998-10-19 Consorzio Eagle Pompa di carica a tensione negativa per memorie flash eeprom
US5994948A (en) * 1997-08-27 1999-11-30 Sgs-Thomson Microelectronics S.R.L. CMOS twin-tub negative voltage switching architecture
US6134144A (en) * 1997-09-19 2000-10-17 Integrated Memory Technologies, Inc. Flash memory array
JP4109340B2 (ja) * 1997-12-26 2008-07-02 株式会社ルネサステクノロジ 半導体集積回路装置
FR2773012B1 (fr) * 1997-12-24 2001-02-02 Sgs Thomson Microelectronics Dispositif a pompe de charges negatives
US6232826B1 (en) * 1998-01-12 2001-05-15 Intel Corporation Charge pump avoiding gain degradation due to the body effect
US6229732B1 (en) 1998-09-03 2001-05-08 Macronix International Co., Ltd. Regulated voltage supply circuit for inducing tunneling current in floating gate memory devices
US6055186A (en) * 1998-10-23 2000-04-25 Macronix International Co., Ltd. Regulated negative voltage supply circuit for floating gate memory devices
US6573780B2 (en) * 1999-02-02 2003-06-03 Macronix International Co., Ltd. Four-phase charge pump with lower peak current
US6037622A (en) * 1999-03-29 2000-03-14 Winbond Electronics Corporation Charge pump circuits for low supply voltages
JP2001078437A (ja) * 1999-06-30 2001-03-23 Toshiba Corp ポンプ回路
US6359947B1 (en) 1999-08-31 2002-03-19 Intel Corporation Split clock buffers for a negative charge pump
JP3910765B2 (ja) * 1999-09-08 2007-04-25 株式会社東芝 電圧発生回路及びこれを用いた電圧転送回路
US6297974B1 (en) 1999-09-27 2001-10-02 Intel Corporation Method and apparatus for reducing stress across capacitors used in integrated circuits
US6570435B1 (en) * 1999-11-18 2003-05-27 Texas Instruments Incorporated Integrated circuit with current limited charge pump and method
IT1319841B1 (it) * 2000-02-15 2003-11-03 St Microelectronics Srl Dispositivo survoltore bidirezionale ad elevata efficienza.
JP2002026254A (ja) * 2000-07-03 2002-01-25 Hitachi Ltd 半導体集積回路および不揮発性メモリ
US6288951B1 (en) * 2000-09-29 2001-09-11 Advanced Micro Devices Method and apparatus for continuously regulating a charge pump output voltage using a capacitor divider
KR100649828B1 (ko) * 2000-12-12 2006-11-24 주식회사 하이닉스반도체 음전압 발생 장치
US6496055B2 (en) 2000-12-29 2002-12-17 Intel Corporation Gate enhanced tri-channel positive charge pump
US6734797B2 (en) 2001-02-12 2004-05-11 Matrics, Inc. Identification tag utilizing charge pumps for voltage supply generation and data recovery
US6674317B1 (en) 2002-09-18 2004-01-06 Taiwan Semiconductor Manufacturing Company Output stage of a charge pump circuit providing relatively stable output voltage without voltage degradation
CA2499086A1 (en) * 2002-09-20 2004-04-01 Luca Figini Negative charge pump with bulk biasing
ITTO20020821A1 (it) * 2002-09-20 2004-03-21 Atmel Corp Pompa di carica negativa con polarizzazione di massa.
KR100510552B1 (ko) * 2003-10-27 2005-08-26 삼성전자주식회사 향상된 전하전달 효율을 갖는 전하펌프 회로
US6980045B1 (en) 2003-12-05 2005-12-27 Xilinx, Inc. Merged charge pump
US7030683B2 (en) * 2004-05-10 2006-04-18 Sandisk Corporation Four phase charge pump operable without phase overlap with improved efficiency
FR2878986B1 (fr) * 2004-12-08 2007-04-27 Atmel Corp Principe de regulation de puissance d'une sortie a haute tension dans des dispositifs de circuits integres
US7323926B2 (en) * 2004-12-21 2008-01-29 Macronix International Co., Ltd. Charge pump circuit
US7236061B2 (en) * 2005-05-03 2007-06-26 Macronix International Co., Ltd. Temperature compensated refresh clock circuit for memory circuits
JP4284345B2 (ja) * 2006-08-30 2009-06-24 株式会社 日立ディスプレイズ 電圧変換回路およびその電圧変換回路を備えた表示装置
US7414891B2 (en) * 2007-01-04 2008-08-19 Atmel Corporation Erase verify method for NAND-type flash memories
US7882405B2 (en) * 2007-02-16 2011-02-01 Atmel Corporation Embedded architecture with serial interface for testing flash memories
TWI328925B (en) * 2007-04-11 2010-08-11 Au Optronics Corp Negative voltage converter
US20100052772A1 (en) * 2008-08-29 2010-03-04 Caleb Yu-Sheng Cho Charge-Recycle Scheme for Charge Pumps
US20100181847A1 (en) * 2009-01-22 2010-07-22 Shen-Yu Huang Method for reducing supply voltage drop in digital circuit block and related layout architecture
US8692608B2 (en) * 2011-09-19 2014-04-08 United Microelectronics Corp. Charge pump system capable of stabilizing an output voltage
US8897073B2 (en) 2012-09-14 2014-11-25 Freescale Semiconductor, Inc. NVM with charge pump and method therefor
US8981535B2 (en) * 2013-04-30 2015-03-17 Robert Bosch Gmbh Charge pump capacitor assembly with silicon etching
US10644016B2 (en) * 2014-10-30 2020-05-05 Cypress Semiconductor Corporation Charge-trapping memory device
US10541606B1 (en) * 2018-07-16 2020-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Serial-parallel switch negative charge pump

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US5059815A (en) * 1990-04-05 1991-10-22 Advanced Micro Devices, Inc. High voltage charge pumps with series capacitors
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
JP2835215B2 (ja) * 1991-07-25 1998-12-14 株式会社東芝 不揮発性半導体記憶装置
DE4130191C2 (de) * 1991-09-30 1993-10-21 Samsung Electronics Co Ltd Konstantspannungsgenerator für eine Halbleitereinrichtung mit kaskadierter Auflade- bzw. Entladeschaltung
JP3170038B2 (ja) * 1992-05-19 2001-05-28 株式会社東芝 不揮発性半導体記憶装置
US5282170A (en) * 1992-10-22 1994-01-25 Advanced Micro Devices, Inc. Negative power supply
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential
US5335200A (en) * 1993-01-05 1994-08-02 Texas Instruments Incorporated High voltage negative charge pump with low voltage CMOS transistors
US5352936A (en) * 1993-06-07 1994-10-04 Intel Corporation High voltage tolerant voltage pump constructed for a low voltage CMOS process
US5532915A (en) * 1994-03-23 1996-07-02 Intel Corporation Method and apparatus for providing an ultra low power regulated negative charge pump

Also Published As

Publication number Publication date
US5754476A (en) 1998-05-19
EP0772282A1 (de) 1997-05-07
EP0772282B1 (de) 2000-03-15
DE69515669D1 (de) 2000-04-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee