DE69319991D1 - Spannungsversorgungen für Flash EEPROM Speicherzellen - Google Patents

Spannungsversorgungen für Flash EEPROM Speicherzellen

Info

Publication number
DE69319991D1
DE69319991D1 DE69319991T DE69319991T DE69319991D1 DE 69319991 D1 DE69319991 D1 DE 69319991D1 DE 69319991 T DE69319991 T DE 69319991T DE 69319991 T DE69319991 T DE 69319991T DE 69319991 D1 DE69319991 D1 DE 69319991D1
Authority
DE
Germany
Prior art keywords
memory cells
power supplies
eeprom memory
flash eeprom
flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69319991T
Other languages
English (en)
Other versions
DE69319991T2 (de
Inventor
Buskirk Michael A Van
Chen Johnny Chung-Lee
Chung K Chang
Lee E Cleveland
Antonio Montalvo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69319991D1 publication Critical patent/DE69319991D1/de
Publication of DE69319991T2 publication Critical patent/DE69319991T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Read Only Memory (AREA)
  • Dc-Dc Converters (AREA)
  • Logic Circuits (AREA)
DE69319991T 1992-10-22 1993-09-07 Spannungsversorgungen für Flash EEPROM Speicherzellen Expired - Fee Related DE69319991T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/964,684 US5291446A (en) 1992-10-22 1992-10-22 VPP power supply having a regulator circuit for controlling a regulated positive potential

Publications (2)

Publication Number Publication Date
DE69319991D1 true DE69319991D1 (de) 1998-09-03
DE69319991T2 DE69319991T2 (de) 1999-03-25

Family

ID=25508849

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69319991T Expired - Fee Related DE69319991T2 (de) 1992-10-22 1993-09-07 Spannungsversorgungen für Flash EEPROM Speicherzellen

Country Status (5)

Country Link
US (1) US5291446A (de)
EP (1) EP0594294B1 (de)
JP (1) JP3763590B2 (de)
KR (1) KR100317647B1 (de)
DE (1) DE69319991T2 (de)

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US6662262B1 (en) * 1999-10-19 2003-12-09 Advanced Micro Devices, Inc. OTP sector double protection for a simultaneous operation flash memory
US6111787A (en) * 1999-10-19 2000-08-29 Advanced Micro Devices, Inc. Address transistion detect timing architecture for a simultaneous operation flash memory device
US6331950B1 (en) 1999-10-19 2001-12-18 Fujitsu Limited Write protect input implementation for a simultaneous operation flash memory device
US6285585B1 (en) 1999-10-19 2001-09-04 Advaned Micro Devices, Inc. Output switching implementation for a flash memory device
US6185128B1 (en) 1999-10-19 2001-02-06 Advanced Micro Devices, Inc. Reference cell four-way switch for a simultaneous operation flash memory device
US6201753B1 (en) 1999-10-19 2001-03-13 Advanced Micro Devices, Inc. Latching CAM data in a flash memory device
US6259633B1 (en) 1999-10-19 2001-07-10 Advanced Micro Devices, Inc. Sense amplifier architecture for sliding banks for a simultaneous operation flash memory device
US6163478A (en) * 1999-10-19 2000-12-19 Advanced Micro Devices, Inc. Common flash interface implementation for a simultaneous operation flash memory device
US6359808B1 (en) 1999-10-19 2002-03-19 Advanced Micro Devices, Inc. Low voltage read cascode for 2V/3V and different bank combinations without metal options for a simultaneous operation flash memory device
US6118698A (en) * 1999-10-19 2000-09-12 Advanced Micro Devices, Inc. Output multiplexing implementation for a simultaneous operation flash memory device
US6550028B1 (en) 1999-10-19 2003-04-15 Advanced Micro Devices, Inc. Array VT mode implementation for a simultaneous operation flash memory device
US6571307B1 (en) 1999-10-19 2003-05-27 Advanced Micro Devices, Inc. Multiple purpose bus for a simultaneous operation flash memory device
US6327181B1 (en) 1999-10-19 2001-12-04 Advanced Micro Devices Inc. Reference cell bitline path architecture for a simultaneous operation flash memory device
KR100332114B1 (ko) * 1999-12-27 2002-04-10 박종섭 플래쉬 메모리 소자의 바이어스 레벨 생성회로
US6266281B1 (en) 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
US6285583B1 (en) 2000-02-17 2001-09-04 Advanced Micro Devices, Inc. High speed sensing to detect write protect state in a flash memory device
US6285627B1 (en) 2000-04-25 2001-09-04 Advanced Micro Devices, Inc. Address transition detector architecture for a high density flash memory device
US6327194B1 (en) 2000-04-25 2001-12-04 Advanced Micro Devices, Inc. Precise reference wordline loading compensation for a high density flash memory device
US6297993B1 (en) 2000-04-25 2001-10-02 Advanced Micro Devices, Inc. Acceleration voltage implementation for a high density flash memory device
US6353566B1 (en) 2000-04-25 2002-03-05 Advanced Micro Devices System and method for tracking sensing speed by an equalization pulse for a high density flash memory device
US6463516B1 (en) 2000-04-25 2002-10-08 Advanced Micro Devices, Inc. Variable sector size for a high density flash memory device
US6577535B2 (en) 2001-02-16 2003-06-10 Sandisk Corporation Method and system for distributed power generation in multi-chip memory systems
KR100439045B1 (ko) * 2001-06-29 2004-07-05 주식회사 하이닉스반도체 워드 라인 전압 클램핑 회로
US7057949B1 (en) * 2002-01-16 2006-06-06 Advanced Micro Devices, Inc. Method and apparatus for pre-charging negative pump MOS regulation capacitors
US6515903B1 (en) 2002-01-16 2003-02-04 Advanced Micro Devices, Inc. Negative pump regulator using MOS capacitor
US7114084B2 (en) 2002-03-06 2006-09-26 Micron Technology, Inc. Data controlled programmable power supply
US6891764B2 (en) * 2003-04-11 2005-05-10 Intel Corporation Apparatus and method to read a nonvolatile memory
WO2006001057A1 (ja) * 2004-06-25 2006-01-05 Spansion Llc 電圧制御回路および半導体装置
US7352626B1 (en) 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US7307878B1 (en) * 2005-08-29 2007-12-11 Spansion Llc Flash memory device having improved program rate
US7957204B1 (en) 2005-09-20 2011-06-07 Spansion Llc Flash memory programming power reduction
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
US7433228B2 (en) * 2005-09-20 2008-10-07 Spansion Llc Multi-bit flash memory device having improved program rate
US7295475B2 (en) * 2005-09-20 2007-11-13 Spansion Llc Flash memory programming using an indication bit to interpret state
US7279961B2 (en) * 2005-11-21 2007-10-09 Atmel Corporation Charge pump for intermediate voltage
WO2008047416A1 (fr) * 2006-10-18 2008-04-24 Spansion Llc Circuit de détection de tension
TWI331342B (en) * 2007-04-24 2010-10-01 Nanya Technology Corp Voltage booster and a memory structure applying the same
KR100909637B1 (ko) * 2008-03-18 2009-07-27 주식회사 하이닉스반도체 고전압 펌핑회로 및 이를 이용한 고전압 펌핑방법
ITMI20111201A1 (it) 2011-06-29 2012-12-30 St Microelectronics Srl Sistema di controllo per dispositivo di memoria
US9491151B2 (en) 2015-01-07 2016-11-08 Ememory Technology Inc. Memory apparatus, charge pump circuit and voltage pumping method thereof
KR102374841B1 (ko) 2015-05-28 2022-03-16 삼성전자주식회사 가변 전압 발생 회로 및 이를 포함하는 메모리 장치
EP3157011B1 (de) * 2015-10-13 2019-08-07 Nxp B.V. Ladungspumpenregulierung

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Also Published As

Publication number Publication date
DE69319991T2 (de) 1999-03-25
KR940010473A (ko) 1994-05-26
EP0594294A2 (de) 1994-04-27
EP0594294A3 (en) 1994-07-06
JP3763590B2 (ja) 2006-04-05
EP0594294B1 (de) 1998-07-29
US5291446A (en) 1994-03-01
KR100317647B1 (ko) 2002-03-21
JPH06259979A (ja) 1994-09-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee