IT1306963B1 - Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili - Google Patents

Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili

Info

Publication number
IT1306963B1
IT1306963B1 IT1999MI000080A ITMI990080A IT1306963B1 IT 1306963 B1 IT1306963 B1 IT 1306963B1 IT 1999MI000080 A IT1999MI000080 A IT 1999MI000080A IT MI990080 A ITMI990080 A IT MI990080A IT 1306963 B1 IT1306963 B1 IT 1306963B1
Authority
IT
Italy
Prior art keywords
capacitative
compensation circuit
volatile memories
reading voltage
line reading
Prior art date
Application number
IT1999MI000080A
Other languages
English (en)
Inventor
Rino Micheloni
Osama Khouri
Ilaria Motta
Andrea Sacco
Guido Torelli
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999MI000080A priority Critical patent/IT1306963B1/it
Priority to US09/491,475 priority patent/US6259632B1/en
Publication of ITMI990080A1 publication Critical patent/ITMI990080A1/it
Application granted granted Critical
Publication of IT1306963B1 publication Critical patent/IT1306963B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
IT1999MI000080A 1999-01-19 1999-01-19 Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili IT1306963B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999MI000080A IT1306963B1 (it) 1999-01-19 1999-01-19 Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili
US09/491,475 US6259632B1 (en) 1999-01-19 2000-01-19 Capacitive compensation circuit for the regulation of the word line reading voltage in non-volatile memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999MI000080A IT1306963B1 (it) 1999-01-19 1999-01-19 Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili

Publications (2)

Publication Number Publication Date
ITMI990080A1 ITMI990080A1 (it) 2000-07-19
IT1306963B1 true IT1306963B1 (it) 2001-10-11

Family

ID=11381521

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI000080A IT1306963B1 (it) 1999-01-19 1999-01-19 Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili

Country Status (2)

Country Link
US (1) US6259632B1 (it)
IT (1) IT1306963B1 (it)

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US6430093B1 (en) * 2001-05-24 2002-08-06 Ramtron International Corporation CMOS boosting circuit utilizing ferroelectric capacitors
US20030122173A1 (en) * 2001-12-28 2003-07-03 Rabadam Eleanor P. Package for a non-volatile memory device including integrated passive devices and method for making the same
KR100495854B1 (ko) * 2002-07-11 2005-06-16 주식회사 하이닉스반도체 부스팅 회로
US7031219B2 (en) * 2004-06-04 2006-04-18 Etron Technology, Inc. Internal power management scheme for a memory chip in deep power down mode
US7196946B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
US7196928B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US7443726B2 (en) * 2005-12-29 2008-10-28 Sandisk Corporation Systems for alternate row-based reading and writing for non-volatile memory
US7349260B2 (en) * 2005-12-29 2008-03-25 Sandisk Corporation Alternate row-based reading and writing for non-volatile memory
US7436733B2 (en) * 2006-03-03 2008-10-14 Sandisk Corporation System for performing read operation on non-volatile storage with compensation for coupling
US7499319B2 (en) * 2006-03-03 2009-03-03 Sandisk Corporation Read operation for non-volatile storage with compensation for coupling
US7440331B2 (en) * 2006-06-01 2008-10-21 Sandisk Corporation Verify operation for non-volatile storage using different voltages
US7457163B2 (en) * 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage
US7450421B2 (en) * 2006-06-02 2008-11-11 Sandisk Corporation Data pattern sensitivity compensation using different voltage
US7626865B2 (en) 2006-06-13 2009-12-01 Micron Technology, Inc. Charge pump operation in a non-volatile memory device
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
US7506113B2 (en) * 2006-07-20 2009-03-17 Sandisk Corporation Method for configuring compensation
US7400535B2 (en) * 2006-07-20 2008-07-15 Sandisk Corporation System that compensates for coupling during programming
US7885119B2 (en) * 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
US7495953B2 (en) * 2006-07-20 2009-02-24 Sandisk Corporation System for configuring compensation
US7443729B2 (en) * 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
US7522454B2 (en) * 2006-07-20 2009-04-21 Sandisk Corporation Compensating for coupling based on sensing a neighbor using coupling
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7599231B2 (en) * 2006-10-11 2009-10-06 Atmel Corporation Adaptive regulator for idle state in a charge pump circuit of a memory device
US7495992B2 (en) * 2006-12-22 2009-02-24 Sandisk Corporation System for reducing wordline recovery time
US7616505B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7616506B2 (en) * 2006-12-28 2009-11-10 Sandisk Corporation Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
US7440324B2 (en) * 2006-12-29 2008-10-21 Sandisk Corporation Apparatus with alternating read mode
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7518923B2 (en) * 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
US7616498B2 (en) * 2006-12-29 2009-11-10 Sandisk Corporation Non-volatile storage system with resistance sensing and compensation
US7495962B2 (en) * 2006-12-29 2009-02-24 Sandisk Corporation Alternating read mode
US7590002B2 (en) * 2006-12-29 2009-09-15 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
CN104091615B (zh) * 2014-07-23 2018-04-27 上海华虹宏力半导体制造有限公司 电荷泵系统及存储器
KR20220046065A (ko) * 2020-10-06 2022-04-14 삼성전자주식회사 레귤레이터 회로, 레귤레이터 회로를 포함하는 전자 장치, 및 레귤레이터 회로를 포함하는 프로세서

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US5222040A (en) * 1990-12-11 1993-06-22 Nexcom Technology, Inc. Single transistor eeprom memory cell
US5253202A (en) * 1991-02-05 1993-10-12 International Business Machines Corporation Word line driver circuit for dynamic random access memories
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential
US5511026A (en) * 1993-12-01 1996-04-23 Advanced Micro Devices, Inc. Boosted and regulated gate power supply with reference tracking for multi-density and low voltage supply memories
US5497119A (en) * 1994-06-01 1996-03-05 Intel Corporation High precision voltage regulation circuit for programming multilevel flash memory
US5994948A (en) * 1997-08-27 1999-11-30 Sgs-Thomson Microelectronics S.R.L. CMOS twin-tub negative voltage switching architecture
US6002630A (en) * 1997-11-21 1999-12-14 Macronix International Co., Ltd. On chip voltage generation for low power integrated circuits

Also Published As

Publication number Publication date
US6259632B1 (en) 2001-07-10
ITMI990080A1 (it) 2000-07-19

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