DE69604929T2 - Flash-eeprom-speicher mit getrennter referenzmatix - Google Patents

Flash-eeprom-speicher mit getrennter referenzmatix

Info

Publication number
DE69604929T2
DE69604929T2 DE69604929T DE69604929T DE69604929T2 DE 69604929 T2 DE69604929 T2 DE 69604929T2 DE 69604929 T DE69604929 T DE 69604929T DE 69604929 T DE69604929 T DE 69604929T DE 69604929 T2 DE69604929 T2 DE 69604929T2
Authority
DE
Germany
Prior art keywords
matix
eeprom memory
flash eeprom
separate reference
separate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69604929T
Other languages
English (en)
Other versions
DE69604929D1 (de
Inventor
Yuan Tang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69604929D1 publication Critical patent/DE69604929D1/de
Publication of DE69604929T2 publication Critical patent/DE69604929T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current
DE69604929T 1995-10-16 1996-08-30 Flash-eeprom-speicher mit getrennter referenzmatix Expired - Fee Related DE69604929T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/543,684 US5629892A (en) 1995-10-16 1995-10-16 Flash EEPROM memory with separate reference array
PCT/US1996/013930 WO1997015054A2 (en) 1995-10-16 1996-08-30 A flash eeprom memory with separate reference array

Publications (2)

Publication Number Publication Date
DE69604929D1 DE69604929D1 (de) 1999-12-02
DE69604929T2 true DE69604929T2 (de) 2000-06-21

Family

ID=24169131

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604929T Expired - Fee Related DE69604929T2 (de) 1995-10-16 1996-08-30 Flash-eeprom-speicher mit getrennter referenzmatix

Country Status (6)

Country Link
US (1) US5629892A (de)
EP (1) EP0856188B1 (de)
JP (1) JP3928022B2 (de)
KR (1) KR100445197B1 (de)
DE (1) DE69604929T2 (de)
WO (1) WO1997015054A2 (de)

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US7071060B1 (en) * 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
JP3920943B2 (ja) * 1996-05-10 2007-05-30 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
WO2004090908A1 (ja) * 1996-06-11 2004-10-21 Nobuyoshi Takeuchi ベリファイ機能を有する不揮発性記憶装置
JPH10261768A (ja) * 1997-03-18 1998-09-29 Fujitsu Ltd 半導体集積回路
US5859796A (en) * 1997-12-16 1999-01-12 Advanced Micro Devices, Inc. Programming of memory cells using connected floating gate analog reference cell
JP3346274B2 (ja) * 1998-04-27 2002-11-18 日本電気株式会社 不揮発性半導体記憶装置
US6038169A (en) * 1999-03-18 2000-03-14 Halo Lsi Design & Device Technology, Inc. Read reference scheme for flash memory
US6317362B1 (en) * 1999-07-13 2001-11-13 Sanyo Electric Co., Ltd. Semiconductor memory device
US6212103B1 (en) * 1999-07-28 2001-04-03 Xilinx, Inc. Method for operating flash memory
DE60037504T2 (de) 2000-05-31 2008-12-11 Stmicroelectronics S.R.L., Agrate Brianza Referenzzellenmatrixanordnung zum Datenlesen in einer nichtflüchtigen Speicheranordnung
EP1160794B1 (de) 2000-05-31 2008-07-23 STMicroelectronics S.r.l. Schaltungsanordnung zum Programmieren von Daten in Referenzzellen einer nichtflüchtigen Multibitspeicheranordnung
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
US6525966B1 (en) * 2000-12-06 2003-02-25 Advanced Micro Devices, Inc. Method and apparatus for adjusting on-chip current reference for EEPROM sensing
US6697283B2 (en) 2001-01-03 2004-02-24 Micron Technology, Inc. Temperature and voltage compensated reference current generator
US6490212B1 (en) * 2001-07-11 2002-12-03 Silicon Storage Technology, Inc. Bitline precharge matching
US7057935B2 (en) * 2001-08-30 2006-06-06 Micron Technology, Inc. Erase verify for non-volatile memory
US6654285B1 (en) * 2002-02-27 2003-11-25 Advanced Micro Devices, Inc. Method of matching core cell and reference cell source resistances
US7163860B1 (en) 2003-05-06 2007-01-16 Spansion Llc Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
US7038948B2 (en) * 2004-09-22 2006-05-02 Spansion Llc Read approach for multi-level virtual ground memory
US7068204B1 (en) 2004-09-28 2006-06-27 Spansion Llc System that facilitates reading multi-level data in non-volatile memory
US7142456B2 (en) * 2004-10-08 2006-11-28 Lexmark International Distributed programmed memory cells used as memory reference currents
US7447077B2 (en) * 2005-08-05 2008-11-04 Halo Lsi, Inc. Referencing scheme for trap memory
US8773934B2 (en) 2006-09-27 2014-07-08 Silicon Storage Technology, Inc. Power line compensation for flash memory sense amplifiers
US7787282B2 (en) * 2008-03-21 2010-08-31 Micron Technology, Inc. Sensing resistance variable memory
US8988940B2 (en) 2012-07-31 2015-03-24 International Business Machines Corporation Structure and method for narrowing voltage threshold distribution in non-volatile memories
US9437257B2 (en) * 2012-12-31 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Sensing circuit, memory device and data detecting method
US9496046B1 (en) 2015-08-14 2016-11-15 Integrated Silicon Solution, Inc. High speed sequential read method for flash memory
US11430516B2 (en) 2020-04-06 2022-08-30 Crossbar, Inc. Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chip
US11823739B2 (en) * 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits
US11727986B2 (en) * 2020-04-06 2023-08-15 Crossbar, Inc. Physically unclonable function (PUF) generation involving programming of marginal bits

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3482724D1 (de) * 1983-04-07 1990-08-23 Toshiba Kawasaki Kk Festwertspeicher.
DE3472502D1 (en) * 1983-09-16 1988-08-04 Fujitsu Ltd Plural-bit-per-cell read-only memory
US5142495A (en) * 1989-03-10 1992-08-25 Intel Corporation Variable load for margin mode
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
JP2853217B2 (ja) * 1989-11-21 1999-02-03 日本電気株式会社 半導体メモリ
JP3454520B2 (ja) * 1990-11-30 2003-10-06 インテル・コーポレーション フラッシュ記憶装置の書込み状態を確認する回路及びその方法
US5335198A (en) * 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
EP0714546B1 (de) * 1993-05-28 2000-02-02 Macronix International Co., Ltd. Lösch- und programmprüfungsschaltung für nichtflüchtige speicher
JP2835272B2 (ja) * 1993-12-21 1998-12-14 株式会社東芝 半導体記憶装置
ATE218003T1 (de) * 1995-02-10 2002-06-15 Micron Technology Inc Schneller leseverstärker für einen flash-speicher

Also Published As

Publication number Publication date
JPH11513833A (ja) 1999-11-24
JP3928022B2 (ja) 2007-06-13
WO1997015054A2 (en) 1997-04-24
EP0856188B1 (de) 1999-10-27
DE69604929D1 (de) 1999-12-02
KR19990064084A (ko) 1999-07-26
US5629892A (en) 1997-05-13
EP0856188A2 (de) 1998-08-05
KR100445197B1 (ko) 2004-11-16
WO1997015054A3 (en) 1997-07-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SU, US

8339 Ceased/non-payment of the annual fee