ATE218003T1 - Schneller leseverstärker für einen flash-speicher - Google Patents

Schneller leseverstärker für einen flash-speicher

Info

Publication number
ATE218003T1
ATE218003T1 AT96905438T AT96905438T ATE218003T1 AT E218003 T1 ATE218003 T1 AT E218003T1 AT 96905438 T AT96905438 T AT 96905438T AT 96905438 T AT96905438 T AT 96905438T AT E218003 T1 ATE218003 T1 AT E218003T1
Authority
AT
Austria
Prior art keywords
fast
flash memory
sensing amplifier
read amplifier
fast read
Prior art date
Application number
AT96905438T
Other languages
English (en)
Inventor
Michael S Briner
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE218003T1 publication Critical patent/ATE218003T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Landscapes

  • Read Only Memory (AREA)
  • Amplifiers (AREA)
  • Static Random-Access Memory (AREA)
AT96905438T 1995-02-10 1996-02-07 Schneller leseverstärker für einen flash-speicher ATE218003T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38701795A 1995-02-10 1995-02-10
PCT/US1996/001786 WO1996024936A1 (en) 1995-02-10 1996-02-07 Fast-sensing amplifier for flash memory

Publications (1)

Publication Number Publication Date
ATE218003T1 true ATE218003T1 (de) 2002-06-15

Family

ID=23528084

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96905438T ATE218003T1 (de) 1995-02-10 1996-02-07 Schneller leseverstärker für einen flash-speicher

Country Status (7)

Country Link
US (3) US5862077A (de)
EP (1) EP0808502B1 (de)
JP (1) JPH11503853A (de)
KR (1) KR100276536B1 (de)
AT (1) ATE218003T1 (de)
DE (1) DE69621323T2 (de)
WO (1) WO1996024936A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001167591A (ja) * 1999-12-08 2001-06-22 Matsushita Electric Ind Co Ltd 半導体記憶装置
US6108237A (en) * 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5629892A (en) * 1995-10-16 1997-05-13 Advanced Micro Devices, Inc. Flash EEPROM memory with separate reference array
EP0814484B1 (de) * 1996-06-18 2003-09-17 STMicroelectronics S.r.l. Nichtflüchtiger Speicher mit Einzelzellenreferenzsignalgeneratorschaltung zum Auslesen von Speicherzellen
FR2755286B1 (fr) * 1996-10-25 1999-01-22 Sgs Thomson Microelectronics Memoire a temps de lecture ameliore
JP3039458B2 (ja) * 1997-07-07 2000-05-08 日本電気株式会社 不揮発性半導体メモリ
IT1295910B1 (it) * 1997-10-31 1999-05-28 Sgs Thomson Microelectronics Circuito di lettura per memorie non volatili
JPH11213684A (ja) * 1998-01-28 1999-08-06 Toshiba Corp 不揮発性半導体メモリ
JP3237610B2 (ja) * 1998-05-19 2001-12-10 日本電気株式会社 不揮発性半導体記憶装置
JP3116921B2 (ja) * 1998-09-22 2000-12-11 日本電気株式会社 半導体記憶装置
US6078524A (en) * 1998-12-07 2000-06-20 Winbond Electronics Corporation High speed sensing circuit for a memory device
US6140877A (en) * 1998-12-11 2000-10-31 Micron Technology, Inc. Low power supply CMOS differential amplifier topology
US6865099B2 (en) * 1999-01-14 2005-03-08 Silicon Storage Technology, Inc. Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
KR100301817B1 (ko) * 1999-06-29 2001-11-01 김영환 레퍼런스 메모리셀의 초기화 회로 및 그를 이용한 초기화 방법
JP4249352B2 (ja) * 1999-11-09 2009-04-02 富士通株式会社 不揮発性半導体記憶装置
US6411549B1 (en) * 2000-06-21 2002-06-25 Atmel Corporation Reference cell for high speed sensing in non-volatile memories
US6304504B1 (en) 2000-08-30 2001-10-16 Micron Technology, Inc. Methods and systems for alternate bitline stress testing
US6441428B1 (en) 2001-03-19 2002-08-27 Micron Technology, Inc. One-sided floating-gate memory cell
US6983432B2 (en) 2001-05-04 2006-01-03 International Business Machines Corporation Circuit and method for modeling I/O
US6950341B2 (en) * 2001-06-07 2005-09-27 Kabushiki Kaisha Toshiba Semiconductor memory device having plural sense amplifiers
US6643178B2 (en) * 2001-07-31 2003-11-04 Fujitsu Limited System for source side sensing
US6768677B2 (en) * 2002-11-22 2004-07-27 Advanced Micro Devices, Inc. Cascode amplifier circuit for producing a fast, stable and accurate bit line voltage
US6775186B1 (en) * 2003-07-03 2004-08-10 Tower Semiconductor Ltd. Low voltage sensing circuit for non-volatile memory device
US7206234B2 (en) * 2005-06-21 2007-04-17 Micron Technology, Inc. Input buffer for low voltage operation
US7688635B2 (en) * 2006-07-14 2010-03-30 Micron Technology, Inc. Current sensing for Flash
US7542348B1 (en) 2007-12-19 2009-06-02 Juhan Kim NOR flash memory including bipolar segment read circuit
US8953384B2 (en) 2012-07-31 2015-02-10 Winbond Electronics Corporation Sense amplifier for flash memory
US20140269061A1 (en) * 2013-03-15 2014-09-18 Silicon Storage Technology, Inc. High Speed Sensing For Advanced Nanometer Flash Memory Device

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4250570B1 (en) * 1976-07-15 1996-01-02 Intel Corp Redundant memory circuit
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices
US4654831A (en) * 1985-04-11 1987-03-31 Advanced Micro Devices, Inc. High speed CMOS current sense amplifier
FR2611301B1 (fr) * 1987-02-24 1989-04-21 Thomson Semiconducteurs Memoire integree avec redondance de colonnes de donnees
US4807191A (en) * 1988-01-04 1989-02-21 Motorola, Inc. Redundancy for a block-architecture memory
US5191552A (en) * 1988-06-24 1993-03-02 Kabushiki Kaisha Toshiba Semiconductor memory device with address transition actuated dummy cell
JPH07105146B2 (ja) * 1988-07-29 1995-11-13 三菱電機株式会社 不揮発性記憶装置
US5293345A (en) * 1989-06-12 1994-03-08 Kabushiki Kaisha Toshiba Semiconductor memory device having a data detection circuit with two reference potentials
US5258958A (en) * 1989-06-12 1993-11-02 Kabushiki Kaisha Toshiba Semiconductor memory device
JPH0752592B2 (ja) * 1989-08-18 1995-06-05 株式会社東芝 半導体記憶装置
JPH03288399A (ja) * 1990-04-04 1991-12-18 Mitsubishi Electric Corp 半導体記憶装置
JPH0478097A (ja) * 1990-07-13 1992-03-12 Sony Corp メモリ装置
JPH06111596A (ja) * 1990-10-09 1994-04-22 Texas Instr Inc <Ti> メモリ
JP2586722B2 (ja) * 1990-10-11 1997-03-05 日本電気株式会社 半導体記憶装置
JP3179788B2 (ja) * 1991-01-17 2001-06-25 三菱電機株式会社 半導体記憶装置
JPH04321997A (ja) * 1991-04-19 1992-11-11 Nec Corp 半導体メモリ装置
JPH0574181A (ja) * 1991-09-10 1993-03-26 Nec Corp 半導体メモリ装置のデータ読み出し回路
JPH05166396A (ja) * 1991-12-12 1993-07-02 Mitsubishi Electric Corp 半導体メモリ装置
JP2564067B2 (ja) * 1992-01-09 1996-12-18 株式会社東芝 センス回路を有する読み出し出力回路
US5262994A (en) * 1992-01-31 1993-11-16 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with a multiplexer for selecting an output for a redundant memory access
US5268866A (en) * 1992-03-02 1993-12-07 Motorola, Inc. Memory with column redundancy and localized column redundancy control signals
WO1993018412A1 (en) * 1992-03-13 1993-09-16 Silicon Storage Technology, Inc. A sensing circuit for a floating gate memory device
FR2694119B1 (fr) * 1992-07-24 1994-08-26 Sgs Thomson Microelectronics Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture.
JPH06176585A (ja) * 1992-12-07 1994-06-24 Fujitsu Ltd 半導体記憶装置
KR970008188B1 (ko) * 1993-04-08 1997-05-21 가부시끼가이샤 히다찌세이사꾸쇼 플래시메모리의 제어방법 및 그것을 사용한 정보처리장치
JP2687852B2 (ja) * 1993-10-13 1997-12-08 日本電気株式会社 半導体メモリ装置

Also Published As

Publication number Publication date
US5862077A (en) 1999-01-19
US5835411A (en) 1998-11-10
KR19980702130A (ko) 1998-07-15
EP0808502B1 (de) 2002-05-22
JPH11503853A (ja) 1999-03-30
US5757697A (en) 1998-05-26
EP0808502A1 (de) 1997-11-26
DE69621323T2 (de) 2002-09-05
WO1996024936A1 (en) 1996-08-15
KR100276536B1 (ko) 2001-01-15
DE69621323D1 (de) 2002-06-27

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Legal Events

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