JPS645072A - Nonvolatile semiconductor memory device - Google Patents
Nonvolatile semiconductor memory deviceInfo
- Publication number
- JPS645072A JPS645072A JP16162587A JP16162587A JPS645072A JP S645072 A JPS645072 A JP S645072A JP 16162587 A JP16162587 A JP 16162587A JP 16162587 A JP16162587 A JP 16162587A JP S645072 A JPS645072 A JP S645072A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- cell
- level
- gate
- signals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
PURPOSE:To reduce the size of a memory cell by a method wherein one terminal of a selection transistor is connected to a row-line and the gate of the selection transistor is connected to a column-line and the other terminal of the selection transistor is connected to the series circuit of a plurality of cell transistors whose control gates are connected to the respective column-lines. CONSTITUTION:The output of a data input circuit 25 is supplied to the gate of an N-channel MOS transistor 26. One terminal of the transistor (hereinafter referred to as 'Tr') 26 is connected to a high voltage source Vp and the other terminal of Tr 26 is grounded through the series circuit of a selection Tr ST and cell Tr's CT1-CT4. If, after signals X1 and W1-W4 are at the high voltage level and electrons are injected into the floating gates of Tr's CT1-CT4, the signals W1-W4 are successively set to the zero level and a data D is at the 1 level at that time, Tr 26 is turned on and electrons are emitted from the floating gate of the corresponding cell Tr. When the data is read, the signals R and X1 are set at the 1 level and the control gate of the cell Tr to be read is set at the zero level and the potential of a node N2 is detected.
Priority Applications (27)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16162587A JP2664682B2 (en) | 1987-06-29 | 1987-06-29 | Nonvolatile semiconductor storage device |
US07/212,649 US5008856A (en) | 1987-06-29 | 1988-06-28 | Electrically programmable nonvolatile semiconductor memory device with NAND cell structure |
EP88110377A EP0297540B1 (en) | 1987-06-29 | 1988-06-29 | Memory cell of nonvolatile semiconductor memory device |
DE3855736T DE3855736T2 (en) | 1987-06-29 | 1988-06-29 | Non-volatile semiconductor memory device |
DE3855735T DE3855735T2 (en) | 1987-06-29 | 1988-06-29 | Non-volatile semiconductor memory device |
EP93102408A EP0551926B1 (en) | 1987-06-29 | 1988-06-29 | Nonvolatile semiconductor memory device |
DE3851479T DE3851479T2 (en) | 1987-06-29 | 1988-06-29 | Memory cell of a non-volatile semiconductor memory device. |
EP93102423A EP0545904B1 (en) | 1987-06-29 | 1988-06-29 | Nonvolatile semiconductor memory device |
KR1019880007892A KR910005973B1 (en) | 1987-06-29 | 1988-06-29 | Non-volatilization semiconductor memory device |
US07/685,650 US5148394A (en) | 1987-06-29 | 1991-04-16 | Electrically programmable nonvolatile semiconductor memory device with nand cell structure |
US07/913,451 US5270969A (en) | 1987-06-29 | 1992-07-15 | Electrically programmable nonvolatile semiconductor memory device with nand cell structure |
US08/288,219 US5448517A (en) | 1987-06-29 | 1994-08-09 | Electrically programmable nonvolatile semiconductor memory device with NAND cell structure |
US08/433,071 US5596525A (en) | 1987-06-29 | 1995-05-03 | Memory cell of nonvolatile semiconductor memory device |
US08/433,072 US5517449A (en) | 1987-06-29 | 1995-05-03 | Memory cell of nonvolatile semiconductor memory device |
US08/731,914 US5745413A (en) | 1987-06-29 | 1996-10-22 | Electrically programmable nonvolatile semiconductor memory device with NAND cell structure |
US08/848,226 US5877981A (en) | 1987-06-29 | 1997-04-29 | Nonvolatile semiconductor memory device having a matrix of memory cells |
US08/848,227 US5877982A (en) | 1987-06-29 | 1997-04-29 | Semiconductor memory device including circuitry for selecting a block in both read and write modes |
US08/901,660 US6058051A (en) | 1987-06-29 | 1997-07-28 | Memory cell of non-volatile semiconductor memory device |
US09/261,458 US6269021B1 (en) | 1987-06-29 | 1999-02-26 | Memory cell of nonvolatile semiconductor memory device |
US09/276,802 US6011747A (en) | 1987-06-29 | 1999-03-26 | Memory cell of non-volatile semiconductor memory device |
US09/305,479 US6072748A (en) | 1987-06-29 | 1999-05-06 | Memory cell of nonvolatile semiconductor memory device |
US09/306,426 US6021073A (en) | 1987-06-29 | 1999-05-06 | Memory cell of non-volatile semiconductor memory device |
US09/306,424 US6061271A (en) | 1987-06-29 | 1999-05-06 | Memory cell of nonvolatile semiconductor memory device |
US09/306,425 US6034899A (en) | 1987-06-29 | 1999-05-06 | Memory cell of nonvolatile semiconductor memory device |
US09/550,791 US6178116B1 (en) | 1987-06-29 | 2000-04-17 | Memory cell of non-volatile semiconductor memory device |
US09/699,632 US6549462B1 (en) | 1987-06-29 | 2000-10-31 | Memory cell of nonvolatile semiconductor memory device |
US10/052,742 US6545913B2 (en) | 1987-06-29 | 2002-01-23 | Memory cell of nonvolatile semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16162587A JP2664682B2 (en) | 1987-06-29 | 1987-06-29 | Nonvolatile semiconductor storage device |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25435493A Division JP2667626B2 (en) | 1993-10-12 | 1993-10-12 | Nonvolatile semiconductor memory device |
JP25435593A Division JP2573464B2 (en) | 1993-10-12 | 1993-10-12 | Nonvolatile semiconductor memory device |
JP08727297A Division JP3499706B2 (en) | 1997-03-24 | 1997-03-24 | Nonvolatile semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS645072A true JPS645072A (en) | 1989-01-10 |
JP2664682B2 JP2664682B2 (en) | 1997-10-15 |
Family
ID=15738739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16162587A Expired - Lifetime JP2664682B2 (en) | 1987-06-29 | 1987-06-29 | Nonvolatile semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2664682B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6545913B2 (en) | 1987-06-29 | 2003-04-08 | Kabushiki Kaisha Toshiba | Memory cell of nonvolatile semiconductor memory device |
US6549462B1 (en) | 1987-06-29 | 2003-04-15 | Kabushiki Kaisha Toshiba | Memory cell of nonvolatile semiconductor memory device |
US6654282B2 (en) | 2001-07-23 | 2003-11-25 | Seiko Epson Corporation | Nonvolatile semiconductor memory device |
US6744106B2 (en) | 2001-07-23 | 2004-06-01 | Seiko Epson Corporation | Non-volatile semiconductor memory device |
US6822926B2 (en) | 2001-07-23 | 2004-11-23 | Seiko Epson Corporation | Non-volatile semiconductor memory device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5771587A (en) * | 1980-10-22 | 1982-05-04 | Toshiba Corp | Semiconductor storing device |
-
1987
- 1987-06-29 JP JP16162587A patent/JP2664682B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5771587A (en) * | 1980-10-22 | 1982-05-04 | Toshiba Corp | Semiconductor storing device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6545913B2 (en) | 1987-06-29 | 2003-04-08 | Kabushiki Kaisha Toshiba | Memory cell of nonvolatile semiconductor memory device |
US6549462B1 (en) | 1987-06-29 | 2003-04-15 | Kabushiki Kaisha Toshiba | Memory cell of nonvolatile semiconductor memory device |
US6654282B2 (en) | 2001-07-23 | 2003-11-25 | Seiko Epson Corporation | Nonvolatile semiconductor memory device |
US6744106B2 (en) | 2001-07-23 | 2004-06-01 | Seiko Epson Corporation | Non-volatile semiconductor memory device |
US6822926B2 (en) | 2001-07-23 | 2004-11-23 | Seiko Epson Corporation | Non-volatile semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
JP2664682B2 (en) | 1997-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
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