JPS645072A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS645072A
JPS645072A JP16162587A JP16162587A JPS645072A JP S645072 A JPS645072 A JP S645072A JP 16162587 A JP16162587 A JP 16162587A JP 16162587 A JP16162587 A JP 16162587A JP S645072 A JPS645072 A JP S645072A
Authority
JP
Japan
Prior art keywords
terminal
cell
level
gate
signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16162587A
Other languages
Japanese (ja)
Other versions
JP2664682B2 (en
Inventor
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16162587A priority Critical patent/JP2664682B2/en
Priority to US07/212,649 priority patent/US5008856A/en
Priority to DE3851479T priority patent/DE3851479T2/en
Priority to EP88110377A priority patent/EP0297540B1/en
Priority to DE3855736T priority patent/DE3855736T2/en
Priority to DE3855735T priority patent/DE3855735T2/en
Priority to EP93102408A priority patent/EP0551926B1/en
Priority to EP93102423A priority patent/EP0545904B1/en
Priority to KR1019880007892A priority patent/KR910005973B1/en
Publication of JPS645072A publication Critical patent/JPS645072A/en
Priority to US07/685,650 priority patent/US5148394A/en
Priority to US07/913,451 priority patent/US5270969A/en
Priority to US08/288,219 priority patent/US5448517A/en
Priority to US08/433,071 priority patent/US5596525A/en
Priority to US08/433,072 priority patent/US5517449A/en
Priority to US08/731,914 priority patent/US5745413A/en
Priority to US08/848,227 priority patent/US5877982A/en
Priority to US08/848,226 priority patent/US5877981A/en
Priority to US08/901,660 priority patent/US6058051A/en
Application granted granted Critical
Publication of JP2664682B2 publication Critical patent/JP2664682B2/en
Priority to US09/261,458 priority patent/US6269021B1/en
Priority to US09/276,802 priority patent/US6011747A/en
Priority to US09/306,424 priority patent/US6061271A/en
Priority to US09/306,425 priority patent/US6034899A/en
Priority to US09/306,426 priority patent/US6021073A/en
Priority to US09/305,479 priority patent/US6072748A/en
Priority to US09/550,791 priority patent/US6178116B1/en
Priority to US09/699,632 priority patent/US6549462B1/en
Priority to US10/052,742 priority patent/US6545913B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To reduce the size of a memory cell by a method wherein one terminal of a selection transistor is connected to a row-line and the gate of the selection transistor is connected to a column-line and the other terminal of the selection transistor is connected to the series circuit of a plurality of cell transistors whose control gates are connected to the respective column-lines. CONSTITUTION:The output of a data input circuit 25 is supplied to the gate of an N-channel MOS transistor 26. One terminal of the transistor (hereinafter referred to as 'Tr') 26 is connected to a high voltage source Vp and the other terminal of Tr 26 is grounded through the series circuit of a selection Tr ST and cell Tr's CT1-CT4. If, after signals X1 and W1-W4 are at the high voltage level and electrons are injected into the floating gates of Tr's CT1-CT4, the signals W1-W4 are successively set to the zero level and a data D is at the 1 level at that time, Tr 26 is turned on and electrons are emitted from the floating gate of the corresponding cell Tr. When the data is read, the signals R and X1 are set at the 1 level and the control gate of the cell Tr to be read is set at the zero level and the potential of a node N2 is detected.
JP16162587A 1987-06-29 1987-06-29 Nonvolatile semiconductor storage device Expired - Lifetime JP2664682B2 (en)

Priority Applications (27)

Application Number Priority Date Filing Date Title
JP16162587A JP2664682B2 (en) 1987-06-29 1987-06-29 Nonvolatile semiconductor storage device
US07/212,649 US5008856A (en) 1987-06-29 1988-06-28 Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
EP88110377A EP0297540B1 (en) 1987-06-29 1988-06-29 Memory cell of nonvolatile semiconductor memory device
DE3855736T DE3855736T2 (en) 1987-06-29 1988-06-29 Non-volatile semiconductor memory device
DE3855735T DE3855735T2 (en) 1987-06-29 1988-06-29 Non-volatile semiconductor memory device
EP93102408A EP0551926B1 (en) 1987-06-29 1988-06-29 Nonvolatile semiconductor memory device
DE3851479T DE3851479T2 (en) 1987-06-29 1988-06-29 Memory cell of a non-volatile semiconductor memory device.
EP93102423A EP0545904B1 (en) 1987-06-29 1988-06-29 Nonvolatile semiconductor memory device
KR1019880007892A KR910005973B1 (en) 1987-06-29 1988-06-29 Non-volatilization semiconductor memory device
US07/685,650 US5148394A (en) 1987-06-29 1991-04-16 Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US07/913,451 US5270969A (en) 1987-06-29 1992-07-15 Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US08/288,219 US5448517A (en) 1987-06-29 1994-08-09 Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US08/433,071 US5596525A (en) 1987-06-29 1995-05-03 Memory cell of nonvolatile semiconductor memory device
US08/433,072 US5517449A (en) 1987-06-29 1995-05-03 Memory cell of nonvolatile semiconductor memory device
US08/731,914 US5745413A (en) 1987-06-29 1996-10-22 Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US08/848,226 US5877981A (en) 1987-06-29 1997-04-29 Nonvolatile semiconductor memory device having a matrix of memory cells
US08/848,227 US5877982A (en) 1987-06-29 1997-04-29 Semiconductor memory device including circuitry for selecting a block in both read and write modes
US08/901,660 US6058051A (en) 1987-06-29 1997-07-28 Memory cell of non-volatile semiconductor memory device
US09/261,458 US6269021B1 (en) 1987-06-29 1999-02-26 Memory cell of nonvolatile semiconductor memory device
US09/276,802 US6011747A (en) 1987-06-29 1999-03-26 Memory cell of non-volatile semiconductor memory device
US09/305,479 US6072748A (en) 1987-06-29 1999-05-06 Memory cell of nonvolatile semiconductor memory device
US09/306,426 US6021073A (en) 1987-06-29 1999-05-06 Memory cell of non-volatile semiconductor memory device
US09/306,424 US6061271A (en) 1987-06-29 1999-05-06 Memory cell of nonvolatile semiconductor memory device
US09/306,425 US6034899A (en) 1987-06-29 1999-05-06 Memory cell of nonvolatile semiconductor memory device
US09/550,791 US6178116B1 (en) 1987-06-29 2000-04-17 Memory cell of non-volatile semiconductor memory device
US09/699,632 US6549462B1 (en) 1987-06-29 2000-10-31 Memory cell of nonvolatile semiconductor memory device
US10/052,742 US6545913B2 (en) 1987-06-29 2002-01-23 Memory cell of nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16162587A JP2664682B2 (en) 1987-06-29 1987-06-29 Nonvolatile semiconductor storage device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP25435493A Division JP2667626B2 (en) 1993-10-12 1993-10-12 Nonvolatile semiconductor memory device
JP25435593A Division JP2573464B2 (en) 1993-10-12 1993-10-12 Nonvolatile semiconductor memory device
JP08727297A Division JP3499706B2 (en) 1997-03-24 1997-03-24 Nonvolatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS645072A true JPS645072A (en) 1989-01-10
JP2664682B2 JP2664682B2 (en) 1997-10-15

Family

ID=15738739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16162587A Expired - Lifetime JP2664682B2 (en) 1987-06-29 1987-06-29 Nonvolatile semiconductor storage device

Country Status (1)

Country Link
JP (1) JP2664682B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545913B2 (en) 1987-06-29 2003-04-08 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6549462B1 (en) 1987-06-29 2003-04-15 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6654282B2 (en) 2001-07-23 2003-11-25 Seiko Epson Corporation Nonvolatile semiconductor memory device
US6744106B2 (en) 2001-07-23 2004-06-01 Seiko Epson Corporation Non-volatile semiconductor memory device
US6822926B2 (en) 2001-07-23 2004-11-23 Seiko Epson Corporation Non-volatile semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771587A (en) * 1980-10-22 1982-05-04 Toshiba Corp Semiconductor storing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771587A (en) * 1980-10-22 1982-05-04 Toshiba Corp Semiconductor storing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545913B2 (en) 1987-06-29 2003-04-08 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6549462B1 (en) 1987-06-29 2003-04-15 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6654282B2 (en) 2001-07-23 2003-11-25 Seiko Epson Corporation Nonvolatile semiconductor memory device
US6744106B2 (en) 2001-07-23 2004-06-01 Seiko Epson Corporation Non-volatile semiconductor memory device
US6822926B2 (en) 2001-07-23 2004-11-23 Seiko Epson Corporation Non-volatile semiconductor memory device

Also Published As

Publication number Publication date
JP2664682B2 (en) 1997-10-15

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