DE69429264T2 - Byte-löschbares EEPROM, das mit einem mit einer einzigen Stromversorgung versehenen Flash-EPROM-System kompatibel ist - Google Patents

Byte-löschbares EEPROM, das mit einem mit einer einzigen Stromversorgung versehenen Flash-EPROM-System kompatibel ist

Info

Publication number
DE69429264T2
DE69429264T2 DE69429264T DE69429264T DE69429264T2 DE 69429264 T2 DE69429264 T2 DE 69429264T2 DE 69429264 T DE69429264 T DE 69429264T DE 69429264 T DE69429264 T DE 69429264T DE 69429264 T2 DE69429264 T2 DE 69429264T2
Authority
DE
Germany
Prior art keywords
byte
compatible
flash eprom
erasable eeprom
supply flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69429264T
Other languages
English (en)
Other versions
DE69429264D1 (de
Inventor
Paolo Cappelletti
Giulio Casagrande
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69429264D1 publication Critical patent/DE69429264D1/de
Publication of DE69429264T2 publication Critical patent/DE69429264T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
DE69429264T 1994-09-27 1994-09-27 Byte-löschbares EEPROM, das mit einem mit einer einzigen Stromversorgung versehenen Flash-EPROM-System kompatibel ist Expired - Fee Related DE69429264T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830459A EP0704851B1 (de) 1994-09-27 1994-09-27 Byte-löschbares EEPROM, das mit einem mit einer einzigen Stromversorgung versehenen Flash-EPROM-System kompatibel ist

Publications (2)

Publication Number Publication Date
DE69429264D1 DE69429264D1 (de) 2002-01-10
DE69429264T2 true DE69429264T2 (de) 2002-06-13

Family

ID=8218540

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69429264T Expired - Fee Related DE69429264T2 (de) 1994-09-27 1994-09-27 Byte-löschbares EEPROM, das mit einem mit einer einzigen Stromversorgung versehenen Flash-EPROM-System kompatibel ist

Country Status (4)

Country Link
US (1) US5612913A (de)
EP (1) EP0704851B1 (de)
JP (1) JPH08236731A (de)
DE (1) DE69429264T2 (de)

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KR0172532B1 (ko) * 1995-10-18 1999-03-30 김주용 플래쉬 메모리 장치
EP0793238A1 (de) * 1996-02-29 1997-09-03 STMicroelectronics S.r.l. Elektrisch programmierbare nichtflüchtige Speicherzelle für eine verringerte Anzahl von Programmierzyklen
DE69630107D1 (de) * 1996-04-15 2003-10-30 St Microelectronics Srl Mit einem EEPROM integrierter FLASH-EPROM
US5917757A (en) * 1996-08-01 1999-06-29 Aplus Flash Technology, Inc. Flash memory with high speed erasing structure using thin oxide semiconductor devices
JP2977023B2 (ja) * 1996-09-30 1999-11-10 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
US5818758A (en) * 1996-12-31 1998-10-06 Intel Corporation Zero voltage drop negative switch for dual well processes
US5923585A (en) * 1997-01-10 1999-07-13 Invox Technology Source biasing in non-volatile memory having row-based sectors
FR2758645B1 (fr) * 1997-01-22 2001-12-14 Sgs Thomson Microelectronics Dispositif et procede de programmation d'une memoire
US5761126A (en) * 1997-02-07 1998-06-02 National Semiconductor Corporation Single-poly EPROM cell that utilizes a reduced programming voltage to program the cell
US5889303A (en) * 1997-04-07 1999-03-30 Motorola, Inc. Split-Control gate electrically erasable programmable read only memory (EEPROM) cell
KR100744103B1 (ko) * 1997-12-30 2007-12-20 주식회사 하이닉스반도체 플래쉬메모리장치의로우디코더
JPH11214640A (ja) * 1998-01-28 1999-08-06 Hitachi Ltd 半導体記憶素子、半導体記憶装置とその制御方法
DE59913841D1 (de) * 1998-02-12 2006-10-26 Infineon Technologies Ag EEPROM und Verfahren zur Ansteuerung eines EEPROM
US6606267B2 (en) * 1998-06-23 2003-08-12 Sandisk Corporation High data rate write process for non-volatile flash memories
US6509606B1 (en) 1998-04-01 2003-01-21 National Semiconductor Corporation Single poly EPROM cell having smaller size and improved data retention compatible with advanced CMOS process
US5852577A (en) * 1998-05-05 1998-12-22 Silicon Storage Technology, Inc. Electrically erasable and programmable read-only memory having a small unit for program and erase
EP0962982A1 (de) * 1998-06-03 1999-12-08 STMicroelectronics S.r.l. Schaltungsstruktur für Byte-Löschbare EEPROMs
US6108236A (en) * 1998-07-17 2000-08-22 Advanced Technology Materials, Inc. Smart card comprising integrated circuitry including EPROM and error check and correction system
US6141255A (en) * 1999-09-02 2000-10-31 Advanced Micro Devices, Inc. 1 transistor cell for EEPROM application
US6501684B1 (en) * 1999-09-24 2002-12-31 Azalea Microelectronics Corporation Integrated circuit having an EEPROM and flash EPROM
US6222761B1 (en) * 2000-07-17 2001-04-24 Microchip Technology Incorporated Method for minimizing program disturb in a memory cell
TW529160B (en) * 2000-12-22 2003-04-21 Koninkl Philips Electronics Nv Semiconductor device comprising an electrically erasable programmable read only memory and a flash-erasable programmable read only memory, and method of manufacturing such a semiconductor device
US7177515B2 (en) * 2002-03-20 2007-02-13 The Regents Of The University Of Colorado Surface plasmon devices
US6850438B2 (en) * 2002-07-05 2005-02-01 Aplus Flash Technology, Inc. Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
US6917544B2 (en) * 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6798694B2 (en) * 2002-08-29 2004-09-28 Micron Technology, Inc. Method for reducing drain disturb in programming
WO2004023385A1 (ja) * 2002-08-29 2004-03-18 Renesas Technology Corp. 半導体処理装置及びｉｃカード
US6781881B2 (en) * 2002-12-19 2004-08-24 Taiwan Semiconductor Manufacturing Company Two-transistor flash cell for large endurance application
KR100532429B1 (ko) * 2003-04-18 2005-11-30 삼성전자주식회사 바이트 오퍼레이션 비휘발성 반도체 메모리 장치
KR100655434B1 (ko) * 2005-07-13 2006-12-08 삼성전자주식회사 메모리 장치 및 그 형성 방법
US7215573B2 (en) * 2005-08-25 2007-05-08 Silicon Storage Technology, Inc. Method and apparatus for reducing operation disturbance
US7619945B2 (en) * 2006-08-18 2009-11-17 Unity Semiconductor Corporation Memory power management
US8850102B2 (en) * 2007-08-23 2014-09-30 Nokia Corporation Flash memory with small data programming capability
JP4906122B2 (ja) * 2008-07-07 2012-03-28 ルネサスエレクトロニクス株式会社 半導体処理装置及びｉｃカード
US8385140B2 (en) * 2010-11-18 2013-02-26 Advanced Micro Devices, Inc. Memory elements having shared selection signals
CN108735266B (zh) * 2017-04-24 2021-06-22 物联记忆体科技股份有限公司 具有字元抹除与减少写入干扰的非易失性存储器装置
JP2019220242A (ja) * 2018-06-21 2019-12-26 セイコーエプソン株式会社 不揮発性記憶装置、マイクロコンピューター及び電子機器
US10910058B2 (en) 2018-08-17 2021-02-02 Microchip Technology Incorporated Shared source line memory architecture for flash cell byte-alterable high endurance data memory
TWI796148B (zh) * 2022-02-25 2023-03-11 華邦電子股份有限公司 快閃記憶體抹除方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5033023A (en) * 1988-04-08 1991-07-16 Catalyst Semiconductor, Inc. High density EEPROM cell and process for making the cell
US4949309A (en) * 1988-05-11 1990-08-14 Catalyst Semiconductor, Inc. EEPROM utilizing single transistor per cell capable of both byte erase and flash erase
US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
IT1239781B (it) * 1990-05-08 1993-11-15 Texas Instruments Italia Spa Circuito e metodo per commutare selettivamente tensioni negative in circuiti integrati cmos
US5270980A (en) * 1991-10-28 1993-12-14 Eastman Kodak Company Sector erasable flash EEPROM
US5339279A (en) * 1993-05-07 1994-08-16 Motorola, Inc. Block erasable flash EEPROM apparatus and method thereof
US5537350A (en) * 1993-09-10 1996-07-16 Intel Corporation Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array

Also Published As

Publication number Publication date
EP0704851A1 (de) 1996-04-03
DE69429264D1 (de) 2002-01-10
JPH08236731A (ja) 1996-09-13
EP0704851B1 (de) 2001-11-28
US5612913A (en) 1997-03-18

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee