CN107785221B - 排气设备和使用其的衬底处理设备 - Google Patents

排气设备和使用其的衬底处理设备 Download PDF

Info

Publication number
CN107785221B
CN107785221B CN201710738549.4A CN201710738549A CN107785221B CN 107785221 B CN107785221 B CN 107785221B CN 201710738549 A CN201710738549 A CN 201710738549A CN 107785221 B CN107785221 B CN 107785221B
Authority
CN
China
Prior art keywords
gas
exhaust
line
gas supply
dcs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710738549.4A
Other languages
English (en)
Other versions
CN107785221A (zh
Inventor
李学周
金大渊
金承煜
朴珍石
金材玹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM IP Holding BV
Original Assignee
ASM IP Holding BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM IP Holding BV filed Critical ASM IP Holding BV
Publication of CN107785221A publication Critical patent/CN107785221A/zh
Application granted granted Critical
Publication of CN107785221B publication Critical patent/CN107785221B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L41/00—Branching pipes; Joining pipes to walls
    • F16L41/02—Branch units, e.g. made in one piece, welded, riveted
    • F16L41/023—Y- pieces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L55/00—Devices or appurtenances for use in, or in connection with, pipes or pipe systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明提供一种使用气帘替代机械打开/关闭结构的排气设备，以通过选择性地排放气体来防止反应副产物的形成。排气设备包含：第一区域；连接到第一区域的第二区域；连接到第一区域的第三区域；以及连接到第二区域的第一气体管线，其中当将气体供应到第一气体管线时，第一区域不与第二区域连通，但与第三区域连通。

Description

排气设备和使用其的衬底处理设备
技术领域
一或多个实施例涉及一种排气设备、一种使用所述排气设备的衬底处理设备和一种使用所述排气设备的薄膜制造方法，且更确切地说，涉及一种被配置以选择性地排放气体的排气设备、一种使用所述排气设备的衬底处理设备和一种使用所述排气设备的薄膜制造方法。
背景技术
与半导体技术的发展一起，半导体衬底处理工艺(例如，沉积工艺或蚀刻工艺)已变得更错综复杂，且已将各种化学材料用作原料。因此，已开发具有各种结构的衬底处理设备来处理各种原料。
如果将具有高反应性的不同化学材料用作原料，那么装备的操作可受到反应副产物影响。举例来说，在反应器或排气管线中，反应副产物可保持呈固体形式。此剩余固体物质可降低排气系统的效率，且可造成例如阀或压力计的内部组件的故障。此外，在将有害化学品排放到空气前，此固体物质可保留在被配置以收集有害化学品的排气泵或洗涤器中。在此情况下，衬底处理设备的操作可能停止，或衬底处理设备的操作或生产率可能受到负面影响。
发明内容
一或多个实施例包含一种被配置以通过选择性地排放气体来防止反应副产物的形成的排气设备、一种使用所述排气设备的衬底处理设备和一种使用所述排气设备的薄膜制造方法。
额外方面将部分地在以下描述中阐述，并且部分地将从所述描述显而易见，或者可以通过实践所提出的实施例而获悉。
根据一或多个实施例，一种排气设备(或衬底处理设备)包含：第一区域；连接到所述第一区域的第二区域；连接到所述第一区域的第三区域；以及连接到所述第二区域的第一气体管线，其中当将气体供应到所述第一气体管线时，所述第一区域不与所述第二区域连通，但与所述第三区域连通。
所述排气设备(或所述衬底处理设备)可还包含连接到所述第三区域的第二气体管线，其中当将气体供应到所述第二气体管线时，所述第一区域可不与所述第三区域连通，但可与所述第二区域连通。
所述第一气体管线与所述第二气体管线可相互连接。
所述排气设备(或所述衬底处理设备)可还包含放置于所述第二区域中的第一气体供应环，其中所述第一气体供应环可包含连接到所述第一气体管线的至少一个孔洞。
所述排气设备(或所述衬底处理设备)可还包含连接到所述第二区域的旁路管线。
所述排气设备(或所述衬底处理设备)可还包含置于中所述第二区域中的第一气体供应环，其中所述第一气体供应环可包含：连接到所述第一气体管线的第一孔洞；以及连接到所述旁路管线的第二孔洞。
所述第一孔洞可位于所述第二孔洞与所述第一区域之间。当将气体供应到所述第一气体管线时，可将来自所述第一区域的气体排放到所述第三区域，且可将来自所述旁路管线的气体排放到所述第二区域。
通过所述第一气体管线供应的气体可不与通过所述旁路管线供应的气体反应。
所述第一气体管线可包含第一打开/关闭单元，所述第二气体管线可包含第二打开/关闭单元，且所述排气设备(或所述衬底处理设备)可还包含被配置以控制所述第一和第二打开/关闭单元的控制器。
所述排气设备(或所述衬底处理设备)可还包含连接到所述第一区域、所述第二区域和所述第三区域中的至少一个的气体分析单元，其中所述控制器可与所述气体分析单元通信且确定所述第一和第二打开/关闭单元的操作时机。
根据一或多个实施例，一种排气设备(或衬底处理设备)包含：上部板；主体；至少一个气体供应环；下部板；第一子排气管线；第二子排气管线；以及至少一个冲洗气体供应路径，其穿透所述主体且连接到所述气体供应环。
从主排气管线分叉的至少一个排气路径可形成于所述主体中，且所述排气路径可与所述第一子排气管线和所述第二子排气管线连接。
所述气体供应环可位于所述排气路径与所述第一子排气管线之间或所述排气路径与所述第二子排气管线之间。
所述排气设备(或所述衬底处理设备)可还包含至少一个旁路气体供应路径，其穿透所述主体且连接到所述气体供应环。
所述气体供应环可包含在其侧面中的至少一个气体孔洞，其中所述至少一个气体孔洞可包含：连接到所述冲洗气体供应路径的上部孔洞；和连接到所述旁路气体供应路径的下部孔洞，其中所述排气设备(或所述衬底处理设备)可还包含在所述上部孔洞与所述下部孔洞之间的密封措施。
通过所述冲洗气体供应路径和所述上部孔洞，排放到形成于所述主体中的所述排气路径的冲洗气体，可在所述排气路径中形成气帘。
通过所述冲洗气体供应路径和所述气体供应环的所述上部孔洞，流动到所述排气路径的气体可为惰性气体，且通过所述旁路气体供应路径和所述气体供应环的所述下部孔洞，流动到所述排气路径的气体可为二氯硅烷(DCS、SiH2Cl2)气体或NH3气体。
所述排气设备(或所述衬底处理设备)可还包含连接到所述冲洗气体供应路径的防回流装置。
根据一或多个实施例，一种衬底处理设备包含：气体供应单元；反应器；排气单元；以及排气泵单元，其中所述气体供应单元包含：至少一个气体管线，通过所述至少一个气体管线将气体从所述气体供应单元供应到所述反应器；旁路管线，其从所述气体管线分叉且连接到所述排气单元；以及冲洗气体管线，其从所述气体供应单元连接到所述排气单元。
所述排气单元可包含：主排气管线；上部板；主体；气体供应环；下部板；以及至少一个子排气管线，其中所述主排气管线可连接到所述反应器，且所述子排气管线可连接到所述排气泵单元。
所述主体可包含形成于所述主体中且从所述主排气管线分叉的至少一个排气路径，且所述排气路径可连接到所述子排气管线，其中所述气体供应环可位于所述排气路径与所述子排气管线之间。
所述衬底处理设备可还包含：至少一个冲洗气体供应路径，其穿透所述上部板和所述主体且连接到所述排气路径和所述气体供应环；以及至少一个旁路气体供应路径，其穿透所述主体且连接到排气路径和所述气体供应环，其中所述冲洗气体供应路径可连接到所述冲洗气体管线，且所述旁路气体供应路径可连接到所述旁路管线。
所述气体供应环可包含在所述主体的侧面的至少一个孔洞，其中所述至少一个孔洞可包含：上部孔洞，来自所述冲洗气体供应路径的冲洗气体穿过所述上部孔洞；以及下部孔洞，来自所述旁路气体供应路径的旁路气体穿过所述下部孔洞。
所述下部孔洞可位于所述上部孔洞与所述下部板之间。
根据一或多个实施例，一种薄膜制造方法包含：供应源气体的第一步骤；冲洗所述源气体的第二步骤；供应反应气体的第三步骤；以及供应等离子体(plasma)的第四步骤，其中依序供应所述源气体、所述反应气体和所述等离子体，且在供应所述源气体、所述反应气体和所述等离子体时将第一冲洗气体连续地供应到反应空间。
在冲洗所述源气体的所述第二步骤期间，可通过排气单元的第一路径排放所述源气体和所述第一冲洗气体，且可将第二冲洗气体供应到所述排气单元的第二路径。
在冲洗所述源气体的所述第二步骤期间，所述第二冲洗气体可在所述第二路径中形成气帘。
当将所述源气体和所述反应气体中的一个供应到反应器时，可使另一气体绕过到所述排气单元。
所述绕过的气体排放到的路径可与将从所述反应器排放的气体排放到的路径不同。
在供应所述源气体的所述第一步骤期间，可将所述源气体和所述第一冲洗气体供应到所述反应空间，且可将所述反应气体供应到所述排气单元的所述第二路径。
在冲洗源气体的所述第二步骤期间，可将所述第一冲洗气体供应到所述反应空间，可将所述源气体供应到所述排气单元的所述第一路径，且可将所述反应气体供应到所述排气单元的所述第二路径。
在供应所述源气体的所述第一步骤期间供应的所述第一冲洗气体的第一流动速率可低于在冲洗所述源气体的所述第二步骤期间供应的所述第二冲洗气体的第二流动速率。
在供应所述反应气体的所述第三步骤和供应所述等离子体的所述第四步骤期间，可将所述反应气体和所述第一冲洗气体供应到所述反应空间，且可将所述源气体供应到所述排气单元的所述第一路径。
在供应所述反应气体的所述第三步骤和供应所述等离子体的所述第四步骤期间，可将所述第二冲洗气体供应到所述排气单元的所述第一路径。
根据一或多个实施例，一种薄膜制造方法包含：将第一气体从第一区域排放到第二区域；以及将第二气体从所述第一区域排放到第三区域，其中在所述第一气体的所述排放期间，将第三气体供应到所述第三区域以形成包含所述第三区域中的所述第三气体的气帘，和在所述第二气体的所述排放期间，将所述第三气体供应到所述第二区域以形成包含在所述第二区域中的所述第三气体的气帘。
附图说明
从结合附图对实施例进行的以下描述，这些和/或其它方面将变得显而易见并且更加容易了解，在所述附图中：
图1和图2为说明根据实施例的排气设备的示意图。
图3为说明根据实施例的衬底处理设备的示意图。
图4和图5为说明根据另一实施例的包含排气设备的衬底处理设备的示意图。
图6为说明根据另一实施例的包含排气设备的衬底处理设备的示意图。
图7为说明根据另一实施例的排气设备的示意图。
图8到图13为说明根据另一实施例的排气设备的示意图。
图14为说明根据实施例的气体供应环的示意图。
图15到图17为说明图14中说明的气体供应环的修改的横截面图。
图18为说明根据实施例的薄膜制造方法的示意图。
图19为说明根据另一实施例的薄膜制造方法的示意图。
具体实施方式
现在将对实施例进行详细参考，所述实施例的实例在附图中说明，其中在全文中相似参考数字指代相似元件。在此方面，本实施例可具有不同形式并且不应被解释为限于本文中所阐述的描述。因此，这些实施例仅通过参看图在下文中描述以解释本描述的各方面。例如“中的至少一个”的表达当在一列元素之前时修饰整列元素，而不是修饰所述列表中的个别元素。
现将参看附图来描述实施例。
然而，本发明概念可以许多不同形式体现，且不应被解释为限于本文中阐述的实施例；相反地，提供此等实施例以对所属领域的一般技术人员给出本发明概念的清晰理解。即，提供所述实施例，使得本揭露内容将透彻且完整，并且所述实施例将向所属领域的一般技术人员充分传达本发明概念。
在以下描述中，术语仅用于解释具体实施例，而不限制本发明概念。单数形式的术语可包含复数形式，除非有相反的提及。“包括(comprise和/或comprising)”的意义指定形状、固定数目、步骤、工艺、部件、元件和/或其组合，但不排除其它形状、固定数目、步骤、工艺、部件、元件和/或其组合。如本文中所使用，术语“和/或”包含相关联的所列项目中的一或多个的任何和所有组合。
应理解，虽然本文中可使用术语“第一”、“第二”等来描述各种部件、区域和/或元件，但这些部件、区域和/或元件不应受这些术语限制。这些术语不用来表示特定次序、位置关系，或部件、区域或元件的等级，而是仅仅用来区分一个部件、区域或元件与另一部件、区域或元件。因此，在不脱离本发明概念的教示的情况下，以下论述的第一部件、区域或元件可被称为第二部件、区域或元件。
下文，将参看附图描述实施例。可根据例如制造方法和/或公差的各种因素来变化附图中说明的形状。即，实施例不限于附图中说明的特定形状。应考虑到例如制造工艺的形状改变的因素。
图1和图2为说明根据实施例的排气设备的示意图。
参看图1，排气设备可包含第一区域110、第二区域120、第三区域130、第一气体管线140和第二气体管线150。
第一区域110、第二区域120和第三区域130可相互连接且可在不同方向上延伸。举例来说，第一区域110可为排气路径的区域，且可连接到主排气管线。第二区域120和第三区域130可为排气路径的其它区域，且可分别连接到从主排气管线分叉的子排气管线。
第一气体管线140可连接到第二区域120，且可具有确定第一区域110和第二区域120是否相互连通的功能。本文中，术语或表达“连通”或“与……连通”可用以指示气体的流动交换的可能性。举例来说，当第一区域110与第二区域120连通时，气体可从第一区域110流动到第二区域120和从第二区域120流动到第一区域110。
第二气体管线150可连接到第三区域130，且可具有确定第一区域110与第二区域120是否相互连通的功能。举例来说，如果将气体供应到第一气体管线140，那么第一区域110可不与第二区域120连通，但可与第三区域130连通(参看图1)。此外，如果将气体供应到第二气体管线150，那么第一区域110可不与第三区域130连通，但可与第二区域120连通(参看图2)。
在排气设备中，可将许多种气体供应到第一区域110。可选择性地将此类气体排放到第二区域120或第三区域130。举例来说，当将气体供应到第一气体管线140时，由于第一区域110与第三区域130连通，因此可将第一区域110的气体(例如，第一气体)排放到第三区域130。然而，当将气体供应到第二气体管线150时，由于第一区域110与第二区域120连通，因此可将第一区域110的气体(例如，第二气体)排放到第二区域120。
当前实施例涉及包含多个排气管线的排气管线结构。在当前实施例中，气体管线用以个别地排放至少两种源气体。此气体管线将具有低反应性的气体(例如，惰性气体，例如，氩(Ar))供应到排气管线以在排气管线中形成气帘。接着，大体上关闭排气管线，且因此可选择性地排放特定气体。
参看图1，第一区域110与第三区域130连通，且因此第一气体由泵B从第一区域110排放到第三区域130。通过第一气体管线140供应到第二区域120的气体由泵A从第二区域120排放。换句话说，将具有与第一气体的低反应性的气体供应到第二区域120，且因此包含所述气体的气帘形成于第二区域120中。
参看图2，第一区域110与第二区域120连通，且因此第二气体由泵A从第一区域110排放到第二区域120。通过第二气体管线150供应到第三区域130的气体由泵B从第三区域130排放。换句话说，将具有与第二气体的低反应性的气体供应到第三区域130，且因此包含所述气体的气帘形成于第三区域130中。
如上所述，第一区域110可邻近主排气管线，且第二区域120和第三区域130可分别邻近第一子排气管线和第二子排气管线。因此，通过第一气体管线140和第二气体管线150供应的气体可分别在第一和第二子排气管线的入口中形成气帘，且因此选择性排放气体可为有可能的。在一些实施例中，可将通过第一气体管线140和/或第二气体管线150供应的气体的流动速率维持为大体上等于从反应器流出的气体的流动速率。
如上所述，当前实施例提供基于气体的打开/关闭结构，与机械打开/关闭结构相比，其实现快速切换。举例来说，在原子层沉积工艺中，可需要气体之间的快速切换。然而，如果在此原子层沉积工艺中使用机械打开/关闭结构(例如，挡板阀)，那么可能由于机械操作中的限制而难以根据所需的短气体交换间隔来控制原子层沉积工艺。此外，由于频繁的物理操作，机械打开/关闭结构有可能破坏或有故障。
然而，替代使用机械结构，所述实施例使用气帘来提供打开/关闭结构，由此保证高速操作。此外，在所述实施例的基于气体的打开/关闭结构中，例如机械磨损的问题可能不会发生。因此，基于气体的打开/关闭结构可具有无限使用寿命，且可改善具有基于气体的打开/关闭结构的排气设备的耐久性。在化学反应后剩余的材料可累积于此类机械打开/关闭结构上。然而，此剩余材料可不累积于实施例的基于气体的打开/关闭结构上，且因此关于此类剩余材料的问题可不出现。此外，基于气体的打开/关闭结构在排气管线中不需要额外结构，且因此可易于确保排气管线中用于维修/修理的空间。即，就维修/修理来说，可进行改善。
实施例可对例如将二氯硅烷(DCS：SiH2Cl2)和NH3用作原料的氮化硅原子层沉积工艺的原子层沉积工艺具有正面的技术效应(例如，允许迅速气体交换和防止由反应副产物造成的设备的低效操作)。这将在下文描述。
图3为说明根据实施例的衬底处理设备的示意图。可使用先前实施例的排气设备配置当前实施例的衬底处理设备。因此，与在先前实施例中提出的描述相同的描述将不在此处提出。
参看图3，衬底处理设备可包含气体供应单元210、反应器220、排气单元230、控制器240和气体分析单元250。衬底处理设备可还包含连接到排气单元230(参看图1和图2)的排气泵(未示出)。
气体供应单元210可通过至少一个反应气体管线260将至少两种源气体和/或第一冲洗气体供应到反应器220。气体供应单元210可连接到被配置以在垂直方向上将气体供应到衬底的莲蓬头。在另一实施例中，气体供应单元210可连接到被配置以在侧向方向上供应气体的侧向流动装置。在另一实施例中，气体供应单元210可连接到被配置以将气体供应到反应空间的任一装置。
第一气体管线140与第二气体管线150可相互连接，且气体供应单元210可通过冲洗气体管线265将第二冲洗气体供应到第一气体管线140和/或第二气体管线150。此外，衬底处理设备可还包含从反应气体管线260分叉且接合排气单元230的旁路管线(未示出)。因此，可通过旁路管线将源气体和/或第一冲洗气体直接从气体供应单元210供应到排气单元230(参看图3)。
排气单元230可选择性排放从反应器220接收的气体。举例来说，如上所述，排气单元230可包含连接到第一区域的主排气管线270、连接到第二区域的第一子排气管线280、连接到第三区域的第二子排气管线290、第一气体管线140和第二气体管线150。
第一气体管线140可包含第一打开/闭合单元310。此外，第二气体管线150可包含第二打开/关闭单元320。取决于第一打开/关闭单元310和/或第二打开/关闭单元320是打开还是关闭，可将冲洗气体从气体供应单元210供应到第一子排气管线280和/或第二子排气管线290。
控制器240可控制第一打开/关闭单元310和/或第二打开/关闭单元320。举例来说，控制器240可与分析单元250通信以确定第一打开/关闭单元310和/或第二打开/关闭单元320的操作时机。
分析单元250可分析气体的组成或性质(例如，气体的组分、温度、流动速率、压力或浓度)。分析单元250可连接到气体供应单元210、反应气体管线260、连接到第一区域的主排气管线270、连接到第二区域的第一子排气管线280和连接到第三区域的第二子排气管线290中的至少一个。
控制器240可与分析单元250通信以确定气体从气体供应单元210到达第一子排气管线280(或第二子排气管线290)的时间周期。接着，可基于确定的时间周期打开或关闭第一打开/关闭单元310或第二打开/关闭单元320。基于第一打开/关闭单元310和第二打开/关闭单元320的操作，可将第二冲洗气体供应到第一子排气管线280或第二子排气管线290以形成气帘。结果，可选择性地排放从气体供应单元210供应的源气体。
图4和图5为说明根据另一实施例的包含排气设备的衬底处理设备的示意图。当前实施例的排气设备和衬底处理设备可为先前实施例的排气设备和衬底处理设备的修改。因此，与在先前实施例中提出的描述相同的描述将不在此处提出。
参看图4和图5，衬底处理设备可包含第一排放部分144、第二排放部分146、反应室106和排气设备134。排气设备134可包含第一区域110、第二区域120、第三区域130、连接到第二区域120的第一气体管线140和连接到第三区域130的第二气体管线150。
衬底处理设备可为侧向流动型衬底处理设备，其被配置以在侧向方向上供应气体和通过排气设备134排放气体。举例来说，可通过第一排放部分144将第一气体(例如，沉积或清洁气体)供应到反应室106。在此情况下，可操作排气设备134使得在反应室106中流动的气体可通过第三区域130排放。
举例来说，排气设备134可将低反应性气体(和第一气体)供应到第一气体管线140。在此情况下，归因于低反应性气体，第一区域110不与第二区域120连通，但与第三区域130连通。因此，通过第一排放部分144供应的第一气体可仅通过第三区域130排放。
参看图5，可通过第二排放部分146将第二气体供应到反应室106。在此情况下，可操作排气设备134使得在反应室106中流动的气体可通过第二区域120排放。
举例来说，排气设备134可将低反应性气体(和第二气体)供应到第二气体管线150。在此情况下，归因于低反应性气体，第一区域110不与第三区域130连通，但与第二区域120连通。因此，通过第二排放部分146供应的第二气体可仅通过第二区域120排放。
图6为说明根据另一实施例的包含排气设备C的衬底处理设备的示意图。当前实施例的排气设备C和衬底处理设备可为先前实施例的排气设备和衬底处理设备的修改。因此，与在先前实施例中提出的描述相同的描述将不在此处提出。
参看图6，像在先前实施例中一样，衬底处理设备可包含气体供应单元、反应器1、排气设备C、第一泵3、第一洗涤器11、第二泵4和第二洗涤器12。衬底处理设备可被配置以在垂直于衬底的方向上使用气体喷射单元2将气体供应到衬底。
举例来说，图6中说明的衬底处理设备可为被配置以形成氮化硅膜的原子层沉积设备。在当前实施例中，将DCS(二氯硅烷；SiH2Cl2)用作硅源，且将氨(NH3)用作氮源。当前实施例的原子层沉积设备(衬底处理设备)可包含反应器1、气体喷射单元2、第一泵(DCS排气泵)3、第二泵(NH3排气泵)4、主排气管线5、DCS子排气管线6、NH3子排气管线7、DCS旁路管线8、NH3旁路管线9、冲洗氩管线10、第一洗涤器(DCS洗涤器)11和第二洗涤器(NH3洗涤器)12。此外，原子层沉积设备可还包含阀v1到v11以控制气体成直线流动。
反应器1可提供将氮化硅薄膜沉积在衬底上的空间(例如，闭合空间)。为此目的，可使用例如O形环的密封措施将反应器1与反应器1的外面隔离。一般来说，可将反应器1维持在等于或低于大气压力的压力下。可将衬底支撑或基座(未示出)放置于反应器1中，且闸门阀(未示出)可位于反应器1的侧面以穿过其引入和排出衬底。闸门阀可只在通过闸门阀引入或排出衬底时打开，且可在工艺期间维持在关闭状态中。
可通过气体喷射单元2将通过DCS管线19和NH3管线20供应的DCS和NH3和通过处理氩管线18供应的处理氩Ar1均匀地供应到硅衬底。举例来说，气体喷射单元2可为莲蓬头。在一些实施例中，气体喷射单元2可连接到射频(radio frequency；RF)等离子体产生器以执行等离子体原子层沉积工艺。在其它实施例中，气体喷射单元2可充当等离子体电极。
排气泵可包含DCS排气泵3和NH3排气泵4。在工艺中使用的源气体有毒、有腐蚀性且可燃，且因此在排放到外面空气前使用洗涤器收集。在实施例中，洗涤器连接到排气泵的后端，使得在工艺后通过泵排放的气体可由洗涤器过滤且可接着在被净化过的状态中排放到外面空气。即，如图6中所说明，DCS洗涤器11和NH3洗涤器12可分别连接到DCS排气泵3和NH3排气泵4。DCS排气泵3和DCS洗涤器11可处理DCS源气体，且NH3排气泵4和NH3洗涤器12可处理NH3气体。
在穿过反应器1后，源/反应气体可通过排气设备C排放。排气设备C可包含主排气管线5和两个子排气管线6和7。主排气管线5可在分叉点13分叉成两个子排气管线6和7。两个子排气管线6和7分别为DCS子排气管线和NH3子排气管线。
衬底处理设备可还包含旁路管线。举例来说，在当前实施例中被配置为原子层沉积设备的衬底处理设备可包含DCS旁路管线8和NH3旁路管线9。在此情况下，在原子层沉积工艺期间，可将DCS和NH3交替地供应到反应器1。当将DCS供应到反应器1时，可通过NH3旁路管线9将NH3排放到NH3排气泵4，且当将NH3供应到反应器1时，可通过DCS旁路管线8将DCS排放到DCS排气泵3。即，当以切换方式将源/反应气体交替地供应到反应器1与旁路管线8和9时，可维持连续流，且因此可不断地维持气体管线和反应器1的内部压力，由此确保工艺稳定性。
在图6中说明的实施例中，衬底处理设备可还包含冲洗氩管线10。冲洗氩管线10可连接到DCS子排气管线6和NH3子排气管线7，且因此可通过冲洗氩管线10将冲洗氩Ar2供应到DCS子排气管线6和NH3子排气管线7。
举例来说，冲洗氩管线10可在DCS旁路管线8与DCS子排气管线6之间的连接部分14的前端15处连接到DCS子排气管线6，且可在NH3旁路管线9与NH3子排气管线7之间的连接部分16的前端17处连接到NH3子排气管线7。在一些实施例中，止回阀可分别提供于连接部分和端部14、15、16和17中以防止气体从子排气管线6和7后向流动到旁路管线8和9或冲洗氩管线10。
图7为说明根据另一实施例的排气设备的示意图。当前实施例的排气设备可为先前实施例的排气设备的修改。因此，与在先前实施例中提出的描述相同的描述将不在此处提出。
参看图7，冲洗氩管线10可分叉成DCS子排气管线6和NH3子排气管线7。允许气体只在一个方向上流动的装置(例如，止回阀v14和v12)可提供于冲洗氩管线10与子排气管线6和7之间的连接部分15和17中。
在一些实施例中，如图7中所说明，孔口v15和v13可进一步提供于冲洗氩管线10与子排气管线6和7之间。孔口v15和v13中的每一个可被配置以将气体的流动速率维持在恒定水平。因此，归因于孔口v15和v13，冲洗氩可始终在冲洗氩管线10和子排气管线6和7中流动，而不管DCS冲洗氩阀v9和NH3冲洗氩阀v11是关闭还是打开。
举例来说，当DCS冲洗氩阀v9处于关闭状态中时，可将一定量的氩气填充于止回阀v14与DCS冲洗氩阀v9之间的排气管线中，以便防止气体在DCS子排气管线6中的回流。冲洗氩在孔口v15和v13处的流动速率可被设定为供应到冲洗氩管线10的冲洗氩的流动速率的约10％到约15％。
图8到图13为说明根据另一实施例的排气设备的示意图。当前实施例的排气设备可为先前实施例的排气设备的修改。因此，与在先前实施例中提出的描述相同的描述将不在此处提出。
参看图8和图9，排气设备可包含排气单元主体21、主排气管线22、DCS子排气管线23、NH3子排气管线24、DCS冲洗氩管线25、NH3冲洗氩管线26、DCS旁路管线27、NH3旁路管线28、连接部分29和30和筒形加热器孔洞33和34。
图8和图9中说明的排气设备的主排气管线22、DCS子排气管线23、NH3子排气管线24、DCS旁路管线27和NH3旁路管线28可分别对应于图6中说明的衬底处理设备的主排气管线5、DCS子排气管线6、NH3子排气管线7、DCS旁路管线8和NH3旁路管线9。
此外，图8中说明的排气设备的DCS冲洗氩管线25和NH3冲洗氩管线26可从图6中说明的冲洗氩管线10分叉。因此，可通过阀v9与v11(参看图6)的切换操作以交替方式将氩气供应到DCS冲洗氩管线25与NH3冲洗氩管线26。类似地，可通过阀v2与v5(参看图6)的切换操作以交替方式将DCS气体和NH3气体分别供应到DCS旁路管线27与NH3旁路管线28。
排气设备的连接部分29和30可连接到气体分析单元(未示出)。举例来说，连接部分29和30可连接到压力计，且因此可测量DCS子排气管线23和NH3子排气管线24的压力。在一些实施例中，连接部分29和30可连接到废气组分分析器，且因此可分析废气的组成以确定其余气体的量和组成以及气体供应状况(例如，流动速率和供应时间)。
此外，如上所述，DCS冲洗氩管线25、NH3冲洗氩管线26、DCS旁路管线27和NH3旁路管线28可包含防回流装置。防回流装置可为仅允许单向流动的止回阀和/或孔口。
图9为图8中描绘的排气设备的俯视图。DCS旁路管线27可在排气单元主体21的侧面连接到DCS子排气管线23，且NH3旁路管线28可在排气单元主体21的后面连接到NH3子排气管线24。
在一些实施例中，可将筒形加热器插入到筒形加热器孔洞33和34内以加热排气单元主体21。如果排气单元主体21被加热，那么可不将反应副产物沈积在内部排气管线上，或反应副产物可不在排气单元主体21中浮动。
图10和图11为沿着图8的线A-A'和B-B'截取的横截面图。参看图10中的排气单元的横截面图，从主排气管线22分叉的DCS排气路径49和NH3排气路径50可形成于排气单元主体21内部，且DCS排气路径49和NH3排气路径50可分别连接到DCS子排气管线23和NH3子排气管线24。
排气设备可还包含DCS气体供应环31和NH3气体供应环32。DCS气体供应环31可位于DCS排气路径49与DCS子排气管线23之间，且NH3气体供应环32可位于NH3排气路径50与NH3子排气管线24之间。
DCS气体供应环31和NH3气体供应环32可连接到DCS旁路管线27、NH3旁路管线28、DCS冲洗氩管线25和NH3冲洗氩管线26。因此，可通过DCS气体供应环31、DCS子排气管线23、DCS排气泵3和DCS洗涤器11排放绕过的DCS和DCS冲洗氩，且可通过NH3气体供应环32、NH3子排气管线24、NH3排气泵4和NH3洗涤器12排放绕过的NH3和NH3冲洗氩。
如图10中所说明，DCS旁路管线27可通过形成于排气单元主体21的侧面中的DCS旁路气体供应路径48连接到DCS气体供应环31。类似地，NH3旁路管线28可通过形成于排气单元主体21的后面中的NH3旁路气体供应路径(未示出)连接到NH3气体供应环32。
如图11中所说明，DCS冲洗氩管线25和NH3冲洗氩管线26可分别通过穿透排气单元主体21的上部部分的管连接到DCS气体供应环31和NH3气体供应环32。
可通过DCS冲洗氩管线25、NH3冲洗氩管线26、形成于排气单元主体21中的冲洗气体供应路径、DCS气体供应环31、NH3气体供应环32、DCS子排气管线23和NH3子排气管线24将冲洗气体(氩)排放到DCS排气泵3和NH3排气泵4。
类似地，可通过DCS旁路管线27、DCS旁路气体供应路径48、DCS气体供应环31和DCS子排气管线23将绕过的DCS排放到DCS排气泵3。此外，可通过NH3旁路管线28、NH3旁路气体供应路径(未示出)、NH3气体供应环32和NH3子排气管线24将绕过的NH3排放到NH3排气泵4。
图12为说明图8中描绘的排气设备的分解透视图，且图13为说明排气单元主体21的横截面图。参看图12，排气单元可包含上部板35、排气单元主体21、DCS气体供应环31和NH3气体供应环32和下部板36。
上部板35连接到主排气管线22，且如上所述，排气单元主体21可包含从排气单元主体21中的主排气管线22分叉的DCS排气路径49和NH3排气路径50。可将密封措施37插入于排气单元主体21与上部板35之间，且因此当排气单元主体21与上部板35相互耦合时，可提供密封(隔离)。在实施例中，密封措施可为O形环。
此外，冲洗气体供应器路径可形成于排气单元主体21中。举例来说，DCS冲洗氩供应路径39和NH3冲洗氩供应路径40可形成于排气单元主体21中，作为冲洗气体供应路径。DCS冲洗氩供应路径39可连接于DCS冲洗氩管线25与DCS气体供应环31之间。NH3冲洗氩供应路径40可连接于NH3冲洗氩管线26与NH3气体供应环32之间。
如图12和图13中所说明，将DCS气体供应环31和NH3气体供应环32插入到排气单元主体21内。DCS气体供应环31和NH3气体供应环32中的每一个可包含气体供应孔洞。可通过气体供应孔洞排放绕过的DCS气体和NH3气体、DCS冲洗氩和NH3冲洗氩。DCS气体供应环31和NH3气体供应环32将在下文作进一步描述。
参看图13，排气路径可连续地形成于排气单元主体21中。换句话说，可使路径钻孔通过排气单元主体21的上部和下部部分，使得可形成相互连接的排气路径。通过DCS冲洗氩供应路径39供应到排气单元主体21的冲洗氩可通过气体供应孔洞46而供应到DCS气体供应环31。此外，可通过气体供应孔洞47将通过NH3旁路管线28和NH3旁路气体供应路径(未示出)供应到排气单元主体21的绕过的NH3气体供应到NH3气体供应环32。附图中说明的孔洞的位置、大小和形状是实例。
下部板36的上部部分可连接到DCS气体供应环31和NH3气体供应环32，且下部板36的下部部分可连接到DCS子排气管线23和NH3子排气管线24。可将密封措施38插入于下部板36与气体供应环31和32之间。因此，当下部板36耦合到气体供应环31和32时，外面的空气可不渗透。在实施例中，密封措施可为O形环。
图14为说明根据实施例的气体供应环31或32的示意图。图15到图17为说明图14中说明的气体供应环的修改的横截面图。可将当前实施例的气体供应环应用到先前实施例的排气设备。
参看图14，气体供应环31或32可插入到排气单元主体21内，且可连接到DCS子排气管线23或NH3子排气管线24。气体供应环31或32可包含上部孔洞41、下部孔洞42和密封措施插入部分43和44。
上部孔洞41提供排放DCS和NH3冲洗氩所通过的路径，且下部孔洞42提供排放绕过的DCS和NH3所通过的路径。即，上部孔洞41可布置于下部孔洞42与包含第一区域的主排气管线22之间。通过将冲洗氩供应到如上所述布置的上部孔洞41，气帘可形成于排气路径中。此外，排放冲洗氩所通过的上部孔洞41位于气体供应环31或32的下部孔洞42与分别排放DCS和NH3(或分别排放NH3和DCS)所通过的第一区域之间，由此防止DCS和NH3相互会合且在排气单元中形成反应副产物。
可将O形环插入于密封措施插入部分43和44中。因此，通过上部孔洞41(或下部孔洞42)排放的气体可不泄漏到下部孔洞42(或上部孔洞41)。此外，可防止气体供应环31或32与排气单元主体21之间的气体泄漏。即，归因于密封措施(O形环)，穿过上部孔洞41和下部孔洞42的气体可不相互混合和与外面隔离。
参看图14，可使气体供应环31或32的上部部分45与形成于排气单元主体21内部的排气路径相互紧紧地接触且因此经由面部密封来密封。然而，在其它实施例中，可将例如O形环的密封措施提供于气体供应环31或32的上部部分45上。
如上所述，归因于上部孔洞41和下部孔洞42，冲洗氩气帘可均匀地形成于排气管线中，且因此可均匀地排放绕过的DCS气体或NH3气体。
此外，如图15到图17中所说明，可沿着气体供应环31或32的侧面对称地布置多个孔洞。举例来说，可如图15中所说明对称地布置四个孔洞，可如图16中所说明对称地布置八个孔洞，或可如图17中所说明对称地布置十六个孔洞。
可确定此类对称孔洞的直径和数目以使在旁路工艺期间的DCS气体和NH3气体的绝热膨胀(和气流速度的所得增大和温度降低)最小化。DCS和NH3都是可以液化的气体，且因此如果DCS或NH3的温度迅速地降低，那么固体副产物可形成于排气设备上(例如，在排气管线、泵或洗涤器上)。因此，可调整此类对称孔洞的直径和数目以预先地防止排气设备的堵塞。
换句话说，根据实施例，如图15到图17中所说明，可通过形成多个孔洞来减少每单位时间穿过单位孔洞(单个孔洞)的源气体或反应气体的量。因此，通过绝热膨胀，可能不会降低穿过下部孔洞42的绕过的源气体(DCS)或反应气体(NH3)的温度。
替代地，可通过形成小孔来减少每单位时间穿过单位孔洞(单个孔洞)的源气体或反应气体的量，以便防止由绝热膨胀造成的源气体或反应气体(NH3)的温度的降低。下部孔洞42的直径可在约2mm到约3mm的范围内。举例来说，下部孔洞42的直径可为2mm。
图18为说明根据实施例的薄膜制造方法的示意图。可使用先前实施例的排气设备或衬底处理设备来执行当前实施例的薄膜制造方法。因此，与在先前实施例中提出的描述相同的描述将不在此处提出。
参看图18，薄膜形成方法可包含供应源气体的第一步骤t1、冲洗源气体的第二步骤t2、供应反应气体的第三步骤t3和供应等离子体的第四步骤t4。可依序地供应源气体、反应气体和等离子体，且在供应源气体、反应气体和等离子体时，可将第一冲洗气体和第二冲洗气体连续地供应到反应空间。
此外，可执行第五步骤t5以在第一到第四步骤t1到t4后冲洗剩余气体。此外，第一到第四步骤t1到t4(或第一到第五步骤t1到t5)的循环可重复若干次。
在第二步骤t2期间，可通过排气单元的第一路径(例如，第一子排气管线)排放来自反应器的源气体和第一冲洗气体。同时，可将第二冲洗气体供应到排气单元的第二路径(例如，第二子排气管线)。第二冲洗气体可在排气单元的第二路径中形成气帘。
同时，当将所述源气体和所述反应气体中的一个供应到反应器时，可使另一气体绕过到所述排气单元。当在第一步骤t1中供应源气体时，反应气体可通过旁路管线流动到排气单元。通过旁路管线的此排气流可维持气体的连续流动，且因此可不断地维持气体管线和反应器的内部压力。
排放绕过的气体所通过的路径可与排放从反应器排放的气体所通过的路径不同。举例来说，在第三步骤t3期间，可将反应气体和第一冲洗气体供应到反应器，且在第四步骤t4期间，可从反应器排放反应气体和第一冲洗气体。在此情况下，可通过第二路径(例如，第二子排气管线)排放反应气体和第一冲洗气体，且可通过第一路径(例如，第一子排气管线)排放绕过的气体(源气体)。
图19为说明根据另一实施例的薄膜形成方法的示意图。当前实施例的薄膜形成方法可为先前实施例的薄膜形成方法的修改。因此，与在先前实施例中提出的描述相同的描述将不在此处提出。
薄膜形成方法可为通过原子层沉积工艺沉积氮化硅的方法。即，可将DCS气体和NH3气体作为源气体和反应气体依序地供应，且可与NH3气体的供应同步地供应等离子体。NH3气体可由等离子体激活且与吸附于衬底上的DCS分子反应，且因此，SixNy(氮化硅)层可形成于衬底上。可重复这些步骤以将SixNy层的厚度增加到目标厚度。
参看图19，包含DCS供应(第一步骤t1)、冲洗(第二步骤t2)、NH3预先流动(第三步骤t3)、NH3等离子体(第四步骤t4)和冲洗(第五步骤t5)的基本循环可重复若干次，直到沉积具有所要的厚度的薄膜。在第三步骤t3中，可在施加等离子体前供应NH3。归因于此NH3预先流动，可将NH3均匀地分布于反应空间中，且在下一个NH3激发操作(第四步骤t4)中，可将NH3等离子体均匀地分布于反应空间中。
在步骤t1到t5期间，可将处理氩Ar1连续地供应到反应空间。处理氩Ar1可均匀化反应空间的内部压力，且可具有冲洗在步骤t2或t5期间来自反应空间的DCS或NH3气体的功能。
此外，可通过考虑包含DCS的流动速率和NH3的流动速率的总气体流动速率在每一步骤中调整处理氩Ar1的流动速率。即，可将在步骤t1中供应到反应空间的处理氩Ar1的流动速率与DCS的流动速率的总和设定为等于在步骤t2中供应到反应空间的处理氩Ar1的流动速率。换句话说，在步骤t1中的处理氩Ar1的流动速率可低于在步骤t2中的处理氩Ar1的流动速率。
类似地，由于在步骤t3和t4中将NH3和处理氩Ar1供应到反应空间，因此在步骤t3和t4期间供应到反应空间的处理氩Ar1的流动速率可低于在步骤t2或t5中供应到反应空间的处理氩Ar1的流动速率。以此方式，可贯穿步骤t1到t5不断地维持供应到反应空间的气体的总流动速率。因此，可在步骤t1到t5期间不断地维持反应空间的内部压力，且可改善工艺稳定性。
参看图19，可在步骤t1到t5期间连续地供应冲洗氩Ar2。然而，不同于处理氩Ar1，冲洗氩Ar2可不供应到反应空间，但可通过冲洗氩管线10供应到DCS子排气管线6或NH3子排气管线7。在当前实施例中，冲洗氩Ar2可在步骤t1到t2期间流动到NH3子排气管线7，且在步骤t3到t5期间流动到DCS子排气管线6。
现将参看图19具体描述步骤t1到t5期间的气流。
1)步骤1(t1)：供应DCS(DCS馈入步骤)。在步骤1(t1)中，将DCS源气体供应到反应器且吸附于装载于反应器中的衬底中。
参看图6，打开DCS管线19的DCS供应阀V1以将DCS供应到反应器1。同时，通过处理氩管线18、第二处理氩供应阀v6和NH3管线20将处理氩Ar1供应到反应器1。此时，主排气管线5的排气阀v7处于打开的状态，且将反应器1中剩余的DCS和处理氩Ar1引到DCS子排气管线6和DCS排气泵3，且在由DCS洗涤器11净化后排放到外面。此时，NH3供应阀v4处于关闭的状态，且因此通过第一NH3旁路阀v5、NH3旁路管线9、第二NH3旁路阀v10、NH3排气泵4和NH3洗涤器12将NH3排放到外面。
同时，冲洗氩Ar2可通过冲洗氩管线10和NH3冲洗氩阀v11供应到NH3子排气管线7，且可接着通过NH3排气泵4和NH3洗涤器12排放到外面。供应到NH3子排气管线7的冲洗氩Ar2可在NH3子排气管线7与DCS子排气管线6之间形成气帘。因此，排放到DCS子排气管线6的DCS源气体可不回流到NH3子排气管线7，且因此可通过防止DCS源气体与NH3之间的反应而不使固体副产物形成于NH3子排气管线7上。
在此步骤中，第一DCS旁路阀v2、第二DCS旁路阀v8和DCS冲洗氩阀v9处于关闭状态中。在此情况下，可将例如止回阀(未示出)的防回流装置放置于NH3旁路管线9与NH3子排气管线7之间的连接部分16中。因此，排放到NH3子排气管线7的冲洗氩Ar2和NH3可不回流到NH3旁路管线9。在一些实施例中，在步骤1期间，可关闭第一NH3旁路阀v5以防止NH3流动到NH3旁路管线9。在此情况下，可减少NH3的消耗。
2)步骤2(t2)：冲洗DCS(DCS冲洗步骤)。在步骤2中，停止DCS的供应，且从反应器1冲洗尚未经历反应且在反应器1中和在衬底上剩余的DCS源气体。在此步骤中，关闭DCS供应阀v1和第二处理氩供应阀v6，且打开第一处理氩供应阀v3，以便通过DCS管线19将处理氩Ar1供应到反应器1。因此，可将DCS管线19、气体喷射单元2和反应器1中剩余的DCS气体冲洗到主排气管线5。
在步骤2期间，可通过第一DCS旁路阀v2、DCS旁路管线8、第二DCS旁路阀v8、DCS排气泵3和DCS洗涤器11将DCS排放到外面。
可将例如止回阀(未示出)的防回流装置放置于DCS旁路管线8与DCS子排气管线6之间的连接部分14中，以便防止气体从反应器1流动到DCS子排气管线6，且防止从DCS旁路管线8排放的DCS源气体沿着DCS旁路管线8回流。然而，在一些实施例中，在步骤2期间，可关闭第一DCS旁路阀v2以防止DCS气体流动到DCS旁路管线8。在此情况下，可减少DCS源气体的消耗。
在步骤2期间，像在步骤1中一样，可通过NH3旁路管线9、NH3子排气管线7、NH3排气泵4和NH3洗涤器12将NH3排放到外面。此外，冲洗氩Ar2可通过冲洗氩管线10和NH3冲洗氩阀v11流动到NH3子排气管线7，且因此气帘可形成于DCS子排气管线6与NH3子排气管线7之间。
3)步骤3(t3)：NH3预先流动(NH3预先流动操作)。在此步骤中，将NH3作为反应气体供应到反应器1。当将NH3供应到反应器1时，NH3在反应器1中的分布变得均匀，且当NH3在下一步骤4中由等离子体激活时，反应器1中的NH3自由基的浓度可变得均匀。
参看图6，打开NH3管线20的NH3供应阀v4以将NH3供应到反应器1。同时，通过处理氩管线18、第一处理氩供应阀v3和DCS管线19将处理氩Ar1供应到反应器1。此时，主排气管线5的排气阀v7可处于打开的状态中，且反应器1中剩余的NH3和处理氩Ar1可在经净化后通过NH3子排气管线7、NH3排气泵4和NH3洗涤器12排放到外面。在步骤3期间，第一NH3旁路阀v5、第二NH3旁路阀v10和NH3冲洗氩阀v11处于关闭状态中。
DCS供应阀v1处于关闭状态中，且因此可通过第一DCS旁路阀v2、DCS旁路管线8、第二DCS旁路阀v8、DCS子排气管线6、DCS排气泵3和DCS洗涤器11将DCS气体排放到外面。
同时，冲洗氩Ar2可通过冲洗氩管线10和DCS冲洗氩阀v9供应到DCS子排气管线6，且可接着通过DCS排气泵3和DCS洗涤器11排放到外面。供应到DCS子排气管线6的冲洗氩Ar2可在DCS子排气管线6与NH3子排气管线7之间形成气帘。因此，排放的NH3反应气体可不回流到DCS子排气管线6，且因此可通过防止NH3反应气体与DCS气体之间的反应而不使固体副产物形成于DCS子排气管线6上。
可将例如止回阀(未示出)的防回流装置放置于DCS旁路管线10与DCS子排气管线6之间的连接部分14中。因此，可防止在DCS子排气管线6中流动的DCS源气体和冲洗氩Ar2回流到DCS旁路管线8。然而，在步骤3中，可关闭第一DCS旁路阀v2以防止DCS气体流动到DCS旁路管线8。在此情况下，可减少DCS源气体的消耗。
4)步骤4(t4)：NH3由等离子体激活(等离子体激发步骤)。在此步骤中，在步骤3中供应到反应器1的NH3由等离子体激活。在此步骤中，连续地供应NH3，且以与步骤3中相同的方式操作和引导每一阀和每一气体。如图6中所说明，可在放置于反应器1内部的衬底上方通过就地等离子体方法产生等离子体。替代地，等离子体可在反应器1外面产生，且可通过远程等离子体方法供应到反应器1的反应空间。可使用紫外线(ultraviolet；UV)产生器替代使用RF产生器来激活NH3。
5)步骤5(t5)：冲洗NH3(NH3冲洗操作)。在步骤5(t5)中，停止NH3的供应，且从反应器1排放尚未经历反应且在反应器1中和衬底上剩余的NH3反应气体。在步骤5中，关闭NH3供应阀v4和第一处理氩供应阀v3，且打开第二处理氩供应阀v6，以便通过NH3管线20将处理氩Ar1供应到反应器1。因此，将NH3管线20、气体喷射单元2和反应器1中剩余的NH3气体冲洗到主排气管线5。此时，通过第一NH3旁路阀v5、NH3旁路管线9、第二NH3旁路阀v10、NH3子排气管线7、NH3排气泵4和NH3洗涤器12将NH3排放到外面。
可将例如止回阀(未示出)的防回流装置放置于NH3旁路管线9与NH3子排气管线7之间的连接部分16中，以便防止排放到NH3子排气管线7的冲洗氩Ar2和NH3回流到NH3旁路管线9。然而，可关闭第一NH3旁路阀v5以防止NH3流动到NH3旁路管线9。在此情况下，可减少NH3的消耗。
在步骤5期间，像在步骤3和4中一样，可通过DCS旁路管线8、DCS子排气管线6、DCS排气泵3和DCS洗涤器11将DCS气体排放到外面。冲洗氩Ar2可通过冲洗氩管线10和DCS冲洗氩阀v9流动到DCS子排气管线6，且因此气帘可形成于DCS子排气管线6与NH3子排气管线7之间。然而，在此步骤中，可关闭第一DCS旁路阀v2以防止DCS气体流动到DCS旁路管线8。在此情况下，可减少DCS源气体的消耗。
已基于原子层沉积工艺或等离子体原子层沉积工艺提出先前实施例的描述。然而，所述实施例只用于说明性目的。本发明概念是在第二区域中形成气帘，以防止当供应第一气体和通过第一区域排放第一气体时第一气体通过第二区域排放，和在第一区域中形成气帘以防止当供应第二气体和通过第二区域排放第二气体时第二气体通过第一区域排放，且本发明概念可不仅应用于沉积工艺，而且应用于化学气相沉积(chemical vapordeposition；CVD)工艺、清洁工艺和需要将流体分开来排放的其它工艺。
应理解，应仅按描述性意义且非出于限制的目的来考虑本文中所描述的实施例。每一个实施例内的特征或方面的描述通常应被认为是可用于其它实施例中的其它类似特征或方面。
虽然已参看图描述一或多个实施例，但所属领域的一般技术人员应理解，可在不脱离由所附权利要求定义的发明概念的精神和范围的情况下在其中进行形式和细节的各种改变。

Claims (24)

1.一种排气设备，包括：
第一区域；
连接到所述第一区域的第二区域；
连接到所述第一区域的第三区域；
连接到所述第二区域的第一气体管线，
其中当将气体供应到所述第一气体管线时，所述第一区域不与所述第二区域连通，但与所述第三区域连通；以及
放置于所述第二区域中的第一气体供应环，
其中所述第一气体供应环包括连接到所述第一气体管线的至少一个孔洞。
2.根据权利要求1所述的排气设备，还包括连接到所述第三区域的第二气体管线，
其中当将气体供应到所述第二气体管线时，所述第一区域不与所述第三区域连通，但与所述第二区域连通。
3.根据权利要求2所述的排气设备，其中所述第一气体管线与所述第二气体管线相互连接。
4.根据权利要求1所述的排气设备，还包括连接到所述第二区域的旁路管线。
5.根据权利要求4所述的排气设备，还包括放置于所述第二区域中的第一气体供应环，
其中所述第一气体供应环包括：
连接到所述第一气体管线的第一孔洞；以及
连接到所述旁路管线的第二孔洞。
6.根据权利要求5所述的排气设备，其中所述第一孔洞位于所述第二孔洞与所述第一区域之间。
7.根据权利要求6所述的排气设备，其中当将气体供应到所述第一气体管线时，将来自所述第一区域的气体排放到所述第三区域，且将来自所述旁路管线的气体排放到所述第二区域。
8.根据权利要求7所述的排气设备，其中通过所述第一气体管线供应的气体不与通过所述旁路管线供应的气体反应。
9.根据权利要求2所述的排气设备，其中所述第一气体管线包括第一打开/关闭单元，
所述第二气体管线包括第二打开/关闭单元，且
所述排气设备还包括被配置以控制所述第一和第二打开/闭合单元的控制器。
10.根据权利要求9所述的排气设备，还包括连接到所述第一区域、所述第二区域和所述第三区域中的至少一个的气体分析单元，
其中所述控制器与所述气体分析单元连通且确定所述第一和第二打开/闭合单元的操作时机。
11.一种排气设备，包括：
主排气管线；
上部板；
主体；
至少一个气体供应环；
下部板；
第一子排气管线；
第二子排气管线；以及
至少一个冲洗气体供应路径，其穿透所述主体且连接到所述气体供应环。
12.根据权利要求11所述的排气设备，其中从所述主排气管线分叉的至少一个排气路径形成于所述主体中，且所述排气路径与所述第一子排气管线和所述第二子排气管线连接。
13.根据权利要求12所述的排气设备，其中所述气体供应环位于所述排气路径与所述第一子排气管线之间或所述排气路径与所述第二子排气管线之间。
14.根据权利要求13所述的排气设备，还包括至少一个旁路气体供应路径，其穿透所述主体且连接到所述气体供应环。
15.根据权利要求14所述的排气设备，其中所述气体供应环包括在其侧面的至少一个气体孔洞，
其中所述至少一个气体孔洞包括：
连接到所述冲洗气体供应路径的上部孔洞；以及
连接到所述旁路气体供应路径的下部孔洞，
其中所述排气设备还包括在所述上部孔洞与所述下部孔洞之间的密封措施。
16.根据权利要求15所述的排气设备，其中通过所述冲洗气体供应路径和所述上部孔洞，排放到形成于所述主体中的所述排气路径的冲洗气体，在所述排气路径中形成气帘。
17.根据权利要求15所述的排气设备，其中通过所述冲洗气体供应路径和所述气体供应环的所述上部孔洞，流动到所述排气路径的气体为惰性气体，且
通过所述旁路气体供应路径和所述气体供应环的所述下部孔洞，流动到所述排气路径的气体为二氯硅烷(DCS，SiH2Cl2)气体或NH3气体。
18.根据权利要求11所述的排气设备，还包括连接到所述冲洗气体供应路径的防回流装置。
19.一种衬底处理设备，包括：
气体供应单元；
反应器；
排气单元；以及
排气泵单元，
其中所述气体供应单元包括：
至少一个气体管线，通过所述至少一个气体管线将气体从所述气体供应单元供应到所述反应器；
旁路管线，其从所述气体管线分叉且连接到所述排气单元；以及
冲洗气体管线，其从所述气体供应单元连接到所述排气单元。
20.根据权利要求19述的衬底处理设备，其中所述排气单元包括：
主排气管线；
上部板；
主体；
气体供应环；
下部板；以及
至少一个子排气管线，
其中所述主排气管线连接到所述反应器，且所述子排气管线连接到所述排气泵单元。
21.根据权利要求20所述的衬底处理设备，其中所述主体包括形成于所述主体中且从所述主排气管线分叉的至少一个排气路径，且所述排气路径连接到所述子排气管线，
其中所述气体供应环位于所述排气路径与所述子排气管线之间。
22.根据权利要求21述的衬底处理设备，还包括：
至少一个冲洗气体供应路径，其穿透所述上部板和所述主体且连接到所述排气路径和所述气体供应环；以及
至少一个旁路气体供应路径，其穿透所述主体且连接到排气路径和所述气体供应环，
其中所述冲洗气体供应路径连接到所述冲洗气体管线，且所述旁路气体供应路径连接到所述旁路管线。
23.根据权利要求22所述的衬底处理设备，其中所述气体供应环包括在所述主体的侧面的至少一个孔洞，
其中所述至少一个孔洞包括：
上部孔洞，来自所述冲洗气体供应路径的冲洗气体穿过所述上部孔洞；以及
下部孔洞，来自所述旁路气体供应路径的旁路气体穿过所述下部孔洞。
24.根据权利要求23所述的衬底处理设备，其中所述下部孔洞位于所述上部孔洞与所述下部板之间。
CN201710738549.4A 2016-08-25 2017-08-24 排气设备和使用其的衬底处理设备 Active CN107785221B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0108380 2016-08-25
KR1020160108380A KR102613349B1 (ko) 2016-08-25 2016-08-25 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법

Publications (2)

Publication Number Publication Date
CN107785221A CN107785221A (zh) 2018-03-09
CN107785221B true CN107785221B (zh) 2019-12-31

Family

ID=61241853

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710738549.4A Active CN107785221B (zh) 2016-08-25 2017-08-24 排气设备和使用其的衬底处理设备

Country Status (4)

Country Link
US (1) US10364493B2 (zh)
KR (1) KR102613349B1 (zh)
CN (1) CN107785221B (zh)
TW (1) TWI672729B (zh)

Families Citing this family (308)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US11421321B2 (en) 2015-07-28 2022-08-23 Asm Ip Holding B.V. Apparatuses for thin film deposition
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
TWI779134B (zh) 2017-11-27 2022-10-01 荷蘭商Ａｓｍ智慧財產控股私人有限公司 用於儲存晶圓匣的儲存裝置及批爐總成
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102657269B1 (ko) 2018-02-14 2024-04-16 에이에스엠 아이피 홀딩 비.브이. 주기적 증착 공정에 의해 기판 상에 루테늄-함유 막을 증착하는 방법
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TWI819010B (zh) 2018-06-27 2023-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
TWI751420B (zh) 2018-06-29 2022-01-01 荷蘭商Ａｓｍ知識產權私人控股有限公司 薄膜沉積方法
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
JP1648531S (zh) * 2019-01-28 2019-12-23
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP7509548B2 (ja) 2019-02-20 2024-07-02 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
WO2020235873A1 (ko) * 2019-05-22 2020-11-26 (주)엘오티씨이에스 반도체 제조설비용 배기관 내 파우더 침적 방지 장치, 이를 구비하는 배기 장비 및 이를 이용한 배기관 내 파우더 침적 방지 방법
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) * 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
CN112635282A (zh) 2019-10-08 2021-04-09 Asm Ip私人控股有限公司 具有连接板的基板处理装置、基板处理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN112992667A (zh) 2019-12-17 2021-06-18 Asm Ip私人控股有限公司 形成氮化钒层的方法和包括氮化钒层的结构
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TWI755979B (zh) * 2019-12-20 2022-02-21 台灣積體電路製造股份有限公司 薄膜沉積系統以及沉積薄膜方法
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202140831A (zh) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含氮化釩層及包含該層的結構之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20210152123A (ko) * 2020-06-08 2021-12-15 주성엔지니어링(주) 기판처리방법
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220006455A (ko) 2020-07-08 2022-01-17 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
US11427910B2 (en) * 2020-10-20 2022-08-30 Sky Tech Inc. Atomic layer deposition equipment capable of reducing precursor deposition and atomic layer deposition process method using the same
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
US12027426B2 (en) 2021-01-29 2024-07-02 Applied Materials, Inc. Image-based digital control of plasma processing
US20220246403A1 (en) * 2021-01-29 2022-08-04 Applied Materials, Inc. Digital control of plasma processing
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (600)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089507A (en) 1963-05-14 Air eject system control valve
US2059480A (en) 1933-09-20 1936-11-03 John A Obermaier Thermocouple
US2161626A (en) 1937-09-25 1939-06-06 Walworth Patents Inc Locking device
US2266416A (en) 1939-01-14 1941-12-16 Western Electric Co Control apparatus
US2280778A (en) 1939-09-29 1942-04-28 John C Andersen Garden tool
US2410420A (en) 1944-01-01 1946-11-05 Robert B Bennett Scraper
US2563931A (en) 1946-04-02 1951-08-14 Honeywell Regulator Co Rate responsive thermocouple
US2660061A (en) 1949-03-05 1953-11-24 Dominion Eng Works Ltd Immersion type thermocouple temperature measuring device
US2745640A (en) 1953-09-24 1956-05-15 American Viscose Corp Heat exchanging apparatus
GB752277A (en) 1953-10-28 1956-07-11 Canadian Ind 1954 Ltd Improved thermocouple unit
US3094396A (en) 1959-07-07 1963-06-18 Continental Can Co Method of and apparatus for curing internal coatings on can bodies
US2990045A (en) 1959-09-18 1961-06-27 Lipe Rollway Corp Thermally responsive transmission for automobile fan
US3038951A (en) 1961-01-19 1962-06-12 Leeds & Northrup Co Fast acting totally expendable immersion thermocouple
US3232437A (en) 1963-03-13 1966-02-01 Champlon Lab Inc Spin-on filter cartridge
US3410349A (en) 1964-01-02 1968-11-12 Ted R. Troutman Tubing scraper and method
US3263502A (en) 1964-01-21 1966-08-02 Redwood L Springfield Multiple thermocouple support
FR1408266A (fr) 1964-06-30 1965-08-13 Realisations Electr Et Electro Prise de raccordement pour thermocouples
US3588192A (en) 1969-06-02 1971-06-28 Trw Inc Hydraulic skid control system
US3647387A (en) 1970-03-19 1972-03-07 Stanford Research Inst Detection device
US3647716A (en) 1970-04-03 1972-03-07 Westvaco Corp Transport reactor with a venturi tube connection to a combustion chamber for producing activated carbon
US3713899A (en) 1970-11-12 1973-01-30 Ford Motor Co Thermocouple probe
US3885504A (en) 1971-01-09 1975-05-27 Max Baermann Magnetic stabilizing or suspension system
US3718429A (en) 1971-03-15 1973-02-27 Du Pont No-no2 analyzer
CA1002299A (en) 1971-06-24 1976-12-28 William H. Trembley Installation tool
US3833492A (en) 1971-09-22 1974-09-03 Pollution Control Ind Inc Method of producing ozone
US3862397A (en) 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
FR2181175A5 (zh) 1972-04-20 1973-11-30 Commissariat Energie Atomique
JPS5132766B2 (zh) 1972-07-25 1976-09-14
JPS5539903B2 (zh) 1972-10-19 1980-10-14
DE7242602U (zh) 1972-11-20 1976-04-29 Hoogovens Ijmuiden B.V., Ijmuiden (Niederlande)
DE2427992A1 (de) 1973-06-13 1975-03-13 Thermal Syndicate Ltd Verfahren zum messen hoher temperaturen mit thermoelementen
US3854443A (en) 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
DE2407133B2 (de) 1974-02-15 1976-12-09 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Verfahren und vorrichtung zur bestimmung von stickoxid
US3904371A (en) 1974-03-04 1975-09-09 Beckman Instruments Inc Chemiluminescent ammonia detection
US3887790A (en) 1974-10-07 1975-06-03 Vernon H Ferguson Wrap-around electric resistance heater
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4054071A (en) 1975-06-17 1977-10-18 Aetna-Standard Engineering Company Flying saw with movable work shifter
DE2610556C2 (de) 1976-03-12 1978-02-02 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt
USD249341S (en) 1976-11-11 1978-09-12 Umc Industries, Inc. Electro-mechanical pulser
US4194536A (en) 1976-12-09 1980-03-25 Eaton Corporation Composite tubing product
US4181330A (en) 1977-03-22 1980-01-01 Noriatsu Kojima Horn shaped multi-inlet pipe fitting
US4164959A (en) 1977-04-15 1979-08-21 The Salk Institute For Biological Studies Metering valve
US4176630A (en) 1977-06-01 1979-12-04 Dynair Limited Automatic control valves
US4126027A (en) 1977-06-03 1978-11-21 Westinghouse Electric Corp. Method and apparatus for eccentricity correction in a rolling mill
US4145699A (en) 1977-12-07 1979-03-20 Bell Telephone Laboratories, Incorporated Superconducting junctions utilizing a binary semiconductor barrier
US4217463A (en) 1978-03-13 1980-08-12 National Distillers And Chemical Corporation Fast responsive, high pressure thermocouple
US4234449A (en) 1979-05-30 1980-11-18 The United States Of America As Represented By The United States Department Of Energy Method of handling radioactive alkali metal waste
US4355912A (en) 1980-09-12 1982-10-26 Haak Raymond L Spring loaded sensor fitting
US4466766A (en) 1981-05-20 1984-08-21 Ruska Instrument Corporation Transfer apparatus
JPS5819462A (ja) 1981-07-24 1983-02-04 Kawasaki Steel Corp 電縫溶接鋼管
FR2529714A1 (fr) 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede de realisation de l'oxyde de champ d'un circuit integre
US4454370A (en) 1982-09-07 1984-06-12 Wahl Instruments, Inc. Thermocouple surface probe
US4444990A (en) 1982-09-08 1984-04-24 Servo Corporation Of America Heat sensing device
JPS59211779A (ja) 1983-05-14 1984-11-30 Toshiba Corp 圧縮機
US4537001A (en) 1983-05-23 1985-08-27 Uppstroem Leif R Building elements
US4527005A (en) 1984-03-13 1985-07-02 The United States Of America As Represented By The United States Department Of Energy Spring loaded thermocouple module
US4611966A (en) 1984-05-30 1986-09-16 Johnson Lester R Apparatus for transferring semiconductor wafers
US4590326A (en) 1984-06-14 1986-05-20 Texaco Inc. Multi-element thermocouple
US4579378A (en) 1984-10-31 1986-04-01 Snyders Robert V Mortar joint pointing guide
US4620998A (en) 1985-02-05 1986-11-04 Haresh Lalvani Crescent-shaped polygonal tiles
US4749416A (en) 1986-08-01 1988-06-07 System Planning Corporation Immersion pyrometer with protective structure for sidewall use
US4721533A (en) 1986-08-01 1988-01-26 System Planning Corporation Protective structure for an immersion pyrometer
USD311126S (en) 1986-12-23 1990-10-09 Joseph Crowley Shelf extending mounting bracket for additional product display
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
JPH0777211B2 (ja) 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
US4854266A (en) 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
US4830515A (en) 1987-12-28 1989-05-16 Omega Engineering, Inc. Mounting clip for a thermocouple assembly
US4949848A (en) 1988-04-29 1990-08-21 Fluoroware, Inc. Wafer carrier
IT1227708B (it) 1988-07-29 1991-05-06 Pomini Farrel Spa Dispositivo di rilevamento della temperatura del materiale contenuto entro un apparecchio chiuso.
US5158128A (en) 1988-09-01 1992-10-27 Sumitec, Inc. Thermocouple for a continuous casting machine
JPH02185038A (ja) 1989-01-11 1990-07-19 Nec Corp 熱処理装置
US4934831A (en) 1989-03-20 1990-06-19 Claud S. Gordon Company Temperature sensing device
US5061083A (en) 1989-06-19 1991-10-29 The United States Of America As Represented By The Department Of Energy Temperature monitoring device and thermocouple assembly therefor
EP0454846B1 (en) 1989-11-22 1996-09-11 Nippon Steel Corporation Thermocouple-type temperature sensor and method of measuring temperature of molten steel
LU87693A1 (fr) 1990-03-07 1991-10-08 Wurth Paul Sa Sonde de prise d'echantillons gazeux et de mesures thermiques dans un four a cuve
US5356672A (en) 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
JPH0464025A (ja) 1990-07-02 1992-02-28 Matsushita Electric Ind Co Ltd 調理器用温度センサー
EP0493609B1 (en) 1990-07-18 1997-09-10 Sumitomo Electric Industries, Ltd. Method and device for manufacturing diamond
US5228114A (en) 1990-10-30 1993-07-13 Tokyo Electron Sagami Limited Heat-treating apparatus with batch scheme having improved heat controlling capability
US5071258A (en) 1991-02-01 1991-12-10 Vesuvius Crucible Company Thermocouple assembly
JPH0523079A (ja) 1991-07-19 1993-02-02 Shimano Inc 釣り竿及びその製造方法
US5294778A (en) 1991-09-11 1994-03-15 Lam Research Corporation CVD platen heater system utilizing concentric electric heating elements
US5154301A (en) 1991-09-12 1992-10-13 Fluoroware, Inc. Wafer carrier
JPH05118928A (ja) 1991-10-25 1993-05-14 Tokyo Electron Ltd 接触式の温度測定方法
NL9200446A (nl) 1992-03-10 1993-10-01 Tempress B V Inrichting voor het behandelen van microschakeling-schijven (wafers).
JPH0653210A (ja) 1992-07-28 1994-02-25 Nec Corp 半導体装置
EP0582019B1 (en) 1992-08-04 1995-10-18 International Business Machines Corporation Fully automated and computerized conveyor based manufacturing line architectures adapted to pressurized sealable transportable containers
US5246218A (en) 1992-09-25 1993-09-21 Intel Corporation Apparatus for securing an automatically loaded wafer cassette on a wafer processing equipment
US6438502B1 (en) 1992-10-07 2002-08-20 Dallas Semiconductor Corporation Environmental condition sensor device and method
US6235858B1 (en) 1992-10-30 2001-05-22 Ppg Industries Ohio, Inc. Aminoplast curable film-forming compositions providing films having resistance to acid etching
DE4244189C2 (de) 1992-12-24 1995-06-01 Busch Dieter & Co Prueftech Anlegetemperaturfühler
USD353452S (en) 1993-04-27 1994-12-13 Groenhoff Larry C Window adapter for portable box fans
US5616264A (en) 1993-06-15 1997-04-01 Tokyo Electron Limited Method and apparatus for controlling temperature in rapid heat treatment system
JP3667781B2 (ja) 1993-07-16 2005-07-06 株式会社日立製作所 エンジンシステムの診断装置
JPH07109576A (ja) 1993-10-07 1995-04-25 Shinko Seiki Co Ltd プラズマｃｖｄによる成膜方法
JP2682403B2 (ja) 1993-10-29 1997-11-26 日本電気株式会社 半導体装置の製造方法
JPH07209093A (ja) 1994-01-20 1995-08-11 Tokyo Electron Ltd 温度計
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JPH07297271A (ja) 1994-04-22 1995-11-10 Shinko Electric Co Ltd 異サイズのウェ−ハカセットを任意に支持可能な支持機構
US6447232B1 (en) 1994-04-28 2002-09-10 Semitool, Inc. Semiconductor wafer processing apparatus having improved wafer input/output handling system
KR0144956B1 (ko) 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
US5423942A (en) 1994-06-20 1995-06-13 Texas Instruments Incorporated Method and apparatus for reducing etching erosion in a plasma containment tube
US6022414A (en) 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US5669713A (en) 1994-09-27 1997-09-23 Rosemount Inc. Calibration of process control temperature transmitter
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
DE69511425T2 (de) 1994-11-08 2000-03-09 Vermeer Tech Inc Herstellungshilfe für online-dienste mit gebührenfeststellung
JPH08181135A (ja) 1994-12-22 1996-07-12 Sharp Corp 半導体装置の製造方法
US5716133A (en) 1995-01-17 1998-02-10 Applied Komatsu Technology, Inc. Shielded heat sensor for measuring temperature
US5761328A (en) 1995-05-22 1998-06-02 Solberg Creations, Inc. Computer automated system and method for converting source-documents bearing alphanumeric text relating to survey measurements
US5708825A (en) 1995-05-26 1998-01-13 Iconovex Corporation Automatic summary page creation and hyperlink generation
US5663899A (en) 1995-06-05 1997-09-02 Advanced Micro Devices Redundant thermocouple
US5982931A (en) 1995-06-07 1999-11-09 Ishimaru; Mikio Apparatus and method for the manipulation of image containing documents
USD392855S (en) 1995-06-26 1998-03-31 Pillow Daryl R Floor protection template for use while spray-painting door frames
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
JP3504784B2 (ja) 1995-09-07 2004-03-08 東京エレクトロン株式会社 熱処理方法
JPH0989676A (ja) 1995-09-21 1997-04-04 Casio Comput Co Ltd 電子体温計
US5791782A (en) 1995-09-21 1998-08-11 Fusion Systems Corporation Contact temperature probe with unrestrained orientation
US6299404B1 (en) 1995-10-27 2001-10-09 Brooks Automation Inc. Substrate transport apparatus with double substrate holders
US5954375A (en) 1995-12-21 1999-09-21 Edstrom Industries, Inc. Sanitary fitting having ferrule with grooved undercut
US5697706A (en) 1995-12-26 1997-12-16 Chrysler Corporation Multi-point temperature probe
KR100212132B1 (ko) 1996-04-24 1999-08-02 윤종용 횡형 확산로의 프로파일 열전대
US5844683A (en) 1996-05-22 1998-12-01 Applied Materials, Inc. Position sensor system for substrate holders
US5779203A (en) 1996-06-28 1998-07-14 Edlinger; Erich Adjustable wafer cassette stand
EP0818671A3 (en) 1996-07-12 1998-07-08 Isuzu Ceramics Research Institute Co., Ltd. A ceramic sheath type thermocouple
US5987480A (en) 1996-07-25 1999-11-16 Donohue; Michael Method and system for delivering documents customized for a particular user over the internet using imbedded dynamic content
US5806980A (en) 1996-09-11 1998-09-15 Novellus Systems, Inc. Methods and apparatus for measuring temperatures at high potential
US5857777A (en) 1996-09-25 1999-01-12 Claud S. Gordon Company Smart temperature sensing device
US6073973A (en) 1996-10-31 2000-06-13 Stanley Aviation Corporation Lightweight positive lock coupling
JP3740587B2 (ja) 1996-11-25 2006-02-01 山里産業株式会社 熱電対
US5753835A (en) 1996-12-12 1998-05-19 Caterpillar Inc. Receptacle for holding a sensing device
US5984391A (en) 1997-02-03 1999-11-16 Novellus Systems, Inc. Microfeature wafer handling apparatus and methods
US20020174106A1 (en) 1997-02-10 2002-11-21 Actioneer, Inc. Method and apparatus for receiving information in response to a request
JP3492135B2 (ja) 1997-02-13 2004-02-03 三菱重工業株式会社 熱流束計
JPH10239165A (ja) 1997-02-27 1998-09-11 Sony Corp 基板の温度測定器、基板の温度を測定する方法および基板の加熱方法
US5947718A (en) 1997-03-07 1999-09-07 Semitool, Inc. Semiconductor processing furnace
JP3124506B2 (ja) 1997-03-14 2001-01-15 白光株式会社 ヒータ・センサ複合体
US6104401A (en) 1997-06-12 2000-08-15 Netscape Communications Corporation Link filters
EP0887632A1 (en) 1997-06-24 1998-12-30 Isuzu Ceramics Research Institute Co., Ltd. A ceramic thermocouple for measuring temperature of molten metal
US5884640A (en) 1997-08-07 1999-03-23 Applied Materials, Inc. Method and apparatus for drying substrates
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6104011A (en) 1997-09-04 2000-08-15 Watlow Electric Manufacturing Company Sheathed thermocouple with internal coiled wires
AUPO904597A0 (en) 1997-09-08 1997-10-02 Canon Information Systems Research Australia Pty Ltd Method for non-linear document conversion and printing
WO1999018496A1 (en) 1997-10-07 1999-04-15 Electronics Development Corporation Transducer assembly with smart connector
JPH11118615A (ja) 1997-10-09 1999-04-30 Kakunenryo Cycle Kaihatsu Kiko 伸縮性を有する被測定物用温度センサ
KR100551980B1 (ko) 1997-11-03 2006-02-20 에이에스엠 아메리카, 인코포레이티드 저질량 지지체를 이용한 웨이퍼의 처리방법 및 장치
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
US6136211A (en) 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
US6574644B2 (en) 1997-11-26 2003-06-03 Siemens Corporate Research, Inc Automatic capturing of hyperlink specifications for multimedia documents
US6013920A (en) 1997-11-28 2000-01-11 Fortrend Engineering Coirporation Wafer-mapping load post interface having an effector position sensing device
JPH11183264A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
JPH11183265A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
EP1049641A4 (en) 1998-01-16 2004-10-13 Pri Automation Inc CASSETTE POSITIONING AND DETECTION SYSTEM FOR SEMICONDUCTOR WAFER
US6091062A (en) 1998-01-27 2000-07-18 Kinetrix, Inc. Method and apparatus for temperature control of a semiconductor electrical-test contractor assembly
TWI237305B (en) 1998-02-04 2005-08-01 Nikon Corp Exposure apparatus and positioning apparatus of substrate receiving cassette
US7354873B2 (en) 1998-02-05 2008-04-08 Asm Japan K.K. Method for forming insulation film
US7582575B2 (en) 1998-02-05 2009-09-01 Asm Japan K.K. Method for forming insulation film
US7181501B2 (en) 1998-03-19 2007-02-20 Isochron, Inc. Remote data acquisition, transmission and analysis system including handheld wireless equipment
JPH11287715A (ja) 1998-04-02 1999-10-19 Canon Inc 熱電対
US6060721A (en) 1998-05-06 2000-05-09 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus for detecting correct positioning of a wafer cassette
JP2002515648A (ja) 1998-05-11 2002-05-28 セミトゥール・インコーポレイテッド 加熱反応炉の温度制御システム
USD412270S (en) 1998-08-10 1999-07-27 David Frank Fredrickson Article lifter
US6344084B1 (en) 1998-09-11 2002-02-05 Japan Science And Technology Corporation Combinatorial molecular layer epitaxy device
US6257758B1 (en) 1998-10-09 2001-07-10 Claud S. Gordon Company Surface temperature sensor
US6462671B2 (en) 1998-10-20 2002-10-08 Brendyl Trent Bushner Remote securities based data reception and order system
KR100317238B1 (ko) 1998-11-03 2002-02-19 윤종용 가열로 온도검출용 스파이크 열전대 소자_
US6310328B1 (en) 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
US6607948B1 (en) 1998-12-24 2003-08-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate using an SiGe layer
US6496819B1 (en) 1998-12-28 2002-12-17 Oracle Corporation Rewriting a query in terms of a summary based on functional dependencies and join backs, and based on join derivability
KR100281094B1 (ko) 1998-12-30 2001-02-01 서평원 이동 통신 시스템에서 셀 탐색 방법
JP2000329447A (ja) 1999-05-17 2000-11-30 Matsushita Refrig Co Ltd 冷蔵庫および除霜用ヒーター
US6119710A (en) 1999-05-26 2000-09-19 Cyber Instrument Technologies Llc Method for wide range gas flow system with real time flow measurement and correction
US6555183B2 (en) 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
US6548402B2 (en) 1999-06-11 2003-04-15 Applied Materials, Inc. Method of depositing a thick titanium nitride film
JP3701148B2 (ja) 1999-07-28 2005-09-28 株式会社日立製作所 コンテンツの配信方法
US6293700B1 (en) 1999-09-24 2001-09-25 Fluke Corporation Calibrated isothermal assembly for a thermocouple thermometer
US7010580B1 (en) 1999-10-08 2006-03-07 Agile Software Corp. Method and apparatus for exchanging data in a platform independent manner
MXPA02003794A (es) 1999-10-13 2002-12-13 Texaco Development Corp Tubo protector de termopar reforzado con zafiro.
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
KR100547248B1 (ko) 1999-11-12 2006-02-01 주식회사 하이닉스반도체 알루미나를 사용한 반도체 소자의 게이트 절연막 형성방법
EP1107512A1 (en) 1999-12-03 2001-06-13 Sony International (Europe) GmbH Communication device and software for operating multimedia applications
US7055094B2 (en) 1999-12-30 2006-05-30 Rutgers, The State University Of New Jersey Virtual tags and the process of virtual tagging utilizing user feedback in transformation rules
US20020009119A1 (en) 2000-02-11 2002-01-24 Matthew William T. Environmental heat stress monitor
AU4733601A (en) 2000-03-10 2001-09-24 Cyrano Sciences Inc Control for an industrial process using one or more multidimensional variables
JP3676983B2 (ja) 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置
JP2001342570A (ja) 2000-03-30 2001-12-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
JP2004507074A (ja) 2000-04-06 2004-03-04 エーエスエム　アメリカ　インコーポレイテッド ガラス質材料用バリアコーティング
US6641350B2 (en) 2000-04-17 2003-11-04 Hitachi Kokusai Electric Inc. Dual loading port semiconductor processing equipment
US6559026B1 (en) 2000-05-25 2003-05-06 Applied Materials, Inc Trench fill with HDP-CVD process including coupled high power density plasma deposition
EP1160838B1 (en) 2000-05-31 2007-12-05 Tokyo Electron Limited Heat treatment system and method
USD455024S1 (en) 2000-06-09 2002-04-02 Levenger Company Portable writing surface
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
WO2001097260A2 (en) 2000-06-15 2001-12-20 Koninklijke Philips Electronics N.V. Holder for a substrate cassette and device provided with such a holder
JP3497450B2 (ja) 2000-07-06 2004-02-16 東京エレクトロン株式会社 バッチ式熱処理装置及びその制御方法
US20020136214A1 (en) 2000-08-14 2002-09-26 Consumer Direct Link Pervasive computing network architecture
EP1251551A1 (en) 2000-08-30 2002-10-23 Ibiden Co., Ltd. Ceramic heater for semiconductor manufacturing and inspecting equipment
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US6632068B2 (en) 2000-09-27 2003-10-14 Asm International N.V. Wafer handling system
KR100688484B1 (ko) 2000-11-30 2007-02-28 삼성전자주식회사 활성화 산소를 이용하여 기판을 처리하는 장치 및 그 방법
US20020069222A1 (en) 2000-12-01 2002-06-06 Wiznet, Inc. System and method for placing active tags in HTML document
US6913152B2 (en) 2000-12-04 2005-07-05 Peter Zuk, Jr. Disposable vacuum filtration apparatus capable of detecting microorganisms and particulates in liquid samples
US6814096B2 (en) 2000-12-15 2004-11-09 Nor-Cal Products, Inc. Pressure controller and method
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US20020152244A1 (en) 2000-12-22 2002-10-17 International Business Machines Corporation Method and apparatus to dynamically create a customized user interface based on a document type definition
US20020151327A1 (en) 2000-12-22 2002-10-17 David Levitt Program selector and guide system and method
JP4633269B2 (ja) 2001-01-15 2011-02-16 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP4429300B2 (ja) 2001-01-25 2010-03-10 東京エレクトロン株式会社 電子デバイス材料の製造方法
US6660662B2 (en) 2001-01-26 2003-12-09 Applied Materials, Inc. Method of reducing plasma charge damage for plasma processes
WO2002063535A2 (en) 2001-02-07 2002-08-15 Exalt Solutions, Inc. Intelligent multimedia e-catalog
JP2005033221A (ja) 2001-02-08 2005-02-03 Tokyo Electron Ltd 基板載置台および処理装置
US7072061B2 (en) 2001-02-13 2006-07-04 Ariba, Inc. Method and system for extracting information from RFQ documents and compressing RFQ files into a common RFQ file type
KR100410991B1 (ko) 2001-02-22 2003-12-18 삼성전자주식회사 반도체 제조장치의 로드포트
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7111232B1 (en) 2001-03-07 2006-09-19 Thomas Layne Bascom Method and system for making document objects available to users of a network
TW538327B (en) 2001-04-24 2003-06-21 Unit Instr Inc System and method for a mass flow controller
KR20020086763A (ko) 2001-05-10 2002-11-20 주식회사 엘지이아이 플라즈마를 이용한 연속중합장치용 열전대
US20030002562A1 (en) 2001-06-27 2003-01-02 Yerlikaya Y. Denis Temperature probe adapter
JP2003035574A (ja) 2001-07-23 2003-02-07 Mitsubishi Heavy Ind Ltd 応答型センサ及び応用計測システム
US20080268635A1 (en) 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US6435865B1 (en) 2001-07-30 2002-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for positioning gas injectors in a vertical furnace
US6678583B2 (en) 2001-08-06 2004-01-13 Seminet, Inc. Robotic storage buffer system for substrate carrier pods
JP3775262B2 (ja) 2001-08-09 2006-05-17 ヤマハ株式会社 電子楽器及び電子楽器システム
US20030035002A1 (en) 2001-08-15 2003-02-20 Samsung Electronics Co., Ltd. Alternate interpretation of markup language documents
JP3832294B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
JP3832293B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
US9708707B2 (en) 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
AU2002333601A1 (en) 2001-09-14 2003-04-01 Asm America, Inc. Metal nitride deposition by ald using gettering reactant
US6756085B2 (en) 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US6782305B2 (en) 2001-10-01 2004-08-24 Massachusetts Institute Of Technology Method of geometric information sharing and parametric consistency maintenance in a collaborative design environment
US20040253867A1 (en) 2001-11-05 2004-12-16 Shuzo Matsumoto Circuit part connector structure and gasket
US20040010772A1 (en) 2001-11-13 2004-01-15 General Electric Company Interactive method and system for faciliting the development of computer software applications
JP2003153706A (ja) 2001-11-20 2003-05-27 Toyobo Co Ltd 面ファスナー雌材及びその製造方法
US7017514B1 (en) 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
US6638879B2 (en) 2001-12-06 2003-10-28 Macronix International Co., Ltd. Method for forming nitride spacer by using atomic layer deposition
SE0104252D0 (sv) 2001-12-17 2001-12-17 Sintercast Ab New device
US6580050B1 (en) 2002-01-16 2003-06-17 Pace, Incorporated Soldering station with built-in self-calibration function
KR100997699B1 (ko) 2002-03-05 2010-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
JP4157914B2 (ja) 2002-03-20 2008-10-01 坂野 數仁 温度測定装置及び温度測定方法
US20030231698A1 (en) 2002-03-29 2003-12-18 Takatomo Yamaguchi Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus
US6797525B2 (en) 2002-05-22 2004-09-28 Agere Systems Inc. Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process
KR20030092305A (ko) 2002-05-29 2003-12-06 삼성전자주식회사 고온 언도우프 막 증착 설비의 챔버 외벽에 대한 온도측정장치
JP3670628B2 (ja) 2002-06-20 2005-07-13 株式会社東芝 成膜方法、成膜装置、および半導体装置の製造方法
WO2004008493A2 (en) 2002-07-15 2004-01-22 Aviza Technology, Inc. Method and apparatus for supporting semiconductor wafers
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP5005170B2 (ja) 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
JP4231953B2 (ja) 2002-09-24 2009-03-04 ペガサスネット株式会社 耳孔式ｓａｗ体温計及び該体温計による体温管理システム
US7749563B2 (en) 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
JP3671951B2 (ja) 2002-10-08 2005-07-13 住友電気工業株式会社 測温装置及びそれを用いたセラミックスヒータ
US7080545B2 (en) 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
US6821909B2 (en) 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
US6676290B1 (en) 2002-11-15 2004-01-13 Hsueh-Yu Lu Electronic clinical thermometer
WO2004049408A1 (ja) 2002-11-28 2004-06-10 Tokyo Electron Limited 基板処理システム、塗布現像装置及び基板処理装置
CN2588350Y (zh) 2002-12-26 2003-11-26 张连合 一种热电偶
US7163721B2 (en) 2003-02-04 2007-01-16 Tegal Corporation Method to plasma deposit on organic polymer dielectric film
US7223014B2 (en) 2003-03-28 2007-05-29 Intempco Controls Ltd. Remotely programmable integrated sensor transmitter
JP2004336019A (ja) 2003-04-18 2004-11-25 Advanced Lcd Technologies Development Center Co Ltd 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置
KR200319645Y1 (ko) 2003-04-28 2003-07-12 이규옥 웨이퍼 캐리어 고정 장치
US20090204403A1 (en) 2003-05-07 2009-08-13 Omega Engineering, Inc. Speech generating means for use with signal sensors
TW200507141A (en) 2003-05-12 2005-02-16 Agere Systems Inc Method of mass flow control flow verification and calibration
US20050000428A1 (en) 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
USD505590S1 (en) 2003-05-22 2005-05-31 Kraft Foods Holdings, Inc. Susceptor tray
JP4823690B2 (ja) 2003-06-16 2011-11-24 東京エレクトロン株式会社 成膜方法および半導体装置の製造方法
DE10328660B3 (de) 2003-06-26 2004-12-02 Infineon Technologies Ag Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers
ATE468421T1 (de) 2003-06-27 2010-06-15 Sundew Technologies Llc Vorrichtung und verfahren zur steuerung des dampfdrucks einer chemikalienquelle
WO2005007283A2 (en) 2003-07-08 2005-01-27 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US20050098107A1 (en) 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US20070137794A1 (en) 2003-09-24 2007-06-21 Aviza Technology, Inc. Thermal processing system with across-flow liner
US7156380B2 (en) 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US6982046B2 (en) 2003-10-01 2006-01-03 General Electric Company Light sources with nanometer-sized VUV radiation-absorbing phosphors
US20050101843A1 (en) 2003-11-06 2005-05-12 Welch Allyn, Inc. Wireless disposable physiological sensor
TW200527513A (en) * 2003-11-20 2005-08-16 Hitachi Int Electric Inc Method for manufacturing semiconductor device and substrate processing apparatus
JP2005172489A (ja) 2003-12-09 2005-06-30 Tokyo Yogyo Co Ltd 溶湯用測温プローブ
KR100519798B1 (ko) 2003-12-11 2005-10-10 삼성전자주식회사 향상된 생산성을 갖는 박막 형성 방법
KR100593960B1 (ko) 2004-01-09 2006-06-30 병호 최 광원자층 증착장치 및 증착방법
WO2005086331A2 (en) 2004-03-02 2005-09-15 Rosemount, Inc. Process device with improved power generation
US20050233477A1 (en) 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
CN100373545C (zh) 2004-03-05 2008-03-05 东京毅力科创株式会社 基板处理装置、基板处理方法及程序
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US6982208B2 (en) 2004-05-03 2006-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for producing high throughput strained-Si channel MOSFETS
KR100469132B1 (ko) 2004-05-18 2005-01-29 주식회사 아이피에스 주기적 펄스 두 단계 플라즈마 원자층 증착장치 및 방법
US7622005B2 (en) 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
US7244958B2 (en) 2004-06-24 2007-07-17 International Business Machines Corporation Integration of strained Ge into advanced CMOS technology
US7073834B2 (en) 2004-06-25 2006-07-11 Applied Materials, Inc. Multiple section end effector assembly
US7363195B2 (en) 2004-07-07 2008-04-22 Sensarray Corporation Methods of configuring a sensor network
US7409263B2 (en) 2004-07-14 2008-08-05 Applied Materials, Inc. Methods and apparatus for repositioning support for a substrate carrier
US7689687B2 (en) 2004-07-30 2010-03-30 Fisher-Rosemount Systems, Inc. Communication controller with automatic time stamping
KR101114219B1 (ko) 2004-08-09 2012-03-05 주성엔지니어링(주) 광원을 포함하는 원자층 증착장치 및 이를 이용한 증착방법
JP2006059931A (ja) 2004-08-18 2006-03-02 Canon Anelva Corp 急速加熱処理装置
US20060040054A1 (en) 2004-08-18 2006-02-23 Pearlstein Ronald M Passivating ALD reactor chamber internal surfaces to prevent residue buildup
JP4698190B2 (ja) 2004-09-22 2011-06-08 川惣電機工業株式会社 測温装置
US7806587B2 (en) 2004-09-29 2010-10-05 Citizen Holdings Co., Ltd. Electronic clinical thermometer and method of producing the same
JP2006153706A (ja) 2004-11-30 2006-06-15 Taiyo Nippon Sanso Corp 測温体および気相成長装置
US7368377B2 (en) 2004-12-09 2008-05-06 Interuniversitair Microelektronica Centrum (Imec) Vzw Method for selective deposition of a thin self-assembled monolayer
US20060156981A1 (en) 2005-01-18 2006-07-20 Kyle Fondurulia Wafer support pin assembly
KR100699861B1 (ko) * 2005-01-19 2007-03-27 삼성전자주식회사 4-웨이밸브를 포함하는 반도체소자 제조장치, 반도체소자제조장치의 밸브 제어방법 및 이를 이용한 반도체소자의제조방법
US20060156980A1 (en) 2005-01-19 2006-07-20 Samsung Electronics Co., Ltd. Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
JP2006203120A (ja) 2005-01-24 2006-08-03 Toshiba Corp 半導体装置の製造方法
KR100585178B1 (ko) 2005-02-05 2006-05-30 삼성전자주식회사 금속 게이트 전극을 가지는 ＦｉｎＦＥＴ을 포함하는반도체 소자 및 그 제조방법
US7410340B2 (en) 2005-02-24 2008-08-12 Asyst Technologies, Inc. Direct tool loading
JP4214124B2 (ja) 2005-03-14 2009-01-28 株式会社バイオエコーネット 耳式体温計
US7376520B2 (en) 2005-03-16 2008-05-20 Lam Research Corporation System and method for gas flow verification
US8974868B2 (en) 2005-03-21 2015-03-10 Tokyo Electron Limited Post deposition plasma cleaning system and method
US20060211259A1 (en) 2005-03-21 2006-09-21 Maes Jan W Silicon oxide cap over high dielectric constant films
KR100655431B1 (ko) 2005-03-23 2006-12-11 삼성전자주식회사 웨이퍼와의 접촉 면적을 최소화할 수 있는 웨이퍼 캐리어 및 이를 이용한 웨이퍼 세정방법
US7351057B2 (en) 2005-04-27 2008-04-01 Asm International N.V. Door plate for furnace
US7169018B2 (en) 2005-05-04 2007-01-30 Micrel, Incorporated Wafer carrier checker and method of using same
US20060269690A1 (en) 2005-05-27 2006-11-30 Asm Japan K.K. Formation technology for nanoparticle films having low dielectric constant
US20060275933A1 (en) 2005-06-02 2006-12-07 Applied Materials, Inc. Thermally conductive ceramic tipped contact thermocouple
US20070003204A1 (en) * 2005-06-30 2007-01-04 Elli Makrides-Saravanos Methods and apparatus for splitter modules and splitter module housings
TW200702647A (en) 2005-07-13 2007-01-16 Actherm Inc Heat conductive structure of electronic clinical thermometer and clinical thermometer with the same
WO2007015436A1 (ja) 2005-08-04 2007-02-08 Tosoh Corporation 金属含有化合物、その製造方法、金属含有薄膜及びその形成方法
JP4666215B2 (ja) 2005-08-10 2011-04-06 株式会社ダイフク 物品搬送装置
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
JP5017950B2 (ja) 2005-09-21 2012-09-05 株式会社Ｓｕｍｃｏ エピタキシャル成長装置の温度管理方法
US7578616B2 (en) 2005-09-22 2009-08-25 Lam Research Corporation Apparatus for determining a temperature of a substrate and methods therefor
TWI331770B (en) 2005-11-04 2010-10-11 Applied Materials Inc Apparatus for plasma-enhanced atomic layer deposition
US7561982B2 (en) 2005-11-10 2009-07-14 Shake Awake Products, LLC Physical attribute recording method and system
JP5097554B2 (ja) 2005-11-18 2012-12-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US7912439B2 (en) 2005-11-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
US7857506B2 (en) 2005-12-05 2010-12-28 Sencal Llc Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications
US7963917B2 (en) 2005-12-05 2011-06-21 Echo Therapeutics, Inc. System and method for continuous non-invasive glucose monitoring
TWM292692U (en) 2005-12-29 2006-06-21 Powerchip Semiconductor Corp Thermocouple apparatus
JP5324026B2 (ja) 2006-01-18 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の制御方法
US7736437B2 (en) 2006-02-03 2010-06-15 Integrated Materials, Incorporated Baffled liner cover
US7354849B2 (en) 2006-02-28 2008-04-08 Intel Corporation Catalytically enhanced atomic layer deposition process
US8501599B2 (en) 2006-03-07 2013-08-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus and substrate processing method
KR101233632B1 (ko) 2006-03-07 2013-02-15 씨케이디 가부시키 가이샤 가스유량 검정유닛
US7692171B2 (en) 2006-03-17 2010-04-06 Andrzei Kaszuba Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors
US7456429B2 (en) 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US7753584B2 (en) 2006-03-31 2010-07-13 Mesoscribe Technologies, Inc. Thermocouples
US7902074B2 (en) 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
US7547633B2 (en) 2006-05-01 2009-06-16 Applied Materials, Inc. UV assisted thermal processing
US7997795B2 (en) 2006-05-02 2011-08-16 Watlow Electric Manufacturing Company Temperature sensors and methods of manufacture thereof
US20070266945A1 (en) 2006-05-16 2007-11-22 Asm Japan K.K. Plasma cvd apparatus equipped with plasma blocking insulation plate
CN101733058B (zh) 2006-05-26 2014-10-22 英尼奥斯制造业比利时有限公司 用于聚合的环流型反应器
US7623940B2 (en) 2006-06-02 2009-11-24 The Boeing Company Direct-manufactured duct interconnects
US7494272B2 (en) 2006-06-27 2009-02-24 Applied Materials, Inc. Dynamic surface annealing using addressable laser array with pyrometry feedback
JP5027573B2 (ja) 2006-07-06 2012-09-19 株式会社小松製作所 温度センサおよび温調装置
WO2008008737A2 (en) 2006-07-10 2008-01-17 Asyst Technologies, Inc. Variable lot size load port
US7795160B2 (en) 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
JP2008041734A (ja) 2006-08-02 2008-02-21 Sony Corp 半導体装置および半導体装置の製造方法
US8080282B2 (en) 2006-08-08 2011-12-20 Asm Japan K.K. Method for forming silicon carbide film containing oxygen
JP4904995B2 (ja) 2006-08-28 2012-03-28 シンフォニアテクノロジー株式会社 ロードポート装置
DE502007004378D1 (de) 2006-09-06 2010-08-26 Kistler Holding Ag Temperatursensor mit bearbeitbarer Front
US7740437B2 (en) 2006-09-22 2010-06-22 Asm International N.V. Processing system with increased cassette storage capacity
JP4814038B2 (ja) 2006-09-25 2011-11-09 株式会社日立国際電気 基板処理装置および反応容器の着脱方法
USD634329S1 (en) 2006-09-26 2011-03-15 Margareta Wastrom Computer platform with forearm support
TW200822253A (en) 2006-10-02 2008-05-16 Matsushita Electric Ind Co Ltd Component crimping apparatus control method, component crimping apparatus, and measuring tool
CN101522943B (zh) 2006-10-10 2013-04-24 Asm美国公司 前体输送系统
US20080118334A1 (en) 2006-11-22 2008-05-22 Bonora Anthony C Variable pitch storage shelves
US20080132046A1 (en) 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20080202689A1 (en) 2006-12-08 2008-08-28 Tes Co., Ltd. Plasma processing apparatus
ATE516127T1 (de) 2006-12-19 2011-07-15 Koninkl Philips Electronics Nv System und verfahren zum erwärmen von objekten in einer produktionslinie
US8178436B2 (en) 2006-12-21 2012-05-15 Intel Corporation Adhesion and electromigration performance at an interface between a dielectric and metal
JP5108489B2 (ja) 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP4270284B2 (ja) 2007-01-30 2009-05-27 トヨタ自動車株式会社 車輪状態監視システムおよび車輪状態検出装置
DE102007004867B4 (de) 2007-01-31 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid
USD576001S1 (en) 2007-02-16 2008-09-02 Brenda Brunderman Faux brick tool
US7871198B2 (en) 2007-02-26 2011-01-18 Battelle Energy Alliance, Llc High-temperature thermocouples and related methods
US7621672B2 (en) 2007-03-19 2009-11-24 Babcock & Wilcox Technical Services Y-12, Llc Thermocouple shield
US20080241387A1 (en) 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
US7651961B2 (en) 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
JP4853374B2 (ja) 2007-04-27 2012-01-11 東京エレクトロン株式会社 塗布、現像装置及びその方法並びに記憶媒体
US8110099B2 (en) 2007-05-09 2012-02-07 Contech Stormwater Solutions Inc. Stormwater filter assembly
GB0709723D0 (en) 2007-05-22 2007-06-27 Goodrich Control Sys Ltd Temperature sensing
US7874726B2 (en) 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US20090017631A1 (en) 2007-06-01 2009-01-15 Bencher Christopher D Self-aligned pillar patterning using multiple spacer masks
US8084352B2 (en) 2007-06-04 2011-12-27 Panasonic Corporation Method of manufacturing semiconductor device
US7781352B2 (en) 2007-06-06 2010-08-24 Asm Japan K.K. Method for forming inorganic silazane-based dielectric film
US7955650B2 (en) 2007-06-07 2011-06-07 Asm Japan K.K. Method for forming dielectric film using porogen gas
JP4589984B2 (ja) 2007-06-08 2010-12-01 東京エレクトロン株式会社 微細パターンの形成方法
CN100590804C (zh) 2007-06-22 2010-02-17 中芯国际集成电路制造(上海)有限公司 原子层沉积方法以及形成的半导体器件
US7651269B2 (en) 2007-07-19 2010-01-26 Lam Research Corporation Temperature probes having a thermally isolated tip
JP2009044023A (ja) 2007-08-10 2009-02-26 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
US20090052498A1 (en) 2007-08-24 2009-02-26 Asm America, Inc. Thermocouple
JP2009076881A (ja) 2007-08-30 2009-04-09 Tokyo Electron Ltd 処理ガス供給システム及び処理装置
WO2009028619A1 (ja) 2007-08-30 2009-03-05 Tokyo Electron Limited 処理ガス供給システム及び処理装置
JP2009088421A (ja) 2007-10-03 2009-04-23 Renesas Technology Corp 半導体装置の製造方法
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
JP4730369B2 (ja) 2007-10-30 2011-07-20 株式会社デンソー ナビゲーションシステム
KR101369907B1 (ko) 2007-10-31 2014-03-04 주성엔지니어링(주) 트랜지스터 및 그 제조 방법
US20090124131A1 (en) 2007-11-09 2009-05-14 Electronic Controls Design Thermocouple adapter
US20090122458A1 (en) 2007-11-14 2009-05-14 Varian Semiconductor Epuipment Associated, Inc. Embossed electrostatic chuck
EP2065927B1 (en) 2007-11-27 2013-10-02 Imec Integration and manufacturing method of Cu germanide and Cu silicide as Cu capping layer
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US7807566B2 (en) 2007-12-07 2010-10-05 Asm Japan K.K. Method for forming dielectric SiOCH film having chemical stability
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US7993057B2 (en) 2007-12-20 2011-08-09 Asm America, Inc. Redundant temperature sensor for semiconductor processing chambers
US8496377B2 (en) 2007-12-31 2013-07-30 Covidien Lp Thermometer having molded probe component
US8198567B2 (en) 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
US20090186571A1 (en) 2008-01-22 2009-07-23 Asm America, Inc. Air ventilation system
KR101043211B1 (ko) 2008-02-12 2011-06-22 신웅철 배치형 원자층 증착 장치
JP2009194248A (ja) 2008-02-15 2009-08-27 Tokyo Electron Ltd パターン形成方法、半導体製造装置及び記憶媒体
US7695619B2 (en) 2008-03-21 2010-04-13 Pentair Filtration, Inc. Modular drinking water filtration system with adapter rings for replaceable cartridges to assure proper fit
EP2272068B1 (en) 2008-04-28 2018-07-04 Basf Se Low-k dielectrics obtainable by twin polymerization
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
KR101802124B1 (ko) 2008-06-05 2017-11-27 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 란탄족 함유 전구체의 제조 및 란탄족 함유 필름의 증착 방법
US7915667B2 (en) 2008-06-11 2011-03-29 Qimonda Ag Integrated circuits having a contact region and methods for manufacturing the same
US20090308315A1 (en) 2008-06-13 2009-12-17 Asm International N.V. Semiconductor processing apparatus with improved thermal characteristics and method for providing the same
US7946762B2 (en) 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
GB2461938A (en) * 2008-07-08 2010-01-27 Clearview Media Ltd Personal safety alarm system
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
USD600223S1 (en) 2008-08-07 2009-09-15 Ravinder Aggarwal Susceptor ring
US8328585B2 (en) 2008-08-07 2012-12-11 Texas Instruments Incorporated Modulated deposition process for stress control in thick TiN films
JP5338335B2 (ja) 2008-08-13 2013-11-13 東京エレクトロン株式会社 搬送容器の開閉装置及びプローブ装置
JP5593472B2 (ja) 2008-08-27 2014-09-24 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法
JP5188326B2 (ja) 2008-08-28 2013-04-24 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、及び基板処理装置
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US20100075037A1 (en) * 2008-09-22 2010-03-25 Marsh Eugene P Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods
JP4638550B2 (ja) 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
US7967913B2 (en) 2008-10-22 2011-06-28 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
US8185443B2 (en) 2008-10-27 2012-05-22 Ebay, Inc. Method and apparatus for authorizing a payment via a remote device
US8262287B2 (en) 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
US8816424B2 (en) 2008-12-26 2014-08-26 SK Hynix Inc. Nonvolatile memory device
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
JP5275094B2 (ja) 2009-03-13 2013-08-28 東京エレクトロン株式会社 基板処理方法
US8118484B2 (en) 2009-03-31 2012-02-21 Rosemount Inc. Thermocouple temperature sensor with connection detection circuitry
US8197915B2 (en) 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8100583B2 (en) 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
CN102428544B (zh) 2009-05-20 2014-10-29 株式会社东芝 凹凸图案形成方法
JP5456036B2 (ja) 2009-06-12 2014-03-26 株式会社東芝 不揮発性半導体記憶装置
JP5504793B2 (ja) 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
TW201131005A (en) 2009-09-29 2011-09-16 Tokyo Electron Ltd Process for production of ni film
JP5467007B2 (ja) 2009-09-30 2014-04-09 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
WO2011056519A2 (en) 2009-10-26 2011-05-12 Asm International N.V. Synthesis and use of precursors for ald of group va element containing thin films
USD651291S1 (en) 2010-01-24 2011-12-27 Glv International (1995) Ltd. Duct connector ring
CN102763199B (zh) 2010-02-12 2016-01-20 应用材料公司 处理腔室之气流改良
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
CZ303655B6 (cs) 2010-04-16 2013-01-30 Skutchanová@Zuzana Zpusob výroby brousicího povrchu skleneného kosmetického prípravku
US8637390B2 (en) 2010-06-04 2014-01-28 Applied Materials, Inc. Metal gate structures and methods for forming thereof
WO2012011423A1 (ja) 2010-07-22 2012-01-26 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP5490753B2 (ja) 2010-07-29 2014-05-14 東京エレクトロン株式会社 トレンチの埋め込み方法および成膜システム
JP2012038819A (ja) 2010-08-04 2012-02-23 Sanyo Electric Co Ltd 半導体レーザ装置および光装置
US8945305B2 (en) 2010-08-31 2015-02-03 Micron Technology, Inc. Methods of selectively forming a material using parylene coating
JP2012080095A (ja) 2010-09-10 2012-04-19 Elpida Memory Inc 半導体装置及びその製造方法
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8722548B2 (en) 2010-09-24 2014-05-13 International Business Machines Corporation Structures and techniques for atomic layer deposition
FR2965888B1 (fr) * 2010-10-08 2012-12-28 Alcatel Lucent Canalisation d'evacuation de gaz et procede d'evacuation associe
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
JP5722595B2 (ja) 2010-11-11 2015-05-20 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
KR20140015280A (ko) 2010-11-22 2014-02-06 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 잉크, 피막, 코팅된 기재 및 제조방법
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
US8398773B2 (en) 2011-01-21 2013-03-19 Asm International N.V. Thermal processing furnace and liner for the same
JP2012195562A (ja) 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法
US9684234B2 (en) 2011-03-24 2017-06-20 Uchicago Argonne, Llc Sequential infiltration synthesis for enhancing multiple-patterning lithography
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
JP2013012719A (ja) 2011-05-31 2013-01-17 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
US9136180B2 (en) 2011-06-01 2015-09-15 Asm Ip Holding B.V. Process for depositing electrode with high effective work function
KR101995602B1 (ko) 2011-06-03 2019-07-02 노벨러스 시스템즈, 인코포레이티드 상호접속을 위한 캡핑층들을 함유하는 금속 및 실리콘
US10707082B2 (en) 2011-07-06 2020-07-07 Asm International N.V. Methods for depositing thin films comprising indium nitride by atomic layer deposition
US9018567B2 (en) 2011-07-13 2015-04-28 Asm International N.V. Wafer processing apparatus with heated, rotating substrate support
US9630127B2 (en) 2011-07-19 2017-04-25 Hayward Industries, Inc. Filter vessel assembly and related methods of use
US8716072B2 (en) 2011-07-25 2014-05-06 International Business Machines Corporation Hybrid CMOS technology with nanowire devices and double gated planar devices
US20130025786A1 (en) 2011-07-28 2013-01-31 Vladislav Davidkovich Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes
CN102931083B (zh) 2011-08-10 2015-07-29 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
JP2013062361A (ja) 2011-09-13 2013-04-04 Tokyo Electron Ltd 熱処理装置、温度制御システム、熱処理方法、温度制御方法及びその熱処理方法又はその温度制御方法を実行させるためのプログラムを記録した記録媒体
JP6042656B2 (ja) 2011-09-30 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
USD695240S1 (en) 2011-10-20 2013-12-10 Tokyo Electron Limited Arm for wafer transportation for manufacturing semiconductor
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
JP5694129B2 (ja) 2011-11-29 2015-04-01 株式会社東芝 半導体装置及びその製造方法
KR101720117B1 (ko) 2011-12-14 2017-03-27 인텔 코포레이션 복수의 금속 산화물층들을 구비한 절연체 스택을 갖는 금속―절연체―금속（ｍｉｍ）커패시터
JP5679581B2 (ja) 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
USD698904S1 (en) 2012-02-08 2014-02-04 Asm Ip Holding B.V. Vacuum flange ring
US11626279B2 (en) 2012-03-09 2023-04-11 Versum Materials Us, Llc Compositions and methods for making silicon containing films
US9460912B2 (en) 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
US20130288485A1 (en) 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US20150099065A1 (en) 2012-06-07 2015-04-09 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
USD723330S1 (en) 2012-06-11 2015-03-03 Barry Dean York Debris mask and basin
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
TWD157605S (zh) 2012-07-04 2013-12-01 中磊電子股份有限公司 做為微型基地台的多模組化組合之通訊裝置
US9514932B2 (en) 2012-08-08 2016-12-06 Applied Materials, Inc. Flowable carbon for semiconductor processing
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
JP5882167B2 (ja) 2012-09-13 2016-03-09 東京エレクトロン株式会社 熱処理装置
CA2895670A1 (en) 2012-09-19 2014-03-27 Apjet, Inc. Atmospheric-pressure plasma processing apparatus and method
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
WO2014083400A1 (en) 2012-11-27 2014-06-05 Soitec Deposition systems having interchangeable gas injectors and related methods
US9064857B2 (en) 2012-12-19 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. N metal for FinFET
KR20140089793A (ko) 2013-01-07 2014-07-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
USD743357S1 (en) 2013-03-01 2015-11-17 Asm Ip Holding B.V. Susceptor
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US8984962B2 (en) 2013-03-15 2015-03-24 H. Aaron Christmann Rotatable torque-measuring apparatus and method
US9142437B2 (en) 2013-04-10 2015-09-22 Globalfoundries Inc. System for separately handling different size FOUPs
US8900467B1 (en) 2013-05-25 2014-12-02 HGST Netherlands B.V. Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
SG11201510292VA (en) 2013-07-02 2016-01-28 Ultratech Inc Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
US8986562B2 (en) 2013-08-07 2015-03-24 Ultratech, Inc. Methods of laser processing photoresist in a gaseous environment
US9484199B2 (en) 2013-09-06 2016-11-01 Applied Materials, Inc. PECVD microcrystalline silicon germanium (SiGe)
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9034717B2 (en) 2013-10-16 2015-05-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor-on-insulator structure and method of fabricating the same
KR20150061179A (ko) 2013-11-26 2015-06-04 에스케이하이닉스 주식회사 플라즈마 강화 기상 증착
US9362385B2 (en) 2013-12-18 2016-06-07 Taiwan Semiconductor Manufacturing Company Ltd. Method for tuning threshold voltage of semiconductor device with metal gate structure
EP3084033B1 (en) 2013-12-18 2023-05-10 IMEC vzw Method of producing transition metal dichalcogenide layer and materials
KR20150073251A (ko) 2013-12-20 2015-07-01 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
USD724701S1 (en) 2014-02-04 2015-03-17 ASM IP Holding, B.V. Shower plate
US8993457B1 (en) 2014-02-06 2015-03-31 Cypress Semiconductor Corporation Method of fabricating a charge-trapping gate stack using a CMOS process flow
US9416447B2 (en) 2014-02-07 2016-08-16 HGST Netherlands B.V. Method for line density multiplication using block copolymers and sequential infiltration synthesis
KR20150104817A (ko) 2014-03-06 2015-09-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
JP2015173230A (ja) 2014-03-12 2015-10-01 株式会社東芝 半導体装置及び半導体装置の製造方法
US9299557B2 (en) 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
JP6275822B2 (ja) 2014-03-20 2018-02-07 株式会社東芝 非水電解質電池用活物質、非水電解質電池用電極、非水電解質二次電池、電池パック及び非水電解質電池用活物質の製造方法
JP6270575B2 (ja) 2014-03-24 2018-01-31 株式会社日立国際電気 反応管、基板処理装置及び半導体装置の製造方法
KR102094470B1 (ko) 2014-04-08 2020-03-27 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9343343B2 (en) 2014-05-19 2016-05-17 Asm Ip Holding B.V. Method for reducing particle generation at bevel portion of substrate
US9257557B2 (en) 2014-05-20 2016-02-09 Globalfoundries Inc. Semiconductor structure with self-aligned wells and multiple channel materials
US9577192B2 (en) 2014-05-21 2017-02-21 Sony Semiconductor Solutions Corporation Method for forming a metal cap in a semiconductor memory device
US20150348755A1 (en) 2014-05-29 2015-12-03 Charm Engineering Co., Ltd. Gas distribution apparatus and substrate processing apparatus including same
US20150380296A1 (en) 2014-06-25 2015-12-31 Lam Research Corporation Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications
US9825191B2 (en) 2014-06-27 2017-11-21 Sunpower Corporation Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
USD742202S1 (en) 2014-09-11 2015-11-03 Thomas Jason Cyphers Sign frame key
US9576792B2 (en) 2014-09-17 2017-02-21 Asm Ip Holding B.V. Deposition of SiN
JP6257000B2 (ja) 2014-09-30 2018-01-10 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および反応管
ES2703911T3 (es) 2014-10-13 2019-03-13 Heraeus Deutschland Gmbh & Co Kg Pintura de color cobre
US9530787B2 (en) 2014-10-20 2016-12-27 Sandisk Technologies Llc Batch contacts for multiple electrically conductive layers
JP6086892B2 (ja) 2014-11-25 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9837281B2 (en) 2014-11-26 2017-12-05 Asm Ip Holding B.V. Cyclic doped aluminum nitride deposition
US20160168699A1 (en) 2014-12-12 2016-06-16 Asm Ip Holding B.V. Method for depositing metal-containing film using particle-reduction step
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
USD753269S1 (en) 2015-01-09 2016-04-05 Asm Ip Holding B.V. Top plate
US10228291B2 (en) 2015-02-25 2019-03-12 Kokusai Electric Corporation Substrate processing apparatus, and thermocouple
JP6458595B2 (ja) 2015-03-27 2019-01-30 東京エレクトロン株式会社 成膜装置及び成膜方法並びに記憶媒体
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US11384432B2 (en) 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US10935889B2 (en) 2015-05-13 2021-03-02 Tokyo Electron Limited Extreme ultra-violet sensitivity reduction using shrink and growth method
JP1547057S (zh) 2015-05-28 2016-04-04
JP1545222S (zh) 2015-06-10 2016-03-07
US9646883B2 (en) 2015-06-12 2017-05-09 International Business Machines Corporation Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
JP6578243B2 (ja) 2015-07-17 2019-09-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
JP6560924B2 (ja) 2015-07-29 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
WO2017018834A1 (ko) 2015-07-29 2017-02-02 한국표준과학연구원 2차원 전이금속 디칼코지나이드 박막의 제조 방법
KR102420087B1 (ko) 2015-07-31 2022-07-12 삼성전자주식회사 반도체 소자의 제조 방법
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US10410857B2 (en) 2015-08-24 2019-09-10 Asm Ip Holding B.V. Formation of SiN thin films
JP1546345S (zh) 2015-09-04 2016-03-22
JP6448502B2 (ja) 2015-09-09 2019-01-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
KR102395997B1 (ko) 2015-09-30 2022-05-10 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
JP6464990B2 (ja) 2015-10-21 2019-02-06 東京エレクトロン株式会社 縦型熱処理装置
KR102424720B1 (ko) 2015-10-22 2022-07-25 삼성전자주식회사 수직형 메모리 장치 및 이의 제조 방법
USD787458S1 (en) 2015-11-18 2017-05-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
CH711990A2 (de) 2015-12-22 2017-06-30 Interglass Tech Ag Vakuumbeschichtungsanlage zum Beschichten von Linsen.
TWD178424S (zh) 2016-01-08 2016-09-21 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的氣流控制板
TWD178698S (zh) 2016-01-08 2016-10-01 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的反應器外壁
TWD178425S (zh) 2016-01-08 2016-09-21 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的電極板
JP6538582B2 (ja) 2016-02-15 2019-07-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9748145B1 (en) 2016-02-29 2017-08-29 Globalfoundries Inc. Semiconductor devices with varying threshold voltage and fabrication methods thereof
TWI722132B (zh) 2016-03-13 2021-03-21 美商應用材料股份有限公司 用於間隔墊應用之氮化矽薄膜的選擇性沉積
KR20170107323A (ko) 2016-03-15 2017-09-25 연세대학교 산학협력단 전이금속 칼코겐 화합물 합금 및 그의 제조방법
US10134672B2 (en) 2016-03-15 2018-11-20 Toshiba Memory Corporation Semiconductor memory device having a stepped structure and contact wirings formed thereon
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
JP6566904B2 (ja) 2016-03-29 2019-08-28 東京エレクトロン株式会社 基板処理装置
JP6095825B2 (ja) 2016-04-08 2017-03-15 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
KR102326377B1 (ko) 2016-06-07 2021-11-15 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
USD785766S1 (en) 2016-06-15 2017-05-02 Asm Ip Holding B.V. Shower plate
JP6695975B2 (ja) 2016-07-05 2020-05-20 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、ガスノズルおよび半導体装置の製造方法
JP6616258B2 (ja) 2016-07-26 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、蓋部カバーおよび半導体装置の製造方法
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
JP6710130B2 (ja) 2016-09-13 2020-06-17 東京エレクトロン株式会社 基板処理装置
JP6710134B2 (ja) 2016-09-27 2020-06-17 東京エレクトロン株式会社 ガス導入機構及び処理装置
JP6550029B2 (ja) 2016-09-28 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、ノズル基部および半導体装置の製造方法
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
JP6737139B2 (ja) 2016-11-14 2020-08-05 東京エレクトロン株式会社 ガスインジェクタ、及び縦型熱処理装置
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR102147174B1 (ko) 2016-11-18 2020-08-28 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반응관 구조 및 반도체 장치의 제조 방법
JP6804270B2 (ja) 2016-11-21 2020-12-23 東京エレクトロン株式会社 基板処理装置、および基板処理方法
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
JP2020502790A (ja) 2016-12-15 2020-01-23 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ 半導体処理装置
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10049426B2 (en) 2017-01-03 2018-08-14 Qualcomm Incorporated Draw call visibility stream
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus

Also Published As

Publication number Publication date
CN107785221A (zh) 2018-03-09
TW201807739A (zh) 2018-03-01
KR102613349B1 (ko) 2023-12-14
KR20180023298A (ko) 2018-03-07
TWI672729B (zh) 2019-09-21
US20180057937A1 (en) 2018-03-01
US10364493B2 (en) 2019-07-30

Similar Documents

Publication Publication Date Title
CN107785221B (zh) 排气设备和使用其的衬底处理设备
CN110453196B (zh) 薄膜形成方法及衬底处理装置
US7918938B2 (en) High temperature ALD inlet manifold
KR100332313B1 (ko) Ａｌｄ 박막증착장치 및 증착방법
FI117978B (fi) Menetelmä ja laitteisto ohutkalvon kasvattamiseksi alustalle
KR102411152B1 (ko) Ald 장치, 방법 및 밸브
TW576874B (en) Method of growing a thin film onto a substrate
KR19990085442A (ko) 연속기체분사에 의한 반도체 박막증착장치
JP2001517767A (ja) 統合されたポンプ・パージの付いたモジュール式流体フロー・システム
KR20200110464A (ko) Ald 코팅에 의한 목표 펌프의 내부 보호
KR20050033841A (ko) 반도체 제조 장치 및 반도체 제조 방법
KR100706243B1 (ko) 질화 텅스텐 증착 장치 및 증착 방법
KR20050030235A (ko) 저증기압 화학 물질용의 퍼지 가능한 컨테이너
US20070193637A1 (en) Systems and methods for controlling fluid flow
KR20190072266A (ko) 소스 가스 공급 장치 및 이를 구비하는 증착 장치
JP2010161150A (ja) ガス排気ライン切り換え機構およびガス排気ライン切り換え方法
KR20040079469A (ko) 소스 가스 공급 장치
KR20240077733A (ko) 기판 처리 장치
KR100924763B1 (ko) 케미컬 공급장치
KR100481794B1 (ko) 에이엘디 프로세스 모듈의 가스공급시스템
JP2023088875A (ja) ヒーターを有する半導体処理装置
KR20040104040A (ko) 화학기상증착 장치의 배기시스템
JPH04271117A (ja) 化学気相成長装置
KR20060073835A (ko) 다원화된 가스 유량계를 갖는 저압화학기상증착 장치
KR20080060491A (ko) 전자소재 제조용 가스공급장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant