CN103199017B - 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法 - Google Patents

形成掩埋导电层方法、材料厚度控制法、形成晶体管方法 Download PDF

Info

Publication number
CN103199017B
CN103199017B CN201310060514.1A CN201310060514A CN103199017B CN 103199017 B CN103199017 B CN 103199017B CN 201310060514 A CN201310060514 A CN 201310060514A CN 103199017 B CN103199017 B CN 103199017B
Authority
CN
China
Prior art keywords
groove
layer
grid
trench
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310060514.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN103199017A (zh
Inventor
阿肖克·沙拉
艾伦·埃尔班霍威
克里斯托弗·B·科康
史蒂文·P·萨普
彼得·H·威尔逊
巴巴克·S·萨尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of CN103199017A publication Critical patent/CN103199017A/zh
Application granted granted Critical
Publication of CN103199017B publication Critical patent/CN103199017B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
CN201310060514.1A 2003-12-30 2004-12-28 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法 Expired - Fee Related CN103199017B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US53379003P 2003-12-30 2003-12-30
US60/533,790 2003-12-30
US58884504P 2004-07-15 2004-07-15
US60/588,845 2004-07-15

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2004800421611A Division CN101180737B (zh) 2003-12-30 2004-12-29 功率半导体器件及制造方法

Publications (2)

Publication Number Publication Date
CN103199017A CN103199017A (zh) 2013-07-10
CN103199017B true CN103199017B (zh) 2016-08-03

Family

ID=34753010

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201310060514.1A Expired - Fee Related CN103199017B (zh) 2003-12-30 2004-12-28 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法
CN2010101386294A Expired - Fee Related CN101794817B (zh) 2003-12-30 2004-12-29 功率半导体器件及制造方法
CN2004800421611A Expired - Fee Related CN101180737B (zh) 2003-12-30 2004-12-29 功率半导体器件及制造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2010101386294A Expired - Fee Related CN101794817B (zh) 2003-12-30 2004-12-29 功率半导体器件及制造方法
CN2004800421611A Expired - Fee Related CN101180737B (zh) 2003-12-30 2004-12-29 功率半导体器件及制造方法

Country Status (6)

Country Link
JP (3) JP4903055B2 (ja)
KR (2) KR20070032627A (ja)
CN (3) CN103199017B (ja)
DE (3) DE202004021352U1 (ja)
TW (3) TWI521726B (ja)
WO (1) WO2005065385A2 (ja)

Families Citing this family (299)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838722B2 (en) 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP4903055B2 (ja) * 2003-12-30 2012-03-21 フェアチャイルド・セミコンダクター・コーポレーション パワー半導体デバイスおよびその製造方法
US7183610B2 (en) * 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
JP5135663B2 (ja) * 2004-10-21 2013-02-06 富士電機株式会社 半導体装置およびその製造方法
US7453119B2 (en) * 2005-02-11 2008-11-18 Alphs & Omega Semiconductor, Ltd. Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
JP4955222B2 (ja) * 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN101536163B (zh) * 2005-06-10 2013-03-06 飞兆半导体公司 电荷平衡场效应晶体管
JP4921730B2 (ja) * 2005-06-20 2012-04-25 株式会社東芝 半導体装置
JP5087542B2 (ja) * 2005-07-27 2012-12-05 インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト ドリフト領域とドリフト制御領域とを有する半導体素子
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
DE102006002065B4 (de) 2006-01-16 2007-11-29 Infineon Technologies Austria Ag Kompensationsbauelement mit reduziertem und einstellbarem Einschaltwiderstand
US7595542B2 (en) * 2006-03-13 2009-09-29 Fairchild Semiconductor Corporation Periphery design for charge balance power devices
US7446374B2 (en) * 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
DE102006026943B4 (de) 2006-06-09 2011-01-05 Infineon Technologies Austria Ag Mittels Feldeffekt steuerbarer Trench-Transistor mit zwei Steuerelektroden
US8432012B2 (en) * 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7544571B2 (en) * 2006-09-20 2009-06-09 Fairchild Semiconductor Corporation Trench gate FET with self-aligned features
JP2008153620A (ja) * 2006-11-21 2008-07-03 Toshiba Corp 半導体装置
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
DE102007020657B4 (de) 2007-04-30 2012-10-04 Infineon Technologies Austria Ag Halbleiterbauelement mit einem Halbleiterkörper und Verfahren zur Herstellung desselben
US20100321363A1 (en) * 2007-06-22 2010-12-23 Panasonic Corporation Plasma display panel driving device and plasma display
JP5285242B2 (ja) * 2007-07-04 2013-09-11 ローム株式会社 半導体装置
KR100847642B1 (ko) * 2007-08-10 2008-07-21 주식회사 동부하이텍 파티클 발생 방지를 위한 포토 키 처리방법
US8497549B2 (en) * 2007-08-21 2013-07-30 Fairchild Semiconductor Corporation Method and structure for shielded gate trench FET
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
ATE515064T1 (de) 2007-10-29 2011-07-15 Nxp Bv Graben-gate-mosfet und verfahren zu dessen herstellung
JP2009164558A (ja) * 2007-12-10 2009-07-23 Toyota Central R&D Labs Inc 半導体装置とその製造方法、並びにトレンチゲートの製造方法
JP5481030B2 (ja) 2008-01-30 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置
US7833862B2 (en) 2008-03-03 2010-11-16 Infineon Technologies Austria Ag Semiconductor device and method for forming same
US7952166B2 (en) 2008-05-22 2011-05-31 Infineon Technologies Austria Ag Semiconductor device with switch electrode and gate electrode and method for switching a semiconductor device
US7786600B2 (en) 2008-06-30 2010-08-31 Hynix Semiconductor Inc. Circuit substrate having circuit wire formed of conductive polarization particles, method of manufacturing the circuit substrate and semiconductor package having the circuit wire
US7936009B2 (en) * 2008-07-09 2011-05-03 Fairchild Semiconductor Corporation Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
US9029854B2 (en) 2008-08-28 2015-05-12 Sunedison Semiconductor Limited (Uen201334164H) Bulk silicon wafer product useful in the manufacture of three dimensional multigate MOSFETs
TWI414019B (zh) * 2008-09-11 2013-11-01 He Jian Technology Suzhou Co Ltd 一種閘氧化層的製造方法
JP5327226B2 (ja) * 2008-10-14 2013-10-30 三菱電機株式会社 パワーデバイス
US7915672B2 (en) * 2008-11-14 2011-03-29 Semiconductor Components Industries, L.L.C. Semiconductor device having trench shield electrode structure
JP5195357B2 (ja) * 2008-12-01 2013-05-08 トヨタ自動車株式会社 半導体装置
US8158456B2 (en) * 2008-12-05 2012-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming stacked dies
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8304829B2 (en) * 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8188484B2 (en) * 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device
JP5588671B2 (ja) 2008-12-25 2014-09-10 ローム株式会社 半導体装置の製造方法
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
WO2010098294A1 (ja) 2009-02-24 2010-09-02 三菱電機株式会社 炭化珪素半導体装置
US7989885B2 (en) * 2009-02-26 2011-08-02 Infineon Technologies Austria Ag Semiconductor device having means for diverting short circuit current arranged in trench and method for producing same
WO2010111825A1 (en) * 2009-03-30 2010-10-07 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Electronic package and method of fabrication thereof
US7952141B2 (en) * 2009-07-24 2011-05-31 Fairchild Semiconductor Corporation Shield contacts in a shielded gate MOSFET
JP4998524B2 (ja) * 2009-07-24 2012-08-15 サンケン電気株式会社 半導体装置
JP5402395B2 (ja) * 2009-08-21 2014-01-29 オムロン株式会社 静電誘導型発電装置
US9443974B2 (en) * 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9425306B2 (en) * 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US8981434B2 (en) 2009-08-31 2015-03-17 Renesas Electronics Corporation Semiconductor device and field effect transistor
CN102024494B (zh) * 2009-09-11 2014-01-08 中芯国际集成电路制造(上海)有限公司 绿色晶体管、电阻随机存储器及其驱动方法
US8273617B2 (en) * 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
CN102790091B (zh) * 2009-10-20 2015-04-01 中芯国际集成电路制造(上海)有限公司 绿色晶体管、纳米硅铁电存储器及其驱动方法
US9425305B2 (en) * 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US8421196B2 (en) 2009-11-25 2013-04-16 Infineon Technologies Austria Ag Semiconductor device and manufacturing method
US8174070B2 (en) * 2009-12-02 2012-05-08 Alpha And Omega Semiconductor Incorporated Dual channel trench LDMOS transistors and BCD process with deep trench isolation
US8198678B2 (en) * 2009-12-09 2012-06-12 Infineon Technologies Austria Ag Semiconductor device with improved on-resistance
CN102130006B (zh) * 2010-01-20 2013-12-18 上海华虹Nec电子有限公司 沟槽型双层栅功率mos晶体管的制备方法
JP5762689B2 (ja) * 2010-02-26 2015-08-12 株式会社東芝 半導体装置
US9577089B2 (en) 2010-03-02 2017-02-21 Vishay-Siliconix Structures and methods of fabricating dual gate devices
TWI407531B (zh) * 2010-03-05 2013-09-01 Great Power Semiconductor Corp 具有蕭特基二極體之功率半導體結構及其製造方法
CN104599966B (zh) * 2010-03-05 2018-02-06 万国半导体股份有限公司 带有沟槽‑氧化物‑纳米管超级结的器件结构及制备方法
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8367501B2 (en) * 2010-03-24 2013-02-05 Alpha & Omega Semiconductor, Inc. Oxide terminated trench MOSFET with three or four masks
TWI419237B (zh) * 2010-04-27 2013-12-11 Great Power Semiconductor Corp 低閘極阻抗之功率半導體結構的製造方法
CN102254944A (zh) * 2010-05-21 2011-11-23 上海新进半导体制造有限公司 一种沟槽mosfet功率整流器件及制造方法
US8319282B2 (en) 2010-07-09 2012-11-27 Infineon Technologies Austria Ag High-voltage bipolar transistor with trench field plate
CN102376758B (zh) * 2010-08-12 2014-02-26 上海华虹宏力半导体制造有限公司 绝缘栅双极晶体管、制作方法及沟槽栅结构制作方法
EP2421046A1 (en) * 2010-08-16 2012-02-22 Nxp B.V. MOSFET having a capacitance control region
CN102386182B (zh) * 2010-08-27 2014-11-05 万国半导体股份有限公司 在分立的功率mos场效应管集成传感场效应管的器件及方法
JP2012060063A (ja) 2010-09-13 2012-03-22 Toshiba Corp 半導体装置及びその製造方法
JP2012064641A (ja) * 2010-09-14 2012-03-29 Toshiba Corp 半導体装置
DE102010043088A1 (de) 2010-10-29 2012-05-03 Robert Bosch Gmbh Halbleiteranordnung mit Schottkydiode
US8580667B2 (en) 2010-12-14 2013-11-12 Alpha And Omega Semiconductor Incorporated Self aligned trench MOSFET with integrated diode
TWI414069B (zh) * 2011-01-05 2013-11-01 Anpec Electronics Corp Power transistor with low interface of low Miller capacitor and its making method
JP5556799B2 (ja) * 2011-01-12 2014-07-23 株式会社デンソー 半導体装置
US8313995B2 (en) * 2011-01-13 2012-11-20 Infineon Technologies Austria Ag Method for manufacturing a semiconductor device
DE102011003456A1 (de) * 2011-02-01 2012-08-02 Robert Bosch Gmbh Halbleiteranordnung mit reduziertem Einschaltwiderstand
JP2012204395A (ja) 2011-03-23 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
JP2012204529A (ja) * 2011-03-24 2012-10-22 Toshiba Corp 半導体装置及びその製造方法
JP2012204636A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
TW201240087A (en) * 2011-03-30 2012-10-01 Anpec Electronics Corp Power device with boundary trench structure
US8823089B2 (en) * 2011-04-15 2014-09-02 Infineon Technologies Ag SiC semiconductor power device
DE112012001986B4 (de) * 2011-05-05 2021-05-27 Abb Schweiz Ag Bipolares Punch-Through-Halbleiterbauelement und Verfahren zur Herstellung eines derartigen Halbleiterbauelements
CN103688363B (zh) 2011-05-18 2017-08-04 威世硅尼克斯公司 半导体器件
US8884340B2 (en) 2011-05-25 2014-11-11 Samsung Electronics Co., Ltd. Semiconductor devices including dual gate electrode structures and related methods
JP5677222B2 (ja) * 2011-07-25 2015-02-25 三菱電機株式会社 炭化珪素半導体装置
CN102916043B (zh) * 2011-08-03 2015-07-22 中国科学院微电子研究所 Mos-hemt器件及其制作方法
US8981748B2 (en) * 2011-08-08 2015-03-17 Semiconductor Components Industries, Llc Method of forming a semiconductor power switching device, structure therefor, and power converter
CN102956640A (zh) * 2011-08-22 2013-03-06 大中积体电路股份有限公司 双导通半导体组件及其制作方法
JP2013058575A (ja) * 2011-09-07 2013-03-28 Toshiba Corp 半導体装置及びその製造方法
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9184255B2 (en) * 2011-09-30 2015-11-10 Infineon Technologies Austria Ag Diode with controllable breakdown voltage
US8659126B2 (en) * 2011-12-07 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit ground shielding structure
JP5742668B2 (ja) * 2011-10-31 2015-07-01 三菱電機株式会社 炭化珪素半導体装置
JP2013115225A (ja) * 2011-11-29 2013-06-10 Toshiba Corp 電力用半導体装置およびその製造方法
KR101275458B1 (ko) * 2011-12-26 2013-06-17 삼성전기주식회사 반도체 소자 및 그 제조 방법
JP5720582B2 (ja) 2012-01-12 2015-05-20 トヨタ自動車株式会社 スイッチング素子
US9082746B2 (en) * 2012-01-16 2015-07-14 Infineon Technologies Austria Ag Method for forming self-aligned trench contacts of semiconductor components and a semiconductor component
JP5848142B2 (ja) * 2012-01-25 2016-01-27 ルネサスエレクトロニクス株式会社 縦型プレーナパワーｍｏｓｆｅｔの製造方法
US9614043B2 (en) * 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
WO2013118437A1 (ja) * 2012-02-10 2013-08-15 パナソニック株式会社 半導体装置及びその製造方法
JP5856868B2 (ja) * 2012-02-17 2016-02-10 国立大学法人九州工業大学 同一基板へのｃｍｏｓ及びトレンチダイオードの作製方法
US9159786B2 (en) * 2012-02-20 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Dual gate lateral MOSFET
US8866222B2 (en) 2012-03-07 2014-10-21 Infineon Technologies Austria Ag Charge compensation semiconductor device
CN103378159B (zh) * 2012-04-20 2016-08-03 英飞凌科技奥地利有限公司 具有mosfet的晶体管装置和制造方法
CN103377922B (zh) * 2012-04-23 2015-12-16 中芯国际集成电路制造(上海)有限公司 一种鳍式场效应晶体管及其形成方法
DE112013002267T5 (de) * 2012-04-30 2015-03-12 Vishay-Siliconix Halbleiterbauelement
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US8884369B2 (en) * 2012-06-01 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical power MOSFET and methods of forming the same
US8680614B2 (en) * 2012-06-12 2014-03-25 Monolithic Power Systems, Inc. Split trench-gate MOSFET with integrated Schottky diode
ITMI20121123A1 (it) * 2012-06-26 2013-12-27 St Microelectronics Srl Transistore mos a gate verticale con accesso ad armatura di campo
US9293376B2 (en) 2012-07-11 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for power MOS transistor
CN104241341A (zh) * 2012-07-27 2014-12-24 俞国庆 一种高频低功耗的功率mos场效应管器件
JP2014027182A (ja) 2012-07-27 2014-02-06 Toshiba Corp 半導体装置
JP5715604B2 (ja) 2012-09-12 2015-05-07 株式会社東芝 電力用半導体素子
US9059256B2 (en) 2012-09-13 2015-06-16 Infineon Technologies Ag Method for producing a controllable semiconductor component
JP5802636B2 (ja) * 2012-09-18 2015-10-28 株式会社東芝 半導体装置およびその製造方法
EP2822039B1 (en) * 2012-10-17 2020-08-26 Fuji Electric Co., Ltd. Semiconductor device
JP2014099484A (ja) * 2012-11-13 2014-05-29 Toshiba Corp 半導体装置
CN103855047B (zh) * 2012-12-04 2016-10-26 上海华虹宏力半导体制造有限公司 深沟槽产品的物理分析结构及方法
US9853140B2 (en) 2012-12-31 2017-12-26 Vishay-Siliconix Adaptive charge balanced MOSFET techniques
CN103011550B (zh) * 2013-01-16 2013-11-13 四川亿思通科技工程有限公司 污泥冻溶脱水处理系统及其处理方法
KR101392587B1 (ko) 2013-02-19 2014-05-27 주식회사 동부하이텍 고전압 정전기 방전 보호 소자
JP6143490B2 (ja) 2013-02-19 2017-06-07 ローム株式会社 半導体装置およびその製造方法
JP6164636B2 (ja) 2013-03-05 2017-07-19 ローム株式会社 半導体装置
JP6164604B2 (ja) * 2013-03-05 2017-07-19 ローム株式会社 半導体装置
KR102011933B1 (ko) * 2013-03-06 2019-08-20 삼성전자 주식회사 비휘발성 메모리 소자 제조 방법
JP2014187141A (ja) 2013-03-22 2014-10-02 Toshiba Corp 半導体装置
JP5784665B2 (ja) 2013-03-22 2015-09-24 株式会社東芝 半導体装置の製造方法
US20140306284A1 (en) * 2013-04-12 2014-10-16 Infineon Technologies Austria Ag Semiconductor Device and Method for Producing the Same
JP2014216572A (ja) 2013-04-26 2014-11-17 株式会社東芝 半導体装置
TWI514578B (zh) * 2013-06-21 2015-12-21 Chip Integration Tech Co Ltd 雙溝渠式整流器及其製造方法
TWI511293B (zh) * 2013-06-24 2015-12-01 Chip Integration Tech Co Ltd 雙溝渠式ｍｏｓ電晶體結構及其製造方法
US9112022B2 (en) * 2013-07-31 2015-08-18 Infineon Technologies Austria Ag Super junction structure having a thickness of first and second semiconductor regions which gradually changes from a transistor area into a termination area
CN104347376B (zh) * 2013-08-05 2017-04-26 台湾茂矽电子股份有限公司 于金属氧化物半导体场效应晶体管中形成遮蔽栅极的方法
KR102036386B1 (ko) * 2013-08-20 2019-10-25 한국전력공사 전기비저항을 이용한 지중 자원 모니터링 방법
JP6197995B2 (ja) * 2013-08-23 2017-09-20 富士電機株式会社 ワイドバンドギャップ絶縁ゲート型半導体装置
JP2015056492A (ja) * 2013-09-11 2015-03-23 株式会社東芝 半導体装置
CN104465603A (zh) 2013-09-23 2015-03-25 台达电子企业管理（上海）有限公司 功率模块
US9525058B2 (en) * 2013-10-30 2016-12-20 Infineon Technologies Austria Ag Integrated circuit and method of manufacturing an integrated circuit
CN104282750B (zh) * 2013-11-20 2017-07-21 沈阳工业大学 主辅栅分立控制u形沟道无掺杂场效应晶体管
CN104282751B (zh) * 2013-11-20 2017-07-21 沈阳工业大学 高集成度高迁移率源漏栅辅控型无结晶体管
CN103887286A (zh) * 2013-11-29 2014-06-25 杭州恩能科技有限公司 一种具有提高抗浪涌电流能力的半导体装置
CN104969356B (zh) * 2014-01-31 2019-10-08 瑞萨电子株式会社 半导体器件
JP6226786B2 (ja) 2014-03-19 2017-11-08 三菱電機株式会社 半導体装置およびその製造方法
KR102156130B1 (ko) * 2014-04-10 2020-09-15 삼성전자주식회사 반도체 소자 형성 방법
DE102014106825B4 (de) 2014-05-14 2019-06-27 Infineon Technologies Ag Halbleitervorrichtung
TWI555208B (zh) * 2014-05-20 2016-10-21 力祥半導體股份有限公司 線型架構之功率半導體元件
CN105097570B (zh) * 2014-05-21 2017-12-19 北大方正集团有限公司 钝化层制造方法及高压半导体功率器件
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
DE112014006764B4 (de) * 2014-06-26 2022-09-01 Mitsubishi Electric Corporation Halbleitervorrichtung
CN105448893B (zh) * 2014-06-30 2017-12-15 苏州远创达科技有限公司 一种半导体器件中的静电放电保护结构及半导体器件
JP6022082B2 (ja) * 2014-07-11 2016-11-09 新電元工業株式会社 半導体装置及び半導体装置の製造方法
DE102014109926A1 (de) * 2014-07-15 2016-01-21 Infineon Technologies Austria Ag Halbleitervorrichtung mit einer Vielzahl von Transistorzellen und Herstellungsverfahren
KR101621150B1 (ko) 2014-07-21 2016-05-13 주식회사 케이이씨 전력 정류 디바이스
KR101621151B1 (ko) 2014-07-21 2016-05-13 주식회사 케이이씨 전력 정류 디바이스
EP3183753A4 (en) * 2014-08-19 2018-01-10 Vishay-Siliconix Electronic circuit
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
DE102014112338A1 (de) 2014-08-28 2016-03-03 Infineon Technologies Austria Ag Halbleiterbauelement und Verfahren zum Herstellen eines Halbleiterbauelements
JP2016096165A (ja) * 2014-11-12 2016-05-26 サンケン電気株式会社 半導体装置
US9515177B2 (en) 2014-11-25 2016-12-06 Infineon Technologies Ag Vertically integrated semiconductor device and manufacturing method
US9443973B2 (en) * 2014-11-26 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with charge compensation region underneath gate trench
DE102014226161B4 (de) * 2014-12-17 2017-10-26 Infineon Technologies Ag Halbleitervorrichtung mit Überlaststrombelastbarkeit
JP6299581B2 (ja) 2014-12-17 2018-03-28 三菱電機株式会社 半導体装置
JP6526981B2 (ja) 2015-02-13 2019-06-05 ローム株式会社 半導体装置および半導体モジュール
WO2016132551A1 (ja) * 2015-02-20 2016-08-25 新電元工業株式会社 半導体装置
JP2016167519A (ja) * 2015-03-09 2016-09-15 株式会社東芝 半導体装置
DE102015204315B4 (de) 2015-03-11 2018-06-28 Infineon Technologies Ag Sensor für ein Halbleiterbauelement
CN106033781A (zh) * 2015-03-16 2016-10-19 中航（重庆）微电子有限公司 肖特基势垒二极管及其制备方法
CN104733535A (zh) * 2015-03-17 2015-06-24 北京中科新微特科技开发股份有限公司 一种功率mosfet
JP2016181618A (ja) 2015-03-24 2016-10-13 株式会社デンソー 半導体装置
JP2016181617A (ja) 2015-03-24 2016-10-13 株式会社デンソー 半導体装置
DE102015105758A1 (de) * 2015-04-15 2016-10-20 Infineon Technologies Ag Halbleiterbauelement und herstellungsverfahren
US9299830B1 (en) * 2015-05-07 2016-03-29 Texas Instruments Incorporated Multiple shielding trench gate fet
TWI555163B (zh) * 2015-07-22 2016-10-21 新唐科技股份有限公司 半導體結構
JP6512025B2 (ja) * 2015-08-11 2019-05-15 富士電機株式会社 半導体素子及び半導体素子の製造方法
JP6696166B2 (ja) * 2015-08-19 2020-05-20 富士電機株式会社 半導体装置および製造方法
KR102404114B1 (ko) 2015-08-20 2022-05-30 온세미컨덕터코리아 주식회사 슈퍼정션 반도체 장치 및 그 제조 방법
JP6666671B2 (ja) * 2015-08-24 2020-03-18 ローム株式会社 半導体装置
EP3142149A1 (en) * 2015-09-11 2017-03-15 Nexperia B.V. A semiconductor device and a method of making a semiconductor device
US9806186B2 (en) * 2015-10-02 2017-10-31 D3 Semiconductor LLC Termination region architecture for vertical power transistors
DE102015221376A1 (de) * 2015-11-02 2017-05-04 Robert Bosch Gmbh Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug
JP2017107895A (ja) * 2015-12-07 2017-06-15 サンケン電気株式会社 半導体装置
DE102015121563B4 (de) 2015-12-10 2023-03-02 Infineon Technologies Ag Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements
DE102015121566B4 (de) * 2015-12-10 2021-12-09 Infineon Technologies Ag Halbleiterbauelemente und eine Schaltung zum Steuern eines Feldeffekttransistors eines Halbleiterbauelements
DE102015224965A1 (de) 2015-12-11 2017-06-14 Robert Bosch Gmbh Flächenoptimierter Transistor mit Superlattice-Strukturen
CN105428241B (zh) * 2015-12-25 2018-04-17 上海华虹宏力半导体制造有限公司 具有屏蔽栅的沟槽栅功率器件的制造方法
DE102015122938B4 (de) 2015-12-30 2021-11-11 Infineon Technologies Austria Ag Transistor mit feldelektrode und verfahren zu dessen herstellung
CN108886054B (zh) 2016-03-31 2021-05-25 新电元工业株式会社 半导体装置的制造方法以及半导体装置
WO2017168733A1 (ja) 2016-03-31 2017-10-05 新電元工業株式会社 半導体装置の製造方法及び半導体装置
WO2017187856A1 (ja) * 2016-04-27 2017-11-02 三菱電機株式会社 半導体装置
US9691864B1 (en) * 2016-05-13 2017-06-27 Infineon Technologies Americas Corp. Semiconductor device having a cavity and method for manufacturing thereof
TWI577040B (zh) * 2016-05-19 2017-04-01 國立中山大學 單晶片光伏元件串聯結構的製造方法
JP6649183B2 (ja) 2016-05-30 2020-02-19 株式会社東芝 半導体装置
CN107851662A (zh) * 2016-06-10 2018-03-27 马克斯半导体股份有限公司 沟槽式闸极宽能隙装置的制造
JP6977273B2 (ja) * 2016-06-16 2021-12-08 富士電機株式会社 半導体装置および製造方法
CN107564814B (zh) * 2016-06-30 2020-11-10 株洲中车时代半导体有限公司 一种制作功率半导体的方法
CN106129113B (zh) * 2016-07-11 2019-06-14 中国科学院微电子研究所 一种垂直双扩散金属氧化物半导体场效应晶体管
TWI693713B (zh) 2016-07-22 2020-05-11 立積電子股份有限公司 半導體結構
US9972540B2 (en) 2016-08-07 2018-05-15 International Business Machines Corporation Semiconductor device having multiple thickness oxides
CN109564932B (zh) 2016-08-08 2021-11-05 三菱电机株式会社 半导体装置
CN107785263B (zh) * 2016-08-26 2020-09-04 台湾半导体股份有限公司 具有多重宽度电极结构的场效晶体管及其制造方法
CN107785426B (zh) * 2016-08-31 2020-01-31 无锡华润上华科技有限公司 一种半导体器件及其制造方法
CN107785273B (zh) * 2016-08-31 2020-03-13 无锡华润上华科技有限公司 半导体器件及其制造方法
JP6669628B2 (ja) * 2016-10-20 2020-03-18 トヨタ自動車株式会社 スイッチング素子
JP6659516B2 (ja) * 2016-10-20 2020-03-04 トヨタ自動車株式会社 半導体装置
WO2018078776A1 (ja) * 2016-10-27 2018-05-03 サンケン電気株式会社 半導体装置
CN107039298B (zh) * 2016-11-04 2019-12-24 厦门市三安光电科技有限公司 微元件的转移装置、转移方法、制造方法、装置和电子设备
US9812535B1 (en) * 2016-11-29 2017-11-07 Infineon Technologies Austria Ag Method for manufacturing a semiconductor device and power semiconductor device
KR102335489B1 (ko) * 2016-12-13 2021-12-03 현대자동차 주식회사 반도체 소자 및 그 제조 방법
JP6233539B1 (ja) * 2016-12-21 2017-11-22 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6589845B2 (ja) * 2016-12-21 2019-10-16 株式会社デンソー 半導体装置
JP6996082B2 (ja) * 2016-12-22 2022-01-17 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102017012262B9 (de) 2017-01-27 2021-10-21 Infineon Technologies Austria Ag Halbleiterbauelement aufweisend eine vergrabene Isolationsschicht, eine Isolationsstruktur und eine Verbindungsstruktur sowie Verfahren zu dessen Herstellung
US10163900B2 (en) 2017-02-08 2018-12-25 Globalfoundries Inc. Integration of vertical field-effect transistors and saddle fin-type field effect transistors
US10211333B2 (en) * 2017-04-26 2019-02-19 Alpha And Omega Semiconductor (Cayman) Ltd. Scalable SGT structure with improved FOM
US10236340B2 (en) 2017-04-28 2019-03-19 Semiconductor Components Industries, Llc Termination implant enrichment for shielded gate MOSFETs
US10374076B2 (en) 2017-06-30 2019-08-06 Semiconductor Components Industries, Llc Shield indent trench termination for shielded gate MOSFETs
CN109216452B (zh) * 2017-07-03 2021-11-05 无锡华润上华科技有限公司 沟槽型功率器件及其制备方法
CN109216175B (zh) * 2017-07-03 2021-01-08 无锡华润上华科技有限公司 半导体器件的栅极结构及其制造方法
CN109216432A (zh) * 2017-07-03 2019-01-15 无锡华润上华科技有限公司 沟槽型功率器件及其制备方法
JP7274148B2 (ja) 2017-07-19 2023-05-16 グローバルウェーハズ・ジャパン株式会社 三次元構造体の製造方法、縦型トランジスタの製造方法、および縦型トランジスタ用基板
JP6820811B2 (ja) * 2017-08-08 2021-01-27 三菱電機株式会社 半導体装置および電力変換装置
KR101960077B1 (ko) * 2017-08-30 2019-03-21 파워큐브세미(주) 플로팅 쉴드를 갖는 실리콘카바이드 트렌치 게이트 트랜지스터 및 그 제조 방법
TWI695418B (zh) * 2017-09-22 2020-06-01 新唐科技股份有限公司 半導體元件及其製造方法
JP2019068592A (ja) * 2017-09-29 2019-04-25 トヨタ自動車株式会社 電力変換装置
TWI737855B (zh) * 2017-11-15 2021-09-01 力智電子股份有限公司 功率電晶體及其製造方法
CN108010847B (zh) * 2017-11-30 2020-09-25 上海华虹宏力半导体制造有限公司 屏蔽栅沟槽mosfet及其制造方法
US10777465B2 (en) 2018-01-11 2020-09-15 Globalfoundries Inc. Integration of vertical-transport transistors and planar transistors
CN108172622A (zh) * 2018-01-30 2018-06-15 电子科技大学 功率半导体器件
CN108447911B (zh) * 2018-03-09 2021-07-27 香港商莫斯飞特半导体股份有限公司 一种深浅沟槽半导体功率器件及其制备方法
JP6864640B2 (ja) 2018-03-19 2021-04-28 株式会社東芝 半導体装置及びその制御方法
US10304933B1 (en) * 2018-04-24 2019-05-28 Semiconductor Components Industries, Llc Trench power MOSFET having a trench cavity
CN109037337A (zh) * 2018-06-28 2018-12-18 华为技术有限公司 一种功率半导体器件及制造方法
JP7078226B2 (ja) * 2018-07-19 2022-05-31 国立研究開発法人産業技術総合研究所 半導体装置
CN109119476A (zh) * 2018-08-23 2019-01-01 电子科技大学 具有体内场板的分离栅vdmos器件及其制造方法
CN109326639B (zh) * 2018-08-23 2021-11-23 电子科技大学 具有体内场板的分离栅vdmos器件及其制造方法
DE102018124737A1 (de) * 2018-10-08 2020-04-09 Infineon Technologies Ag Halbleiterbauelement mit einem sic halbleiterkörper und verfahren zur herstellung eines halbleiterbauelements
KR102100863B1 (ko) * 2018-12-06 2020-04-14 현대오트론 주식회사 SiC MOSFET 전력 반도체 소자
US11348997B2 (en) 2018-12-17 2022-05-31 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
CN111384149B (zh) * 2018-12-29 2021-05-14 比亚迪半导体股份有限公司 沟槽型igbt及其制备方法
JP6991370B2 (ja) * 2019-01-08 2022-01-12 三菱電機株式会社 半導体装置及び電力変換装置
CN109767980B (zh) * 2019-01-22 2021-07-30 上海华虹宏力半导体制造有限公司 超级结及其制造方法、超级结的深沟槽制造方法
TWI823892B (zh) * 2019-01-24 2023-12-01 世界先進積體電路股份有限公司 半導體裝置及其製造方法
JP7352360B2 (ja) * 2019-02-12 2023-09-28 株式会社東芝 半導体装置
JP7077251B2 (ja) * 2019-02-25 2022-05-30 株式会社東芝 半導体装置
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
US11521967B2 (en) 2019-06-28 2022-12-06 Stmicroelectronics International N.V. Multi-finger devices with reduced parasitic capacitance
DE102019210285B4 (de) 2019-07-11 2023-09-28 Infineon Technologies Ag Erzeugen eines vergrabenen Hohlraums in einem Halbleitersubstrat
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
JP2021044517A (ja) * 2019-09-13 2021-03-18 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP7374795B2 (ja) 2020-02-05 2023-11-07 株式会社東芝 半導体装置
EP3863066A1 (en) * 2020-02-06 2021-08-11 Infineon Technologies Austria AG Transistor device and method of fabricating a gate of a transistor device
US11264287B2 (en) 2020-02-11 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with cut metal gate and method of manufacture
US11355602B2 (en) 2020-02-18 2022-06-07 Kabushiki Kaisha Toshiba Semiconductor device having multiple conductive parts
JP7465123B2 (ja) 2020-03-12 2024-04-10 株式会社東芝 半導体装置
JP7387501B2 (ja) 2020-03-18 2023-11-28 株式会社東芝 半導体装置およびその制御方法
JP7270575B2 (ja) 2020-04-15 2023-05-10 株式会社東芝 半導体装置
CN111883515A (zh) 2020-07-16 2020-11-03 上海华虹宏力半导体制造有限公司 沟槽栅器件及其制作方法
JP7470071B2 (ja) 2020-07-22 2024-04-17 株式会社東芝 半導体装置
JP7319754B2 (ja) 2020-08-19 2023-08-02 株式会社東芝 半導体装置
KR102382846B1 (ko) * 2020-08-28 2022-04-05 부산대학교 산학협력단 SiC 트렌치 게이트 MOSFET 구조의 임계 치수 변화를 줄이기 위한 자기 정렬 공정 방법 및 자기 정렬 공정 장치
CN112271134B (zh) * 2020-10-20 2021-10-22 苏州东微半导体股份有限公司 半导体功率器件的制造方法
KR102413641B1 (ko) 2020-11-27 2022-06-27 주식회사 예스파워테크닉스 트렌치 파워 모스펫 제조 방법 및 그 방법에 의해 제조된 트렌치 파워 모스펫
TWI801783B (zh) * 2020-12-09 2023-05-11 大陸商上海瀚薪科技有限公司 碳化矽半導體元件
KR102437528B1 (ko) * 2020-12-22 2022-08-29 한국과학기술원 쇼트키 배리어 다이오드 수동소자 및 그 제조 방법
CN112820648B (zh) * 2020-12-31 2023-08-01 扬州扬杰电子科技股份有限公司 一种氮化镓金属氧化物半导体晶体管及其制备方法
JP2022111450A (ja) 2021-01-20 2022-08-01 株式会社東芝 半導体装置
US11387338B1 (en) 2021-01-22 2022-07-12 Applied Materials, Inc. Methods for forming planar metal-oxide-semiconductor field-effect transistors
WO2022162894A1 (ja) * 2021-01-29 2022-08-04 サンケン電気株式会社 半導体装置
JP7470075B2 (ja) 2021-03-10 2024-04-17 株式会社東芝 半導体装置
CN113066865B (zh) * 2021-03-15 2022-10-28 无锡新洁能股份有限公司 降低开关损耗的半导体器件及其制作方法
KR102444384B1 (ko) * 2021-03-16 2022-09-19 주식회사 키파운드리 트렌치 파워 mosfet 및 그 제조방법
FR3121280B1 (fr) * 2021-03-29 2023-12-22 Commissariat Energie Atomique Transistor à effet de champ à structure verticale
JP2022167237A (ja) * 2021-04-22 2022-11-04 有限会社Mtec 半導体素子の製造方法及び縦型ｍｏｓｆｅｔ素子
CN113192842B (zh) * 2021-05-19 2023-05-09 厦门中能微电子有限公司 一种CoolMOS器件制作方法
JP2023027863A (ja) 2021-08-18 2023-03-03 株式会社東芝 半導体装置およびその製造方法
CN113707713B (zh) * 2021-08-31 2023-06-30 西安电子科技大学 多级瓣状体区金属氧化物半导体功率器件及其制作方法
EP4152408A1 (en) * 2021-09-21 2023-03-22 Infineon Technologies Austria AG Semiconductor die comprising a device
DE102021125271A1 (de) 2021-09-29 2023-03-30 Infineon Technologies Ag LeistungshalbleitervorrichtungVerfahren zur Herstellung einer Leistungshalbleitervorrichtung
CN113990921B (zh) * 2021-10-18 2023-12-08 深圳市威兆半导体股份有限公司 半导体纵向器件及其生产方法
KR102635228B1 (ko) * 2021-12-28 2024-02-13 파워큐브세미 (주) 절연 거리가 확보된 박막형 패키지
CN114334823A (zh) * 2021-12-31 2022-04-12 上海晶岳电子有限公司 一种改善晶圆翘曲的sgt器件及其制作方法
CN114068531B (zh) * 2022-01-17 2022-03-29 深圳市威兆半导体有限公司 一种基于sgt-mosfet的电压采样结构
CN114496995B (zh) * 2022-04-18 2022-06-17 深圳市威兆半导体有限公司 一种带温度采样功能的屏蔽栅器件
EP4345908A1 (en) * 2022-09-28 2024-04-03 Nexperia B.V. Semiconductor device and method of forming a semiconductor device
CN115799340B (zh) * 2023-01-09 2023-05-12 无锡先瞳半导体科技有限公司 屏蔽栅场效应晶体管
CN116313809B (zh) * 2023-03-14 2024-02-23 深圳市至信微电子有限公司 沟槽型mos场效应晶体管的制备方法和应用
CN116093146B (zh) * 2023-04-11 2024-02-20 江苏应能微电子股份有限公司 一种分段式分离栅sgt mosfet结构
CN116388742B (zh) * 2023-06-02 2023-08-29 东莞市长工微电子有限公司 功率半导体器件栅极驱动电路及驱动方法
CN117352555B (zh) * 2023-12-06 2024-04-09 无锡锡产微芯半导体有限公司 一种集成式屏蔽栅沟槽mosfet及其制备工艺
CN117410346B (zh) * 2023-12-14 2024-03-26 深圳市森国科科技股份有限公司 一种沟槽栅碳化硅mosfet及制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541001A (en) * 1982-09-23 1985-09-10 Eaton Corporation Bidirectional power FET with substrate-referenced shield
CN1204146A (zh) * 1997-06-27 1999-01-06 三菱电机株式会社 半导体器件及其制造方法
EP1227522A2 (en) * 2001-01-26 2002-07-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590863B2 (ja) * 1987-03-12 1997-03-12 日本電装株式会社 導電変調型ｍｏｓｆｅｔ
JP2570742B2 (ja) * 1987-05-27 1997-01-16 ソニー株式会社 半導体装置
JPS6459868A (en) * 1987-08-29 1989-03-07 Fuji Electric Co Ltd Semiconductor device having insulating gate
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
US5326711A (en) * 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
JP3257186B2 (ja) * 1993-10-12 2002-02-18 富士電機株式会社 絶縁ゲート型サイリスタ
JPH08264772A (ja) * 1995-03-23 1996-10-11 Toyota Motor Corp 電界効果型半導体素子
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US6236099B1 (en) * 1996-04-22 2001-05-22 International Rectifier Corp. Trench MOS device and process for radhard device
JPH09331062A (ja) * 1996-06-11 1997-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6037628A (en) * 1997-06-30 2000-03-14 Intersil Corporation Semiconductor structures with trench contacts
JP4061711B2 (ja) * 1998-06-18 2008-03-19 株式会社デンソー Ｍｏｓトランジスタ及びその製造方法
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6462376B1 (en) * 1999-01-11 2002-10-08 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Power MOS element and method for producing the same
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
GB9917099D0 (en) * 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
US6376878B1 (en) * 2000-02-11 2002-04-23 Fairchild Semiconductor Corporation MOS-gated devices with alternating zones of conductivity
JP2001284584A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 半導体装置及びその製造方法
EP1170803A3 (en) * 2000-06-08 2002-10-09 Siliconix Incorporated Trench gate MOSFET and method of making the same
JP4528460B2 (ja) * 2000-06-30 2010-08-18 株式会社東芝 半導体素子
DE10038177A1 (de) * 2000-08-04 2002-02-21 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterschaltelement mit zwei Steuerelektroden
US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6608350B2 (en) * 2000-12-07 2003-08-19 International Rectifier Corporation High voltage vertical conduction superjunction semiconductor device
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6683363B2 (en) * 2001-07-03 2004-01-27 Fairchild Semiconductor Corporation Trench structure for semiconductor devices
US6621107B2 (en) * 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6573558B2 (en) * 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
GB0122120D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Edge termination in MOS transistors
JP4097417B2 (ja) * 2001-10-26 2008-06-11 株式会社ルネサステクノロジ 半導体装置
DE10153315B4 (de) * 2001-10-29 2004-05-19 Infineon Technologies Ag Halbleiterbauelement
JP4009825B2 (ja) * 2002-02-20 2007-11-21 サンケン電気株式会社 絶縁ゲート型トランジスタ
US6841825B2 (en) * 2002-06-05 2005-01-11 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP4903055B2 (ja) * 2003-12-30 2012-03-21 フェアチャイルド・セミコンダクター・コーポレーション パワー半導体デバイスおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4541001A (en) * 1982-09-23 1985-09-10 Eaton Corporation Bidirectional power FET with substrate-referenced shield
CN1204146A (zh) * 1997-06-27 1999-01-06 三菱电机株式会社 半导体器件及其制造方法
EP1227522A2 (en) * 2001-01-26 2002-07-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device

Also Published As

Publication number Publication date
CN101794817B (zh) 2013-04-03
JP2012109580A (ja) 2012-06-07
WO2005065385A3 (en) 2006-04-06
KR101216533B1 (ko) 2013-01-21
WO2005065385A2 (en) 2005-07-21
KR20120003019A (ko) 2012-01-09
DE112004003046B4 (de) 2016-12-29
CN101180737A (zh) 2008-05-14
CN101794817A (zh) 2010-08-04
JP2007529115A (ja) 2007-10-18
KR20070032627A (ko) 2007-03-22
TWI404220B (zh) 2013-08-01
TW201308647A (zh) 2013-02-16
JP4903055B2 (ja) 2012-03-21
DE202004021352U8 (de) 2008-02-21
TWI399855B (zh) 2013-06-21
CN102420241A (zh) 2012-04-18
TW200527701A (en) 2005-08-16
JP2008227514A (ja) 2008-09-25
DE112004002608B4 (de) 2015-12-03
DE112004002608T5 (de) 2006-11-16
TWI521726B (zh) 2016-02-11
TW200840041A (en) 2008-10-01
CN103199017A (zh) 2013-07-10
CN101180737B (zh) 2011-12-07
DE202004021352U1 (de) 2007-08-16

Similar Documents

Publication Publication Date Title
CN103199017B (zh) 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法
US9368587B2 (en) Accumulation-mode field effect transistor with improved current capability
US7345342B2 (en) Power semiconductor devices and methods of manufacture
CN102420241B (zh) 半导体器件和在半导体器件外边缘处的终端结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160803

Termination date: 20201228