JP5784665B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5784665B2 JP5784665B2 JP2013061119A JP2013061119A JP5784665B2 JP 5784665 B2 JP5784665 B2 JP 5784665B2 JP 2013061119 A JP2013061119 A JP 2013061119A JP 2013061119 A JP2013061119 A JP 2013061119A JP 5784665 B2 JP5784665 B2 JP 5784665B2
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- trench
- insulating film
- electrode
- electrode material
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000007772 electrode material Substances 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 84
- 230000003071 parasitic effect Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
Description
また、FP電極23は、その上端23aがFP絶縁膜25よりも上方に突出するように設けられる。さらに、FP電極23の上端23aは、絶縁膜31(第3絶縁膜)に覆われる。そして、FP電極23とゲート電極27との間は、絶縁膜31により絶縁される。
Cgs=Cgs1+Cgs2+Cgs3
である。Cgs1は、ゲート電極27とベース層15との間の寄生容量である。ベース層15は、コンタクト層19を介してソース電極35と電気的に接続されている。Cgs2は、ゲート電極27とFP電極23との間の寄生容量である。FP電極23とソース電極35は、図示しない部分で電気的に接続される。そして、Cgs3は、ゲート電極27とソース電極35との間の寄生容量である。
Claims (5)
- 半導体層の上面から下面方向にトレンチを形成し、
前記トレンチの内面を覆う第1絶縁膜を形成し、
前記第1絶縁膜を介して前記トレンチの内部を埋め込み、前記半導体の上面を覆う電極材料を形成し、
前記電極材料の前記トレンチの内部を埋め込んだ部分および前記トレンチの開口を覆う部分を残して前記電極材料を選択的に除去し、
前記半導体層と前記電極材料との間の前記第1絶縁膜を前記トレンチ内の所定の深さまでエッチングし、前記第1絶縁膜の前記トレンチ上部を覆う部分を除去し、
前記電極材料の前記トレンチの開口を覆う部分および前記トレンチに埋め込まれた部分をエッチバックして前記トレンチの下部に第1電極を形成し、
前記トレンチ上部の内面を覆う第2絶縁膜と、前記トレンチ上部において前記第1絶縁膜から露出した前記第1電極の端部を覆う第3絶縁膜と、を形成し、
前記第1電極の上に前記第3絶縁膜を介して第2電極を形成する半導体装置の製造方法。 - 前記半導体層を熱酸化して前記第2絶縁膜を形成し、
前記第1電極を熱酸化して前記第3絶縁膜を形成する請求項1記載の半導体装置の製造方法。 - 前記半導体層を熱酸化して前記第1絶縁膜を形成する請求項1または2に記載の半導体装置の製造方法。
- 前記電極材料は、多結晶シリコンである請求項1〜3のいずれか1つに記載の半導体装置の製造方法。
- 前記電極材料の前記トレンチの開口を覆う部分の幅は、前記開口の幅と同じか、または、それよりも広い請求項1〜4のいずれか1つに記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013061119A JP5784665B2 (ja) | 2013-03-22 | 2013-03-22 | 半導体装置の製造方法 |
US14/023,235 US8969157B2 (en) | 2013-03-22 | 2013-09-10 | Method of manufacturing semiconductor device having field plate electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2013061119A JP5784665B2 (ja) | 2013-03-22 | 2013-03-22 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014187194A JP2014187194A (ja) | 2014-10-02 |
JP5784665B2 true JP5784665B2 (ja) | 2015-09-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013061119A Expired - Fee Related JP5784665B2 (ja) | 2013-03-22 | 2013-03-22 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US8969157B2 (ja) |
JP (1) | JP5784665B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3142149A1 (en) * | 2015-09-11 | 2017-03-15 | Nexperia B.V. | A semiconductor device and a method of making a semiconductor device |
JP6400545B2 (ja) | 2015-09-11 | 2018-10-03 | 株式会社東芝 | 半導体装置 |
CN105529273B (zh) * | 2016-01-15 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | 沟槽栅功率器件的制造方法 |
JP6649216B2 (ja) * | 2016-09-16 | 2020-02-19 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP6744270B2 (ja) * | 2017-09-20 | 2020-08-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP7106476B2 (ja) * | 2019-03-19 | 2022-07-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP7252860B2 (ja) * | 2019-08-20 | 2023-04-05 | 株式会社東芝 | 半導体装置 |
JP7319491B2 (ja) * | 2019-12-06 | 2023-08-02 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN111816709B (zh) * | 2020-09-03 | 2021-06-11 | 江苏应能微电子有限公司 | 一种屏蔽闸沟槽式功率金属氧化物半导体场效晶体管 |
CN112802892A (zh) * | 2021-01-06 | 2021-05-14 | 华虹半导体(无锡)有限公司 | Sgt结构及其制作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103199017B (zh) | 2003-12-30 | 2016-08-03 | 飞兆半导体公司 | 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法 |
US7183610B2 (en) * | 2004-04-30 | 2007-02-27 | Siliconix Incorporated | Super trench MOSFET including buried source electrode and method of fabricating the same |
JP5183959B2 (ja) | 2007-04-23 | 2013-04-17 | 新日本無線株式会社 | Mosfet型半導体装置の製造方法 |
US7879686B2 (en) * | 2009-01-16 | 2011-02-01 | Infineon Technologies Austria Ag | Semiconductor device and method for manufacturing |
US9419129B2 (en) * | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
JP2011199109A (ja) | 2010-03-23 | 2011-10-06 | Renesas Electronics Corp | パワーmosfet |
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2013
- 2013-03-22 JP JP2013061119A patent/JP5784665B2/ja not_active Expired - Fee Related
- 2013-09-10 US US14/023,235 patent/US8969157B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2014187194A (ja) | 2014-10-02 |
US20140287574A1 (en) | 2014-09-25 |
US8969157B2 (en) | 2015-03-03 |
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