WO2005065385A3 - Power semiconductor devices and methods of manufacture - Google Patents

Power semiconductor devices and methods of manufacture Download PDF

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Publication number
WO2005065385A3
WO2005065385A3 PCT/US2004/043965 US2004043965W WO2005065385A3 WO 2005065385 A3 WO2005065385 A3 WO 2005065385A3 US 2004043965 W US2004043965 W US 2004043965W WO 2005065385 A3 WO2005065385 A3 WO 2005065385A3
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WO
WIPO (PCT)
Prior art keywords
power devices
formation
improved
methods
devices
Prior art date
Application number
PCT/US2004/043965
Other languages
French (fr)
Other versions
WO2005065385A2 (en
Inventor
Ashok Challa
Alan Elbanhawy
Thomas E Grebs
Christopher B Kocon
Nathan L Kraft
Dean E Probst
Rodney S Ridley
Steven P Sapp
Qi Wang
Peter H Wilson
Joseph A Yedinak
Chongman Yun
Jin-Young Jung
Ho-Cheol Jang
Richard Stokes
Gary M Dolny
John Mytych
Becky Losee
Adam Selsley
Robert Herrick
James J Murphy
Gordon K Madson
Debra S Woolsey
Bruce D Marchant
Christopher L Rexer
Babak S Sani
Jae-Gil Lee
Original Assignee
Fairchild Semiconductor
Ashok Challa
Alan Elbanhawy
Thomas E Grebs
Christopher B Kocon
Nathan L Kraft
Dean E Probst
Rodney S Ridley
Steven P Sapp
Qi Wang
Peter H Wilson
Joseph A Yedinak
Chongman Yun
Jin-Young Jung
Ho-Cheol Jang
Richard Stokes
Gary M Dolny
John Mytych
Becky Losee
Adam Selsley
Robert Herrick
James J Murphy
Gordon K Madson
Debra S Woolsey
Bruce D Marchant
Christopher L Rexer
Babak S Sani
Jae-Gil Lee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor, Ashok Challa, Alan Elbanhawy, Thomas E Grebs, Christopher B Kocon, Nathan L Kraft, Dean E Probst, Rodney S Ridley, Steven P Sapp, Qi Wang, Peter H Wilson, Joseph A Yedinak, Chongman Yun, Jin-Young Jung, Ho-Cheol Jang, Richard Stokes, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J Murphy, Gordon K Madson, Debra S Woolsey, Bruce D Marchant, Christopher L Rexer, Babak S Sani, Jae-Gil Lee filed Critical Fairchild Semiconductor
Priority to JP2006547577A priority Critical patent/JP4903055B2/en
Priority to CN2004800421611A priority patent/CN101180737B/en
Priority to KR1020117030055A priority patent/KR101216533B1/en
Priority to DE202004021352U priority patent/DE202004021352U1/en
Priority to DE112004002608.3T priority patent/DE112004002608B4/en
Priority to KR1020067015458A priority patent/KR20070032627A/en
Publication of WO2005065385A2 publication Critical patent/WO2005065385A2/en
Publication of WO2005065385A3 publication Critical patent/WO2005065385A3/en

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronics are disclosed. One aspect of the invention combines a number of charge balancing techniques (311) and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices (300B) with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices (300B) are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches (300, 302), formation of dielectric layers inside trenches (301, 302), formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices (300B) incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device (300B) and provide improvements to the packaging of charge balanced power devices.
PCT/US2004/043965 2003-12-30 2004-12-28 Power semiconductor devices and methods of manufacture WO2005065385A2 (en)

Priority Applications (6)

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JP2006547577A JP4903055B2 (en) 2003-12-30 2004-12-28 Power semiconductor device and manufacturing method thereof
CN2004800421611A CN101180737B (en) 2003-12-30 2004-12-29 Power semiconductor devices and methods of manufacture
KR1020117030055A KR101216533B1 (en) 2003-12-30 2004-12-29 Power Semiconductor Devices and Methods of Manufacture
DE202004021352U DE202004021352U1 (en) 2003-12-30 2004-12-29 Power semiconductor devices
DE112004002608.3T DE112004002608B4 (en) 2003-12-30 2004-12-29 Power semiconductor devices and manufacturing methods
KR1020067015458A KR20070032627A (en) 2003-12-30 2004-12-29 Power semiconductor device and manufacturing method

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US53379003P 2003-12-30 2003-12-30
US60/533,790 2003-12-30
US58884504P 2004-07-15 2004-07-15
US60/588,845 2004-07-15

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WO2005065385A3 true WO2005065385A3 (en) 2006-04-06

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KR (2) KR101216533B1 (en)
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