JP2017107895A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2017107895A
JP2017107895A JP2015238300A JP2015238300A JP2017107895A JP 2017107895 A JP2017107895 A JP 2017107895A JP 2015238300 A JP2015238300 A JP 2015238300A JP 2015238300 A JP2015238300 A JP 2015238300A JP 2017107895 A JP2017107895 A JP 2017107895A
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Japan
Prior art keywords
trench gate
trench
source layer
gate electrode
source
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JP2015238300A
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Japanese (ja)
Inventor
太郎 近藤
Taro Kondo
太郎 近藤
俊介 福永
Shunsuke Fukunaga
俊介 福永
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Priority to JP2015238300A priority Critical patent/JP2017107895A/en
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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high switching speed and a structure less likely to be broken by discharge.SOLUTION: A trench gate MOSFET comprises: trench gate electrodes 7 each arranged to oppose an N+ source layer, in which a corner 11 of the trench gate electrode 7 on an upper part on the side opposite to the N+ source layer and a corner of an upper part 12 of the N+ source layer are rounded. A height of the upper part of the trench gate electrode 7 is made lower than a height of the N+ source layer. By changing the heights, a distance between the two corners is increased.SELECTED DRAWING: Figure 3

Description

本発明はスイッチング速度が速く、かつ、放電によって破壊しにくい構造の半導体装置に関する。   The present invention relates to a semiconductor device having a structure that has a high switching speed and is difficult to be destroyed by electric discharge.

容量を低減し、スイッチングスピードの速いＭＯＳＦＥＴを実現する構造として、トレンチ内部電極を、トレンチゲート電極と、トレンチソース電極に分離させたトレンチゲート型構造が知られている。
A trench gate structure in which a trench internal electrode is separated into a trench gate electrode and a trench source electrode is known as a structure that realizes a MOSFET with reduced capacitance and high switching speed.

特開２０１３−６９８５２号公報JP 2013-69852 A

しかしながら、本構造においては、ゲート電極とソース間で放電が生じやすく、電圧印加時に放電によって素子が破壊し易いという問題がある。 However, in this structure, there is a problem that a discharge is easily generated between the gate electrode and the source, and the device is easily destroyed by the discharge when a voltage is applied.

本発明は、上記問題点を解決し、速いスイッチングスピード有し、放電によって素子の破壊の生じにくいＭＯＳの構造を提案することを目的とする。 An object of the present invention is to solve the above-mentioned problems, and to propose a MOS structure that has a fast switching speed and is less likely to cause element breakdown due to discharge.


トレンチゲート型MOSFETにおいて、トレンチ側面の半導体層と対向するトレンチゲート電極の上部角部の形状をラウンド形状にし、トレンチゲート電極の上部の位置を、Ｎ＋ソース領域上部の位置より低くする。
In the trench gate type MOSFET, the shape of the upper corner of the trench gate electrode facing the semiconductor layer on the side surface of the trench is made round, and the position of the upper part of the trench gate electrode is made lower than the position of the upper part of the N + source region.

本発明によれば、スイッチングスピードが速く、ゲート、ソース間の放電によって素子の破壊の生じにくい、ＭＯＳを製造できる。
According to the present invention, it is possible to manufacture a MOS that has a high switching speed and is less likely to be damaged by a discharge between a gate and a source.

従来技術のトレンチゲート型ＭＯＳの全体構造である。It is the whole structure of a conventional trench gate type MOS. 従来技術のトレンチゲート型ＭＯＳのトレンチ内部構造である。2 is a trench internal structure of a conventional trench gate type MOS. 本発明におけるトレンチゲート型ＭＯＳのトレンチ内部構造である。It is the trench internal structure of the trench gate type MOS in this invention.

以下、本発明の実施の形態となる構造について説明する。 Hereinafter, the structure which becomes embodiment of this invention is demonstrated.

実施例１に係るトレンチ内部の構造について説明する。図1は従来技術のトレンチゲート型ＭＯＳの全体構造である。トレンチ内部のＮ＋ソース層３と対向する２つのトレンチゲート電極７を有し、２つのトレンチゲート電極７の間に、トレンチソース電極２を有する。図２は従来型のトレンチゲート型ＭＯＳのトレンチ内部構造、図3は本発明実施例１におけるトレンチゲート型ＭＯＳのトレンチ内部構造である。従来型のトレンチゲート電極構造と比較して、図３の実施例では、トレンチゲート電極上部の前記Ｎ＋ソース層と対向する側の角部１１および、前記トレンチゲート電極と対向する前記Ｎ＋ソース層の角部１２がラウンド形状になっている。また、トレンチゲート電極上部の前記Ｎ＋ソース層と対向する側の角部１１の高さが、Ｎ＋ソース層上部１２の高さより低いことを特徴とする。図３では、Ｎ＋ソース層上部１２の高さと、トレンチゲート電極上部のソース半導体層と対向する側の角部１１との差をaで記してある。また、図３では、トレンチゲート電極上部の前記ソース層と対向する側の角部以外の角部もラウンド形状になっているが、このような形状でも同じ特性が得られる。 The structure inside the trench according to the first embodiment will be described. FIG. 1 shows the overall structure of a conventional trench gate type MOS. Two trench gate electrodes 7 facing the N + source layer 3 inside the trench are provided, and the trench source electrode 2 is provided between the two trench gate electrodes 7. FIG. 2 shows a trench internal structure of a conventional trench gate type MOS, and FIG. 3 shows a trench internal structure of the trench gate type MOS according to Embodiment 1 of the present invention. Compared to the conventional trench gate electrode structure, in the embodiment of FIG. 3, the corner 11 on the side facing the N + source layer above the trench gate electrode and the N + source layer facing the trench gate electrode are arranged. The corner 12 has a round shape. Further, the height of the corner portion 11 on the side facing the N + source layer above the trench gate electrode is lower than the height of the N + source layer upper portion 12. In FIG. 3, the difference between the height of the N + source layer upper portion 12 and the corner portion 11 on the side facing the source semiconductor layer above the trench gate electrode is indicated by a. Further, in FIG. 3, corners other than the corners on the side facing the source layer above the trench gate electrode have a round shape, but the same characteristics can be obtained even in such a shape.

１、ソース電極
２、トレンチソース電極
３、Ｎ＋ソース層
４、絶縁膜
５、Ｐ＋層
６、Ｎ−エピタキシャル層
７、トレンチゲート電極
８、Ｎ＋半導体基板
９、ドレイン電極
１０、トレンチ
１１、トレンチゲート電極上部のＮ＋ソース層と対向する側の角部
１２、Ｎ＋ソース層上部 DESCRIPTION OF SYMBOLS 1, Source electrode 2, Trench source electrode 3, N + source layer 4, Insulating film 5, P + layer 6, N-epitaxial layer 7, Trench gate electrode 8, N + semiconductor substrate 9, Drain electrode 10, Trench 11, Trench gate electrode Corner portion on the side facing the upper N + source layer 12, upper portion of the N + source layer

Claims (2)

トレンチ内部のＮ＋ソース層と対向してトレンチゲート電極を有し、前記トレンチゲート電極間にトレンチソース電極を有し、前記トレンチゲート電極上部の前記Ｎ＋ソース層と対向する側の角部および、前記トレンチゲート電極と対向する前記Ｎ＋ソース層の角部がラウンド形状であることを特徴とする半導体装置。
A trench gate electrode facing the N + source layer inside the trench, a trench source electrode between the trench gate electrodes, and a corner on the side facing the N + source layer above the trench gate electrode; A corner of the N + source layer facing the trench gate electrode has a round shape.
前記トレンチゲート電極上部の高さが、前記Ｎ＋ソース層の高さより低いことを特徴とする、請求項１に記載の半導体装置。 The semiconductor device according to claim 1, wherein a height of the upper portion of the trench gate electrode is lower than a height of the N + source layer.
JP2015238300A 2015-12-07 2015-12-07 Semiconductor device Pending JP2017107895A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11538934B2 (en) 2021-01-12 2022-12-27 Sanken Electric Co., Ltd. Semiconductor device having a group of trenches in an active region and a mesa portion

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004303877A (en) * 2003-03-31 2004-10-28 Sanken Electric Co Ltd Manufacturing method for semiconductor element
JP2008166434A (en) * 2006-12-27 2008-07-17 Sanyo Electric Co Ltd Semiconductor device and manufacturing method thereof
JP2008227514A (en) * 2003-12-30 2008-09-25 Fairchild Semiconductor Corp Power semiconductor device and its production process
JP2014027182A (en) * 2012-07-27 2014-02-06 Toshiba Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004303877A (en) * 2003-03-31 2004-10-28 Sanken Electric Co Ltd Manufacturing method for semiconductor element
JP2008227514A (en) * 2003-12-30 2008-09-25 Fairchild Semiconductor Corp Power semiconductor device and its production process
JP2008166434A (en) * 2006-12-27 2008-07-17 Sanyo Electric Co Ltd Semiconductor device and manufacturing method thereof
JP2014027182A (en) * 2012-07-27 2014-02-06 Toshiba Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11538934B2 (en) 2021-01-12 2022-12-27 Sanken Electric Co., Ltd. Semiconductor device having a group of trenches in an active region and a mesa portion

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