ATE515064T1 - Graben-gate-mosfet und verfahren zu dessen herstellung - Google Patents

Graben-gate-mosfet und verfahren zu dessen herstellung

Info

Publication number
ATE515064T1
ATE515064T1 AT08843598T AT08843598T ATE515064T1 AT E515064 T1 ATE515064 T1 AT E515064T1 AT 08843598 T AT08843598 T AT 08843598T AT 08843598 T AT08843598 T AT 08843598T AT E515064 T1 ATE515064 T1 AT E515064T1
Authority
AT
Austria
Prior art keywords
trench
region
trench gate
narrow
producing same
Prior art date
Application number
AT08843598T
Other languages
English (en)
Inventor
Steven Peake
Philip Rutter
Christopher Rogers
Miron Drobnis
Andrew Butler
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE515064T1 publication Critical patent/ATE515064T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
AT08843598T 2007-10-29 2008-10-22 Graben-gate-mosfet und verfahren zu dessen herstellung ATE515064T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07119506 2007-10-29
PCT/IB2008/054355 WO2009057015A1 (en) 2007-10-29 2008-10-22 Trench gate mosfet and method of manufacturing the same

Publications (1)

Publication Number Publication Date
ATE515064T1 true ATE515064T1 (de) 2011-07-15

Family

ID=40344629

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08843598T ATE515064T1 (de) 2007-10-29 2008-10-22 Graben-gate-mosfet und verfahren zu dessen herstellung

Country Status (4)

Country Link
US (1) US8357971B2 (de)
EP (1) EP2206154B1 (de)
AT (1) ATE515064T1 (de)
WO (1) WO2009057015A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100065895A (ko) * 2008-12-09 2010-06-17 주식회사 동부하이텍 트렌치형 ｍｏｓｆｅｔ 소자의 게이트 및 게이트 형성방법
EP2421046A1 (de) * 2010-08-16 2012-02-22 Nxp B.V. MOSFET mit einem Kapazitätskontrollbereich
TWI488309B (zh) * 2013-05-31 2015-06-11 碩頡科技股份有限公司 溝渠式閘極金氧半場效電晶體及其製造方法
US11056586B2 (en) 2018-09-28 2021-07-06 General Electric Company Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices
US10937869B2 (en) 2018-09-28 2021-03-02 General Electric Company Systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
GB9826041D0 (en) 1998-11-28 1999-01-20 Koninkl Philips Electronics Nv Trench-gate semiconductor devices and their manufacture
EP1170803A3 (de) 2000-06-08 2002-10-09 Siliconix Incorporated MOSFET mit Graben-Gateelektrode und Verfahren zu dessen Herstellung
DE10038177A1 (de) 2000-08-04 2002-02-21 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterschaltelement mit zwei Steuerelektroden
US6683346B2 (en) 2001-03-09 2004-01-27 Fairchild Semiconductor Corporation Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge
JP3713498B2 (ja) * 2003-03-28 2005-11-09 株式会社東芝 半導体装置及びその製造方法
JP3964819B2 (ja) * 2003-04-07 2007-08-22 株式会社東芝 絶縁ゲート型半導体装置
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
EP1407820B1 (de) * 2003-05-22 2009-08-19 Agilent Technologies, Inc. Septum mit Klappe
GB0327792D0 (en) 2003-11-29 2003-12-31 Koninkl Philips Electronics Nv Trench insulated gate field effect transistor
JP4699692B2 (ja) 2003-12-26 2011-06-15 ローム株式会社 半導体装置の製造方法および半導体装置
CN103199017B (zh) 2003-12-30 2016-08-03 飞兆半导体公司 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法
US7416948B2 (en) 2003-12-30 2008-08-26 Fairchild Semiconductor Corporation Trench FET with improved body to gate alignment
GB0407363D0 (en) 2004-03-31 2004-05-05 Koninkl Philips Electronics Nv Trench semiconductor device and method of manufacturing it
DE102004024661B4 (de) 2004-05-18 2006-04-13 Infineon Technologies Ag Verfahren zur Herstellung eines Trenchtransistors
JP2006202931A (ja) * 2005-01-20 2006-08-03 Renesas Technology Corp 半導体装置およびその製造方法
TWI297182B (en) * 2006-02-10 2008-05-21 Nanya Technology Corp Semiconductor device having a trench gate the fabricating method of the same

Also Published As

Publication number Publication date
EP2206154A1 (de) 2010-07-14
US20100320532A1 (en) 2010-12-23
EP2206154B1 (de) 2011-06-29
US8357971B2 (en) 2013-01-22
WO2009057015A1 (en) 2009-05-07

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