GB0327792D0 - Trench insulated gate field effect transistor - Google Patents

Trench insulated gate field effect transistor

Info

Publication number
GB0327792D0
GB0327792D0 GBGB0327792.8A GB0327792A GB0327792D0 GB 0327792 D0 GB0327792 D0 GB 0327792D0 GB 0327792 A GB0327792 A GB 0327792A GB 0327792 D0 GB0327792 D0 GB 0327792D0
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
insulated gate
gate field
trench insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0327792.8A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to GBGB0327792.8A priority Critical patent/GB0327792D0/en
Publication of GB0327792D0 publication Critical patent/GB0327792D0/en
Priority to CNB2004800351977A priority patent/CN100546045C/en
Priority to PCT/IB2004/052562 priority patent/WO2005053032A2/en
Priority to EP04799252A priority patent/EP1692726A2/en
Priority to JP2006540762A priority patent/JP2007512700A/en
Priority to US10/580,625 priority patent/US20070126055A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
GBGB0327792.8A 2003-11-29 2003-11-29 Trench insulated gate field effect transistor Ceased GB0327792D0 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GBGB0327792.8A GB0327792D0 (en) 2003-11-29 2003-11-29 Trench insulated gate field effect transistor
CNB2004800351977A CN100546045C (en) 2003-11-29 2004-11-26 Trench insulated gate field effect transistor
PCT/IB2004/052562 WO2005053032A2 (en) 2003-11-29 2004-11-26 Trench insulated gate field effect transistor
EP04799252A EP1692726A2 (en) 2003-11-29 2004-11-26 Trench insulated gate field effect transistor
JP2006540762A JP2007512700A (en) 2003-11-29 2004-11-26 Trench insulated gate field effect transistor
US10/580,625 US20070126055A1 (en) 2003-11-29 2004-11-26 Trench insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0327792.8A GB0327792D0 (en) 2003-11-29 2003-11-29 Trench insulated gate field effect transistor

Publications (1)

Publication Number Publication Date
GB0327792D0 true GB0327792D0 (en) 2003-12-31

Family

ID=29798071

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0327792.8A Ceased GB0327792D0 (en) 2003-11-29 2003-11-29 Trench insulated gate field effect transistor

Country Status (6)

Country Link
US (1) US20070126055A1 (en)
EP (1) EP1692726A2 (en)
JP (1) JP2007512700A (en)
CN (1) CN100546045C (en)
GB (1) GB0327792D0 (en)
WO (1) WO2005053032A2 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0407363D0 (en) * 2004-03-31 2004-05-05 Koninkl Philips Electronics Nv Trench semiconductor device and method of manufacturing it
DE102005041256B4 (en) 2005-08-31 2007-12-20 Infineon Technologies Ag trench transistor
DE102006026943B4 (en) * 2006-06-09 2011-01-05 Infineon Technologies Austria Ag By field effect controllable trench transistor with two control electrodes
EP2206154B1 (en) 2007-10-29 2011-06-29 Nxp B.V. Trench gate MOSFET and method of manufacturing the same
US8022470B2 (en) * 2008-09-04 2011-09-20 Infineon Technologies Austria Ag Semiconductor device with a trench gate structure and method for the production thereof
US8796764B2 (en) 2008-09-30 2014-08-05 Infineon Technologies Austria Ag Semiconductor device comprising trench gate and buried source electrodes
US7851312B2 (en) 2009-01-23 2010-12-14 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
US8021947B2 (en) 2009-12-09 2011-09-20 Semiconductor Components Industries, Llc Method of forming an insulated gate field effect transistor device having a shield electrode structure
US8247296B2 (en) 2009-12-09 2012-08-21 Semiconductor Components Industries, Llc Method of forming an insulated gate field effect transistor device having a shield electrode structure
US8519473B2 (en) * 2010-07-14 2013-08-27 Infineon Technologies Ag Vertical transistor component
US8466513B2 (en) 2011-06-13 2013-06-18 Semiconductor Components Industries, Llc Semiconductor device with enhanced mobility and method
JP2013093444A (en) * 2011-10-26 2013-05-16 Rohm Co Ltd High-speed switching operation circuit
US9029215B2 (en) 2012-05-14 2015-05-12 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device having a shield electrode structure
US8921184B2 (en) 2012-05-14 2014-12-30 Semiconductor Components Industries, Llc Method of making an electrode contact structure and structure therefor
US8778764B2 (en) 2012-07-16 2014-07-15 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device having a shield electrode structure and structure therefor
CN103887342B (en) * 2014-04-10 2018-11-02 矽力杰半导体技术(杭州)有限公司 Groove MOSFET and preparation method thereof
US9269779B2 (en) 2014-07-21 2016-02-23 Semiconductor Components Industries, Llc Insulated gate semiconductor device having a shield electrode structure
DE102015210923B4 (en) * 2015-06-15 2018-08-02 Infineon Technologies Ag Semiconductor device with reduced emitter efficiency and method of manufacture
JP6317727B2 (en) * 2015-12-28 2018-04-25 株式会社東芝 Semiconductor device
JP6322253B2 (en) * 2016-10-12 2018-05-09 ローム株式会社 Wireless power supply apparatus and AC / DC power supply circuit having high-speed switching operation circuit
CN107170820B (en) * 2017-03-29 2020-04-14 西安电子科技大学 Current aperture heterojunction device of arc-shaped gate-drain composite field plate
CN107170804B (en) * 2017-03-29 2020-06-16 西安电子科技大学 Heterojunction field effect transistor with current aperture and current aperture of composite source field plate
TWI722166B (en) * 2017-04-10 2021-03-21 聯穎光電股份有限公司 High electron mobility transistor
CN108336129B (en) * 2018-01-12 2021-09-21 中国科学院微电子研究所 Super junction Schottky diode and manufacturing method thereof
JP6496063B2 (en) * 2018-04-06 2019-04-03 ローム株式会社 Switching power supply circuit and switching element
JP7077251B2 (en) * 2019-02-25 2022-05-30 株式会社東芝 Semiconductor device
JP6735375B2 (en) * 2019-03-07 2020-08-05 ローム株式会社 Switching power supply circuit and switching element
JP7106476B2 (en) * 2019-03-19 2022-07-26 株式会社東芝 Semiconductor device and its manufacturing method
JP7381335B2 (en) * 2019-12-26 2023-11-15 株式会社東芝 semiconductor equipment
JP7161582B2 (en) * 2020-07-13 2022-10-26 ローム株式会社 switching element
EP4210109A1 (en) * 2022-01-11 2023-07-12 Nexperia B.V. Silicon chip package structure and method of manufacturing thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03211885A (en) * 1990-01-17 1991-09-17 Matsushita Electron Corp Semiconductor device and manufacture thereof
US20010003367A1 (en) * 1998-06-12 2001-06-14 Fwu-Iuan Hshieh Trenched dmos device with low gate charges
US6621121B2 (en) * 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
JP4528460B2 (en) * 2000-06-30 2010-08-18 株式会社東芝 Semiconductor element
US6573558B2 (en) * 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
AU2003228073A1 (en) * 2002-05-31 2003-12-19 Koninklijke Philips Electronics N.V. Trench-gate semiconductor device,corresponding module and apparatus ,and method of operating the device

Also Published As

Publication number Publication date
CN1886835A (en) 2006-12-27
CN100546045C (en) 2009-09-30
EP1692726A2 (en) 2006-08-23
JP2007512700A (en) 2007-05-17
WO2005053032A3 (en) 2005-08-25
WO2005053032A2 (en) 2005-06-09
US20070126055A1 (en) 2007-06-07

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