JPH03211885A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPH03211885A
JPH03211885A JP2007470A JP747090A JPH03211885A JP H03211885 A JPH03211885 A JP H03211885A JP 2007470 A JP2007470 A JP 2007470A JP 747090 A JP747090 A JP 747090A JP H03211885 A JPH03211885 A JP H03211885A
Authority
JP
Japan
Prior art keywords
groove
formed
film
sidewall
bottom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007470A
Inventor
Masahiko Miyano
Toshihiko Uno
Original Assignee
Matsushita Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electron Corp filed Critical Matsushita Electron Corp
Priority to JP2007470A priority Critical patent/JPH03211885A/en
Publication of JPH03211885A publication Critical patent/JPH03211885A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Abstract

PURPOSE: To reduce a capacitance between the gate and the drain of a field effect transistor and to perform a high speed operation by increasing the thickness of an insulating film in the bottom of a groove thicker than that of an insulating film of the sidewall of the groove.
CONSTITUTION: An oxide film 21 formed in a bottom of a groove of a thermal oxide film formed in a groove is formed thicker than an oxide film 2 formed on the sidewall of the groove. Thus, a capacity between a gate electrode 3 formed of polysilicon and a drain region 11 can be reduced. Since the film 21 of the bottom of the groove is formed thicker than the film 2 of the sidewall of the groove, a capacitance between the gate and the drain of a field effect transistor can be reduced, and a high speed operation can be performed.
COPYRIGHT: (C)1991,JPO&Japio
JP2007470A 1990-01-17 1990-01-17 Semiconductor device and manufacture thereof Pending JPH03211885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007470A JPH03211885A (en) 1990-01-17 1990-01-17 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007470A JPH03211885A (en) 1990-01-17 1990-01-17 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH03211885A true JPH03211885A (en) 1991-09-17

Family

ID=11666683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007470A Pending JPH03211885A (en) 1990-01-17 1990-01-17 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH03211885A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003015180A3 (en) * 2001-08-10 2003-11-06 Siliconix Inc Mis device having a trench gate electrode and method of making the same
JP2004507092A (en) * 2000-08-16 2004-03-04 フェアチャイルド セミコンダクター コーポレイション Thick oxide layer having a trench structure bottom in Silicon
US6849898B2 (en) 2001-08-10 2005-02-01 Siliconix Incorporated Trench MIS device with active trench corners and thick bottom oxide
WO2005053032A3 (en) * 2003-11-29 2005-08-25 Koninkl Philips Electronics Nv Trench insulated gate field effect transistor
US7009247B2 (en) 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7028139B1 (en) 2003-07-03 2006-04-11 Veritas Operating Corporation Application-assisted recovery from data corruption in parity RAID storage using successive re-reads
US7033876B2 (en) 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
JP2007242943A (en) * 2006-03-09 2007-09-20 Fuji Electric Device Technology Co Ltd Process for fabrication of mos semiconductor device
US7291884B2 (en) 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
JP2008004686A (en) * 2006-06-21 2008-01-10 Denso Corp Method of manufacturing semiconductor device
US7494876B1 (en) 2005-04-21 2009-02-24 Vishay Siliconix Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same
US7868381B1 (en) 2002-03-22 2011-01-11 Vishay-Siliconix Structures of and methods of fabricating trench-gated MIS devices
US8598654B2 (en) 2011-03-16 2013-12-03 Fairchild Semiconductor Corporation MOSFET device with thick trench bottom oxide
JP2014045223A (en) * 2011-04-12 2014-03-13 Denso Corp Semiconductor device manufacturing method
US9136335B2 (en) 2011-04-12 2015-09-15 Denso Corporation Semiconductor device having a trench gate structure and manufacturing method of the same
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9577089B2 (en) 2010-03-02 2017-02-21 Vishay-Siliconix Structures and methods of fabricating dual gate devices
US10234486B2 (en) 2014-08-19 2019-03-19 Vishay/Siliconix Vertical sense devices in vertical trench MOSFET

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01192175A (en) * 1988-01-27 1989-08-02 Hitachi Ltd Semiconductor device
JPH02102579A (en) * 1988-10-12 1990-04-16 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01192175A (en) * 1988-01-27 1989-08-02 Hitachi Ltd Semiconductor device
JPH02102579A (en) * 1988-10-12 1990-04-16 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004507092A (en) * 2000-08-16 2004-03-04 フェアチャイルド セミコンダクター コーポレイション Thick oxide layer having a trench structure bottom in Silicon
US7291884B2 (en) 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US7033876B2 (en) 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7326995B2 (en) 2001-07-03 2008-02-05 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US7435650B2 (en) 2001-07-03 2008-10-14 Siliconix Incorporated Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxide
US7009247B2 (en) 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7416947B2 (en) 2001-07-03 2008-08-26 Siliconix Incorporated Method of fabricating trench MIS device with thick oxide layer in bottom of trench
US6903412B2 (en) 2001-08-10 2005-06-07 Siliconix Incorporated Trench MIS device with graduated gate oxide layer
US6849898B2 (en) 2001-08-10 2005-02-01 Siliconix Incorporated Trench MIS device with active trench corners and thick bottom oxide
US6875657B2 (en) 2001-08-10 2005-04-05 Siliconix Incorporated Method of fabricating trench MIS device with graduated gate oxide layer
WO2003015180A3 (en) * 2001-08-10 2003-11-06 Siliconix Inc Mis device having a trench gate electrode and method of making the same
US7868381B1 (en) 2002-03-22 2011-01-11 Vishay-Siliconix Structures of and methods of fabricating trench-gated MIS devices
US9324858B2 (en) 2002-03-22 2016-04-26 Vishay-Siliconix Trench-gated MIS devices
US7234024B1 (en) 2003-07-03 2007-06-19 Veritas Operating Corporation Application-assisted recovery from data corruption in parity RAID storage using successive re-reads
US7028139B1 (en) 2003-07-03 2006-04-11 Veritas Operating Corporation Application-assisted recovery from data corruption in parity RAID storage using successive re-reads
WO2005053032A3 (en) * 2003-11-29 2005-08-25 Koninkl Philips Electronics Nv Trench insulated gate field effect transistor
US7494876B1 (en) 2005-04-21 2009-02-24 Vishay Siliconix Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same
JP2007242943A (en) * 2006-03-09 2007-09-20 Fuji Electric Device Technology Co Ltd Process for fabrication of mos semiconductor device
JP2008004686A (en) * 2006-06-21 2008-01-10 Denso Corp Method of manufacturing semiconductor device
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9893168B2 (en) 2009-10-21 2018-02-13 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US9577089B2 (en) 2010-03-02 2017-02-21 Vishay-Siliconix Structures and methods of fabricating dual gate devices
US8598654B2 (en) 2011-03-16 2013-12-03 Fairchild Semiconductor Corporation MOSFET device with thick trench bottom oxide
JP2014045223A (en) * 2011-04-12 2014-03-13 Denso Corp Semiconductor device manufacturing method
US9171906B2 (en) 2011-04-12 2015-10-27 Denso Corporation Semiconductor device having a trench gate structure and manufacturing method of the same
US9136335B2 (en) 2011-04-12 2015-09-15 Denso Corporation Semiconductor device having a trench gate structure and manufacturing method of the same
US10234486B2 (en) 2014-08-19 2019-03-19 Vishay/Siliconix Vertical sense devices in vertical trench MOSFET

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