JP7352360B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7352360B2 JP7352360B2 JP2019022693A JP2019022693A JP7352360B2 JP 7352360 B2 JP7352360 B2 JP 7352360B2 JP 2019022693 A JP2019022693 A JP 2019022693A JP 2019022693 A JP2019022693 A JP 2019022693A JP 7352360 B2 JP7352360 B2 JP 7352360B2
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- 239000004065 semiconductor Substances 0.000 title claims description 126
- 239000012535 impurity Substances 0.000 claims description 37
- 230000005684 electric field Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/0856—Source regions
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Description
図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既に説明したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
以下の説明及び図面において、n+、n-及びp+、pの表記は、各不純物濃度の相対的な高低を表す。すなわち、「+」が付されている表記は、「+」及び「-」のいずれも付されていない表記よりも不純物濃度が相対的に高く、「-」が付されている表記は、いずれも付されていない表記よりも不純物濃度が相対的に低いことを示す。これらの表記は、それぞれの領域にp形不純物とn形不純物の両方が含まれている場合には、それらの不純物が補償しあった後の正味の不純物濃度の相対的な高低を表す。
以下で説明する各実施形態について、各半導体領域のp形とn形を反転させて各実施形態を実施してもよい。
実施形態に係る半導体装置100は、例えばMOSFETである。半導体装置100は、図1に表したように、n-形(第1導電形)ドリフト領域1(第1半導体領域)、p形(第2導電形)ベース領域2(第2半導体領域)、n+形ソース領域3(第3半導体領域)、p+形コンタクト領域4、n+形ドレイン領域5、導電部10、ゲート電極20、ドレイン電極41(第1電極)、及びソース電極42(第2電極)を有する。
ソース電極42に対してドレイン電極41に正の電圧が印加された状態で、ゲート電極20に閾値以上の電圧を印加する。これにより、p形ベース領域2にチャネル(反転層)が形成され、半導体装置100がオン状態となる。電子は、このチャネルを通ってソース電極42からドレイン電極41へ流れる。その後、ゲート電極20に印加される電圧が閾値よりも低くなると、p形ベース領域2におけるチャネルが消滅し、半導体装置100がオフ状態になる。
n-形ドリフト領域1、p形ベース領域2、n+形ソース領域3、p+形コンタクト領域4、及びn+形ドレイン領域5は、半導体材料として、シリコン、炭化シリコン、窒化ガリウム、またはガリウムヒ素を含む。半導体材料としてシリコンが用いられる場合、n形不純物として、ヒ素、リン、またはアンチモンを用いることができる。p形不純物として、ボロンを用いることができる。
導電部10及びゲート電極20は、ポリシリコンなどの導電材料を含む。導電材料には、不純物が添加されていても良い。
第1絶縁部31、第2絶縁部32、絶縁部33、ゲート絶縁部34、及び絶縁部35は、酸化シリコンなどの絶縁材料を含む。
ドレイン電極41及びソース電極42は、アルミニウムなどの金属を含む。
まず、半導体基板Sを用意する。半導体基板Sは、n+形半導体領域5aと、n+形半導体領域5aの上に設けられたn-形半導体領域1aと、を有する。n-形半導体領域1aの上面にY方向に延びる複数のトレンチTを形成する。半導体基板Sの熱酸化により、図2(a)に表したように、n-形半導体領域1aの上面及びトレンチTの内面に沿って、絶縁層31aを形成する。
図4を参照しつつ、実施形態の効果を説明する。図4(a)及び図4(c)は、参考例に係る半導体装置100r1の一部及び100r2の一部をそれぞれ表す。図4(b)及び図4(d)は、それぞれ半導体装置100r1及び100r2の特性を表す。具体的には、図4(b)及び図4(d)は、導電部10及びゲート電極20を囲む第1絶縁部31とn-形ドリフト領域1との界面Bにおける、Z方向における位置Pと電界強度Eとの関係をそれぞれ表す。
導電部10及びゲート電極20は、n形不純物とp形不純物の両方を含んでいても良い。この場合、それらの不純物が補償しあった後の正味の不純物濃度を、導電部10及びゲート電極20のそれぞれにおける不純物濃度とする。
図5は、実施形態の変形例に係る半導体装置の一部を表す断面図である。
図5(a)に表した半導体装置110では、導電部10は、X方向において互いに離れた第1導電部分11及び第2導電部分12のみを有する。導電部10は、第3導電部分13を有していない。半導体装置110によれば、半導体装置100に比べて、導電部10の電気抵抗をさらに大きくできる。これにより、ターンオフ時のノイズをさらに低減できる。
Claims (5)
- 第1電極と、
前記第1電極の上に設けられ、前記第1電極と電気的に接続された第1導電形の第1半導体領域と、
前記第1半導体領域の上に設けられた第2導電形の第2半導体領域と、
前記第2半導体領域の上に選択的に設けられた第1導電形の第3半導体領域と、
前記第1電極から前記第1半導体領域へ向かう第1方向に垂直な第2方向においてそれぞれの上端が互いに離れた第1導電部分及び第2導電部分と、前記第1導電部分の下端と前記第2導電部分の下端とをつなぐ第3導電部分と、を有し、前記第1半導体領域中に第1絶縁部を介して設けられた導電部と、
前記導電部の上に第2絶縁部を介して設けられ、前記第2方向において、前記第1半導体領域の一部、前記第2半導体領域、及び前記第3半導体領域と、ゲート絶縁部を介して対向するゲート電極と、
前記第2半導体領域、前記第3半導体領域、及び前記ゲート電極の上に設けられ、前記第2半導体領域、前記第3半導体領域、及び前記導電部と電気的に接続された第2電極と、
を備えた半導体装置。 - 前記第1導電部分の前記第1方向における長さは、前記第1導電部分の前記第2方向における長さよりも長く、
前記第2導電部分の前記第1方向における長さは、前記第2導電部分の前記第2方向における長さよりも長い請求項1記載の半導体装置。 - 前記導電部は、前記第2方向において互いに離れた第4導電部分及び第5導電部分をさらに有し、
前記第1導電部分及び前記第2導電部分は、前記第4導電部分及び前記第5導電部分の上にそれぞれ設けられ、前記第4導電部分及び前記第5導電部分から離れた請求項1記載の半導体装置。 - 前記導電部は、前記第4導電部分の下端と前記第5導電部分の下端とをつなぐ第6導電部分をさらに有する請求項3記載の半導体装置。
- 前記導電部及び前記ゲート電極は、不純物を含み、
前記導電部における不純物濃度は、前記ゲート電極における不純物濃度よりも低い請求項1~4のいずれか1つに記載の半導体装置。
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Citations (7)
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JP2006324570A (ja) | 2005-05-20 | 2006-11-30 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2007529115A (ja) | 2003-12-30 | 2007-10-18 | フェアチャイルド・セミコンダクター・コーポレーション | パワー半導体デバイスおよびその製造方法 |
US20080179670A1 (en) | 2007-01-29 | 2008-07-31 | Infineon Technologies Austria Ag | Component arrangement including a mos transistor having a field electrode |
US20120313161A1 (en) | 2011-06-13 | 2012-12-13 | Grivna Gordon M | Semiconductor device with enhanced mobility and method |
JP2013229382A (ja) | 2012-04-24 | 2013-11-07 | Toyota Motor Corp | 半導体装置 |
JP2016152357A (ja) | 2015-02-18 | 2016-08-22 | 株式会社東芝 | 半導体装置および半導体パッケージ |
WO2016132552A1 (ja) | 2015-02-20 | 2016-08-25 | 新電元工業株式会社 | 半導体装置 |
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2019
- 2019-02-12 JP JP2019022693A patent/JP7352360B2/ja active Active
- 2019-05-20 US US16/416,441 patent/US20200259011A1/en not_active Abandoned
Patent Citations (7)
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