JP4903055B2 - パワー半導体デバイスおよびその製造方法 - Google Patents
パワー半導体デバイスおよびその製造方法 Download PDFInfo
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- JP4903055B2 JP4903055B2 JP2006547577A JP2006547577A JP4903055B2 JP 4903055 B2 JP4903055 B2 JP 4903055B2 JP 2006547577 A JP2006547577 A JP 2006547577A JP 2006547577 A JP2006547577 A JP 2006547577A JP 4903055 B2 JP4903055 B2 JP 4903055B2
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title abstract description 24
- 239000000463 material Substances 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 abstract description 290
- 230000008569 process Effects 0.000 abstract description 159
- 239000000758 substrate Substances 0.000 abstract description 77
- 230000015572 biosynthetic process Effects 0.000 abstract description 36
- 238000012545 processing Methods 0.000 abstract description 18
- 230000006872 improvement Effects 0.000 abstract description 13
- 230000003071 parasitic effect Effects 0.000 abstract description 12
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 237
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 104
- 229910052710 silicon Inorganic materials 0.000 description 104
- 239000010703 silicon Substances 0.000 description 104
- 238000005530 etching Methods 0.000 description 77
- 230000009977 dual effect Effects 0.000 description 49
- 108091006146 Channels Proteins 0.000 description 47
- 230000015556 catabolic process Effects 0.000 description 45
- 208000024875 Infantile dystonia-parkinsonism Diseases 0.000 description 41
- 208000001543 infantile parkinsonism-dystonia Diseases 0.000 description 41
- 230000005684 electric field Effects 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 36
- 239000002184 metal Substances 0.000 description 36
- 238000010586 diagram Methods 0.000 description 34
- 238000005755 formation reaction Methods 0.000 description 33
- 230000003647 oxidation Effects 0.000 description 27
- 238000007254 oxidation reaction Methods 0.000 description 27
- 238000009792 diffusion process Methods 0.000 description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 26
- 229920005591 polysilicon Polymers 0.000 description 26
- 230000000903 blocking effect Effects 0.000 description 25
- 150000004767 nitrides Chemical class 0.000 description 24
- 230000002829 reductive effect Effects 0.000 description 24
- 230000008901 benefit Effects 0.000 description 21
- 238000000151 deposition Methods 0.000 description 20
- 238000009825 accumulation Methods 0.000 description 19
- 238000007667 floating Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 17
- 230000008021 deposition Effects 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 14
- 229910052731 fluorine Inorganic materials 0.000 description 14
- 239000011737 fluorine Substances 0.000 description 14
- 230000006870 function Effects 0.000 description 14
- 229910021332 silicide Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000000460 chlorine Substances 0.000 description 13
- 238000001514 detection method Methods 0.000 description 13
- 230000002441 reversible effect Effects 0.000 description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- 230000006641 stabilisation Effects 0.000 description 12
- 238000011105 stabilization Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 210000000746 body region Anatomy 0.000 description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 10
- 230000033228 biological regulation Effects 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 9
- 238000011049 filling Methods 0.000 description 9
- 230000036961 partial effect Effects 0.000 description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 8
- 238000003486 chemical etching Methods 0.000 description 8
- 229910052801 chlorine Inorganic materials 0.000 description 8
- 238000005498 polishing Methods 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 230000003750 conditioning effect Effects 0.000 description 7
- 230000001276 controlling effect Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 239000007943 implant Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000012536 packaging technology Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 230000001360 synchronised effect Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 241000293849 Cordylanthus Species 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 208000032750 Device leakage Diseases 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 235000015847 Hesperis matronalis Nutrition 0.000 description 1
- 240000004533 Hesperis matronalis Species 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- MPTQRFCYZCXJFQ-UHFFFAOYSA-L copper(II) chloride dihydrate Chemical compound O.O.[Cl-].[Cl-].[Cu+2] MPTQRFCYZCXJFQ-UHFFFAOYSA-L 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Description
本出願は、以下の仮出願された米国特許出願の利益を主張するものである。
終端構造
上記のさまざまなタイプの個別デバイスは、チップ端の空乏領域の円柱状または球状の形状によって制限された降伏電圧を有する。この円柱状または球状の降伏電圧は、通常、デバイスのアクティブエリア(active area)における平行面降伏電圧BVppよりもかなり低いので、デバイスの端部は、アクティブエリアの降伏電圧に近い、デバイスに対する降伏電圧を実現するように終端処理される必要がある。異なる技術は、端部の末端上に均一に電界および電圧を拡散するように開発されており、BVppに近い降伏電圧を実現している。これらは、フィールドプレート,フィールドリング,ジャンクションターミネーションエクステンション(JTE)およびこれらの技術の異なる組み合わせを含む。既に参照された、Moなどによる自己の米国特許第6,429,481号は、アクティブセルアレイを取り囲み、その上を覆うフィールド酸化膜層(overlying field oxide layer)を有する深い接合(井戸よりも深い)を有する電界終端構造の1つの例を説明している。nチャンネルトランジスタの場合において、例えば、終端構造は、n型ドリフト領域とともにPN接合を形成する深いp+領域を含む。
加工技術
従って、複数の埋め込み電極またはダイオードを有するトレンチ構造を含む、多くの異なるデバイスが説明されている。これらのトレンチ電極にバイアスをかけるために、これらのデバイスは、電気接触が各埋め込み層に作製されることを許容する。埋め込み電極を有するトレンチ構造を形成する多くの方法およびトレンチの内側で埋め込みポリ層に接触を作製する多くの方法が、本明細書で説明されている。1つの実施例において、トレンチポリ層に対する接触はチップの端部で構成される。図30Aは、2つのポリ層3010および3020を有するトレンチデバイス3000に対する端部接触の1つの例を示している。図30Aは、トレンチの縦軸に沿った断面図を示している。トレンチがチップの端部近辺で終結しているこの実施例によると、ポリ層3010および3020は、接触を目的として基板表面まできている。誘電体層3030および3040における開口3012および3022は、ポリ層に対する金属接触を可能にする。図30Bおよび図30Fは、図30Aの端部接触構造を形成することを含む、さまざまな加工工程を示している。図30Bにおいて、誘電体(例えば二酸化ケイ素)層3001は、エピタキシャル層3006の最上面でパターン化され、基板の露出面は、トレンチ3002を形成するためにエッチングされる。その後、第1の酸化層3003が基板の上面にわたって形成され、図30Cに示されるようなトレンチを含むこととなる。その後、導電材料(例えばポリシリコン)3010の第1の層が図30Dに示されるように酸化層3003の表面上に形成される。図30Eを参照すると、ポリ層3010はトレンチの内部からエッチングされ、別の酸化層3030がポリ3010一面に形成される。図30Fに示されるような第2の酸化物−ポリ−酸化物サンドイッチを形成するために、同様の工程が実施される。ここで、最上面の酸化層3040は、金属接触層のための開口3012および3022を、ポリ層3010および3020のそれぞれに対して作製するためにエッチングされて示されている。最後の工程は、さらなるポリ層に対して繰り返され得る。ポリ層は、必要に応じて上にある金属層によってつなげられ得る。
フッ素をベースにした化学を酸素とともに使用するが、酸素は主要なエッチングステップの出発点からは取り除かれている。この工程の1つの例は、SF6を使用し、次にSF6/O2のステップが続けられる。エッチングの第1段階において、O2不足による側壁の安定化処理不足がある。このことは、トレンチの先端部で側方エッチングの量を増大させる結果をもたらす。その後、第2のエッチングステップSF6/O2が、トレンチ深さの残部のエッチングを続け、まっすぐなプロファイルおよび丸み付けられたトレンチ底部にする。このことは、時々T−トレンチとして言及される、先端部でより幅広いトレンチ構造をもたらす。T−トレンチ構造を使用するデバイスの例は、Robert Herrickによる「自動位置合わせ機能を有するトレンチMOSFETを形成する構造および方法」と表題が付けられた、同一出願人による米国特許出願第10/442,670号(代理人整理番号:18865−131/17732−66850)に詳細に説明されている。当該特許出願の内容全体は、本願に引用して援用される。2つの主要なエッチングステップに対する時間は、T−トレンチの各部分(T部分の先端,底部,まっすぐな側壁部)に対する所望のエッチングを実現するように調整され得る。付加的な処理は、T−トレンチの先端角部を丸み付けし且つトレンチの側壁を滑らかにするために使用され得る。これらの付加的な処理方法は、例えば、(1)トレンチのエッチングレシピの終わりのフッ素をベースにしたステップまたは(2)分離したエッチングシステムにおける分離したフッ素をベースにしたエッチングまたは(3)犠牲酸化物(sacrificial oxide)またはその他の組み合わせである。化学機械平坦化(CMP)のステップが、トレンチプロファイルの先端凹角部分を除去するために使用され得る。H2アニールも、丸み付けしたり、好ましいスロープトレンチプロファイルを作ることを補佐するために使用され得る。
回路アプリケーション
例えば、本願に説明されているさまざまなデバイスおよび工程方法によって与えられるように、デバイスのオン抵抗における劇的な低減のために、パワーデバイスによって占められるチップ面積は低減され得る。結果として、低い電圧ロジックおよび制御回路を有するこれらの高電圧デバイスのモノリシック集積化はより実現可能になる。通常の回路アプリケーションにおいて、パワートランジスタと同じチップ上に集積され得る機能のタイプは、電力制御,検出,保護およびインターフェース回路を含む。他の回路を有するパワーデバイスのモノリシック集積において考慮すべき重要なことは、高電圧パワーデバイスを低電圧ロジックまたは制御回路から電気的に絶縁するために使用される方法である。これを実現するための、接合分離,誘電体分離およびシリコン・オン・インシュレータ等を含む多くの周知方法がある。
を有するMOSFETが使用され得る。かかるDC−DCコンバータに対する他の実施例および改善は、Elbanhawvによる「DC−DCコンバータにおける損失を低減する方法および回路」と表題がつけられた、同一出願人による売国特許出願第10/222,481号(代理人整理番号第18865−91−1/17732−51430号)により詳細に説明されている。当該特許出願の内容全体は、本願に引用して援用される。
パッケージ技術
全てのパワー半導体デバイスに対して考慮すべき重要なことは、デバイスを回路に接続するために使用されるハウジングまたはパッケージである。半導体チップは、通常、例えば半田または金属が注入されたエポキシ接着剤のような金属ボンディング層を使用して、金属パッドに取り付けられる。ワイヤは、通常、チップの上面にボンディングされ、その後、モールドされた本体を通して突き出たリードにボンディングされる。その後、アセンブリが回路基板に実装される。ハウジングは、半導体チップ,電子装置およびその環境との間に電気的接続および熱接続の両方を与える。低い寄生抵抗,容量およびインダクタンスは、チップに対するより良好な界面を可能にするハウジングに対する、所望の電気的特徴である。
Claims (18)
- 半導体デバイスであって、
第1の導電型のドリフト領域と、
前記ドリフト領域の上に伸長し且つ前記第1の導電型と反対である第2の導電型を有する井戸領域と、
前記井戸領域を通って前記ドリフト領域中に伸長するアクティブトレンチと、
前記アクティブトレンチに隣接した、前記井戸領域に形成された前記第1の導電型を有するソース領域と、
前記アクティブトレンチより前記ドリフト領域中に深く伸長し且つ前記ドリフト領域において垂直電荷制御をする材料で満たされる電荷制御トレンチと、
を含み、前記アクティブトレンチは、誘電体で囲まれた側壁と底部とを有し、第1の導電層および第2の導電層で満たされており、前記第2の導電層は、ゲート電極を形成し、前記第1の導電層の上に配置され且つ電極間誘電体によって前記第1の導電層から分離されていることを特徴とする半導体デバイス。 - ソース電極は、前記電荷制御トレンチの内部の導電体を前記ソース領域に連結することを特徴とする請求項1記載の半導体デバイス。
- 前記電荷制御トレンチの内部には、互いに分離され且つ誘電体によって当該電荷制御トレンチの側壁から分離されて、垂直に積み重ねられた複数の導電層が配置されていることを特徴とする請求項1記載の半導体デバイス。
- 前記電荷制御トレンチの内部の前記複数の導電層は、前記ドリフト領域において垂直電荷調整を与えるために電気的にバイアスがかけられることを特徴とする請求項3記載の半導体デバイス。
- 前記電荷制御トレンチの内部の前記複数の導電層は、独立してバイアスがかけられるように構成されていることを特徴とする請求項4記載の半導体デバイス。
- 前記電荷制御トレンチの内部の前記複数の導電層の厚さは変動することを特徴とする請求項3記載の半導体デバイス。
- 前記電荷制御トレンチの内部のより深い位置にある第1の導電層の厚さは、前記第1の導電層の上に配された第2の導電層の厚さよりも薄いことを特徴とする請求項1記載の半導体デバイス。
- 前記アクティブトレンチの内部の前記第1の導電層は、所望の電位に電気的にバイアスされる第1のシールド電極を形成することを特徴とする請求項1記載の半導体デバイス。
- 前記第1の電導層および前記ソース領域は、同電位に電気的に連結されることを特徴とする請求項1記載の半導体デバイス。
- 前記電荷制御トレンチの内部の前記複数の導電層は、電気的に相互接続されていることを特徴とする請求項4記載の半導体デバイス。
- 前記複数の導電層の少なくとも1つが、前記ドリフト領域内にあることを特徴とする請求項4記載の半導体デバイス。
- 前記複数の導電層の少なくとも1つが、前記ドリフト領域近傍の前記電荷制御トレンチ内に位置していることを特徴とする請求項4記載の半導体デバイス。
- 前記複数の導電層の少なくとも1つが、前記井戸領域近傍の前記電荷制御トレンチ内に位置していることを特徴とする請求項4記載の半導体デバイス。
- 前記複数の導電層の少なくとも1つが、前記第2の電導型の高濃度の前記井戸領域内にあることを特徴とする請求項4記載の半導体デバイス。
- 前記複数の導電層の少なくとも1つが、前記井戸領域内にあることを特徴とする請求項4記載の半導体デバイス。
- 前記複数の導電層の少なくとも1つが、前記ドリフト領域及び前記井戸領域の双方の内にあることを特徴とする請求項4記載の半導体デバイス。
- 前記電荷制御トレンチは第1の電荷制御トレンチであり、
前記半導体デバイスは前記アクティブトレンチに隣接した第2の電荷制御トレンチをさらに含み、当該第2の電荷制御トレンチは前記アクティブトレンチを挟んで前記第1の電荷制御トレンチの反対側に位置し、
前記第2の電荷制御トレンチは、前記アクティブトレンチよりも前記ドリフト領域中へ深く伸長し且つ前記ドリフト領域内において垂直電荷制御をする材料で満たされることを特徴とする請求項1記載の半導体デバイス。 - 前記第1及び第2の電荷制御トレンチは、前記アクティブトレンチから等しい距離隔てられていることを特徴とする請求項17記載の半導体デバイス。
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US53379003P | 2003-12-30 | 2003-12-30 | |
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US60/588,845 | 2004-07-15 | ||
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Cited By (1)
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US11721732B2 (en) | 2021-08-18 | 2023-08-08 | Kabushiki Kaisha Toshiba | Semiconductor device with control electrodes provided in trenches of different widths |
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WO2005065385A2 (en) | 2005-07-21 |
JP2007529115A (ja) | 2007-10-18 |
CN103199017A (zh) | 2013-07-10 |
DE112004002608B4 (de) | 2015-12-03 |
CN101794817A (zh) | 2010-08-04 |
TWI404220B (zh) | 2013-08-01 |
CN102420241A (zh) | 2012-04-18 |
JP2008227514A (ja) | 2008-09-25 |
JP2012109580A (ja) | 2012-06-07 |
TW201308647A (zh) | 2013-02-16 |
KR20070032627A (ko) | 2007-03-22 |
DE112004002608T5 (de) | 2006-11-16 |
TW200840041A (en) | 2008-10-01 |
CN101180737A (zh) | 2008-05-14 |
TWI399855B (zh) | 2013-06-21 |
DE202004021352U8 (de) | 2008-02-21 |
TW200527701A (en) | 2005-08-16 |
DE202004021352U1 (de) | 2007-08-16 |
CN101180737B (zh) | 2011-12-07 |
TWI521726B (zh) | 2016-02-11 |
KR20120003019A (ko) | 2012-01-09 |
WO2005065385A3 (en) | 2006-04-06 |
DE112004003046B4 (de) | 2016-12-29 |
CN101794817B (zh) | 2013-04-03 |
CN103199017B (zh) | 2016-08-03 |
KR101216533B1 (ko) | 2013-01-21 |
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