CN106033781A - 肖特基势垒二极管及其制备方法 - Google Patents
肖特基势垒二极管及其制备方法 Download PDFInfo
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- CN106033781A CN106033781A CN201510114567.6A CN201510114567A CN106033781A CN 106033781 A CN106033781 A CN 106033781A CN 201510114567 A CN201510114567 A CN 201510114567A CN 106033781 A CN106033781 A CN 106033781A
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- conduction type
- schottky
- layer
- barrier diode
- epitaxial layer
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CN201510114567.6A CN106033781A (zh) | 2015-03-16 | 2015-03-16 | 肖特基势垒二极管及其制备方法 |
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CN201510114567.6A CN106033781A (zh) | 2015-03-16 | 2015-03-16 | 肖特基势垒二极管及其制备方法 |
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CN106033781A true CN106033781A (zh) | 2016-10-19 |
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CN201510114567.6A Pending CN106033781A (zh) | 2015-03-16 | 2015-03-16 | 肖特基势垒二极管及其制备方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150920A (ja) * | 1998-11-12 | 2000-05-30 | Nippon Telegr & Teleph Corp <Ntt> | ショットキ接合型半導体ダイオード装置の製法 |
WO2005065385A2 (en) * | 2003-12-30 | 2005-07-21 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US20070145414A1 (en) * | 2005-12-27 | 2007-06-28 | Richard Francis | Ultrafast recovery diode |
CN101517752A (zh) * | 2006-12-01 | 2009-08-26 | 万国半导体股份有限公司 | 具有浮岛的结势垒肖特基二极管 |
CN104124151A (zh) * | 2014-07-14 | 2014-10-29 | 中航(重庆)微电子有限公司 | 一种沟槽结构肖特基势垒二极管及其制作方法 |
-
2015
- 2015-03-16 CN CN201510114567.6A patent/CN106033781A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000150920A (ja) * | 1998-11-12 | 2000-05-30 | Nippon Telegr & Teleph Corp <Ntt> | ショットキ接合型半導体ダイオード装置の製法 |
WO2005065385A2 (en) * | 2003-12-30 | 2005-07-21 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US20070145414A1 (en) * | 2005-12-27 | 2007-06-28 | Richard Francis | Ultrafast recovery diode |
CN101517752A (zh) * | 2006-12-01 | 2009-08-26 | 万国半导体股份有限公司 | 具有浮岛的结势垒肖特基二极管 |
CN104124151A (zh) * | 2014-07-14 | 2014-10-29 | 中航(重庆)微电子有限公司 | 一种沟槽结构肖特基势垒二极管及其制作方法 |
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CB02 | Change of applicant information |
Address after: 401331 No. 25 Xiyong Avenue, Shapingba District, Chongqing Applicant after: China Aviation (Chongqing) Microelectronics Co., Ltd. Address before: 401331 No. 25 Xiyong Avenue, Xiyong Town, Shapingba District, Chongqing Applicant before: China Aviation (Chongqing) Microelectronics Co., Ltd. |
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 401331 No. 25 Xiyong Avenue, Shapingba District, Chongqing Applicant after: Huarun Microelectronics (Chongqing) Co., Ltd. Address before: 401331 No. 25 Xiyong Avenue, Shapingba District, Chongqing Applicant before: China Aviation (Chongqing) Microelectronics Co., Ltd. |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161019 |
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RJ01 | Rejection of invention patent application after publication |