CN100524692C - 在衬底上形成金属互连的方法 - Google Patents

在衬底上形成金属互连的方法 Download PDF

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CN100524692C
CN100524692C CNB2007101017141A CN200710101714A CN100524692C CN 100524692 C CN100524692 C CN 100524692C CN B2007101017141 A CNB2007101017141 A CN B2007101017141A CN 200710101714 A CN200710101714 A CN 200710101714A CN 100524692 C CN100524692 C CN 100524692C
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layer
metal
pulse
barrier layer
copper
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CN101174577A (zh
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陈岭
仲华
肖恩·M·瑟特尔
迈克尔·X·杨
奚明
文森特·库
吴典晔
艾伦·乌业
诺曼·纳卡希玛
巴里·金
张弘
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Applied Materials Inc
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Abstract

本发明提供了一种用于在衬底上形成金属互连的方法。一方面，本方法包括沉积含难熔金属的阻挡层，所述阻挡层的厚度小于2nm使得其呈现类晶体结构，并足以抑制至少一部分金属层上的原子迁移；通过交替地引入一次或多次含金属化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分阻挡层上沉积晶种层；并在至少一部分晶种层上沉积第二金属层来生成互连。

Description

在衬底上形成金属互连的方法
本申请是中国发明专利申请No.02821269.X(国际申请号：PCT/US02/34277，国际申请日：2002年10月25日)的分案申请。
技术领域
本发明的实施例涉及用于制备集成电路器件的方法。更具体地，本发明的实施例涉及利用一个或多个循环沉积工艺来形成金属互连结构。
背景技术
由于集成电路(IC)器件的结构尺寸按比例降至亚1/4微米的范围，所以电阻和电流密度已成为急需考虑并改善的因素。多层互连结构提供了贯穿IC器件的导电路径，其中的IC器件被形成在高宽比(aspect ratio)较高的构造(feature)中，包括接头、插塞、通孔、线(line)、导线和其他构造。在衬底(substrate)上形成互连的典型方法包括沉积一层或多层，蚀刻其中的至少一层来形成一个或多个构造，在构造中沉积阻挡层，并沉积一层或多层来填满构造。通常，构造在设置于下层导电层和上层导电层之间的介电层内形成。互连在构造内形成以连接上层导电层和下层导电层。可靠地形成这些互连构造对电路的生成，以及单个衬底和模片(die)上的电路密度和质量的提高是重要的。
近来，由于铜及其合金的电阻率小于铝，所以铜已成为填充亚微米、高宽比较高的互连构造的首选金属。但是，铜更容易扩散进周围的材料内，并能改变相邻层的电子器件特性(例如形成层间的导电路径)，从而降低了整个电路的可靠性，并可能导致器件损坏。
因此，在铜金属化之前沉积阻挡层来防止或阻碍铜原子的扩散。阻挡层通常含有难熔金属，例如钨、钛、钽及其氮化物，所有这些材料的电阻率都大于铜。为在构造内沉积阻挡层，阻挡层必须沉积在构造的底面及其侧壁上。因此，构造底部上的阻挡层的附加量不仅增加了构造的总电阻，而且成为多层互连结构的上层金属互连和下层金属互连之间的障碍。
因此，需要一种使互连的电阻最小的形成金属互连结构的改进方法。
发明内容
本发明提供了一种用于在衬底上形成金属互连的方法。一方面，本方法包括沉积含难熔金属的阻挡层，所述阻挡层的厚度呈现类晶体结构，并足以抑制至少一部分金属层上的原子迁移。通过交替地引入一次或多次含金属化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分阻挡层上沉积晶种层，并在至少一部分晶种层上沉积第二金属层来生成互连。
另一方面，本方法包括在衬底表面上沉积第一金属层；通过交替地引入一次或多次含钛化合物的脉冲、一次或多次含硅化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分第一金属层上沉积厚度小于约20埃的钛硅氮化物层；沉积双合金晶种层，并在至少一部分双合金晶种层上沉积第二金属层。
另一方面，本方法还包括在至少一部分金属层上沉积厚度小于约20埃的双层阻挡，沉积双合金晶种层，并在至少一部分双合金晶种层上沉积第二金属层。双层阻挡包括通过交替地引入一次或多次含钽化合物的脉冲和一次或多次含氮化合物的脉冲而沉积的第一氮化钽层和第二α相钽层。
另一方面，本方法包括在衬底表面上沉积第一金属层；通过交替地引入一次或多次含钽化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分第一金属层上沉积厚度小于约20埃的氮化钽阻挡层；沉积双合金晶种层，其包括铜和选自铝、镁、钛、锆、锡及其组合的金属；并在至少一部分双合金晶种层上沉积第二金属层。
附图说明
为能详细地获悉并理解本发明的上述特征，可参照在附图中所说明的其实施例，从而对以上简短概括的本发明进行更具体的描述。但是，应该注意附图仅说明了本发明的典型实施例，因此不应认为是限制其范围，因为本发明包括其他等效的实施例。
图1图示了根据这里所描述的各种实施例的处理工艺顺序。
图2A-2D是根据这里所描述的实施例的互连制备的不同阶段的示例性晶片的示意性横截面视图。
图3图示了根据这里所描述循环沉积技术用来形成薄阻挡层的示例性处理室200的示意性部分横截面。
图4图示了适于进行这里所描述的互连制备顺序的示例性集束工具的示意性平面图。
图5是其中具有根据这里所描述的沉积技术而沉积的氮化钛阻挡层的构造的透射电子显微镜(TEM)图像。
图6是表示多层互连结构的部分横截面视图的TEM图像。
具体实施方式
本发明提供了形成一个或多个互连结构的工艺过程序列。与现有技术的互连相比较，根据这里所描述的实施例而形成的互连结构具有更低的总电阻率和更好的电性能，尤其适用于制造存储器以及集成电路制备中用到的逻辑结构。所述互连结构的形成包括至少部分沉积在底层(underlying)金属层上的薄阻挡层、至少部分沉积在所述阻挡层上的晶种层、以及至少部分沉积在所述晶种层上的本体金属层的形成。这里所用的术语“互连”指集成电路内形成的任意导电路径。这里所用的术语“本体金属(bulkmetal)”指相对于用来形成互连结构所沉积的其他金属，这里沉积的金属量更大。
图1图示了根据本发明的实施例的工艺流程顺序。首先，例如如步骤480所示，薄阻挡层至少部分沉积在底层衬底表面上，例如下层金属互连或金属栅。根据这里所描述的循环层沉积技术进行阻挡层沉积，以便提供优异的阻挡性能，并允许底层金属层持续生长穿过阻挡层而进入上层金属互连或随后沉积的金属层内。一方面，阻挡层是含难熔金属层，例如钽、钛和钨，并且可包括难熔金属氮化物材料，例如氮化钽(TaN)。另一方面，阻挡层是TaN和α相钽的薄双层。另一方面，阻挡层还可以是由含难熔金属的化合物、含硅化合物和含氮化合物而形成的三元材料。阻挡层也可作为后续的金属化过程的润湿层、粘合层或胶层。
这里所用的“薄层”指沉积在衬底表面上的材料层，厚度约20埃或更少，例如约10A。阻挡层的厚度如此薄以致相邻的金属互连的电子能够隧穿过阻挡层。因此，阻挡层通过降低总电阻率，提供优良的器件可靠性从而显著提高了金属互连的电性能。
根据这里所述的循环沉积方法而沉积的薄阻挡层显示出外延生长的现象。换句话说，阻挡层呈现与底层相同或基本相同的结晶特性。结果，生长出的基本是单晶，使得阻挡层和底层之间的界面没有空隙形成。同样，随后沉积在阻挡层上的金属层呈现相同或基本相同的外延生长特性，即继续形成单晶。因此，在这个界面处没有生成空隙。所得的类似单晶的结构消除了空隙的形成，从而显著增加了器件的可靠性。单晶结构在仍能提供优异的阻挡性能的同时，还减小了互连的总电阻。而且，我们相信由于互连材料界面上相似且均匀的晶体取向，单晶的生长减小了对电迁移和应力迁移的敏感度。
这里所用的“循环沉积”指连续地引入两种或多种反应性化合物以在衬底表面上沉积出单层材料。这两种或多种反应性化合物是交替地引入处理室的反应区的。通过时间延迟来分开各种反应性化合物，以使每种化合物粘附在衬底表面上并/或在衬底表面上反应。一方面，第一前体或化合物A被脉冲输入反应区内后，进行第一时间延迟。接着，第二前体或化合物B被脉冲输入反应区内后，进行第二时间延迟。如果例如钛硅氮化物的三元材料是所期望的，则例如第三化合物(C)被定量/脉冲输入反应区内后，进行第三时间延迟。在每次时间延迟期间，例如氩气的惰性气体被引入处理室内，来清洗反应区或去除反应区的任意残留反应性化合物。或者，清洗气在整个沉积过程中可连续地流动，使得在反应性化合物脉冲输入之间的时间延迟期间仅有清洗气流动。反应性化合物被交替地脉冲输入，直至在衬底表面上形成所期望的膜或膜层厚度。
这里所用的“衬底表面”指在其上进行膜处理的任意衬底表面。例如，取决于应用，衬底表面可包括硅、硅氧化物、掺杂硅、锗、砷化镓、玻璃、蓝宝石和例如金属、金属氮化物、金属合金和其他导电材料的任意其他材料。衬底表面还可包括例如二氧化硅和碳掺杂硅氧化物的介电材料。
这里所用的“脉冲输入”或“定量输入”意指一定量的特定化合物被间歇地或非连续地引入处理室的反应区内。取决于脉冲的持续时间，每次脉冲内的特定化合物的量可随时间变化。每次脉冲的持续时间是可变的，这取决于许多因素，例如所用的处理室的体积容量、耦合到所述处理室的真空系统及特定化合物本身的挥发性/反应性。
术语“化合物”意在包括一种或多种前体、氧化剂、还原剂、反应物和催化剂，及其组合。术语“化合物”也意在包括一组化合物，例如当两种或多种化合物同时被引入处理装置时。例如，一组化合物可包括一种或多种催化剂，以及一种或多种前体。术语“化合物”还意在包括例如通过解离或离子化而呈活化态或激发态的一种或多种前体、氧化剂、还原剂、反应物、和催化剂，或其组合。
我们相信在衬底表面上物理吸附、吸附、吸收或化学吸附单层反应物所用的表面吸引力是自限式的，这是因为由于衬底表面具有有限个反应物可利用的位点，所以在给定脉冲期间仅有一个单层被沉积在衬底表面上。一旦有限个位点被反应物占据，则反应物的进一步沉积将受阻。可重复这个循环来达到所期望厚度的层。
仍参照图1，如步骤485所示的，晶种层至少部分沉积在阻挡层上。可利用任意传统沉积技术，例如化学气相沉积(CVD)、物理气相沉积(PVD)、电镀、或无电镀来沉积晶种层。优选地，晶种层保形地(conformally)沉积在底层阻挡层上，所形成的厚度在约100A-500A之间。一方面，晶种层是传统的铜晶种层。另一方面，晶种层是双合金晶种层。示例性的双合金晶种层包括：1)利用含有未掺杂的铜的目标材料而沉积的未掺杂的铜，2)利用含有约2.0原子百分比的铝的铜-铝目标材料而沉积的含有约2.0原子百分比的铝的铜合金，3)利用含有约2.0原子百分比的锡的铜-锡目标材料而沉积的含有约2.0原子百分比的锡的铜合金，及4)利用含有约2.0原子百分比的锆的铜-锆目标材料而沉积的含有约2.0原子百分比的锆的铜合金。
如步骤487所示的，本体金属层至少被部分沉积在晶种层上。也可利用任意传统沉积技术，例如化学气相沉积(CVD)、物理气相沉积(PVD)、电镀、或无电镀来沉积金属层。金属层优选包括任意导电材料，例如铝、铜、钨或其组合。
图2A-2D是在制备的不同阶段的示例性互连结构的示意图。图2A示出了其上形成有介电层112的底层金属层110。图2B示出了至少部分沉积在底层金属层110上的阻挡层130。底层金属层110可含有任意导电金属，例如铝、铜、钨或其组合，并且可形成为互连构造的一部分，例如插塞、通孔、接头、线、导线，而且还可作为金属栅电极的一部分。图2C示出了至少部分沉积在阻挡层130上的晶种层140，且图2D示出了至少部分沉积在晶种层140上的本体金属层142。
参照图2A，介电层112可以是任意介电材料，包括无论是目前已知的或是将要被发现的低介电常数的介电材料(k≤4.0)。例如，介电层112可以是硅的氧化物或碳掺杂的硅氧化物。利用传统的公知技术，介电层112已被蚀刻来形成其中的构造114。构造114可以是插塞、通孔、接头、线、导线、或任意其他互连元件。一般地，构造114具有垂直的侧壁116和底面118，其高宽比约4：1或更大，例如约6：1。底面118暴露出下层金属互连110的至少一部分。
参照图2B，阻挡层130保形地沉积在构造114的底面118及侧壁116上。优选地，通过向其内设置有衬底的反应区以约100sccm-1000sccm的流速在约1.0秒或更短的时段内提供一个或多个含钽化合物的脉冲，并以约100sccm-1000sccm的流速在约1.0秒或更短的时段内提供一个或多个含氮化合物的脉冲，阻挡层含有沉积厚度约20A或更薄的氮化钽，优选约10A。示例性含钽化合物包括：t-丁基亚氨基-三(二乙基氨基)钽(TBTDET)；五(乙基甲基氨基)钽(PEMAT)；五(二甲基氨基)钽(PDMAT)；五(二乙基氨基)钽(PDEAT)；t-丁基亚氨基-三(二乙基甲基氨基)钽(TBTMET)；t-丁基亚氨基-三(二甲基氨基)钽(TBTDMT)；二(环戊二烯基)钽化三氢((Cp)2TaH3)；二(甲基环戊二烯基)钽化三氢((CpMe)2TaH3)；其衍生物；及其组合。示例性含氮化合物包括：氨；肼；甲基肼；二甲基肼；t-丁基肼；苯肼；偶氮基异丁烷(azoisobutane)；叠氮基乙烷；其衍生物；及其组合。
应该理解，这些化合物或任意其他以上未列出的化合物在室温下可以是固体、液体或气体。例如，PDMAT在室温下是固体，而TBTDET在室温下是液体。因此，在引入处理室之前，非气相前体要经过升华或蒸发步骤，而这都是本领域公知的。如本领域公知的，例如氩气、氦气、氮气、氢气或其混合物的载气也可用来帮助将化合物输入处理室内。
按顺序进行每个脉冲输入，并伴随着速度在约200sccm-1000sccm之间的单独的非反应性气体流。单独的非反应性气体流可在每个反应性化合物的脉冲输入之间脉冲地输入，或者可在整个沉积过程中连续地引入单独的非反应性气体流。无论是脉冲的还是连续的，单独的非反应性气体流起到去除反应区的任意多余反应物的作用，从而防止反应性化合物进行不需要的气相反应，并且也起到去除处理室的任意反应副产物的作用，类似于清洗气。除了这些作用，连续的非反应性气体的单独流动帮助将反应性化合物脉冲地传输到衬底表面，类似于载气。这里所用的术语“非反应性气体”指不会参与金属层形成的一种气体或气体混合物。示例性的非反应性气体包括氩气、氦气、氮气、氢气或其组合。
“反应区”意在包括与正在被处理的衬底表面流体连接的任意空间。反应区可包括在气源和衬底表面之间的处理室内的任意空间。例如，反应区包括衬底设置在其中的定量阀下游的任意空间。
每次脉冲输入/定量输入的持续时间是可变的，并可被调节，例如可借此来适应处理室的体积容量及与其耦合的真空系统的容量。此外，化合物的定量输入时间可根据化合物的流速、化合物的压力、化合物的温度、定量阀的类型、所用控制装置的类型、及化合物在衬底表面上的吸附能力而变化。定量输入时间也可基于正被形成的层的类型和正被形成的器件的几何结构而变化。
一般地，每次脉冲输入的持续时间或“定量输入时间”一般为1.0秒或更少。但是，定量输入时间可在几微秒到几毫秒，到几秒，甚至到几分钟的范围内。一般，定量输入时间应足够长，从而为一定体积的化合物提供充足的时间吸附/化学吸附到衬底的整个表面上，并在其上形成化合物层。
图3图示了示例性处理室200的示意性部分横截面，该处理室能够利用循环层沉积、原子层沉积、数字化学气相沉积和快速化学气相沉积技术来形成阻挡层。术语“循环层沉积”、“原子层沉积”、“数字化学气相沉积”和“快速化学气相沉积”这里可互相交换地使用，指气相沉积技术，通过该技术两种或多种化合物被按顺序引入处理室的反应区内，并在衬底表面上沉积出薄层材料。这种处理室200可从位于加利福尼亚的圣克拉拉的应用材料公司获得，其简短说明如下。更详细的说明可在2001年12月21日提交的题为“Gas Delivery Apparatus and Method For AtomicLayer Deposition”的共同受让的美国专利申请No.10/032,284中找到，作为参考资料这里引用了其内容。
处理室200可被集成进集成处理平台内，例如也可从应用材料公司获得的EnduraTM平台。EnduraTM平台的细节在1999年11月30日提交的题为“Integrated Modular Processing Platform”的共同受让的美国专利申请No.09/451,628中有描述，作为参考资料这里引用了其内容。
参照图3，室200包括室体202和设置在其内的衬底支架212，室体202具有在其侧壁204中形成的条阀208。衬底支架212安装在提升电机214上，来升高和降低衬底支架212及设置在其上的衬底210。衬底支架212也可包括在处理过程中用来将衬底210固定在衬底支架212上的真空吸盘、静电吸盘、或夹持环。而且，可利用嵌入的加热元件，例如电阻加热器来加热衬底支架212，或可利用例如设置在衬底支架212上的加热灯的辐射热来加热衬底支架212。清洗环222可设置在衬底支架212上，从而限定出清洗通道224，其提供清洗气以防止在衬底210的周边部分上的沉积。
输气装置230设置在室体202的上部，用来向室200提供气，例如处理气和/或清洗气。真空装置278与抽吸通道279相连，用来抽空室200中的气体，并帮助维持室200的抽吸区266内所期望的压力或所期望的压力范围。
输气装置230包括室盖232，其具有在其中间部分内形成的膨胀通道234。室盖232还包括从膨胀通道234延伸到室盖232的周边部分的底面260。底面260的大小和形状可充分地覆盖设置在衬底支架212上的衬底210。膨胀通道234的内径从上部237向邻近室盖232的底面260的下部235逐渐增加。随着气体流过膨胀通道234，由于气体的膨胀，通过它流动的气体速度会减小。减小的气速降低了吹走吸附在衬底210的表面上的反应物的可能性。
输气装置230还包括至少两个具有一个或多个端口的高速启动阀242。至少一个阀242是每种反应性化合物专用的。例如，第一阀是含难熔金属的化合物专用的，例如钽和钛，而第二阀是含氮化合物专用的。如果希望三元材料，则第三阀是另一种化合物专用的。例如，如果硅化物是所期望的，则另一种化合物可以是含硅的化合物。
阀242可以是任意能够精确并重复地将短脉冲的化合物输入室体202内的阀。在某些情况下，阀242的开/关循环周期或脉冲可约为100毫秒或更短。阀242可由系统计算机直接控制，例如大型机，或由面向特定的室/应用的专用控制器来控制，例如在2001年3月7日提交的题为“ValveControl System For ALD Chamber”的共同待审的美国专利申请No.09/800,881中详细描述的可编程逻辑计算机(PLC)，作为参考资料这里引用了其内容。例如，阀242可以是电控(EC)阀，如日本Fujikin公司市售的部件号为FR-21-6.35UGF-APD的阀。
为方便控制并自动操作整个装置，集成处理装置可包括含有中央处理单元(CPU)142、存储器144和支持电路146的控制器140。CPU 142可以是一种任意形式的计算机处理器，其用在工业环境中来控制各种传动和压力。存储器144与CPU 142连接，可以是一种或多种容易获得的存储器，例如随机访问存储器(RAM)、只读存储器(ROM)、软盘、硬盘、或任意其他形式的数字存储器、本地或远程存储器。软件指令和数据可被编码，并存储在存储器144内，用来指示CPU 142。支持电路146也与CPU 142连接，用来以传统方式支持处理器142。支持电路146可包括缓存、电源、时钟电路、输入/输出电路、子系统等。
在具体实施例中，通过向衬底表面循环地引入PDMAT和氨而形成TaN阻挡层。为开始TaN层的循环沉积，例如氩气的载气/惰性气体被引入处理室200内以稳定其压力和温度。在沉积过程中允许载气连续地流动，使得仅有氩气在每种化合物的脉冲输入之间流动。在室内温度和压力已分别稳定在约200℃-300℃和约1Torr-5Torr之后，由气源238以约100sccm-400sccm的流速，脉冲时间约为0.6秒或更短来提供PDMAT的第一脉冲输入。然后由气源239以约200sccm-600sccm的流速，脉冲时间约为0.6秒或更短来提供氨的脉冲输入。
PDMAT和氨的脉冲输入之间可暂停约1.0秒或更短，优选暂停约0.5秒或更短，更优选暂停约0.1秒或更短。在各个方面，脉冲输入之间的时间减少至少提供了更高的处理量。结果，脉冲输入氨之后也暂停约1.0秒或更短，约0.5秒或更短，或者约0.1秒或更短。气源240通过各个阀242连续地提供在约100sccm-1000sccm之间流动的氩气，例如约100sccm-400sccm。一方面，当氨的脉冲进入时，PDMAT的脉冲可能仍在室内。一般，载气和/或抽吸排空的持续时间应足够长以防止在反应区中PDMAT和氨的脉冲混合在一起。
室压约1.0-5.0Torr时，加热器的温度维持在约100℃-300℃。优选地，沉积温度在约200℃-250℃之间。由PDMAT的脉冲输入、暂停、氨的脉冲输入和暂停组成的每个循环周期提供了每循环厚度在约0.3A-1.0A之间的钽氮化物层。可重复这个交替的顺序，直至达到所期望的厚度，即少于约20A，例如约10A。因此，该沉积方法需要10-70个循环周期，更具体地是20-30个循环周期。
另一方面，通过提供一个或多个含难熔金属的化合物的脉冲输入、一个或多个含氮化合物的脉冲输入及一个或多个含硅化合物的脉冲输入，沉积出厚度小于约20A(例如10A)的三元阻挡层。调节每次脉冲以提供所期望的组成、含硅量、厚度、密度和难熔金属-硅的氮化物层的阶梯覆盖(step coverage)。这里所用的“三元阻挡层”指包括三种主要元素的组合物的材料，例如钛、氮和硅。示例性的“三元阻挡层”也可包括钽、氮和硅。
在上述相同的工艺条件下，按顺序进行每次脉冲输入，并伴随有单独的载气/惰性气体流。单独的载气/惰性气体流可在每次反应性化合物的脉冲输入之间脉冲地引入，或者可在整个沉积工艺过程中连续地引入。
优选地，三元阻挡层含有钛硅氮化物。在这个实施例中，每个循环周期包括含钛化合物的脉冲输入、暂停、含硅化合物的脉冲输入、暂停、含氮化合物的脉冲输入和暂停。示例性的含钛化合物包括四(二甲基氨基)钛(TDMAT)、四(乙基甲基氨基)钛(TEMAT)、四(二乙基氨基)钛(TDEAT)、四氯化钛(TiCl4)、四碘化钛(TiI4)、四溴化钛(TiBr4)和其他钛的卤化物。示例性的含硅化合物包括硅烷、乙硅烷、甲基硅烷、二甲基硅烷、氯代硅烷(SiH3Cl)、二氯代硅烷(SiH2Cl2)和三氯代硅烷(SiHCl3)。示例性的含氮化合物包括：氨、肼；甲基肼；二甲基肼；t-丁基肼；苯肼；偶氮基异丁烷；叠氮基乙烷；其衍生物；及其组合。
为开始TixSiyN层的循环沉积，将氩气引入处理室200来稳定其中的压力和温度。这种单独的氩气流在整个沉积工艺过程中连续地流动，使得在每种化合物的脉冲输入之间仅有氩气流动。单独的氩气流以约100sccm-1000sccm流动，例如在约100sccm-400sccm之间。一方面，在室内温度和压力已分别稳定在约250℃和约2Torr之后，以约10sccm-1000sccm的流速，脉冲时间约为0.6秒或更短来提供TDMAT的脉冲输入。然后以约5sccm-500sccm的流速，脉冲时间约为1秒或更短来提供硅烷的脉冲输入。然后以约100sccm-5000sccm的流速，脉冲时间约为0.6秒或更短来提供氨的脉冲输入。
TDMAT和硅烷的脉冲输入之间可暂停约1.0秒或更短，优选暂停约0.5秒或更短，更优选暂停约0.1秒或更短。硅烷和氨的脉冲输入之间可暂停约1.0秒或更短，优选暂停约0.5秒或更短，更优选暂停约0.1秒或更短。脉冲输入氨之后也暂停约1.0秒或更短，约0.5秒或更短，或者约0.1秒或更短。一方面，当硅烷的脉冲进入时，TDMAT的脉冲可能仍在室内，且当氨的脉冲进入时，硅烷的脉冲可能仍在室内。
室压约1.0-5.0Torr下，加热器的温度维持在约100℃-300℃。由TDMAT的脉冲输入、暂停、硅烷的脉冲输入、暂停、氨的脉冲输入和暂停组成的每个循环周期提供了每循环厚度在约之间的钛硅氮化物层。可重复这个交替的工艺顺序，直至达到所期望的厚度，即少于约
Figure C200710101714D00162
列如约
Figure C200710101714D00163
因此，该沉积方法需要10-70个循环周期。
另一方面，厚度约为
Figure C200710101714D00164
或更少，例如约
Figure C200710101714D00165
的α相钽(α-Ta)层可沉积在至少一部分已先沉积的二元层(TaN)或三元层(TiSiN)上。可利用传统技术，例如PVD和CVD来沉积α-Ta层，以形成双层叠层。例如，双层叠层可包括通过上述循环层沉积而沉积的TaN部分，和通过高密等离子物理气相沉积(HDP-PVD)而沉积的α-Ta部分。相对于β相钽，由于α相钽的电阻较低，所以α相是优选的。
进一步说明，叠层的α-Ta部分可利用离子化金属等离子(IMP)室沉积，例如可从加利福尼亚的圣克拉拉的应用材料公司获得的VectraTM室。IMP室包括目标材料、线圈和偏置衬底支架部件，并也可被集成进也可从应用材料公司获得的EnduraTM平台内。约0.5kW-5kW的功率应用在目标材料上，约0.5kW-3kW的功率应用在线圈上。频率约13.56MHz，约200W-500W的功率还应用在衬底支架部件以使衬底偏置。氩气以约35sccm-85sccm的速率流进室内，并以约5sccm-100sccm的速率向室内加入氮气。室压通常在约5mTorr-100mTorr之间，而室温在约20℃-300℃之间。
上述阻挡层膜可从后沉积处理工艺中受益，例如等离子处理工艺或化学处理工艺。等离子处理工艺可降低电阻，提高产率。典型的等离子处理可包括氩等离子、氮等离子、或氮和氢等离子。等离子处理可在发生阻挡层沉积的同一沉积室中或不同的室中进行。如果等离子处理在同一室中发生，则等离子体可以是原位等离子体或由远程等离子源发送的等离子体，例如远程感应耦合源或微波源。
虽然不希望被理论所限，但我们相信例如氮化钽膜的等离子处理通过喷溅出氮而降低了一个或多个亚层的氮含量，从而降低了电阻率。例如，我们认为相对于非等离子处理过的氮化钽层，等离子处理使得氮化钽层含有更多的钽。换句话说，利用等离子处理工艺，1：1的Ta：N膜可转变为2：1的Ta：N膜。可获得对于0.004微米(40埃)厚的膜，其层电阻约等于1200微欧姆厘米或更低的氮化钽膜。
因此，其他非化学反应性气体可用来从阻挡层物理地置换氮，例如氖气(Ne)、氙气(Xe)、氦气(He)和氢气(H2)。一般地，为了优先喷射出N，更希望等离子气体原子或分子的原子质量接近N的原子质量，而不是接近Ta。但是，如果特定气体优先进行反应来去除N，而留下Ta时，则可利用化学反应工艺过程。
化学处理工艺过程也能降低电阻，提高产率。典型的化学处理可包括暴露于铝化合物或硅化合物。这些化合物可包括但不限于DMAH、TMA、硅烷、二甲基硅烷、三甲基硅烷和其他有机硅烷化合物。化学处理通常在约1Torr-10Torr的压力下、约200℃-400℃的温度下进行。化学处理之后，已观察到根据上述方法沉积的氮化钽膜相对于未进行化学处理的膜，其去湿能力得以改善。
后续沉积处理工艺过程可在形成阻挡层之后进行。或者，该处理可在各个单层的沉积之间进行，或在每个循环周期的沉积之间进行。例如，处理工艺过程可在每形成约0.003-0.005微米(30-50埃)的层之后进行，或在约每7-10个循环周期后进行。
而且，在沉积阻挡层130之前，可清洗已图案化的或蚀刻过的衬底介电层112来去除表面的自然氧化物或其他污染物。例如，在远程等离子源(例如可从位于加利福尼亚的圣克拉拉的应用材料公司获得的反应预清洗室)内，反应性气体被激发成等离子体。通过将远程等离子源连接到金属CVD或PVD室，也可在这些室内完成预清洗。或者，具有输气装置的金属沉积室可改为通过现有的气体入口(例如位于衬底上方的气体分配喷头)来传送预清洗气体等离子体。
一方面，反应预清洗工艺过程形成来自一种或多种反应性气体的等离子体的自由基，例如氩气、氦气、氢气、氮气、含氟化合物及其组合。例如，反应性气体可包括四氟化碳(CF4)和氧气(O2)的混合物，或氦气(He)和三氟化氮(NF3)的混合物。更优选地，反应性气体是氦气和三氟化氮的混合物。
氩气等离子处理之后，室压增加到约140mTorr，基本由氢气和氦气组成的处理气体被引入处理区。优选地，这种处理气体包括约5％的氢气和约95％的氦气。通过应用约50瓦-500瓦的功率来产生氢等离子体。将氢等离子体维持约10秒-300秒。
再参照图2C，可利用高密等离子物理气相沉积(HDP-PVD)来沉积晶种层140，以能实现较好的保形覆盖。HDP-PVD室的一个实例是可从加利福尼亚的圣克拉拉的应用材料公司获得的自离子化等离子SIPTM室，可将其集成进从应用材料公司获得的EnduraTM平台。当然，也可利用其他技术，例如物理气相沉积、化学气相沉积、无电镀和电镀。
典型的SIPTM室包括目标材料、线圈和偏置衬底支架部件。为形成铜晶种层，约0.5kW-5kW的功率应用在目标材料上，约0.5kW-3kW的功率应用在线圈上。并应用频率约13.56MHz下约200W-500W的功率来偏置衬底。氩气以约35sccm-85sccm的速率流进室内，并以约5sccm-100sccm的速率向室内加入氮气。室压通常在约5mTorr-100mTorr之间。
或者，可通过任意合适技术，例如物理气相沉积、化学气相沉积、无电沉积或其组合技术，来沉积含有铜合金的晶种层140。优选地，铜合金晶种层140含有铝，且是利用上述PVD技术沉积的。在沉积过程中，处理室的压力维持在约0.1mtorr-10mtorr之间。目标材料包括铜和原子重量百分比在约2-10之间的铝。目标材料可以是在约5kW-100kW的功率下直流偏置的。支架可以是在约10W-1000W的功率下射频偏置的。铜合金晶种层140的沉积厚度至少约
Figure C200710101714D00181
且在约
Figure C200710101714D00182
之间。
参照图2D，可利用化学气相沉积(CVD)、物理气相沉积(PVD)、电镀或其组合来形成金属层142。例如，由含有二甲基氢化铝(DMAH)和氢气(H2)或氩气(Ar)的气体混合物或其他含DMAH的混合物的反应可沉积铝(Al)层，由含有Cu+2(hfac)2(六氟乙酰丙酮铜)、Cu+2(fod)2(七氟二甲基辛二烯烃铜)、Cu+1hfac TMVS(六氟乙酰丙酮铜三甲基乙烯基硅烷)或其组合的气体混合物可沉积CVD铜层，并且由含有六氟化钨(WF6)和还原气体的气体混合物可沉积CVD钨层。由铜目标材料、铝目标材料或钨目标材料可沉积PVD层。
而且，金属层142可以是难熔金属化合物，包括但不限于钛(Ti)、钨(W)、钽(Ta)、锆(Zr)、铪(Hf)、钼(Mo)、铌(Nb)、钒(V)和铬(Cr)等。通常，难熔金属与反应组分结合，例如氯(Cl)或氟(F)，并与另一种气体一起提供以形成难熔金属化合物。例如，四氯化钛(TiCl4)、六氟化钨(WF6)、五氯化钽(TaCl5)、四氯化锆(ZrCl4)、四氯化铪(HfCl4)、五氯化钼(MoCl5)、五氯化铌(NbCl5)、五氯化钒(VCl5)或四氯化铬(CrCl4)可作为含难熔金属的化合物气体。
优选地，金属层142是铜，在电镀单元内形成，例如可从加利福尼亚的圣克拉拉的应用材料公司获得的ElectraTM Cu ECP装置。ElectraTM CuECP装置也可集成进也可从应用材料公司获得的EnduraTM平台。
在题为“Electro-deposition Chemistry”的共同受让的美国专利No.6,113,771中描述了铜电解质溶液和铜电镀技术，作为参考文献这里引用了其内容。一般地，电镀浴的铜浓度大于约0.7M，硫酸铜浓度约为0.85，pH值约为1.75。电镀浴也可包含各种本领域公知的添加剂。浴温在约15℃-25℃之间。偏压在约-15伏到15伏之间。一方面，正偏压在约0.1伏到10伏之间，而负偏压在约-0.1到-10伏之间。
可选地，金属层142沉积之后，可进行热退火工艺过程，使晶片处于约100℃-400℃温度下约10分钟到1小时，优选约30分钟。以约100sccm-10000sccm的速率引入例如氦气、氢气、氮气或其混合物的载气/清洗气。室压维持在约2Torr-10Torr之间。射频功率在约13.56MHz的频率下约为200W-1000W，且衬底间距优选在约300密尔-800密尔之间。
沉积之后，可对所得结构的顶部进行平坦化。可用化学机械抛光(CMP)装置，例如可从加利福尼亚的圣克拉拉的应用材料公司获得的MirraTM装置。可选地，在上述后续层的沉积之间可对结构的中间表面进行平坦化。
图4是示例性多室处理装置600的示意性俯视图，其适于用来进行以上公开的沉积序列。这种处理装置600可以是加利福尼亚的圣克拉拉的应用材料公司市售的EnduraTM装置。在1993年2月16日授权的题为“StageVacuum Wafer Processing System and Method”的美国专利No.5,186,718中公开了类似的多室处理装置，作为参考文献这里引用了其内容。
装置600一般包括用来将衬底送入装置600和从装置600中取出衬底的负荷固定室602、604。通常，由于装置600处于真空条件下，所以负荷固定室602、604可将引入装置600内的衬底“吸出”(pump down)。第一机械手610可在负荷固定室602、604与第一套一个或多个衬底处理室612、614、616、618(所图示的有四个)之间传送衬底。每个处理室612、614、616、618可配备成能进行许多衬底处理操作，例如循环层沉积、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洗、脱气、定位和其他衬底工艺过程。第一机械手610还能将衬底传递到一个或多个传送室622、624，并从传送室中取出衬底。
传送室622、624在允许将衬底在装置600内传递的同时，并被用来维持超高真空状态。第二机械手630可在传送室622、624与第二套一个或多个衬底处理室632、634、636、638之间传送衬底。类似于处理室612、614、616、618，处理室632、634、636、638可配备成能进行多种不同衬底处理操作，例如循环层沉积、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洗、脱气、定位。衬底处理室612、614、616、618、632、634、636、638中的任一个如果对于装置600进行的具体工艺过程是不需要的，都可从装置600中除去。
在一种结构方案中，每个处理室632和638可以是适于沉积晶种层的物理气相沉积室、化学气相沉积室或循环沉积室；每个处理室634和636可以是适于沉积阻挡层的循环沉积室、化学气相沉积室或物理气相沉积室；每个处理室612和614可以是适于沉积介电层的物理气相沉积室、化学气相沉积室或循环沉积室；并且每个处理室616和618可以是配备成能够为互连构造蚀刻孔或开口的蚀刻室。装置600的这种具体结构方案是用来说明本发明，并非用来限制本发明的范围。
我们相信厚度大于约20埃的难熔金属氮化物层将终止下层金属互连的生长模式。厚度大于或等于约20埃的难熔金属氮化物层将建立其自身独特的生长模式，这种模式将被更高层的互连首先采用，直至更高层的互连达到特定厚度并建立其自身的模式，从而形成不同的晶体结构。这种现象发生是因为：在初始沉积阶段，后续沉积的层的生长模式通常类似于其底层的生长模式，但是一旦后续层达到特定厚度，则所述后续层将呈现其自身的内在模式。
例如氮化钽自然趋向于形成厚度不小于20埃的无定形结构。在厚度小于约20埃时，TaN类似其底层的生长模式。因此，后续铜互连层令人惊讶地穿过阻挡层而生长，所述阻挡层是根据本发明的方法沉积的，呈现类似于底层铜互连的生长模式。换句话说，厚度小于或等于约20埃的TaN阻挡层使得铜粒能够较好地生长，使得铜粒能够穿过TaN阻挡层延伸生长，或简单地说，就是铜在氮化钽阻挡层上呈现出外延生长。
图5是构造300的透射电子显微镜(TEM)图像，构造300具有根据上述沉积技术而在其内沉积的氮化钽阻挡层310。构造300的高宽比为5：1，并在200mm的晶片上形成。阻挡层310由氮化钽组成，并是在250℃、2Torr下沉积出的。每个循环周期持续约2秒，并进行了30个循环周期。氮化钽阻挡层310的厚度约为15埃。如所示的，阻挡层310是保形的(conformal)，表明在整个构造300中阶梯覆盖较好。
图6是表示多层互连结构400的部分横截面的TEM图像。多层互连结构400包括下层铜互连405、氮化钽阻挡层410和上层铜互连420。下层铜互连405的铜粒生长穿过阻挡层410，延伸进上层铜互连420内，从而表明氮化钽阻挡层410的外延生长。阻挡层410由氮化钽组成，并是在250℃、2Torr下沉积出的。每个循环周期持续约2秒，并进行了30个循环周期。阻挡层410的厚度约为10埃，这个厚度足以抑制铜迁移进介电层内。
利用TEM仪器测量参照图3和4所示和描述的阻挡层310和410。应该理解，这种测量技术及任意其他用来测量沉积层厚度的技术都存在边缘误差。因此，这里所提供的厚度是近似的，且是根据目前已知的最好技术来量化的，但并非意在限制本发明的范围。
下面的实例意在提供本发明的一个实施例的非限制性说明。
实例：
利用循环沉积在下层铜层上沉积出厚约为的TaN层。通过物理气相沉积在TaN层上沉积出厚约为
Figure C200710101714D00222
的铜合金晶种层。铜合金晶种层含有浓度约为2.0个原子百分比的铝，并且是通过PVD，利用由浓度约为2.0个原子百分比的铝组成的铜-铝目标材料而沉积出的。然后利用ECP沉积本体铜层来填满构造。接着在氮气(N2)和氢气(H2)的环境中，约380℃的温度下将衬底热退火约15分钟。
构造总电阻显著降低，上层铜层令人惊讶地呈现出类似于下层铜层的晶粒生长。与
Figure C200710101714D00223
的PVD Ta相比较，TaN层的阻挡性能呈现出更长的无故障工作时间(TTF)。另外，TaN层表现出更低的接触电阻和紧密的扩散分布。TaN层还呈现出优异的形态学特性，包括光滑的表面形态和针孔自由表面。
此外，根据这里所描述的PDMAT和氨工艺过程沉积的TaN膜表现出不同寻常的膜均匀性。膜厚度与沉积循环次数成线性比例，从而保证了精确的厚度控制。并发现在200mm的衬底上，对于10埃，厚度均匀性是1.8％；对于100埃，厚度均匀性是2.1％。沉积膜呈现出非同寻常的保形覆盖，至少在某些结果中接近100％。
最后，铜合金晶种层表现出对TaN层优异的粘合/润湿性能。(PVD)铜晶种层在沉积的阻挡层上呈现出优选的{111}取向。{111}晶体取向是优选的，这是因为这种取向提供了较大的晶粒尺寸，并由于更大的晶粒尺寸从而呈现出较好的电迁移电阻。
虽然前述部分涉及本发明的实施例，但在不偏离本发明的基本范围以及由所附的权利要求所确定的范围的情况下，可设计本发明的其他进一步实施例。

Claims (17)

1.一种在衬底上形成金属互连的方法，包括：
在衬底表面上沉积第一金属层；
通过交替地引入一次或多次含金属化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分第一金属层上沉积含难熔金属的阻挡层，直至所述含难熔金属的阻挡层的厚度小于20埃，该阻挡层的厚度使得所述阻挡层呈现类晶体结构，并足以抑制原子迁移；
在至少一部分所述阻挡层上沉积铜合金晶种层；以及
在至少一部分所述铜合金晶种层上沉积第二金属层，其中所述第一金属层的晶粒生长延伸穿过所述阻挡层进入所述第二金属层内。
2.如权利要求1所述的方法，其中所述含难熔金属的阻挡层包括氮化钽。
3.如权利要求1所述的方法，其中重复每次脉冲输入，直至所述含难熔金属的阻挡层的厚度小于10埃。
4.如权利要求1所述的方法，其中所述交替的脉冲输入被重复10-70次来形成所述含难熔金属的阻挡层。
5.如权利要求1所述的方法，还包括在每次含金属化合物的脉冲和每次含氮化合物的脉冲过程中连续地流入清洗气。
6.如权利要求5所述的方法，其中所述清洗气包括氩气、氮气、氦气或其组合。
7.如权利要求1所述的方法，其中通过一时间延迟把每次含金属化合物的脉冲输入和含氮化合物的脉冲输入分开。
8.如权利要求7所述的方法，其中每次时间延迟对于一定量的含金属化合物或一定量的含氮化合物吸附在所述衬底表面上是足够长的。
9.如权利要求8所述的方法，其中所述时间延迟足够长以去除所述衬底表面上的未吸附的分子。
10.如权利要求1所述的方法，其中所述含氮化合物选自氨；肼；甲基肼；二甲基肼；t-丁基肼；苯肼；偶氮基异丁烷；叠氮基乙烷；其衍生物；及其组合。
11.如权利要求1所述的方法，其中所述含金属化合物选自四(二甲基氨基)钛；四(乙基甲基氨基)钛；四(二乙基氨基)钛；四氯化钛)；四碘化钛；四溴化钛；t-丁基亚氨基-三(二乙基氨基)钽；五(乙基甲基氨基)钽；五(二甲基氨基)钽；五(二乙基氨基)钽；t-丁基亚氨基-三(二乙基甲基氨基)钽；t-丁基亚氨基-三(二甲基氨基)钽；二(环戊二烯基)钽化三氢；二(甲基环戊二烯基)钽化三氢；其衍生物；及其组合。
12.如权利要求1所述的方法，其中所述第一金属层和第二金属层各个都包括钨或铜。
13.如权利要求1所述的方法，其中所述铜合金晶种层包括沉积在所述阻挡层上的第一晶种层和沉积在所述第一晶种层上的第二晶种层。
14.如权利要求13所述的方法，其中所述第一晶种层包括铜和选自铝、镁、钛、锆、锡及其组合的金属，且所述第二晶种层包括铜。
15.一种在衬底上形成金属互连的方法，包括：
在衬底表面上沉积第一金属层；
通过交替地引入一次或多次含钛化合物的脉冲、一次或多次含硅化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分所述第一金属层上沉积厚度小于20埃的钛硅氮化物层；
沉积铜合金晶种层；以及
在至少一部分所述铜合金晶种层上沉积第二金属层，其中所述第一金属层的晶粒生长延伸穿过所述钛硅氮化物层进入所述第二金属层内。
16.一种在衬底上形成金属互连的方法，包括：
在至少一部分金属层上沉积厚度小于20埃的双层阻挡层，所述双层阻挡层包括：
通过交替地引入一次或多次含钽化合物的脉冲和一次或多次含氮
化合物的脉冲而沉积的第一氮化钽层；和
第二α相钽层；
沉积铜合金晶种层；以及
在至少一部分所述铜合金晶种层上沉积第二金属层，其中所述金属层的晶粒生长延伸穿过所述双层阻挡层进入所述第二金属层内。
17.一种在衬底上形成金属互连的方法，包括：
在衬底表面上沉积第一金属层；
通过交替地引入一次或多次含钽化合物的脉冲和一次或多次含氮化合物的脉冲，在至少一部分所述第一金属层上沉积厚度小于20埃的氮化钽阻挡层；
沉积铜合金晶种层；以及
在至少一部分所述铜合金晶种层上沉积第二金属层，其中所述第一金属层的晶粒生长延伸穿过所述氮化钽阻挡层进入所述第二金属层内。
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Families Citing this family (807)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6974766B1 (en) 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6620723B1 (en) * 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6936538B2 (en) 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6451692B1 (en) * 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US20020036780A1 (en) * 2000-09-27 2002-03-28 Hiroaki Nakamura Image processing apparatus
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6596643B2 (en) * 2001-05-07 2003-07-22 Applied Materials, Inc. CVD TiSiN barrier for copper integration
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
TW581822B (en) * 2001-07-16 2004-04-01 Applied Materials Inc Formation of composite tungsten films
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
WO2003030224A2 (en) * 2001-07-25 2003-04-10 Applied Materials, Inc. Barrier formation using novel sputter-deposition method
US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
TW589684B (en) * 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
US7780789B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US20080102203A1 (en) * 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6939801B2 (en) * 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
AU2003238853A1 (en) * 2002-01-25 2003-09-02 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6866746B2 (en) * 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US20030235961A1 (en) * 2002-04-17 2003-12-25 Applied Materials, Inc. Cyclical sequential deposition of multicomponent films
US6861094B2 (en) * 2002-04-25 2005-03-01 Micron Technology, Inc. Methods for forming thin layers of materials on micro-device workpieces
US6838114B2 (en) * 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US7041335B2 (en) * 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US6858547B2 (en) * 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US20030232501A1 (en) * 2002-06-14 2003-12-18 Kher Shreyas S. Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US7118783B2 (en) * 2002-06-26 2006-10-10 Micron Technology, Inc. Methods and apparatus for vapor processing of micro-device workpieces
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US7524374B2 (en) 2002-07-17 2009-04-28 Applied Materials, Inc. Method and apparatus for generating a precursor for a semiconductor processing system
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
KR100476370B1 (ko) * 2002-07-19 2005-03-16 주식회사 하이닉스반도체 배치형 원자층증착장치 및 그의 인시튜 세정 방법
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6753271B2 (en) * 2002-08-15 2004-06-22 Micron Technology, Inc. Atomic layer deposition methods
US20050181212A1 (en) * 2004-02-17 2005-08-18 General Electric Company Composite articles having diffusion barriers and devices incorporating the same
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7540920B2 (en) * 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
EP1420080A3 (en) * 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
JP3866655B2 (ja) * 2002-12-26 2007-01-10 励起 渡辺 処理装置及び処理方法
US7262133B2 (en) * 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7244683B2 (en) * 2003-01-07 2007-07-17 Applied Materials, Inc. Integration of ALD/CVD barriers with porous low k materials
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
US20040177813A1 (en) 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US20040180551A1 (en) * 2003-03-13 2004-09-16 Biles Peter John Carbon hard mask for aluminum interconnect fabrication
US7342984B1 (en) 2003-04-03 2008-03-11 Zilog, Inc. Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character
US20040198069A1 (en) * 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
JP5342110B2 (ja) * 2003-05-27 2013-11-13 アプライド マテリアルズ インコーポレイテッド 前駆物質を含むソースキャニスタ及びこれを用いて特徴部を充填する方法
JP2007502551A (ja) * 2003-06-13 2007-02-08 アプライド　マテリアルズ　インコーポレイテッド 銅メタライゼーションのためのａｌｄ窒化タンタルの集積
KR100724181B1 (ko) * 2003-06-16 2007-05-31 동경 엘렉트론 주식회사 성막 방법, 반도체 장치의 제조 방법, 반도체 장치 및 성막장치
JP2007523994A (ja) * 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド バリヤ物質の原子層堆積
US6880592B2 (en) * 2003-06-26 2005-04-19 Advanced Technology Materials, Inc. Canister guard
US20050037613A1 (en) * 2003-08-14 2005-02-17 Stephan Grunow Diffusion barrier for copper lines in integrated circuits
US8152922B2 (en) * 2003-08-29 2012-04-10 Asm America, Inc. Gas mixer and manifold assembly for ALD reactor
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7169713B2 (en) * 2003-09-26 2007-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition (ALD) method with enhanced deposition rate
US8501594B2 (en) * 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
TW200524018A (en) * 2003-11-20 2005-07-16 Ulvac Inc Method of cleaning surface of semiconductor substrate, method of manufacturing film, method of manufacturing semiconductor device and semiconductor device
US20050109276A1 (en) * 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US20060051966A1 (en) * 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US7780793B2 (en) * 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7445810B2 (en) * 2004-04-15 2008-11-04 Hewlett-Packard Development Company, L.P. Method of making a tantalum layer and apparatus using a tantalum layer
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US8202575B2 (en) * 2004-06-28 2012-06-19 Cambridge Nanotech, Inc. Vapor deposition systems and methods
US7605469B2 (en) * 2004-06-30 2009-10-20 Intel Corporation Atomic layer deposited tantalum containing adhesion layer
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US20060019032A1 (en) * 2004-07-23 2006-01-26 Yaxin Wang Low thermal budget silicon nitride formation for advance transistor fabrication
KR100552820B1 (ko) * 2004-09-17 2006-02-21 동부아남반도체 주식회사 반도체 소자의 제조 방법
JP4783561B2 (ja) * 2004-09-27 2011-09-28 株式会社アルバック 銅配線の形成方法
KR100909195B1 (ko) * 2004-09-27 2009-07-23 가부시키가이샤 알박 구리 함유막 형성 방법
US20060084283A1 (en) * 2004-10-20 2006-04-20 Paranjpe Ajit P Low temperature sin deposition methods
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7078810B2 (en) * 2004-12-01 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and fabrication method thereof
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7429402B2 (en) * 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US20060199386A1 (en) * 2004-12-27 2006-09-07 Jim-Jey Huang Semiconductor device with low-resistance inlaid copper/barrier interconnects and method for manufacturing the same
JP4934595B2 (ja) 2005-01-18 2012-05-16 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
US7235492B2 (en) * 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US20080070017A1 (en) * 2005-02-10 2008-03-20 Naoki Yoshii Layered Thin Film Structure, Layered Thin Film Forming Method, Film Forming System and Storage Medium
US7265048B2 (en) 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
JP4931173B2 (ja) * 2005-03-03 2012-05-16 株式会社アルバック タンタル窒化物膜の形成方法
JP4931174B2 (ja) * 2005-03-03 2012-05-16 株式会社アルバック タンタル窒化物膜の形成方法
US20060246699A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Process for electroless copper deposition on a ruthenium seed
US7651934B2 (en) 2005-03-18 2010-01-26 Applied Materials, Inc. Process for electroless copper deposition
US8486845B2 (en) * 2005-03-21 2013-07-16 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7351285B2 (en) * 2005-03-29 2008-04-01 Tokyo Electron Limited Method and system for forming a variable thickness seed layer
CN100595974C (zh) * 2005-03-30 2010-03-24 松下电器产业株式会社 传输线
US8298336B2 (en) * 2005-04-01 2012-10-30 Lam Research Corporation High strip rate downstream chamber
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US20060286774A1 (en) * 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7651955B2 (en) * 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7550381B2 (en) * 2005-07-18 2009-06-23 Applied Materials, Inc. Contact clean by remote plasma and repair of silicide surface
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US20070049043A1 (en) * 2005-08-23 2007-03-01 Applied Materials, Inc. Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US20070054046A1 (en) * 2005-09-06 2007-03-08 Tokyo Electron Limited Method of forming a tantalum-containing layer from a metalorganic precursor
US20070054047A1 (en) * 2005-09-06 2007-03-08 Tokyo Electron Limited Method of forming a tantalum-containing layer from a metalorganic precursor
US20070065576A1 (en) * 2005-09-09 2007-03-22 Vikram Singh Technique for atomic layer deposition
US20070082507A1 (en) * 2005-10-06 2007-04-12 Applied Materials, Inc. Method and apparatus for the low temperature deposition of doped silicon nitride films
US7464917B2 (en) * 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US8460519B2 (en) * 2005-10-28 2013-06-11 Applied Materials Inc. Protective offset sputtering
US8454804B2 (en) * 2005-10-28 2013-06-04 Applied Materials Inc. Protective offset sputtering
US7884032B2 (en) * 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US20070119371A1 (en) 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US7942970B2 (en) * 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US8216374B2 (en) * 2005-12-22 2012-07-10 Applied Materials, Inc. Gas coupler for substrate processing chamber
KR100717501B1 (ko) * 2005-12-29 2007-05-14 동부일렉트로닉스 주식회사 반도체 소자의 금속 배선 형성 방법
WO2007084493A2 (en) * 2006-01-19 2007-07-26 Asm America, Inc. High temperature ald inlet manifold
US20070169687A1 (en) * 2006-01-26 2007-07-26 Caracal, Inc. Silicon carbide formation by alternating pulses
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US20070193637A1 (en) * 2006-02-23 2007-08-23 Micron Technology, Inc. Systems and methods for controlling fluid flow
US7645484B2 (en) * 2006-03-31 2010-01-12 Tokyo Electron Limited Method of forming a metal carbide or metal carbonitride film having improved adhesion
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US20070252299A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Synchronization of precursor pulsing and wafer rotation
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
US20080026149A1 (en) * 2006-05-31 2008-01-31 Asm America, Inc. Methods and systems for selectively depositing si-containing films using chloropolysilanes
US7501355B2 (en) * 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition
WO2008005892A2 (en) * 2006-06-30 2008-01-10 Applied Materials, Inc. Nanocrystal formation
JP2008034648A (ja) * 2006-07-28 2008-02-14 Dainippon Screen Mfg Co Ltd 基板処理装置
CN103981568A (zh) 2006-07-31 2014-08-13 应用材料公司 形成含碳外延硅层的方法
CN101496150B (zh) * 2006-07-31 2012-07-18 应用材料公司 控制外延层形成期间形态的方法
US7727908B2 (en) 2006-08-03 2010-06-01 Micron Technology, Inc. Deposition of ZrA1ON films
JP5125031B2 (ja) * 2006-08-29 2013-01-23 東京エレクトロン株式会社 真空処理装置及び真空処理方法
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US7432548B2 (en) 2006-08-31 2008-10-07 Micron Technology, Inc. Silicon lanthanide oxynitride films
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US7776765B2 (en) 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US7544604B2 (en) * 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US7521379B2 (en) * 2006-10-09 2009-04-21 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
CN101528973B (zh) * 2006-10-24 2012-04-25 应用材料公司 用于原子层沉积的涡流室盖
US7775508B2 (en) * 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US7692222B2 (en) * 2006-11-07 2010-04-06 Raytheon Company Atomic layer deposition in the formation of gate structures for III-V semiconductor
US7741200B2 (en) * 2006-12-01 2010-06-22 Applied Materials, Inc. Formation and treatment of epitaxial layer containing silicon and carbon
US7837790B2 (en) * 2006-12-01 2010-11-23 Applied Materials, Inc. Formation and treatment of epitaxial layer containing silicon and carbon
US20080132039A1 (en) * 2006-12-01 2008-06-05 Yonah Cho Formation and treatment of epitaxial layer containing silicon and carbon
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
US8394196B2 (en) * 2006-12-12 2013-03-12 Applied Materials, Inc. Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
US7897495B2 (en) * 2006-12-12 2011-03-01 Applied Materials, Inc. Formation of epitaxial layer containing silicon and carbon
US7960236B2 (en) * 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US20080145536A1 (en) * 2006-12-13 2008-06-19 Applied Materials, Inc. METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SiBN DEPOSITION
US8026605B2 (en) * 2006-12-14 2011-09-27 Lam Research Corporation Interconnect structure and method of manufacturing a damascene structure
US8821637B2 (en) 2007-01-29 2014-09-02 Applied Materials, Inc. Temperature controlled lid assembly for tungsten nitride deposition
US9064960B2 (en) * 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US7776733B2 (en) * 2007-05-02 2010-08-17 Tokyo Electron Limited Method for depositing titanium nitride films for semiconductor manufacturing
US7589020B2 (en) * 2007-05-02 2009-09-15 Tokyo Electron Limited Method for depositing titanium nitride films for semiconductor manufacturing
KR20090018290A (ko) * 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
KR101046520B1 (ko) * 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어
US7678298B2 (en) 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7585762B2 (en) 2007-09-25 2009-09-08 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US8182608B2 (en) * 2007-09-26 2012-05-22 Eastman Kodak Company Deposition system for thin film formation
US20090087550A1 (en) * 2007-09-27 2009-04-02 Tokyo Electron Limited Sequential flow deposition of a tungsten silicide gate electrode film
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
JP2011500961A (ja) * 2007-10-11 2011-01-06 バレンス プロセス イクウィップメント，インコーポレイテッド 化学気相成長反応器
CN101939812B (zh) * 2007-10-19 2013-05-01 Mks仪器股份有限公司 用于高气体流速处理的环形等离子体室
US20090107955A1 (en) * 2007-10-26 2009-04-30 Tiner Robin L Offset liner for chamber evacuation
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US8291857B2 (en) * 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8187381B2 (en) * 2008-08-22 2012-05-29 Applied Materials, Inc. Process gas delivery for semiconductor process chamber
US20100062149A1 (en) * 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8491967B2 (en) 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US8425977B2 (en) * 2008-09-29 2013-04-23 Applied Materials, Inc. Substrate processing chamber with off-center gas delivery funnel
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
US9175388B2 (en) * 2008-11-01 2015-11-03 Ultratech, Inc. Reaction chamber with removable liner
US20100120245A1 (en) * 2008-11-07 2010-05-13 Agus Sofian Tjandra Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US20100183825A1 (en) * 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
US8557702B2 (en) * 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
FI123539B (fi) * 2009-02-09 2013-06-28 Beneq Oy ALD-reaktori, menetelmä ALD-reaktorin lataamiseksi ja tuotantolinja
US20110045182A1 (en) * 2009-03-13 2011-02-24 Tokyo Electron Limited Substrate processing apparatus, trap device, control method for substrate processing apparatus, and control method for trap device
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8307854B1 (en) 2009-05-14 2012-11-13 Vistadeltek, Inc. Fluid delivery substrates for building removable standard fluid delivery sticks
TWI534922B (zh) 2009-06-10 2016-05-21 威士塔戴爾泰克有限責任公司 極端流量和／或高溫流體輸送基板
US8107274B2 (en) * 2009-07-30 2012-01-31 Chrong-Jung Lin Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US20110097487A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including bonded plates
FI20096380A0 (fi) * 2009-12-22 2009-12-22 Beneq Oy Ohutkalvoaurinkokenno, valmistusmenetelmä ja käyttö
JP5601974B2 (ja) * 2010-01-19 2014-10-08 パナソニック株式会社 半導体装置及びその製造方法
JP5445252B2 (ja) * 2010-03-16 2014-03-19 東京エレクトロン株式会社 成膜装置
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
WO2012039833A2 (en) 2010-09-24 2012-03-29 Applied Materials, Inc. Low temperature silicon carbide deposition process
CN102002666B (zh) * 2010-10-22 2012-06-27 哈尔滨工业大学 一种铜互联用氮化钽扩散阻挡层的制备方法
US8835308B2 (en) * 2010-12-21 2014-09-16 Applied Materials, Inc. Methods for depositing materials in high aspect ratio features
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
JP5661523B2 (ja) * 2011-03-18 2015-01-28 東京エレクトロン株式会社 成膜方法及び成膜装置
US8524600B2 (en) 2011-03-31 2013-09-03 Applied Materials, Inc. Post deposition treatments for CVD cobalt films
US9695510B2 (en) * 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9941100B2 (en) 2011-12-16 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
US8815344B2 (en) * 2012-03-14 2014-08-26 Applied Materials, Inc. Selective atomic layer depositions
US9076661B2 (en) 2012-04-13 2015-07-07 Applied Materials, Inc. Methods for manganese nitride integration
US9048294B2 (en) 2012-04-13 2015-06-02 Applied Materials, Inc. Methods for depositing manganese and manganese nitrides
TWI554636B (zh) 2012-04-25 2016-10-21 應用材料股份有限公司 由金屬脒鹽前驅物製造介電膜的方法
US9598766B2 (en) 2012-05-27 2017-03-21 Air Products And Chemicals, Inc. Vessel with filter
US10233541B2 (en) 2012-06-29 2019-03-19 Applied Materials, Inc. Deposition of films containing alkaline earth metals
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US8736056B2 (en) * 2012-07-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Device for reducing contact resistance of a metal
US8911826B2 (en) * 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
TWI480417B (zh) 2012-11-02 2015-04-11 Ind Tech Res Inst 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
JP6117588B2 (ja) * 2012-12-12 2017-04-19 東京エレクトロン株式会社 Ｃｕ配線の形成方法
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
JP6017396B2 (ja) * 2012-12-18 2016-11-02 東京エレクトロン株式会社 薄膜形成方法および薄膜形成装置
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US8735280B1 (en) 2012-12-21 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor integrated circuit fabrication
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP6046752B2 (ja) * 2013-01-30 2016-12-21 京セラ株式会社 ガスノズルおよびこれを用いたプラズマ装置
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9659814B2 (en) 2013-02-01 2017-05-23 Applied Materials, Inc. Doping control of metal nitride films
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US9005704B2 (en) 2013-03-06 2015-04-14 Applied Materials, Inc. Methods for depositing films comprising cobalt and cobalt nitrides
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US20150001720A1 (en) * 2013-06-27 2015-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect Structure and Method for Forming Interconnect Structure
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
KR20150050638A (ko) * 2013-10-29 2015-05-11 에이에스엠 아이피 홀딩 비.브이. 증착 장치
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US20150125628A1 (en) * 2013-11-06 2015-05-07 Asm Ip Holding B.V. Method of depositing thin film
US9460932B2 (en) 2013-11-11 2016-10-04 Applied Materials, Inc. Surface poisoning using ALD for high selectivity deposition of high aspect ratio features
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
CN104805418B (zh) * 2014-01-23 2018-05-08 北京北方华创微电子装备有限公司 常压化学气相淀积中的工艺流程控制方法及系统
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US10683571B2 (en) * 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9425078B2 (en) * 2014-02-26 2016-08-23 Lam Research Corporation Inhibitor plasma mediated atomic layer deposition for seamless feature fill
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
CN104979276B (zh) * 2014-04-09 2018-05-08 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US9177858B1 (en) 2014-05-08 2015-11-03 GlobalFoundries, Inc. Methods for fabricating integrated circuits including barrier layers for interconnect structures
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
JP5837962B1 (ja) * 2014-07-08 2015-12-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびガス整流部
KR102247560B1 (ko) 2014-07-14 2021-05-03 삼성전자 주식회사 Rps에서의 플라즈마 생성방법, 및 그 플라즈마 생성방법을 포함한 반도체 소자 제조방법
EP3169432B1 (en) 2014-07-17 2020-05-27 Reliance Industries Limited Process for modifying a heterogeneous catalyst with an organometallic compound, heterogeneous catalyst and use of the catalyst for preventing coke formation
JP6446881B2 (ja) * 2014-07-17 2019-01-09 東京エレクトロン株式会社 ガス供給装置及びバルブ装置
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
JP5792364B1 (ja) * 2014-07-31 2015-10-07 株式会社日立国際電気 基板処理装置、チャンバリッドアセンブリ、半導体装置の製造方法、プログラム及び記録媒体
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
TW201634738A (zh) * 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
TWI723024B (zh) 2015-06-26 2021-04-01 美商應用材料股份有限公司 用於改良的氣體分配的遞迴注入設備
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
WO2017052905A1 (en) * 2015-09-22 2017-03-30 Applied Materials, Inc. Apparatus and method for selective deposition
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10176999B2 (en) 2015-12-31 2019-01-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device having a multi-layer, metal-containing film
FR3046878B1 (fr) * 2016-01-19 2018-05-18 Kobus Sas Procede de fabrication d'une interconnexion comprenant un via s'etendant au travers d'un substrat
CN107026113B (zh) * 2016-02-02 2020-03-31 中芯国际集成电路制造(上海)有限公司 半导体装置的制造方法和系统
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US20180076065A1 (en) * 2016-09-15 2018-03-15 Applied Materials, Inc. Integrated system for semiconductor process
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
CN108063117B (zh) * 2016-11-09 2020-12-01 中芯国际集成电路制造(上海)有限公司 互连结构及其形成方法
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
TW201823501A (zh) 2016-11-16 2018-07-01 美商陶氏全球科技有限責任公司 用於製造膜上之薄塗層之方法
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
RU2673515C2 (ru) * 2017-02-02 2018-11-27 Общество С Ограниченной Ответственностью "Монолюм" Способ подачи газов в реактор для выращивания эпитаксиальных структур на основе нитридов металлов iii группы и устройство для его осуществления
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US9972501B1 (en) 2017-03-14 2018-05-15 Nano-Master, Inc. Techniques and systems for continuous-flow plasma enhanced atomic layer deposition (PEALD)
DE102017106410A1 (de) * 2017-03-24 2018-09-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10157785B2 (en) 2017-05-01 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
DE17908402T1 (de) * 2017-05-02 2020-06-25 Picosun Oy Ald-vorrichtung, verfahren und ventil
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11004722B2 (en) 2017-07-20 2021-05-11 Applied Materials, Inc. Lift pin assembly
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
JP6964473B2 (ja) * 2017-09-14 2021-11-10 東京エレクトロン株式会社 ガス供給装置及び成膜装置
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872804B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
CN108060410B (zh) * 2017-12-15 2023-08-18 浙江晶盛机电股份有限公司 用于平板式pecvd的进气管道保护结构
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
CN108415354A (zh) * 2018-01-31 2018-08-17 深圳市方瑞科技有限公司 一种宽幅等离子处理机及其控制方法
CN108415353A (zh) * 2018-01-31 2018-08-17 深圳市方瑞科技有限公司 一种线型等离子机及其控制方法
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
SG11202008268RA (en) 2018-03-19 2020-10-29 Applied Materials Inc Methods for depositing coatings on aerospace components
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
WO2019209401A1 (en) 2018-04-27 2019-10-31 Applied Materials, Inc. Protection of components from corrosion
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
EP3785494A4 (en) 2018-06-14 2022-01-26 MKS Instruments, Inc. REMOTE PLASMA SOURCE RADICAL OUTPUT MONITOR AND METHOD OF USE
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11124874B2 (en) 2018-10-25 2021-09-21 Applied Materials, Inc. Methods for depositing metallic iridium and iridium silicide
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
KR102601581B1 (ko) * 2018-10-31 2023-11-14 삼성전자주식회사 플라즈마 챔버의 가스 공급 장치 및 이를 적용한 플라즈마 처리 장치
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US20220013332A1 (en) * 2018-11-02 2022-01-13 Nihon University Magnetized plasmoid injection device
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US10636705B1 (en) 2018-11-29 2020-04-28 Applied Materials, Inc. High pressure annealing of metal gate structures
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
CN113196444B (zh) * 2018-12-20 2024-07-02 应用材料公司 用于供应改良的气流至处理腔室的处理空间的方法和设备
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
JP2020126881A (ja) * 2019-02-01 2020-08-20 東京エレクトロン株式会社 基板処理装置およびクリーニング方法
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
EP3959356A4 (en) 2019-04-26 2023-01-18 Applied Materials, Inc. METHODS FOR PROTECTING AEROSPACE ELEMENTS AGAINST CORROSION AND OXIDATION
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
CN111948907B (zh) * 2019-05-16 2022-01-28 上海微电子装备（集团）股份有限公司 掩模板温度控制装置和掩模曝光装置
CN110112096A (zh) * 2019-05-17 2019-08-09 长江存储科技有限责任公司 金属互连结构及其形成方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
TW202117068A (zh) * 2019-09-19 2021-05-01 美商應用材料股份有限公司 用於在ald程序中控制脈衝形狀的方法
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
US11205589B2 (en) * 2019-10-06 2021-12-21 Applied Materials, Inc. Methods and apparatuses for forming interconnection structures
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210048408A (ko) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. 반도체 증착 반응기 매니폴드
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
CN111029299A (zh) * 2019-12-18 2020-04-17 华虹半导体(无锡)有限公司 金属互连结构的形成方法
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US11087959B2 (en) 2020-01-09 2021-08-10 Nano-Master, Inc. Techniques for a hybrid design for efficient and economical plasma enhanced atomic layer deposition (PEALD) and plasma enhanced chemical vapor deposition (PECVD)
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11640900B2 (en) 2020-02-12 2023-05-02 Nano-Master, Inc. Electron cyclotron rotation (ECR)-enhanced hollow cathode plasma source (HCPS)
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
WO2022005696A1 (en) 2020-07-03 2022-01-06 Applied Materials, Inc. Methods for refurbishing aerospace components
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US12054823B2 (en) * 2020-09-17 2024-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for manufacturing metal gate structures
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
CN112378603B (zh) * 2020-11-18 2023-01-10 北京自动化控制设备研究所 原子气室的漏率检测方法及系统
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
US11976002B2 (en) 2021-01-05 2024-05-07 Applied Materials, Inc. Methods for encapsulating silver mirrors on optical structures
CN112956012B (zh) * 2021-01-27 2024-02-23 长江存储科技有限责任公司 用于在半导体结构中形成阻挡层的方法
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
TWI806532B (zh) * 2022-03-31 2023-06-21 景碩科技股份有限公司 電路板結構

Family Cites Families (583)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US187256A (en) * 1877-02-13 Improvement in windmills
US76837A (en) * 1868-04-14 John somerville and egbert elsdon
US54769A (en) * 1866-05-15 Iiviproveivient in churn-dashers
US124262A (en) * 1872-03-05 Improvement in oscillating-swings
US31807A (en) * 1861-03-26 Improved culinary boiler
US86507A (en) * 1869-02-02 Improvement in whip-sockets
US224578A (en) * 1880-02-17 Fence-post driver
US224600A (en) * 1880-02-17 Steam-trap
US622893A (en) * 1899-04-11 Electric igniter for gas-engines
US76507A (en) * 1868-04-07 Egbert o br
US28924A (en) * 1860-06-26 Vapor-lamp
US14320A (en) * 1856-02-26 Process of painting or varnishing woven wire
US213987A (en) * 1879-04-08 Improvement in bevels
US172872A (en) * 1876-02-01 Improvement in colters
US41250A (en) * 1864-01-12 Improvement in burning, roasting,, and smelting ores
US31618A (en) * 1861-03-05 Water-elevator
FI117944B (fi) 1999-10-15 2007-04-30 Asm Int Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
FI118158B (sv) 1999-10-15 2007-07-31 Asm Int Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
US3291456A (en) 1964-07-01 1966-12-13 Combustion Eng Self-agitating, stabilized flow mixing vessel
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
FI57975C (fi) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4415275A (en) 1981-12-21 1983-11-15 Dietrich David E Swirl mixing device
FI64878C (fi) 1982-05-10 1984-01-10 Lohja Ab Oy Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer
US4732110A (en) 1983-04-29 1988-03-22 Hughes Aircraft Company Inverted positive vertical flow chemical vapor deposition reactor chamber
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
US5693139A (en) 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US5294286A (en) 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
GB2162207B (en) 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPH0766910B2 (ja) 1984-07-26 1995-07-19 新技術事業団 半導体単結晶成長装置
US4614639A (en) * 1985-04-26 1986-09-30 Tegal Corporation Compound flow plasma reactor
US5250148A (en) 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
US4829022A (en) 1985-12-09 1989-05-09 Nippon Telegraph And Telephone Corporation Method for forming thin films of compound semiconductors by flow rate modulation epitaxy
US4917556A (en) 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
US4761269A (en) 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4838983A (en) 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4767494A (en) 1986-07-04 1988-08-30 Nippon Telegraph & Telephone Corporation Preparation process of compound semiconductor
JPH0834180B2 (ja) 1986-08-26 1996-03-29 セイコー電子工業株式会社 化合物半導体薄膜の成長方法
JPH0639357B2 (ja) 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
US5246536A (en) 1986-09-08 1993-09-21 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
JP2587623B2 (ja) 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
JP2929291B2 (ja) 1986-12-04 1999-08-03 セイコーインスツルメンツ株式会社 絶縁ゲート電界効果トランジスタの製造方法
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5923985A (en) 1987-01-05 1999-07-13 Seiko Instruments Inc. MOS field effect transistor and its manufacturing method
DE3704505A1 (de) 1987-02-13 1988-08-25 Leybold Ag Einlegegeraet fuer vakuumanlagen
JPS63227011A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 化学気相成長装置
JPH0727861B2 (ja) 1987-03-27 1995-03-29 富士通株式会社 ▲ｉｉｉ▼−▲ｖ▼族化合物半導体結晶の成長方法
JPH0812844B2 (ja) 1987-03-27 1996-02-07 日本電気株式会社 ▲ｉｉｉ▼−ｖ族化合物半導体およびその形成方法
DE3721637A1 (de) 1987-06-30 1989-01-12 Aixtron Gmbh Gaseinlass fuer eine mehrzahl verschiedener reaktionsgase in reaktionsgefaesse
US5348911A (en) 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
EP0297867B1 (en) 1987-07-01 1993-10-06 Nec Corporation A process for the growth of iii-v group compound semiconductor crystal on a si substrate
JPH0666274B2 (ja) 1987-07-01 1994-08-24 日本電気株式会社 ▲ｉｉｉ▼−ｖ族化合物半導体の形成方法
FI81926C (fi) 1987-09-29 1990-12-10 Nokia Oy Ab Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater.
WO1989003587A1 (en) 1987-10-14 1989-04-20 The Furukawa Electric Co., Ltd. Method and apparatus for thin film formation by plasma cvd
DE3743938C2 (de) 1987-12-23 1995-08-31 Cs Halbleiter Solartech Verfahren zum Atomschicht-Epitaxie-Aufwachsen einer III/V-Verbindungshalbleiter-Dünnschicht
FR2626110A1 (fr) 1988-01-19 1989-07-21 Thomson Csf Procede de realisation par epitaxie d'une couche d'un materiau supraconducteur
US5166092A (en) 1988-01-28 1992-11-24 Fujitsu Limited Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
US5229081A (en) * 1988-02-12 1993-07-20 Regal Joint Co., Ltd. Apparatus for semiconductor process including photo-excitation process
FR2628985B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
US5130269A (en) 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
US5261959A (en) 1988-05-26 1993-11-16 General Electric Company Diamond crystal growth apparatus
DE3851701T2 (de) 1988-06-03 1995-03-30 Ibm Verfahren zur Herstellung künstlicher Hochtemperatur-Supraleiter mit mehrschichtiger Struktur.
US4927670A (en) 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US5234561A (en) 1988-08-25 1993-08-10 Hauzer Industries Bv Physical vapor deposition dual coating process
US4931132A (en) 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
US4917566A (en) * 1988-11-17 1990-04-17 Contractors Crane Service, Inc. Crane attachment for backhoe
US4907534A (en) * 1988-12-09 1990-03-13 Siemens Aktiengesellschaft Gas distributor for OMVPE Growth
US5013683A (en) 1989-01-23 1991-05-07 The Regents Of The University Of California Method for growing tilted superlattices
JPH0824191B2 (ja) 1989-03-17 1996-03-06 富士通株式会社 薄膜トランジスタ
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
EP0413982B1 (en) 1989-07-27 1997-05-14 Junichi Nishizawa Impurity doping method with adsorbed diffusion source
JP2506451B2 (ja) 1989-08-18 1996-06-12 富士通株式会社 化学気相成長装置及び化学気相成長法
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
JP2926798B2 (ja) 1989-11-20 1999-07-28 国際電気株式会社 連続処理エッチング方法及びその装置
CA2031253A1 (en) 1989-12-01 1991-06-02 Kenji Aoki Method of producing bipolar transistor
FI84562C (fi) 1990-01-16 1991-12-27 Neste Oy Foerfarande och anordning foer framstaellning av heterogena katalysatorer.
US5290748A (en) 1990-01-16 1994-03-01 Neste Oy Polymerization catalyst for olefines
FI87892C (fi) 1991-07-16 1993-03-10 Neste Oy Foerfarande foer framstaellning av heterogena katalysatorer med oenskad metallhalt
US5338389A (en) 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
JPH07105497B2 (ja) 1990-01-31 1995-11-13 新技術事業団 半導体デバイス及びその製造方法
JP2822536B2 (ja) 1990-02-14 1998-11-11 住友電気工業株式会社 立方晶窒化ホウ素薄膜の形成方法
US5316615A (en) 1990-03-23 1994-05-31 International Business Machines Corporation Surfactant-enhanced epitaxy
JPH042699A (ja) 1990-04-18 1992-01-07 Mitsubishi Electric Corp 結晶成長方法
US5173474A (en) 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
US5091320A (en) 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5483919A (en) 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
DE4027628A1 (de) 1990-08-31 1992-03-05 Wolters Peter Fa Vorrichtung zur steuerung oder regelung von laepp-, hon- oder poliermaschinen
US5085887A (en) * 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
US5085885A (en) 1990-09-10 1992-02-04 University Of Delaware Plasma-induced, in-situ generation, transport and use or collection of reactive precursors
JPH0819516B2 (ja) 1990-10-26 1996-02-28 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 薄膜状のアルファＴａを形成するための方法および構造
US5221449A (en) 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
EP0491521B1 (en) * 1990-12-15 1997-03-12 Fujitsu Limited Process for producing diamond film
US5286296A (en) 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
US5178681A (en) 1991-01-29 1993-01-12 Applied Materials, Inc. Suspension system for semiconductor reactors
US5204145A (en) * 1991-03-04 1993-04-20 General Electric Company Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom
US5705224A (en) 1991-03-20 1998-01-06 Kokusai Electric Co., Ltd. Vapor depositing method
US5316793A (en) 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
US5224513A (en) * 1991-06-04 1993-07-06 Cselt - Centro Studi E Laboratori Telecomunicazioni S.P.A. Device for introducing reagents into an organometallic vapor phase deposition apparatus
US5173327A (en) 1991-06-18 1992-12-22 Micron Technology, Inc. LPCVD process for depositing titanium films for semiconductor devices
US5270247A (en) 1991-07-12 1993-12-14 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
US6001669A (en) 1991-09-09 1999-12-14 Philips Electronics North America Corporation Method for producing II-VI compound semiconductor epitaxial layers having low defects
US5311055A (en) 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
JP2987379B2 (ja) 1991-11-30 1999-12-06 科学技術振興事業団 半導体結晶のエピタキシャル成長方法
US5336324A (en) 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
JP2763222B2 (ja) * 1991-12-13 1998-06-11 三菱電機株式会社 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置
US5397428A (en) 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US5256244A (en) 1992-02-10 1993-10-26 General Electric Company Production of diffuse reflective coatings by atomic layer epitaxy
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
JP2987663B2 (ja) * 1992-03-10 1999-12-06 株式会社日立製作所 基板処理装置
US5458084A (en) 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
AU4378893A (en) 1992-05-22 1993-12-30 Minnesota Mining And Manufacturing Company Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy
US5285885A (en) * 1992-05-29 1994-02-15 Fishburne International, Inc. Tobacco container sorting conveyor
US5278435A (en) 1992-06-08 1994-01-11 Apa Optics, Inc. High responsivity ultraviolet gallium nitride detector
FI91422C (fi) 1992-06-18 1994-06-27 Mikrokemia Oy Menetelmä ja laitteisto nestemäisten reagenssien syöttämiseksi kemialliseen reaktoriin
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
JPH0750690B2 (ja) 1992-08-21 1995-05-31 日本電気株式会社 ハロゲン化物を用いる半導体結晶のエピタキシャル成長方法とその装置
US5381485A (en) * 1992-08-29 1995-01-10 Adaptive Control Limited Active sound control systems and sound reproduction systems
US5338362A (en) 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
JP3405466B2 (ja) 1992-09-17 2003-05-12 富士通株式会社 流体切替弁および半導体装置の製造装置
US5532511A (en) 1992-10-23 1996-07-02 Research Development Corp. Of Japan Semiconductor device comprising a highspeed static induction transistor
US5455072A (en) 1992-11-18 1995-10-03 Bension; Rouvain M. Initiation and bonding of diamond and other thin films
JPH06177349A (ja) * 1992-12-02 1994-06-24 Matsushita Electric Ind Co Ltd 高密度ｄｒａｍの製造方法および高密度ｄｒａｍ
US5607009A (en) 1993-01-28 1997-03-04 Applied Materials, Inc. Method of heating and cooling large area substrates and apparatus therefor
JP3265042B2 (ja) 1993-03-18 2002-03-11 東京エレクトロン株式会社 成膜方法
JP3124861B2 (ja) 1993-03-24 2001-01-15 富士通株式会社 薄膜成長方法および半導体装置の製造方法
US5443647A (en) 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
US5526244A (en) * 1993-05-24 1996-06-11 Bishop; Vernon R. Overhead luminaire
US5330610A (en) 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback
JPH0729897A (ja) 1993-06-25 1995-01-31 Nec Corp 半導体装置の製造方法
US5643366A (en) 1994-01-31 1997-07-01 Applied Materials, Inc. Wafer handling within a vacuum chamber using vacuum
US6130147A (en) 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
JP3181171B2 (ja) * 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5916395A (en) * 1994-07-05 1999-06-29 Murata Manufacturing Co., Ltd. Method for fabricating ceramic electronic parts
JP3008782B2 (ja) 1994-07-15 2000-02-14 信越半導体株式会社 気相成長方法およびその装置
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
US5641984A (en) * 1994-08-19 1997-06-24 General Electric Company Hermetically sealed radiation imager
TW295677B (zh) 1994-08-19 1997-01-11 Tokyo Electron Co Ltd
US5730801A (en) * 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5644128A (en) 1994-08-25 1997-07-01 Ionwerks Fast timing position sensitive detector
US6158446A (en) 1994-11-14 2000-12-12 Fsi International Ultra-low particle semiconductor cleaner
JPH08148431A (ja) 1994-11-24 1996-06-07 Mitsubishi Electric Corp Ｍｂｅ装置、及びガス分岐配管装置
FI97730C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
WO1996018756A1 (en) 1994-12-16 1996-06-20 Nkt Research Center A/S A PA-CVD PROCESS FOR DEPOSITION OF A SOLID METAL-CONTAINING FILM ONTO A SUBSTRATE CONTAINING AT LEAST 50 % of Fe or WC
US5542452A (en) * 1995-02-07 1996-08-06 Cdc Technologies, Inc. Valve assembly
DE69625265T2 (de) * 1995-03-28 2003-09-04 Texas Instruments Inc., Dallas Halbleiterstrukturen
JPH08288965A (ja) 1995-04-18 1996-11-01 Hitachi Ltd スイッチングシステム
US5573566A (en) * 1995-05-26 1996-11-12 Advanced Semiconductor Materials America, Inc. Method of making a quartz dome reactor chamber
TW434745B (en) * 1995-06-07 2001-05-16 Tokyo Electron Ltd Plasma processing apparatus
JP3288200B2 (ja) 1995-06-09 2002-06-04 東京エレクトロン株式会社 真空処理装置
JPH0922896A (ja) 1995-07-07 1997-01-21 Toshiba Corp 金属膜の選択的形成方法
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
TW294820B (en) * 1995-07-10 1997-01-01 Watkins Johnson Co Gas distribution apparatus
KR0167248B1 (ko) 1995-07-24 1999-02-01 문정환 반도체 기판의 전처리방법
KR100310249B1 (ko) 1995-08-05 2001-12-17 엔도 마코토 기판처리장치
US5804488A (en) 1995-08-24 1998-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a tungsten silicide capacitor having a high breakdown voltage
US6066358A (en) * 1995-11-21 2000-05-23 Applied Materials, Inc. Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer
US5672054A (en) 1995-12-07 1997-09-30 Carrier Corporation Rotary compressor with reduced lubrication sensitivity
US6084302A (en) * 1995-12-26 2000-07-04 Micron Technologies, Inc. Barrier layer cladding around copper interconnect lines
FI107533B (fi) 1996-04-03 2001-08-31 Fortum Oil & Gas Oy Kemiallisten reaktioiden suorittamiseen tarkoitetut funktionaaliset pinnat ja menetelmä niiden valmistamiseksi
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
US5906683A (en) 1996-04-16 1999-05-25 Applied Materials, Inc. Lid assembly for semiconductor processing chamber
US6313035B1 (en) * 1996-05-31 2001-11-06 Micron Technology, Inc. Chemical vapor deposition using organometallic precursors
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6062798A (en) 1996-06-13 2000-05-16 Brooks Automation, Inc. Multi-level substrate processing apparatus
US6534133B1 (en) * 1996-06-14 2003-03-18 Research Foundation Of State University Of New York Methodology for in-situ doping of aluminum coatings
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5996528A (en) * 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
AUPO129096A0 (en) 1996-07-26 1996-08-22 Boc Gases Australia Limited Oxygen dissolver for pipelines or pipe outlets
US5747113A (en) 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5830270A (en) 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
JP3901252B2 (ja) * 1996-08-13 2007-04-04 キヤノンアネルバ株式会社 化学蒸着装置
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
JP2923753B2 (ja) * 1996-08-21 1999-07-26 工業技術院長 Ｉｉｉ族原子層の形成方法
KR100216542B1 (ko) 1996-08-27 1999-08-16 정선종 펄스 레이저 증착장치용 멀티 타겟 구동장치
FI100758B (fi) 1996-09-11 1998-02-13 Planar Internat Oy Ltd Menetelmä ZnS:Mn-loisteainekerroksen kasvattamiseksi ohutkalvoelektrol uminenssikomponentteja varten
US5951771A (en) 1996-09-30 1999-09-14 Celestech, Inc. Plasma jet system
US5835677A (en) 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US5923056A (en) * 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US6071572A (en) 1996-10-15 2000-06-06 Applied Materials, Inc. Forming tin thin films using remote activated specie generation
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5882411A (en) 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
US5807792A (en) 1996-12-18 1998-09-15 Siemens Aktiengesellschaft Uniform distribution of reactants in a device layer
US6335280B1 (en) * 1997-01-13 2002-01-01 Asm America, Inc. Tungsten silicide deposition process
US6043177A (en) * 1997-01-21 2000-03-28 University Technology Corporation Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition
US5913147A (en) * 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US6051286A (en) 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US6174509B1 (en) * 1997-02-11 2001-01-16 Corning Incorporated Pure fused silica, furnace and method
DE19706789C2 (de) * 1997-02-20 1999-10-21 Siemens Ag CMOS-Schaltung mit teilweise dielektrisch isolierten Source-Drain-Bereichen und Verfahren zu ihrer Herstellung
DE19707929C1 (de) * 1997-02-27 1998-09-03 Schroff Gmbh Schrank zur Aufnahme von elektrischen und elektronischen Komponenten
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5855675A (en) * 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
JPH10308283A (ja) * 1997-03-04 1998-11-17 Denso Corp Ｅｌ素子およびその製造方法
US5866795A (en) * 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US6153519A (en) 1997-03-31 2000-11-28 Motorola, Inc. Method of forming a barrier layer
US5888303A (en) * 1997-04-07 1999-03-30 R.E. Dixon Inc. Gas inlet apparatus and method for chemical vapor deposition reactors
USRE39969E1 (en) * 1997-04-11 2008-01-01 Tokyo Electron Limited Processing system
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
TW417249B (en) * 1997-05-14 2001-01-01 Applied Materials Inc Reliability barrier integration for cu application
US6156382A (en) 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
US6140237A (en) 1997-06-16 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer
US5846330A (en) * 1997-06-26 1998-12-08 Celestech, Inc. Gas injection disc assembly for CVD applications
US6162715A (en) 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US6309713B1 (en) 1997-06-30 2001-10-30 Applied Materials, Inc. Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
FI972874A0 (fi) 1997-07-04 1997-07-04 Mikrokemia Oy Foerfarande och anordning foer framstaellning av tunnfilmer
US6073366A (en) 1997-07-11 2000-06-13 Asm America, Inc. Substrate cooling system and method
US5882413A (en) * 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
US5904565A (en) 1997-07-17 1999-05-18 Sharp Microelectronics Technology, Inc. Low resistance contact between integrated circuit metal levels and method for same
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (ko) * 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
KR100269306B1 (ko) 1997-07-31 2000-10-16 윤종용 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
KR100261017B1 (ko) 1997-08-19 2000-08-01 윤종용 반도체 장치의 금속 배선층을 형성하는 방법
US5904569A (en) 1997-09-03 1999-05-18 National Semiconductor Corporation Method for forming self-aligned vias in multi-metal integrated circuits
US5801634A (en) 1997-09-08 1998-09-01 Sony Corporation Signal tower controller
US6197683B1 (en) * 1997-09-29 2001-03-06 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
US6348376B2 (en) * 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
KR100274603B1 (ko) 1997-10-01 2001-01-15 윤종용 반도체장치의제조방법및그의제조장치
JPH11117071A (ja) * 1997-10-09 1999-04-27 Anelva Corp Ｃｖｄ装置
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
KR100252049B1 (ko) 1997-11-18 2000-04-15 윤종용 원자층 증착법에 의한 알루미늄층의 제조방법
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
JP3550985B2 (ja) * 1997-12-02 2004-08-04 株式会社デンソー 神経回路網の検証方法，検証装置及び記録媒体
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6099904A (en) * 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
FI104383B (fi) 1997-12-09 2000-01-14 Fortum Oil & Gas Oy Menetelmä laitteistojen sisäpintojen päällystämiseksi
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
TW439151B (en) 1997-12-31 2001-06-07 Samsung Electronics Co Ltd Method for forming conductive layer using atomic layer deposition process
KR100269328B1 (ko) * 1997-12-31 2000-10-16 윤종용 원자층 증착 공정을 이용하는 도전층 형성방법
KR100275727B1 (ko) * 1998-01-06 2001-01-15 윤종용 반도체 장치의 커패시터 형성방법
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6117244A (en) 1998-03-24 2000-09-12 Applied Materials, Inc. Deposition resistant lining for CVD chamber
US6316098B1 (en) 1998-03-27 2001-11-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
KR20010042296A (ko) 1998-03-31 2001-05-25 로즈 암스트롱, 크리스틴 에이. 트러트웨인 세린 프로테아제 억제제로서의 벤즈옥사지논/벤조티아지논
JPH11297681A (ja) * 1998-04-07 1999-10-29 Mitsubishi Electric Corp 高誘電率薄膜形成用ｃｖｄ装置および高誘電率薄膜の形成方法
US6433314B1 (en) 1998-04-08 2002-08-13 Applied Materials, Inc. Direct temperature control for a component of a substrate processing chamber
JP3955386B2 (ja) * 1998-04-09 2007-08-08 富士通株式会社 半導体装置及びその製造方法
US6181012B1 (en) * 1998-04-27 2001-01-30 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
KR100267885B1 (ko) * 1998-05-18 2000-11-01 서성기 반도체 박막증착장치
KR100282853B1 (ko) 1998-05-18 2001-04-02 서성기 연속기체분사에의한반도체박막증착장치
US6025627A (en) * 1998-05-29 2000-02-15 Micron Technology, Inc. Alternate method and structure for improved floating gate tunneling devices
FI105313B (fi) 1998-06-03 2000-07-14 Planar Systems Oy Menetelmä ohutkalvo-elektroluminesenssirakenteiden kasvattamiseksi
NL1009327C2 (nl) 1998-06-05 1999-12-10 Asm Int Werkwijze en inrichting voor het overbrengen van wafers.
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
KR100319888B1 (ko) * 1998-06-16 2002-01-10 윤종용 선택적 금속층 형성방법, 이를 이용한 커패시터 형성 및 콘택홀 매립방법
KR100278657B1 (ko) 1998-06-24 2001-02-01 윤종용 반도체장치의금속배선구조및그제조방법
JP2000031387A (ja) 1998-07-14 2000-01-28 Fuji Electric Co Ltd 誘電体薄膜コンデンサの製造方法
US6358323B1 (en) * 1998-07-21 2002-03-19 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in a substrate processing system
US6218302B1 (en) 1998-07-21 2001-04-17 Motorola Inc. Method for forming a semiconductor device
KR100275738B1 (ko) 1998-08-07 2000-12-15 윤종용 원자층 증착법을 이용한 박막 제조방법
KR20000013654A (ko) 1998-08-12 2000-03-06 윤종용 원자층 증착 방법으로 형성한 알루미나/알루미늄나이트라이드복합 유전체막을 갖는 캐패시터와 그제조 방법
KR100327105B1 (ko) 1998-08-14 2002-03-09 오길록 고휘도 형광체 및 그 제조방법
US6291876B1 (en) 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
FI105643B (fi) 1998-08-21 2000-09-15 Planar Systems Oy Ohutkalvo-elektroluminesenssilaite ja menetelmä sen valmistamiseksi
US6520218B1 (en) * 1998-09-03 2003-02-18 Advanced Technology Materials, Inc. Container chemical guard
KR20000022003A (ko) 1998-09-10 2000-04-25 이경수 금속과규소를포함한3성분질화물막의형성방법
FI108375B (fi) 1998-09-11 2002-01-15 Asm Microchemistry Oy Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi
KR100273474B1 (ko) 1998-09-14 2000-12-15 이경수 화학기상 증착장치의 가스 공급장치와 그 제어방법
KR100287180B1 (ko) * 1998-09-17 2001-04-16 윤종용 계면 조절층을 이용하여 금속 배선층을 형성하는 반도체 소자의 제조 방법
US6251759B1 (en) * 1998-10-03 2001-06-26 Applied Materials, Inc. Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6445701B1 (en) * 1998-10-09 2002-09-03 Microsoft Corporation Channel access scheme for use in network communications
KR100327328B1 (ko) * 1998-10-13 2002-05-09 윤종용 부분적으로다른두께를갖는커패시터의유전막형성방버뵤
KR100297719B1 (ko) * 1998-10-16 2001-08-07 윤종용 박막제조방법
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6409904B1 (en) * 1998-12-01 2002-06-25 Nutool, Inc. Method and apparatus for depositing and controlling the texture of a thin film
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
JP2995300B1 (ja) 1999-02-03 1999-12-27 工業技術院長 機械要素部品の表面改善方法
US6087726A (en) * 1999-03-01 2000-07-11 Lsi Logic Corporation Metal interconnect stack for integrated circuit structure
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6540838B2 (en) 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US20020000665A1 (en) * 1999-04-05 2002-01-03 Alexander L. Barr Semiconductor device conductive bump and interconnect barrier
KR100273473B1 (ko) 1999-04-06 2000-11-15 이경수 박막 형성 방법
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
JP2000319773A (ja) 1999-04-30 2000-11-21 Shindengen Electric Mfg Co Ltd Ｘ線検出器におけるセレン層の製造方法
KR100347379B1 (ko) * 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
FI118342B (fi) 1999-05-10 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
TW512448B (en) * 1999-05-11 2002-12-01 Applied Materials Inc Sequential sputter and reactive precleans of vias and contacts
US6218298B1 (en) 1999-05-19 2001-04-17 Infineon Technologies North America Corp. Tungsten-filled deep trenches
JP2000340883A (ja) 1999-05-27 2000-12-08 Fujitsu Ltd 多波長発振光半導体装置
US6254602B1 (en) 1999-05-28 2001-07-03 Sdgi Holdings, Inc. Advanced coupling device using shape-memory technology
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
JP2000353666A (ja) 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd 半導体薄膜およびその製造方法
DE60035948T2 (de) 1999-06-19 2008-05-15 Asm Genitech Korea Ltd. Chemischer abscheidungsreaktor und dessen verwendung für die abscheidung eines dünnen films
US6071808A (en) 1999-06-23 2000-06-06 Lucent Technologies Inc. Method of passivating copper interconnects in a semiconductor
WO2000079019A1 (en) 1999-06-24 2000-12-28 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
US6524952B1 (en) * 1999-06-25 2003-02-25 Applied Materials, Inc. Method of forming a titanium silicide layer on a substrate
US6309964B1 (en) * 1999-07-08 2001-10-30 Taiwan Semiconductor Manufacturing Company Method for forming a copper damascene structure over tungsten plugs with improved adhesion, oxidation resistance, and diffusion barrier properties using nitridation of the tungsten plug
KR100319494B1 (ko) 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
FI110311B (fi) 1999-07-20 2002-12-31 Asm Microchemistry Oy Menetelmä ja laitteisto aineiden poistamiseksi kaasuista
KR20010017820A (ko) 1999-08-14 2001-03-05 윤종용 반도체 소자 및 그 제조방법
US6328871B1 (en) 1999-08-16 2001-12-11 Applied Materials, Inc. Barrier layer for electroplating processes
KR200167993Y1 (ko) 1999-08-17 2000-02-15 박함규 자수기의 윗실 공급장치
US6984415B2 (en) * 1999-08-20 2006-01-10 International Business Machines Corporation Delivery systems for gases for gases via the sublimation of solid precursors
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
EP1081751A3 (en) * 1999-09-02 2003-03-19 Applied Materials, Inc. Methods of pre-cleaning dielectric layers of substrates
EP1207967B1 (de) 1999-09-03 2003-08-27 ABB Fläkt Aktiebolag Verfahren zum ein- und ausbringen von werkstücken in bzw. aus einem oberflächenbehandlungsbereich, oberflächenbehandlungsvorrichtung und anlage zur oberflächenbehandlung
US6184138B1 (en) * 1999-09-07 2001-02-06 Chartered Semiconductor Manufacturing Ltd. Method to create a controllable and reproducible dual copper damascene structure
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6383330B1 (en) * 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6610151B1 (en) 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
DE10049257B4 (de) 1999-10-06 2015-05-13 Samsung Electronics Co., Ltd. Verfahren zur Dünnfilmerzeugung mittels atomarer Schichtdeposition
FI117942B (fi) 1999-10-14 2007-04-30 Asm Int Menetelmä oksidiohutkalvojen kasvattamiseksi
US6902763B1 (en) 1999-10-15 2005-06-07 Asm International N.V. Method for depositing nanolaminate thin films on sensitive surfaces
US6475276B1 (en) * 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
KR100737901B1 (ko) 1999-10-15 2007-07-10 에이에스엠 인터내셔널 엔.브이. 민감한 표면에 나노적층박막을 증착하는 방법
ATE247632T1 (de) 1999-10-15 2003-09-15 Lonza Ag Verfahren zur herstellung von cyanessigsäureestern
DE60028394T2 (de) 1999-10-15 2007-03-29 Asm International N.V. Konforme auskleidungsschichten für damaszenmetallisierungen
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
KR100304714B1 (ko) 1999-10-20 2001-11-02 윤종용 금속 할로겐 가스를 사용한 반도체 소자의 금속 박막 형성방법
TW468212B (en) 1999-10-25 2001-12-11 Motorola Inc Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6548112B1 (en) 1999-11-18 2003-04-15 Tokyo Electron Limited Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber
KR20010047128A (ko) 1999-11-18 2001-06-15 이경수 액체원료 기화방법 및 그에 사용되는 장치
US6558509B2 (en) * 1999-11-30 2003-05-06 Applied Materials, Inc. Dual wafer load lock
FI118804B (fi) 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
US6780704B1 (en) 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
KR100364257B1 (ko) * 1999-12-06 2002-12-11 삼성전자 주식회사 텅스텐 화학 기상 퇴적방법 및 텅스텐 플러그 형성방법
KR100330749B1 (ko) 1999-12-17 2002-04-03 서성기 반도체 박막증착장치
KR100624903B1 (ko) 1999-12-22 2006-09-19 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100705926B1 (ko) * 1999-12-22 2007-04-11 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
FI118474B (fi) 1999-12-28 2007-11-30 Asm Int Laite ohutkalvojen valmistamiseksi
FI118343B (fi) 1999-12-28 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
KR100390951B1 (ko) 1999-12-29 2003-07-10 주식회사 하이닉스반도체 반도체 소자의 구리 배선 형성 방법
JP4817210B2 (ja) 2000-01-06 2011-11-16 東京エレクトロン株式会社 成膜装置および成膜方法
FI20000099A0 (fi) 2000-01-18 2000-01-18 Asm Microchemistry Ltd Menetelmä metalliohutkalvojen kasvattamiseksi
US6277249B1 (en) 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions
JP4362919B2 (ja) 2000-02-04 2009-11-11 株式会社デンソー 原子層エピタキシャル成長法による成膜方法
JP4776054B2 (ja) 2000-02-04 2011-09-21 株式会社デンソー 原子層成長による薄膜形成方法
KR100378871B1 (ko) 2000-02-16 2003-04-07 주식회사 아펙스 라디칼 증착을 위한 샤워헤드장치
US6492283B2 (en) 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
JP4211185B2 (ja) 2000-02-29 2009-01-21 株式会社デンソー Ｃｖｄ，ａｌｅ装置用ガラス基板収納治具
AU2001245388A1 (en) * 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
JP3423665B2 (ja) * 2000-03-31 2003-07-07 理想科学工業株式会社 領域判別方法および装置
JP4556282B2 (ja) 2000-03-31 2010-10-06 株式会社デンソー 有機ｅｌ素子およびその製造方法
US7060132B2 (en) 2000-04-14 2006-06-13 Asm International N.V. Method and apparatus of growing a thin film
TW576873B (en) 2000-04-14 2004-02-21 Asm Int Method of growing a thin film onto a substrate
TW496907B (en) 2000-04-14 2002-08-01 Asm Microchemistry Oy Method and apparatus of growing a thin film onto a substrate
FI117979B (fi) * 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
KR100363088B1 (ko) * 2000-04-20 2002-12-02 삼성전자 주식회사 원자층 증착방법을 이용한 장벽 금속막의 제조방법
TW508658B (en) * 2000-05-15 2002-11-01 Asm Microchemistry Oy Process for producing integrated circuits
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
JP2001328900A (ja) 2000-05-15 2001-11-27 Denso Corp 薄膜の形成方法
FI118805B (fi) 2000-05-15 2008-03-31 Asm Int Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon
KR100427423B1 (ko) * 2000-05-25 2004-04-13 가부시키가이샤 고베 세이코쇼 Ｃｖｄ용 인너튜브
KR100647442B1 (ko) 2000-06-07 2006-11-17 주성엔지니어링(주) 원자층 증착법을 이용한 박막 형성방법
KR100403611B1 (ko) * 2000-06-07 2003-11-01 삼성전자주식회사 금속-절연체-금속 구조의 커패시터 및 그 제조방법
US7253076B1 (en) * 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
EP2293322A1 (en) * 2000-06-08 2011-03-09 Genitech, Inc. Method for forming a metal nitride layer
KR100387255B1 (ko) * 2000-06-20 2003-06-11 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
KR100332314B1 (ko) * 2000-06-24 2002-04-12 서성기 박막증착용 반응용기
KR100332313B1 (ko) 2000-06-24 2002-04-12 서성기 Ａｌｄ 박막증착장치 및 증착방법
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6551929B1 (en) * 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6936538B2 (en) * 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US6818250B2 (en) * 2000-06-29 2004-11-16 The Regents Of The University Of Colorado Method for forming SIO2 by chemical vapor deposition at room temperature
US6585823B1 (en) 2000-07-07 2003-07-01 Asm International, N.V. Atomic layer deposition
US6592942B1 (en) 2000-07-07 2003-07-15 Asm International N.V. Method for vapour deposition of a film onto a substrate
FI20001694A0 (fi) 2000-07-20 2000-07-20 Asm Microchemistry Oy Menetelmä ohutkalvon kasvattamiseksi substraatille
KR100444149B1 (ko) * 2000-07-22 2004-08-09 주식회사 아이피에스 Ald 박막증착설비용 클리닝방법
US6368954B1 (en) * 2000-07-28 2002-04-09 Advanced Micro Devices, Inc. Method of copper interconnect formation using atomic layer copper deposition
KR100630666B1 (ko) 2000-08-09 2006-10-02 삼성전자주식회사 금속 콘택 및 커패시터를 포함하는 반도체 소자 제조방법
KR100396879B1 (ko) * 2000-08-11 2003-09-02 삼성전자주식회사 동일 물질로 이루어진 이중막을 포함하는 다중막으로캡슐화된 캐패시터를 구비한 반도체 메모리 소자 및 그의제조 방법
US6302965B1 (en) 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
JP4013022B2 (ja) 2000-09-13 2007-11-28 日産自動車株式会社 ジェットポンプ
JP4304854B2 (ja) * 2000-09-21 2009-07-29 宇部興産株式会社 多層ポリイミドフィルムおよび積層体
DE10064944A1 (de) * 2000-09-22 2002-04-11 Aixtron Ag Verfahren zum Abscheiden von insbesondere kristallinen Schichten, Gaseinlassorgan sowie Vorrichtung zur Durchführung des Verfahrens
US6685823B2 (en) * 2000-10-16 2004-02-03 Uniroyal Chemical Company, Inc. C-nitrosoaniline compounds and their blends as polymerization inhibitors
US6428847B1 (en) * 2000-10-16 2002-08-06 Primaxx, Inc. Vortex based CVD reactor
US6498091B1 (en) 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
KR100436941B1 (ko) 2000-11-07 2004-06-23 주성엔지니어링(주) 박막 증착 장치 및 그 방법
US6355561B1 (en) 2000-11-21 2002-03-12 Micron Technology, Inc. ALD method to improve surface coverage
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
WO2002045167A2 (en) 2000-11-30 2002-06-06 Asm International N.V. Thin films for magnetic devices
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US6949450B2 (en) * 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US6416822B1 (en) 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6878402B2 (en) 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
WO2002045871A1 (en) 2000-12-06 2002-06-13 Angstron Systems, Inc. System and method for modulated ion-induced atomic layer deposition (mii-ald)
KR100386034B1 (ko) 2000-12-06 2003-06-02 에이에스엠 마이크로케미스트리 리미티드 확산 방지막의 결정립계를 금속산화물로 충진한 구리 배선구조의 반도체 소자 제조 방법
US20020104481A1 (en) 2000-12-06 2002-08-08 Chiang Tony P. System and method for modulated ion-induced atomic layer deposition (MII-ALD)
US20020197402A1 (en) 2000-12-06 2002-12-26 Chiang Tony P. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6428859B1 (en) 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6368950B1 (en) * 2000-12-12 2002-04-09 Advanced Micro Devices, Inc. Silicide gate transistors
US20020076481A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Chamber pressure state-based control for a reactor
US6630201B2 (en) 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US20020073924A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Gas introduction system for a reactor
US20020076507A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US6800173B2 (en) 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
TW554191B (en) * 2000-12-16 2003-09-21 Au Optronics Corp Laminating structure and its forming method
KR20020049875A (ko) * 2000-12-20 2002-06-26 윤종용 반도체 메모리 소자의 강유전체 커패시터 및 그 제조방법
JP3963078B2 (ja) 2000-12-25 2007-08-22 株式会社高純度化学研究所 ターシャリーアミルイミドトリス（ジメチルアミド）タンタルとその製造方法及びそれを用いたｍｏｃｖｄ用原料溶液並びにそれを用いた窒化タンタル膜の形成方法
KR20020056260A (ko) * 2000-12-29 2002-07-10 박종섭 반도체 소자의 금속 게이트 형성방법
US20020086111A1 (en) * 2001-01-03 2002-07-04 Byun Jeong Soo Method of forming refractory metal nitride layers using chemisorption techniques
US20020127336A1 (en) 2001-01-16 2002-09-12 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
KR100434487B1 (ko) 2001-01-17 2004-06-05 삼성전자주식회사 샤워 헤드 및 이를 포함하는 박막 형성 장비
KR100400031B1 (ko) 2001-01-17 2003-09-29 삼성전자주식회사 반도체 소자의 콘택 플러그 및 그 형성 방법
JP2002222934A (ja) 2001-01-29 2002-08-09 Nec Corp 半導体装置およびその製造方法
US6844604B2 (en) 2001-02-02 2005-01-18 Samsung Electronics Co., Ltd. Dielectric layer for semiconductor device and method of manufacturing the same
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
KR100400033B1 (ko) 2001-02-08 2003-09-29 삼성전자주식회사 다층 배선 구조를 갖는 반도체 소자 및 그의 제조방법
KR100395766B1 (ko) 2001-02-12 2003-08-25 삼성전자주식회사 강유전체 기억 소자 및 그 형성 방법
EP1421607A2 (en) * 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US20020117399A1 (en) 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via
US20020121241A1 (en) 2001-03-02 2002-09-05 Nguyen Anh N. Processing chamber and method of distributing process fluids therein to facilitate sequential deposition of films
US6878206B2 (en) * 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
FI109770B (fi) * 2001-03-16 2002-10-15 Asm Microchemistry Oy Menetelmä metallinitridiohutkalvojen valmistamiseksi
US7348042B2 (en) 2001-03-19 2008-03-25 Novellus Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6369430B1 (en) 2001-04-02 2002-04-09 Motorola, Inc. Method of preventing two neighboring contacts from a short-circuit caused by a void between them and device having the same
WO2002082554A1 (fr) 2001-04-02 2002-10-17 Matsushita Electric Industrial Co., Ltd. Dispositif a semi-conducteur et son procede de fabrication
US20020144657A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. ALD reactor employing electrostatic chuck
US20020144655A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. Gas valve system for a reactor
US6561498B2 (en) 2001-04-09 2003-05-13 Lorex Industries, Inc. Bubbler for use in vapor generation systems
US6420189B1 (en) 2001-04-27 2002-07-16 Advanced Micro Devices, Inc. Superconducting damascene interconnected for integrated circuit
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6447933B1 (en) 2001-04-30 2002-09-10 Advanced Micro Devices, Inc. Formation of alloy material using alternating depositions of alloy doping element and bulk material
KR100363332B1 (en) 2001-05-23 2002-12-05 Samsung Electronics Co Ltd Method for forming semiconductor device having gate all-around type transistor
TW530739U (en) * 2001-05-26 2003-05-01 Salida Industry Co Ltd Improved structure for carpentry corner chiseling machine
US6828218B2 (en) * 2001-05-31 2004-12-07 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
US6528884B1 (en) * 2001-06-01 2003-03-04 Advanced Micro Devices, Inc. Conformal atomic liner layer in an integrated circuit interconnect
DE10128573A1 (de) 2001-06-13 2003-01-02 Infineon Technologies Ag Verhindern der unerwünschten externen Erfassung von Operationen in integrierten Digitalschaltungen
US6686278B2 (en) * 2001-06-19 2004-02-03 United Microelectronics Corp. Method for forming a plug metal layer
US6849545B2 (en) 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
US6861334B2 (en) * 2001-06-21 2005-03-01 Asm International, N.V. Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition
JP4680429B2 (ja) * 2001-06-26 2011-05-11 Ｏｋｉセミコンダクタ株式会社 テキスト音声変換装置における高速読上げ制御方法
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
US20030198754A1 (en) 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
US7098131B2 (en) 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US20030017697A1 (en) 2001-07-19 2003-01-23 Kyung-In Choi Methods of forming metal layers using metallic precursors
US7105444B2 (en) 2001-07-19 2006-09-12 Samsung Electronics Co., Ltd. Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
WO2003030224A2 (en) 2001-07-25 2003-04-10 Applied Materials, Inc. Barrier formation using novel sputter-deposition method
US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US6548906B2 (en) * 2001-08-22 2003-04-15 Agere Systems Inc. Method for reducing a metal seam in an interconnect structure and a device manufactured thereby
US6806145B2 (en) * 2001-08-31 2004-10-19 Asm International, N.V. Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
US20030042630A1 (en) * 2001-09-05 2003-03-06 Babcoke Jason E. Bubbler for gas delivery
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
WO2003025243A2 (en) * 2001-09-14 2003-03-27 Asm International N.V. Metal nitride deposition by ald using gettering reactant
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US20030049931A1 (en) * 2001-09-19 2003-03-13 Applied Materials, Inc. Formation of refractory metal nitrides using chemisorption techniques
KR20030025494A (ko) 2001-09-21 2003-03-29 삼성전자주식회사 루테늄막과 금속층간의 콘택을 포함하는 반도체 장치 및그의 제조 방법
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US20030057526A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US20030059538A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US6960537B2 (en) * 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US6797108B2 (en) 2001-10-05 2004-09-28 Applied Materials, Inc. Apparatus and method for evenly flowing processing gas onto a semiconductor wafer
TW589684B (en) 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
TW512504B (en) 2001-10-12 2002-12-01 Advanced Semiconductor Eng Package substrate having protruded and recessed side edge
US20030072884A1 (en) * 2001-10-15 2003-04-17 Applied Materials, Inc. Method of titanium and titanium nitride layer deposition
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US7780789B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US20080102203A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US20080102208A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US6902624B2 (en) 2001-10-29 2005-06-07 Genus, Inc. Massively parallel atomic layer deposition/chemical vapor deposition system
US6743681B2 (en) * 2001-11-09 2004-06-01 Micron Technology, Inc. Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride
US6620956B2 (en) * 2001-11-16 2003-09-16 Applied Materials, Inc. Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing
US6423619B1 (en) 2001-11-30 2002-07-23 Motorola, Inc. Transistor metal gate structure that minimizes non-planarity effects and method of formation
US6773507B2 (en) * 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6729824B2 (en) * 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US20030116087A1 (en) * 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US6939801B2 (en) 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
US6560111B1 (en) * 2001-12-28 2003-05-06 Fang Tien Huang Bracket for CPU cooler
US6674138B1 (en) 2001-12-31 2004-01-06 Advanced Micro Devices, Inc. Use of high-k dielectric materials in modified ONO structure for semiconductor devices
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
AU2003238853A1 (en) * 2002-01-25 2003-09-02 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6824816B2 (en) 2002-01-29 2004-11-30 Asm International N.V. Process for producing metal thin films by ALD
US7063981B2 (en) 2002-01-30 2006-06-20 Asm International N.V. Active pulse monitoring in a chemical reactor
US6777352B2 (en) 2002-02-11 2004-08-17 Applied Materials, Inc. Variable flow deposition apparatus and method in semiconductor substrate processing
US6972267B2 (en) * 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6753618B2 (en) 2002-03-11 2004-06-22 Micron Technology, Inc. MIM capacitor with metal nitride electrode materials and method of formation
US20030216981A1 (en) 2002-03-12 2003-11-20 Michael Tillman Method and system for hosting centralized online point-of-sale activities for a plurality of distributed customers and vendors
TW552501B (en) 2002-03-22 2003-09-11 Taiwan Semiconductor Mfg Version recording and tracking method
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6932871B2 (en) 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US20030235961A1 (en) 2002-04-17 2003-12-25 Applied Materials, Inc. Cyclical sequential deposition of multicomponent films
US6778762B1 (en) 2002-04-17 2004-08-17 Novellus Systems, Inc. Sloped chamber top for substrate processing
US6659543B2 (en) 2002-04-18 2003-12-09 9110-3309 Quebec Inc. Convertible bench and table assembly
US20030213560A1 (en) 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
US7164165B2 (en) * 2002-05-16 2007-01-16 Micron Technology, Inc. MIS capacitor
KR100505043B1 (ko) 2002-05-25 2005-07-29 삼성전자주식회사 커패시터 형성 방법
US7404985B2 (en) 2002-06-04 2008-07-29 Applied Materials, Inc. Noble metal layer formation for copper film deposition
US7910165B2 (en) 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7041335B2 (en) 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US7264846B2 (en) 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7183604B2 (en) * 2002-06-10 2007-02-27 Interuniversitair Microelektronica Centrum (Imec Vzw) High dielectric constant device
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
KR100476926B1 (ko) * 2002-07-02 2005-03-17 삼성전자주식회사 반도체 소자의 듀얼 게이트 형성방법
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
WO2004008491A2 (en) 2002-07-15 2004-01-22 Aviza Technology, Inc. Thermal processing system and configurable vertical chamber
US20040013803A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Formation of titanium nitride films using a cyclical deposition process
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7524374B2 (en) 2002-07-17 2009-04-28 Applied Materials, Inc. Method and apparatus for generating a precursor for a semiconductor processing system
US7081409B2 (en) 2002-07-17 2006-07-25 Samsung Electronics Co., Ltd. Methods of producing integrated circuit devices utilizing tantalum amine derivatives
US6955211B2 (en) * 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7066194B2 (en) 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
KR100468852B1 (ko) * 2002-07-20 2005-01-29 삼성전자주식회사 캐패시터 구조체 형성 방법
US6772072B2 (en) * 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US7300038B2 (en) * 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
TWI230544B (en) * 2002-07-25 2005-04-01 Veutron Corp Light source control method and apparatus of image scanner
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
KR100542736B1 (ko) * 2002-08-17 2006-01-11 삼성전자주식회사 원자층 증착법을 이용한 산화막의 형성방법 및 이를이용한 반도체 장치의 캐패시터 형성방법
US7222636B2 (en) 2002-08-20 2007-05-29 Applied Materials, Inc. Electronically actuated valve
US6958300B2 (en) * 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
US6790773B1 (en) 2002-08-28 2004-09-14 Novellus Systems, Inc. Process for forming barrier/seed structures for integrated circuits
JP3925360B2 (ja) * 2002-08-30 2007-06-06 ブリヂストンスポーツ株式会社 ゴルフクラブヘッド
US6875678B2 (en) * 2002-09-10 2005-04-05 Samsung Electronics Co., Ltd. Post thermal treatment methods of forming high dielectric layers in integrated circuit devices
US6784096B2 (en) 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
JP2004111447A (ja) * 2002-09-13 2004-04-08 Handotai Rikougaku Kenkyu Center:Kk 半導体装置及びその製造方法
US6946033B2 (en) 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US6759286B2 (en) * 2002-09-16 2004-07-06 Ajay Kumar Method of fabricating a gate structure of a field effect transistor using a hard mask
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20040065255A1 (en) 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US20040069227A1 (en) 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US6716287B1 (en) 2002-10-18 2004-04-06 Applied Materials Inc. Processing chamber with flow-restricting ring
EP1420080A3 (en) * 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7244683B2 (en) 2003-01-07 2007-07-17 Applied Materials, Inc. Integration of ALD/CVD barriers with porous low k materials
US6994319B2 (en) * 2003-01-29 2006-02-07 Applied Materials, Inc. Membrane gas valve for pulsing a gas
US6868859B2 (en) 2003-01-29 2005-03-22 Applied Materials, Inc. Rotary gas valve for pulsing a gas
US6818094B2 (en) 2003-01-29 2004-11-16 Applied Materials, Inc. Reciprocating gas valve for pulsing a gas
US7442415B2 (en) 2003-04-11 2008-10-28 Sharp Laboratories Of America, Inc. Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US20050070126A1 (en) 2003-04-21 2005-03-31 Yoshihide Senzaki System and method for forming multi-component dielectric films
US6919250B2 (en) * 2003-05-21 2005-07-19 Advanced Micro Devices, Inc. Multiple-gate MOS device and method for making the same
JP5342110B2 (ja) 2003-05-27 2013-11-13 アプライド マテリアルズ インコーポレイテッド 前駆物質を含むソースキャニスタ及びこれを用いて特徴部を充填する方法
US6911093B2 (en) 2003-06-02 2005-06-28 Lsi Logic Corporation Lid liner for chemical vapor deposition chamber
US6881437B2 (en) 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
JP2007523994A (ja) * 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド バリヤ物質の原子層堆積
JP4087323B2 (ja) 2003-09-25 2008-05-21 株式会社東芝 液体タンクおよび燃料電池
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20050104142A1 (en) 2003-11-13 2005-05-19 Vijav Narayanan CVD tantalum compounds for FET get electrodes
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US7067422B2 (en) 2004-03-31 2006-06-27 Tokyo Electron Limited Method of forming a tantalum-containing gate electrode structure
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US20060153995A1 (en) 2004-05-21 2006-07-13 Applied Materials, Inc. Method for fabricating a dielectric stack
US20060062917A1 (en) 2004-05-21 2006-03-23 Shankar Muthukrishnan Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane
US20060019033A1 (en) * 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
WO2006055984A2 (en) 2004-11-22 2006-05-26 Applied Materials, Inc. Substrate processing apparatus using a batch processing chamber
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US7265048B2 (en) 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US7317229B2 (en) * 2005-07-20 2008-01-08 Applied Materials, Inc. Gate electrode structures and methods of manufacture
US20070019371A1 (en) * 2005-07-22 2007-01-25 E-Lead Electronic Co., Ltd. Multimedia display device attached to a sunroof of vehicles
US7464917B2 (en) 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US20070119371A1 (en) * 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
DE102006014996A1 (de) 2006-03-31 2007-10-04 Robert Bosch Gmbh Verfahren zum Betrieb einer Brennkraftmaschine

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